LITE-ON
SEMICONDUCTOR
STPR502D
SUPER FA S T
GLASS PASSIVATED RECT IFIERS
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
REVERSE VO LTAGE FORWARD CURRENT -
TO-220AC
C
K
12
I
PIN 1
PIN 2
B
PIN
H
L
D
E
F
J
N
CASE
M
DIM.
A
G
All Dimensions in millimeter
200
5.0
TO-220AC
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Volts
Amperes
MIN.
14.22 15.88
9.65
2.54
5.84
8.26
-
12.70
4.83
0.51
3.53 4.09
3.56 4.83
1.14 1.40
2.03
MAX.
10.67
3.43
6.86
9.28
6.35
14.73
5.33
1.14
0.64 0.30
2.92
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Non Repetitive Peak Forward
Surge Current Per Diode
Sinusoidal (JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Reverse Recovery Test Conditions:I
3. Thermal Resistance Junction to case.
@T
100 C
C
=
P
T
8.3ms
=
@TJ =25 C
@TJ =125 C
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
F
V
R
I
J
C
RR
T
0JC
R
STG
,T
J
T
F
=0.5A,IR=1.0A,IRR=0.25A.
STPR502D
200
140
200
5
100
0.90
5
500
78
25
4.0
-55 to +150
UNIT
V
V
V
A
A
V
uA
pF
ns
C/W
C
REV . 3, 13-S e p-200 1 , K T G A01
RATING AND CHARA CTERISTIC CURVES
STPR502D
FIG.1 - FORWARD CURRENT DERATING CURVE
5
4
3
2
1
AVERAGE FORWARD CURRENT
RESISTIVE OR INDUCTIVE LOAD
AMPERES
0
0
25
50
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
100
TJ= 125 C
10
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
20
PEAK FORWARD SURGE CURRENT,
AMPERES
125
100
75
50
25
0
1 5 10 50 1002
NUMBE R OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
TJ= 25 C
REVERSE CURRENT ,(uA)
1.0
0.1
TJ= 75 C
TJ= 25 C
INSTANTANEOUS
.01
0
20 40
60 80 100
PERCE NT OF RA TE D PE A K RE VERSE VOLTAGE (%)
180
160
140
120
100
80
CAPACITANCE , (pF)
60
40
1.0
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
120
140
0.1
0.2 0.4
0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
0.6 0..8 1.0
PULSE WIDTH 300us
2% Duty cycle
1.4
1.2
1.6
1.8
TJ= 25 C, f= 1MHz
20
0
0.1
1
10
4
REVERS E VOLTAGE , VO LTS
100
REV. 3, 13-Sep-2001, KTGA01
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