LITEON MBR860, MBR845, MBR850, MBR830, MBR840 Datasheet

LITE-ON

SEMICONDUCTOR

MBR830 thru MBR860

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient pro tec tion
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AC

C

K

12

I

B

PIN

H

L

D

E

F

J

M

A

G

N

R

PIN 1
PIN 2

CASE

- 30 to 60

- 8.0

DIM.

A
B
C
D
E
F
G
H

I

Y

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AC

MIN.

14.22 15.88

9.65

2.54

5.84

8.26

-

12.70

4.83

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67

3.43

6.86

9.28

6.35

14.73

5.33

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

NA

I

M

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage

Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current

=125 C (See Fig.1)

at T

C

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range

Storage Temperature Range

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Thermal Resistance Junction to Case.

R

F

I

=8A @
=8A @
=16A @

TJ =125 C
TJ =25 C

@TJ =125 C

P

F

I

F

I

TJ =25 C

@TJ =25 C

SYMBOL

V
V

E

dv/dt

R

T

MBR830

I

RRM
RMS

L

DC

V

(AV)

I

FSM

I

F

V

R

I

J

C

0JC

J

T

STG

30
21
30

MBR835

35

24.5
35

MBR840

0.57

0.70

0.84

40
28
40

8

150

10000

0.1
15

250

3.0

-55 to +150

-55 to +175

MBR845

45

31.5
45

MBR850

50

35

50

REV. 2-PRE, 13-Sep-2001, KTHA05

MBR860

0.70

0.80

0.95

42

60

60

UNIT

V
V
V

A

A

V/us

V
V

mA
mA

pF

C/W

C
C

RATING AND CHARA CTERISTIC CURVES
MBR830 thru MBR860

FIG.1 - FORWARD CURRENT DERATING CURVE

10

8

6

4

RESISTIVE OR

2

AVERAGE FORWARD CURRENT

REVERSE CURRENT ,(mA)

INDUCTIVE LO AD

AMPERES

0

0

25

100

10

1.0

0.1

50

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

75 100 125 150

CASE TEMPERATURE , C

TJ= 125 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

125

100

75

50

25

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBE R OF CYCLES A T 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

20

Y

R

MBR830 ~ MBR845

10

10

A

MBR850 ~ MBR860

N

I

1.0

1.0

0.01

INSTANTANEOUS

0.001
0

PERCENT OF RA TED PEAK REVERSE VOLTAGE ,(%)

TJ= 25 C

20 40

60 80 100

1000

R

P

100

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

10

0.1

M

INSTANTANEOUS FORWARD CURRENT ,(A)

I

140

120

L

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

0.1

0.2 0.4

0

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

E

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1

REVERS E VOLTAGE , VO LTS

10

4

0.6 0.8 1.0

100

TJ= 25 C

PULSE WIDTH 300us
2% Duty cycle

1.4

1.2

1.6

1.8

REV. 2-PRE, 13-Sep-2001, KTHA05