LITEON SBG1030, SBG1035, SBG1040, SBG1045 Datasheet

LITE-ON SEMICONDUCTOR
SBG1030 thru SBG1045
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification
94V-0 For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : D PAK molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.7 grams
2
REVERSE VOL TAGE FORWARD CURRENT
2
D PAK
K
F
J
K
HEATSINK
I D
C
H
A
K
K
12
G
PIN 1 PIN 2
B
E
- 30 to 45
- 10
DIM.
A B C D E F G H
I J
K
All Dimensions in millimeter
Volts
Amperes
2
D PAK
MIN.
9.65 10.69
8.25 9.25
0.51 1.14
2.29
2.29
2.03
1.14
4.37 4.83
MAX.
15.8814.60
1.401.14
2.79
2.79
2.92
1.40
0.640.30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60HZ, resistive or inductive load. For capacitive load, der a te c urrent by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RM S Voltage Maximum DC Blocking Voltage Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Forward Voltage at 5A DC (Note 1)
Maximum DC Reverse Current at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range
@T
95 C
C
=
@TJ =25 C
@TJ =100 C
SYMBOL UNIT
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
V
I
C
R
0JC
T
STG
T
SBG1030
30 21 30
F
R
J
J
NOTES : 1. 300us Pulse Width, 2% Dut y Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Case.
SBG1035
35
24.5 35
SBG1040
10
250
0.60
1.0 50
280
3.0
-55 to +125
-55 to +150
SBG1045
40 28 40
REV. 2, 01-Dec-2000, KTHB01
31.5
45
45
V V V
A
A
V
mA
pF
C/W
C C
RATING AND CHARACTERISTIC CURVES SBG1030 thru SBG 10 4 5
FIG.1 - FORWARD CURRENT DERATING CURVE
12
8
4
AVERAGE FORWARD CURRENT
AMPERES
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ= 125 C
10
1.0
TJ= 100 C
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
Single Half-Sine-Wave
50
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ= 125 C
10
TJ= 25 C
REVERSE CURRENT ,(mA)
INSTANTANEOUS
0.1
.01
0.001
TJ= 25 C
0
20 40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
CAPACITANCE , (pF)
120
140
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
PULSE WIDTH 300us 2% Duty Cycle
0.1
0.1
0.2 0.3
0.4 0.5 0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
10
0.1
TJ= 25 C, f= 1MHz
REVERSE VOLTAGE , VOLTS
1
10
4
100
REV. 2, 01-Dec-2000, KTHB01
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