LITEON SBL3030PT, SBL3035PT, SBL3060PT, SBL3040PT, SBL3045PT Datasheet

LITE-ON
SEMICONDUCTOR

SBL3030PT thru 3060PT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification

94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANI CAL DAT A

Case : TO-3P mo l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any

REVERSE VOL TAGE
FORWARD CURRENT

TO-3P

F
E

B

C

M

PIN 2

G

H

J

1

I

PIN 1
PIN 3

A

P

Q

O

PIN

2

L

K

3

D

N

L

CASE

- 30 to 60

- 30

DIM.

A
B
C
D
E

F
G
H

I

J

K
L
M
N
O
P
Q

All Dimensions in millimeter

Volts

Amperes

TO-3P

MIN.

15.75

19.60

1.88 2.08

4.87

4.4TYP.

1.90

2.93 3.22

2.90 3.20

5.20

2.10

0.51

1.93
20 TYP
10 TYP

MAX.

16.25

21.7521.25

20.10

4.38 3.78

5.13

2.16

1.221.12

5.70

2.40

0.76

2.18

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate curr e n t b y 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current
Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Maximum forward
Voltage at 15 . 0A DC

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction Capacitance
per elem ent (Note1)

Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range

@T

@T

@T

C

90 C

=

J

=25 C

J

=100 C

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

F

V

R

I

J

C

R

0JC

J

T

STG

T

SBL
3030PT

30
21
30

SBL
3035PT

35

24.5
35

NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance Junction to Case.

SBL
3040PT

40
28
40

0.55

SBL
3045PT

45

31.5
45

SBL
3050PT

50
35
50

SBL
3060PT

60
42
60

UNIT

30

275

0.70

1

75

700

2.0

mA

pF

C/W

-55 to +125

-55 to +150 C

REV. 2, 01-Dec-2000, KTHD05

V
V
V

A

A

V

C

RATING AND CHARACTERISTIC CURVES
SBL3030PT thru SBL3060PT

FIG.1 - FORWARD CURRENT DERATI NG CURVE

30.0

25.0

20.0

15.0

10.0

5.0

RESISTIVE OR

AVERAGE FORWARD CURRENT

INDUCTIVE LOAD

AMPERES

0

0

20 60 80 100 120

40

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100.0

10.0

1.00

REVERSE CURRENT ,(mA)

TJ= 100 C

TJ= 75 C

140

FIG.2 - MAXIMUM NON-REPETI TIVE SURGE CURRENT

300

250

200

150

100

50

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

PEAK FORWARD SURGE CURRENT,

AMPERES

0

1 5 10 50 1002

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

SBL3030PT~ SBL3045PT

10

10

20

SBL3050PT ~ SBL3060PT

0.10

TJ= 25 C

INSTANTANEOUS

0.01
0

20 40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

10000

1000

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.1

0.2 0.3

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

PULSE WIDTH 300ua

PULSE WIDTH 300us

0.4 0.5 0.6

TJ= 25 C

0.7

0.8

0.9

1.0

100

0.1

1

4

10

100

REVERSE VOLTAGE , VOLTS

REV. 2, 01-Dec-2000, KTHD05