LITEON MBR4045PT, MBR4040PT, MBR4050PT, MBR4035PT, MBR4030PT Datasheet
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LITE-ON
SEMICONDUCTOR
MBR4030PT thru 4060PT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANI CAL DAT A
Case : TO-3P mo l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
REVERSE VOL TAGE
FORWARD CURRENT
TO-3P
F
E
B
C
M
PIN 2
CASE
G
H
J
1
I
PIN 1
PIN 3
A
P
Q
O
PIN
2
L
K
3
D
N
L
- 30 to 60
- 40
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
All Dimensions in millimeter
Volts
Amperes
TO-3P
MIN.
15.75 16.25
19.60
1.88 2.08
4.87
4.4TYP. 4.4TYP.
1.90 2.16
2.93 3.22
2.90 3.20
5.20
2.10
0.51
1.93
20 TYP
10 TYP
MAX.
21.7521.25
20.10
4.38 3.78
5.13
1.221.12
5.70
2.40
0.76
2.18
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate curr e n t b y 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine -wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
F
Maximum Forward
Voltage (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Temperature Range
Storage Temperature Range
I
F
I
F
I
F
I
=20A @
=20A @
=40A @
=40A @
@T
125 C
C
=
TJ =25 C
TJ =125 C
J
=25 C
T
TJ =125 C
@TJ =25 C
@TJ =125 C
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
dv/dt
V
R
I
R
0JC
C
T
STG
T
MBR
4030PT
F
J
J
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
30
21
30
MBR
4035PT
35
24.5
35
4040PT
0.70
0.60
0.80
0.75
MBR
40
28
40
40
400
10000
1.0
100
1.4
700
-55 to +150
-55 to +175
MBR
4045PT
45
31.5
45
MBR
4050PT
50
35
50
MBR
4060PT
60
42
60
UNIT
V/us
0.80
0.70
-
-
C/W
REV. 2, 01-Dec-2000, KTH11
V
V
V
A
A
V
mA
pF
C
C
RATING AND CHARACTERISTIC CURVES
MBR4030PT thru MBR4060PT
FIG.1 - FORWARD CURRENT DERATING CURVE
40
30
20
10
RESISTIVE OR
AVERAGE FORWARD CU RRENT
INDUCTIVE LOAD
AMPERES
0
0
25 75 100 125 150
50
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
10
TJ= 125 C
1.0
0.1
REVERSE CURRENT ,(mA)
0.01
INSTANTANEOUS
0.001
0
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
TJ= 75 C
TJ= 25 C
20 40
60 80 100
120
175
140
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
400
300
200
100
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
MBR4030PT~ MBR4045PT
1.0
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
0.1
0.2 0.3
0.1
0
0.4 0.5 0.6
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
20
MBR4050PT ~ MBR4060PT
TJ= 25 C
PULSE WIDTH 300ua
PULSE WIDTH 300us
0.7
0.8
0.9
10000
1000
CAPACITANCE , (p F)
100
0.1
FIG.5 - TYPICAL JUNCTION CAPACITANCE
TJ= 25 C, f= 1MHz
1
REVERSE VOLTAGE , VOLTS
10
4
100
REV. 2, 01-Dec-2000, KTH11
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