LITEON SBL1630PT, SBL1635PT, SBL1640PT, SBL1645PT, SBL1650PT Datasheet

LITE-ON
SEMICONDUCTOR

SBL1630PT thru 1660PT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification

94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANI CAL DAT A

Case : TO-3P mo l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-3P

F
E

B

C

M

PIN 2

CASE

G

H

J

1

I

PIN 1
PIN 3

A

P

Q

O

PIN

2

L

K

3

D

N

L

- 30 to 60

- 16

DIM.

A
B
C
D
E

F
G
H

I

J

K
L
M
N
O
P
Q

All Dimensions in millimeter

Volts

Amperes

TO-3P

MIN.

15.75

19.60

1.88 2.08

4.87

4.4TYP.

1.90

2.93 3.22

2.90 3.20

5.20

2.10

0.51

1.93
20 TYP
10 TYP

MAX.

16.25

21.7521.25

20.10

4.38 3.78

5.13

2.16

1.221.12

5.70

2.40

0.76

2.18

MAXIMUM RATI NGS AND ELECTRICA L CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load , d erate curre n t by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Vol tage
Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current
Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Maximum forward Voltage
at 8A DC (

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction Capacitance
per elem ent (Note1)

Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range

Note 3)

@T

@T

@T

C

95 C

=

J

=25 C

J

=100 C

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

F

V

R

I

J

C

R

0JC

J

T

STG

T

SBL
1630PT

30
21
30

SBL
1635PT

35

24.5
35

NOTES : 1. Measured at 1. 0MHz and applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to Case.

3. 300us Pulse Width, 2% Duty Cycle.

SBL
1640PT

40
28
40

0.55

SBL
1645PT

45

31.5
45

SBL
1650PT

50
35
50

SBL
1660PT

60
42
60

UNIT

16

250

0.70

0.5
50

500

3.5

mA

pF

C/W

-55 to +125

-55 to +150 C

REV. 2, 01-Dec-2000, KTHD01

V
V
V

A

A

V

C

RATING AND CHARACTERISTIC CURVES
SBL1630PT thru SBL1660PT

FIG.1 - FORWARD CURRENT DERATING CURVE

16.0

12.0

8.0

4.0

RESISTIVE OR

AVERAGE FORWARD CURRENT

INDUCTIVE LOAD

AMPERES

0

0

20 60 80 100 120

40

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

1.0

REVERSE CURRENT ,(mA)

0.1

TJ= 100 C

TJ= 75 C

TJ= 25 C

140

FIG.2 - MAXIMUM NON-REPETI TIVE SURGE CURRENT

250

200

150

100

50

8.3ms Single Half-Sine-Wave

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

(JEDEC METHOD)

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

SBL1630PT~ SBL1645PT

10

10

1.0

1.0

20

SBL1650PT~SBL1660PT

INSTANTANEOUS

0.01
0

20 40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

10000

1000

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

100

0.1

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.1

0.2 0.3

INSTANTANEOUS FORWARD VOLTAGE , VOL TS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1

REVERSE VOLTAGE , VOLTS

10

PULSE WIDTH 300us

PULSE WIDTH 300ua

0.4 0.5 0.6

100

TJ= 25 C

2% duty cycle

0.7

0.8

0.9

1.0

REV. 2, 01-Dec-2000, KTHD01