LITEON SB1100, SB190, SB170, SB180 Datasheet
LITE-ON
SEMICONDUCTOR
SB170 thru SB1100
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
REVERSE VOL TAGE FORWARD CURRENT -
DO-41
A
Dim.
A
B
C
D
All Dimensions in millimeter
B
D
DO-41
Min.
25.4
4.10
0.71
2.00 2.70
70 to 100
1.0
Ampere
A
Max.
-
5.20
0.86
Volts
C
MAXIMUM RATINGS A ND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, dera te current by 2 0%
100 C
=
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
F
V
R
I
J
C
R
0JL
J
T
STG
T
SB170
70
49
70
SB180
80
56
80
CHARACTERISTICS
Maximum Recurrent Peak Rev erse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Lengths
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum Forward
Voltage at
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
IF=1.0A,TJ=25 C
IF=1.0A,TJ=100 C
@T
L
@TJ=25 C
@TJ=100 C
SB190
90
63
90
1.0
40
0.79
0.69
0.2
2.0
30
50
-55 to +125
-55 to +150 C
REV. 3, 14-Jun-2001, KDHC03
SB1100
100
70
100
UNIT
mA
C/W
V
V
V
A
A
V
pF
C
RATING AND CHARACTERISTIC CURVES
SB170 thru SB1100
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.2
0.375"(9.5mm) LEAD LENGTHS
AVERAGE FORWARD CURRENT
AMPERES
0
25
100
10
50
75 100 125
150
LEAD TEMPERATURE , C
FIG.3 - TYPICAL JUNCTION CAPACITANCE
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
20
10
Pulse width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1
2
510
20
50 100
NUMBER OF CYCLES A T 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
CAPACITANCE , (p F)
TJ= 25 C, f= 1MHz
0
0.1
1104
100
REVERSE VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
0.01
0.4 0.6
0.2
0
0.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
TJ= 25 C
PULSE WIDTH 300us
1.0
12
FIG.5 - TYPI CAL REVERSE CHARACTERIST ICS
10
TJ= 125 C
1.0
TJ= 100 C
0.1
0.01
INSTANTANEOUS REVERSE CURRENT ,(mA)
TJ= 25 C
0.001
06080100
40
20
120
PERCENT OF RATED PEAK REVERSE VOLTAGE , (%)
140
REV. 3, 14-Jun-2001, KDHC03
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