LITEON MBR6030PT, MBR6045PT, MBR6035PT, MBR6040PT Datasheet

LITE-ON
SEMICONDUCTOR

MBR6030PT thru 6045PT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification

94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANI CAL DAT A

Case : TO-3P mo l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any

REVERSE VOL TAGE
FORWARD CURRENT

TO-3P

F
E

B

C

M

PIN 2

CASE

G

H

J

1

I

PIN 1
PIN 3

A

P

Q

O

PIN

2

L

K

3

D

N

L

- 30 to 45

- 60

DIM.

A
B
C
D
E

F
G
H

I

J

K
L
M
N
O
P
Q

All Dimensions in millimeter

Volts

Amperes

TO-3P

MIN.

15.75

19.60

1.88 2.08

4.87

4.4TYP. 4.4TYP.

1.90

2.93 3.22

2.90 3.20

5.20

2.10

0.51

1.93
20 TYP
10 TYP

MAX.

16.25

21.7521.25

20.10

4.38 3.78

5.13

2.16

1.221.12

5.70

2.40

0.76

2.18

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate curr e n t b y 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage

Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)

Peak Forward Surge Current

8.3ms single half sine -wave
superimposed on rated load (JEDEC METHOD)

F

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 2)
Typical Junction Capacitance

per elem ent
Operating Temperature Range

Storage Temperature Range

(Note 3)

I

F

I

F

I

=30A @
=30A @
=60A @

@T

125 C

C

=

TJ =25 C

TJ =125 C

J

=25 C

T

@TJ =25 C

@TJ =100 C

NOTES : 1. 300us Pulse Width duty cycle 2%.

2. Thermal Resistance Junction to Case.

3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

F

V

R

I

R

0JC

J

C

J

T

STG

T

MBR6030PT

30
21
30

MBR6035PT

35

24.5
35

MBR6040PT

60

500

0.62

0.55

0.75

1.0
50

1.0

700

-55 to +150

-55 to +175

MBR6045PT

40
28
40

REV. 2, 01-Dec-2000, KTHD14

45

31.5
45

UNIT

V
V
V

A

A

V

mA

C/W

pF

C
C

RATING AND CHARACTERISTIC CURVES
MBR6030PT thru MBR6045PT

FIG.1 - FORWARD CURRENT DERATING CURVE

80

60

40

20

RESISTIVE OR

AVERAGE FORWARD CU RRENT

INDUCTIVE LOAD

AMPERES

0

0

25 75 100 125 150

50

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

1.0

REVERSE CURRENT ,(mA)

TJ= 100 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

500

400

300

200

150

8.3ms Single Half-Sine- Wave

100

(JEDEC METHOD)

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

TJ= 125 C

10

10

20

TJ= 25 C

1.0

1.0

0.1

INSTANTANEOUS

0.01
0

TJ= 25 C

20 40

60 80 100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE, %

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

0.1

0.2 0.3

0.1

0.4 0.5 0.6

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

TJ= 25 C

PULSE WIDTH 300ua

PULSE WIDTH 300us

0.8

0.7

0.9

1.0

FIG.5 - TYPICAL JUNCTION CAPACITANCE

10000

1000

CAPACITANCE , (pF)

100

TJ= 25 C, f= 1MHz

0.1

1

10

4

REVERSE VOLTAGE , VOLTS

100

REV. 2, 01-Dec-2000, KTHD14