LITEON MBR870L, MBR880L, MBR890L, MBR8100L Datasheet

LITE-ON

SEMICONDUCTOR

MBR870L thru 8100L

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AC

C

K

12

I

PIN 1
PIN 2

B

PIN

H

L

D

E

F

J

M

A

G

N

CASE

- 70 to 100

- 8.0

Amperes

TO-220AC

DIM.

A
B
C
D
E
F
G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

MIN.

14.22 15.88

9.65

2.54

5.84

8.26

-

12.70

4.83

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67

3.43

6.86

9.28

6.35

14.73

5.33

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

MBR880L

80

56

80

DC

R

F

J

J

MBR870L

70
49
70

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

=125 C (See Fig.1)

at T

C

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range

F

=8A @

I

F

=8A @

I

TJ =25 C

TJ =125 C

@TJ =25 C

@TJ =125 C

SYMBOL

RRM

V

RMS

V

V

(AV)

I

FSM

I

dv/dt

V

I

C

R

0JC

T

STG

T

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied revers e voltage of 4.0V DC.

3. Thermal Resistance Junction to Case.

MBR890L

8

230

10000

0.72

0.58

0.55
7

280

2.0

-55 to +150

-55 to +175

MBR8100L

90
63
90

REV . 3, 13-S e p-2001 , K THA06

100

70

100

UNIT

V
V
V

A

A

V/us

V

mA

pF

C/W

C
C

RATING AND CHARACTERISTIC CURVES
MBR870L thru MBR8100L

FIG.1 - FORWARD CURRENT DERATING CURVE

10

8

6

4

2

AVERAGE FORWARD CURRENT

AMPERES

RESISTIVE OR INDUCTIVE LOAD

0

0

25

50

75 100 125 150

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

1000

100

10

REVERSE CURRENT ,(mA)

INSTANTANEOUS

TJ= 125 C

1.0

TJ= 75 C

0.1

0

TJ= 25 C

20 40

60 80 100

0.01

PERCENT OF RA TED PEAK REVERSE VOLTAGE ,(%)

120

140

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

300

250

200

150

100

50

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURG E CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

10

10

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

0.1

0.2 0.3

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

0.4 0.5 0.6

TJ= 25 C

PULSE WIDTH 300ua

PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

10000

1000

CAPACITANCE , (pF)

100

FIG.5 - TYPICAL JUNCTION CAPACITANCE

TJ= 25 C, f= 1MHz

0.1

1

4

REVERS E VOLTAGE , VO LTS

10

100

REV. 3, 13 -S ep -20 0 1, KT HA06