LITEON MBR745, MBR730, MBR735, MBR760, MBR750 Datasheet

LITE-ON

SEMICONDUCTOR

MBR730 thru MBR760

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANI CAL DATA

Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AC

C

K

12

I

PIN 1
PIN 2

B

PIN

H

L

D

E

F

J

M

A

G

N

CASE

- 30 to 60

- 7.5

DIM.

A
B
C
D
E
F

G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AC

MIN.

14.22 15.88

9.65

2.54

5.84

8.26

-

12.70

4.83

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67

3.43

6.86

9.28

6.35

14.73

5.33

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current (See Fig.1)

Peak Forward Surge Current

8.3ms single half si ne-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR )

F

I

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Current

at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capa c it ance (Not e 3)

Operating Temperature Range

Storage Temperature Range

=7.5A @

F

=7.5A @

I

F

=15A @

I

F

=15A @

I

@T

125 C

C

=

TJ =25 C
TJ =125 C

TJ =25 C
TJ =125 C

@TJ =25 C

@TJ =125 C

SYMBOL

V
V

dv/dt

R

T

NOTES : 1. 300us Pulse Width, Duty Cycle 2%

2. Thermal Resistance Junction to Case.

3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

V

(AV)

I

FSM

I

V

RRM
RMS

DC

F

R

I

0JC

J

C

J

T

STG

MBR730

30
21
30

MBR735

35

24.5
35

MBR740

-

0.57

0.84

0.72

0.1
15

40
28
40

7.5

150

10000

3.5

400

-55 to +150

-55 to +175

MBR745

45

31.5
45

MBR750

50
35
50

MBR760

60
42
60

UNIT

V
V
V

A

A

V/us

0.75

0.65

-

V

-

0.5
50

mA

C/W

pF

C
C

REV. 3, 13-Sep-2001, KTHA02

RATING AND CHARACTERISTIC CURVES
MBR730 thru MBR 7 60

FIG.1 - FORWARD CURRENT DERATING CURVE

10

8

6

4

RESISTIVE OR

2

AMPERES

0

0

25

INDUCTIVE LOAD

50

75 100 125 150

AVERAGE FORWARD CURRENT

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

TJ= 125 C

1.0

REVERSE CURRENT ,(mA)

0.1

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

100

50

8.3ms Single Half-Sin e-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

10

1.0

1.0

10

MBR730 ~ MBR745

20

MBR750 ~ MBR760

0.01

0

TJ= 25 C

20 40

60 80 100

INSTANTANEOUS

0.001

PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)

10000

1000

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

100

0.1

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.2 0.3

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1

REVERSE VOLTAGE , VOLTS

10

4

0.4 0.5 0.6

100

TJ= 25 C

PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

REV. 3, 13-Sep-2001, KTHA02