LITEON MBR870, MBR890, MBR8100, MBR880 Datasheet

LITE-ON

SEMICONDUCTOR

MBR870 thru MBR8100

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient pro tec tio n
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AC

C

K

12

I

PIN 1
PIN 2

B

PIN

H

L

D

E

F

J

M

A

G

N

CASE

- 70 to 100

- 8.0

Amperes

TO-220AC

DIM.

A
B
C
D
E
F

G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

MIN.

14.22 15.88

9.65

2.54

5.84

8.26

-

12.70

4.83

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67

3.43

6.86

9.28

6.35

14.73

5.33

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current (See Fig.1)

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR )

F

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)

Operating Temperature Range
Storage Temperature Range

I

F

I

F

I

F

I

=8A @
=8A @
=16A @
=16A @

@T

110 C

C

=

TJ =25 C
TJ =125 C

TJ =25 C
TJ =125 C

@TJ =25 C

@TJ =125 C

NOTES : 1. 300us Pulse Width, Duty Cycle 2%

2. Thermal Resistance Junction to Case.

3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

F

V

R

I

R

0JC

J

C

J

T

STG

T

MBR870 MBR880

MBR870

MBR870MBR870

70
49
70

80
56
80

8

125

10000

0.85

0.75

0.95

0.85

0.1

100

2.0

280

-55 to +150

-55 to +175

MBR890

90

MBR8100

100
63
90

REV . 3, 13-S e p-2001 , K T H A09

100

70

UNIT

V
V
V

A

A

V/us

V

mA

C/W

pF

C
C

RATING AND CHARA CTERISTIC CURVES
MBR870 thru MBR8100

FIG.1 - FORWARD CURRENT DERATING CURVE

10

8

6

4

2

AVERAGE FORWARD CURRENT

AMPERES

RESISTIVE OR INDUCTIVE LOAD

0

0

25

50

75 100 125 150

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

1

TJ= 125 C

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

125

100

75

50

25

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBE R OF CYCLES A T 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

10

10

REVERSE CURRENT ,(mA)

0.1

0.01

INSTANTANEOUS

0.001
0

TJ= 25 C

20 40

60 80 100

PERCENT OF RA TED PEAK REVERSE VOLTAGE ,(%)

10000

1000

CAPACITANCE , (pF)

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.2 0.3

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

PULSE WIDTH 300ua

PULSE WIDTH 300us
2% Duty cycle

0.4 0.5 0.6

TJ= 25 C

0.7

0.8

0.9

1.0

TJ= 25 C, f= 1MHz

100

0.1

1

10

4

REVERS E VOLTAGE , VO LTS

100

REV. 3, 13 -S ep -20 0 1, KT HA09