LITEON MURB1620CT, MURB1610CT Datasheet

LITE-ON SEMICONDUCTOR
MURB1610CT thru 1620CT
SUPER FAST
GLASS PASS IVA T ED RECTIFIERS
FEATURES
Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability Low reverse leakage current High surge capacity Plastic package has UL flammability classification 94V-0
MECHANI CAL DAT A
Case : D PAK molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.7 grams
2
REVERSE VOL TAGE FORWARD CURRENT
2
D PAK
K
F
J
K
HEATSINK
I D
C
H
All Dimensions in millimeter
PIN 1 PIN 2
A
K
B
K
1
2
G
E
- 100 to 200
- 16
Amperes
2
D PAK
A B C D E F G H
I
J
K
MIN.
9.65 10.69
14.60
8.25
1.14
0.51 1.14
2.29
2.29
2.03
1.14
4.37 4.83
DIM.
Volts
MAX.
15.88
9.25
1.40
2.79
2.79
2.92
1.40
0.640.30
MAXIMUM RATI NGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load , d erate curre n t b y 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltag e
Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD) Maximum forward Voltage at 8.0A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage
Typical Junction Capacitance per element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@T
125 C
C
=
@TJ =25 C
@TJ =150 C
SYMBOL
RRM
V
V
DC
V
(AV)
I
FSM
I
F
V
R
I
J
C
RR
T
R
0JC
STG
,T
J
T
MURB1610CT
100
70
100
16
100
0.975 5
250
85
25
3.0
-55 to +150
MURB1620CT
200
140
200
UNIT
V V V
A
A
V
uA
pF
ns
C/W
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
F
2.Reverse Recovery Test Conditions:I
=0.5A,IR=1.0A,recovery to 0.25A.
3.Thermal Resistance Junction to Case.
REV. 2, 01-Dec-2000, KTGB01
RATING AND CHARACTERISTIC CURVES MURB1610CT thru MURB1620CT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
12
8
4
RESISTIVE OR INDUCTIVE LOAD
AVERAGE FORWARD CURRENT
AMPERES
0
0
50
25
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
100
10
TJ= 150 C
TJ= 125 C
175
FIG.2 - MAXIMUM NON-REPETI TIVE SURGE CURRENT
150
125
100
75
50
Single Half-Sine-Wave
25
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
TJ= 25 C
TJ= 100 C
TJ= 150 C
10
REVERSE CURRENT ,(mA)
1.0
1.0
TJ= 25 C
0.1
140
INSTANTANEOUS FORWARD CURRENT ,(A)
PULSE WIDTH 300us
0.1
0.4
0.5 0.6
0.7 0.8 0.9
1.0
1.3
1.2
1.1
INSTANTANEOUS FORWARD VOLTAGE , VOL TS
INSTANTANEOUS
0.01 0
20 40
60 80 100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
CAPACITANCE , (pF)
10
TJ= 25 C, f= 1MHz
REVERS E VOLTAGE , VOLTS
1
10
40
100
REV. 2, 01-Dec-2000, KTGB01
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