LITEON SBL2030PT, SBL2050PT, SBL2060PT, SBL2040PT, SBL2045PT Datasheet

LITE-ON
SEMICONDUCTOR

SBL2030PT thru 2060PT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification

94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANI CAL DAT A

Case : TO-3P mo l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position :Any

REVERSE VOL TAGE
FORWARD CURRENT

TO-3P

F
E

B

C

M

PIN 2

G

H

J

1

I

PIN 1
PIN 3

A

P

Q

O

PIN

2

L

K

3

D

N

L

CASE

- 30 to 60

- 20

DIM.

A
B
C
D
E

F
G
H

I

J

K
L
M
N
O
P
Q

All Dimensions in millimeter

Volts

Amperes

TO-3P

MIN.

15.75

19.60

1.88 2.08

4.87

4.4TYP.

1.90

2.93 3.22

2.90 3.20

5.20

2.10

0.51

1.93
20 TYP
10 TYP

MAX.

16.25

21.7521.25

20.10

4.38 3.78

5.13

2.16

1.221.12

5.70

2.40

0.76

2.18

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate curr e n t b y 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current
Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Maximum forward
Voltage at 10A DC (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction Capacitance
per elem ent (Note2)

Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range

@T

@T

@T

C

95 C

=

J

=25 C

J

=100 C

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

V

R

I

C

R

0JC

T

STG

T

SBL

2030PT

30
21
30

F

J

J

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0VDC.

3. Thermal Resistance Junction to Case.

SBL

2035PT

35

24.5
35

SBL

2040PT

0.55

40
28
40

SBL

2045PT

45

31.5
45

SBL

2050PT

50
35
50

SBL

2060PT

60
42

60

20

250

0.75

1

50

600

2.5

-55 to +125

-55 to +150 C

REV. 2, 01-Dec-2000, KTHD03

UNIT

V
V
V

A

A

V

mA

pF

C/W

C

RATING AND CHARACTERISTIC CURVES
SBL2030PT thru SBL2060PT

FIG.1 - FORWARD CURRENT DERATING CURVE

20.0

16.0

12.0

8.0

4.0

RESISTIVE OR

AVERAGE FORWARD CURRENT

INDUCTIVE LOAD

AMPERES

0

0

20 60 80 100 120

40

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

1.0

REVERSE CURRENT ,(mA)

TJ= 100 C

TJ= 75 C

140

FIG.2 - MAXIMUM NON-REPETI TIVE SURGE CURRENT

250

200

150

100

50

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

SBL2030PT~ SBL2045PT

10

10

20

SBL2050PT ~ SBL2060PT

TJ= 25 C

0.1

INSTANTANEOUS

0.01
0

20 40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

10000

1000

CAPACITANCE , (pF)

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.1

0.2 0.3

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

PULSE WIDTH 300ua

PULSE WIDTH 300us

0.4 0.5 0.6

TJ= 25 C

0.7

0.8

0.9

1.0

100

0.1

TJ= 25 C, f= 1MHz

REVERSE VOLTAGE , VOLTS

1

4

10

100

REV. 2, 01-Dec-2000, KTHD03