LITEON SBG1030CT, SBG1035CT, SBG1040CT, SBG1045CT Datasheet

LITE-ON SEMICONDUCTOR
SBG1030CT thru 1045CT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification
94V-0 For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANI CAL DATA
Case : D PAK molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.7 grams
2
REVERSE VOLTAGE FORWARD CURRENT
2
D PAK
K
F
J
K
HEATSINK
I D
C
H
A
K
K
12
G
PIN 1 PIN 2
B
E
- 30 to 45
- 10
DIM.
A B C D E F G H
I J
K
All Dimensions in millimeter
Volts
Amperes
2
D PAK
MIN.
9.65 10.69
8.25 9.25
0.51 1.14
2.29
2.29
2.03
1.14
4.37 4.83
MAX.
15.8814.60
1.401.14
2.79
2.79
2.92
1.40
0.640.30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, der a te current by 20%
RRM RMS
DC
F
R
I
0JC
J
C
J
T
STG
SBG1030CT
30 21 30
CHARACTERISTICS
Maximum Recurren t Peak Reverse Voltage
Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD) Maximum forward Voltage
at 5A DC (Note 1)
Maximum DC Reverse Current at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance per element (Note 3)
Operating Temperature Range
Storage Temperature Range
@T
95 C
C
=
J
=25 C
@T
@TJ =100 C
SYMBOL
V V
V
(AV)
I
FSM
I
V
R
T
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SBG1035CT
35
24.5 35
SBG1040CT
10
125
0.55
0.5 50
3.0
200
-55 to +125
-55 to +150
SBG1045CT
40 28 40
REV. 2, 01-Dec-2000, KTHB02
45
31.5 45
UNIT
V V V
A
A
V
mA
C/W
pF
C C
RATING AND CHARACTERISTIC CURVES SBG1030CT thru SBG1045CT
FIG.1 - FORWARD CURRENT DERATING CURVE
15
10
5
RESISTIVE OR INDUCTIVE LOAD
AVERAGE FORWARD CURRENT
AMPERES
0
25
50
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ= 125 C
10
TJ= 100 C
1.0
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
8.3ms Single Half-Sine-Wave
25
(JEDEC METHOD)
0
PEAK FOR WAR D SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCL ES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ= 125 C
10
TJ= 25 C
REVERSE CURRENT ,(mA)
0.1
TJ= 25 C
.01
INSTANTANEOUS
.001
0
20 40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
1000
100
CAPACI TANCE , (p F)
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
140
120
0.1
0.3
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
0.5 0.7
PULSE WIDTH 300us 2% Duty Cycle
0.9
1.1
10
0.1
TJ= 25 C, f= 1MHz
REVERSE VOLTAGE , VOLTS
1
10
4
100
REV. 2, 01-Dec-2000, KTHB02
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