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LITE-ON
SEMICONDUCTOR
SBG2030CT thru 2045CT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
2
REVERSE VOL TAGE
FORWARD CURRENT
2
D PAK
K
F
J
K
HEATSINK
I
D
C
H
A
K
K
12
G
PIN 1
PIN 2
B
E
- 30 to 45
- 20
DIM.
A
B
C
D
E
F
G
H
I
J
K
All Dimensions in millimeter
Volts
Amperes
2
D PAK
MIN.
9.65 10.69
8.25 9.25
0.51 1.14
2.29
2.29
2.03
1.14
4.37 4.83
MAX.
15.8814.60
1.401.14
2.79
2.79
2.92
1.40
0.640.30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te c urrent by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RM S Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Forward Voltage
at 10A DC (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
@T
105 C
C
=
@TJ =25 C
@TJ =100 C
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Typical Thermal Resistance Junction to Case.
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
F
V
R
I
J
C
R
0JC
J
T
STG
T
SBG2030CT
30
21
30
SBG2035CT
35
24.5
35
SBG2040CT
20
225
0.55
1.0
50
350
2.0
-55 to +125
-55 to +15 0
SBG2045CT
40
28
40
REV. 2, 01-Dec-2000, KTHB08
31.5
45
45
UNIT
V
V
V
A
A
V
mA
pF
C/W
C
C
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RATING AND CHARACTERISTIC CURVES
SBG2030CT thru SBG2045CT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
20
10
AVERAGE FORWARD CURRENT
AMPERES
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
100
10
REVERSE CURRENT ,(mA)
1.0
TJ= 100 C
TJ= 75 C
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
8.3ms Single Half-Sine-Wave
50
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
TJ= 25 C
0.1
0
TJ= 25 C
20 40
60 80 100
INSTANTANEOUS
0.01
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
10000
1000
CAPACITANCE , (pF)
TJ= 25 C, f= 1MHz
100
0.1
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
140
120
0
0.2 0.4
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1
REVERSE VOLTAGE , VOLTS
10
4
0.6 0.8 1.0
100
PULSE WIDTH 300us
2% Duty Cycle
1.4
1.2
1.6
1.8
REV. 2, 01-Dec-2000, KTHB08