LITEON SBG1630CT, SBG1635CT, SBG1640CT, SBG1645CT Datasheet
LITE-ON
SEMICONDUCTOR
SBG1630CT thru 1645CT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
2
REVERSE VOL TAGE
FORWARD CURRENT
2
D PAK
K
F
J
K
HEATSINK
I
D
C
H
A
K
K
12
G
PIN 1
PIN 2
B
E
- 30 to 45
- 16
DIM.
A
B
C
D
E
F
G
H
I
J
K
All Dimensions in millimeter
Volts
Amperes
2
D PAK
MIN.
9.65 10.69
8.25 9.25
0.51 1.14
2.29
2.29
2.03
1.14
4.37 4.83
MAX.
15.8814.60
1.401.14
2.79
2.79
2.92
1.40
0.640.30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te c urrent by 20%
CHARACTERISTICS
Maximum Recurrent Peak Rev erse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Forward Voltage
at 8.0A DC (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
@T
95 C
C
=
@TJ =25 C
@TJ =100 C
SYMBOL
RRM
V
RMS
V
V
(AV)
I
FSM
I
V
C
R
T
STG
T
I
DC
F
R
J
0JC
J
SBG1630CT
30
21
30
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Case.
SBG1635CT
35
24.5
35
SBG1640CT
16
175
0.55
0.5
50
275
3.0
-55 to +125
-55 to +150
SBG1645CT
40
28
40
REV. 2, 01-Dec-2000, KTHB04
45
31.5
45
UNIT
V
V
V
A
A
V
mA
pF
C/W
C
C
RATING AND CHARACTERISTIC CURVES
SBG1630CT thru SBG1645CT
FIG.1 - FORWARD CURRENT DERATING CURVE
24
16
8
AVERAGE FORWARD CURRENT
RESISTIVE OR INDUCTIVE LOAD
AMPERES
0
25
50
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ= 125 C
10
1.0
TJ= 100 C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
200
150
100
50
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FOR WAR D SURGE CURRENT,
175
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCL ES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ= 125 C
10
TJ= 25 C
REVERSE CURRENT ,(mA)
0.1
TJ= 25 C
.01
INSTANTANEOUS
0.001
0
20 40
60 80 100
PERCENT OF RATED VOLTAGE PEAK REVERSEVOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
CAPACITANCE , (pF)
120
140
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
PULSE WIDTH 300us
2% Duty Cycle
0.1
0.1
0.3
0.5 0.7
0.9
1.1
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
10
0.1
TJ= 25 C, f= 1MHz
REVERSE VOLTAGE , VO LTS
1
10
4
100
REV. 2, 01-Dec-2000, KTHB04
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