LITEON MBR3040PT, MBR3060PT, MBR3050PT, MBR3030PT, MBR3035PT Datasheet

LITE-ON
SEMICONDUCTOR

MBR3030PT thru 3060PT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification

94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANI CAL DAT A

Case : TO-3P mo l ded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any

REVERSE VOL TAGE
FORWARD CURRENT

TO-3P

F
E

B

C

M

PIN 2

CASE

G

H

J

1

I

PIN 1
PIN 3

A

P

Q

O

PIN

2

L

K

3

D

N

L

- 30 to 60

- 30

DIM.

A
B
C
D
E
F
G

H

I
J
K

L

M

N

O

P
Q

All Dimensions in millimeter

Volts

Amperes

TO-3P

MIN.

15.75

19.60

1.88 2.08

4.87

4.4TYP. 4.4TYP.

1.90

2.93 3.22

2.90 3.20

5.20

2.10

0.51

1.93
20 TYP
10 TYP

MAX.

16.25

21.7521.25

20.10

4.38 3.78

5.13

2.16

1.221.12

5.70

2.40

0.76

2.18

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate curr e n t b y 20%

MBR

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

V

I

R

0JC

C
T

STG

T

F

R

J
J

3030PT

30
21
30

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage

Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)

Peak Forward Surge Current

8.3ms single half sine -wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)

F

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Temperature Range

Storage Temperature Range

I

F

I

F

I

F

I

=20A @
=20A @
=30A @
=30A @

@T

125 C

C

=

J

=25 C

T
TJ =125 C
TJ =25 C
TJ =125 C

@TJ =25 C

@TJ =125 C

SYMBOL

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Thermal Resistance Junction to Case.

3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

MBR

3035PT

35

24.5
35

3040PT

-

0.60

0.76

0.72
1

60

MBR

40
28
40

30

200

10000

1.4

500

-55 to +150

-55 to +175

MBR

3045PT

45

31.5
45

MBR

3050PT

50
35
50

MBR

3060PT

60
42
60

UNIT

V
V
V

A

A

V/us

0.75

0.65

V

0.80

0.75
5

100

mA

C/W

pF

C
C

REV. 2, 01-Dec-2000, KTHD09

RATING AND CHARACTERISTIC CURVES
MBR3030PT thru MBR3060PT

FIG.1 - FORWARD CURRENT DERATING CURVE

40

30

20

10

RESISTIVE OR

AVERAGE FORWARD CURRENT

INDUCTIVE LOAD

AMPERES

0

0

25 75 100 125 150

50

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

TJ= 125 C

10

1.0

REVERSE CURRENT ,(mA)

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

200

150

100

50

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

PEAK FOR WAR D SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBER OF CYCLES A T 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

10

10

MBR3030PT~ MBR3045PT MBR3050PT ~ MBR3060PT

20

0.1

INSTANTANEOUS

0.01
0

TJ= 25 C

20 40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)

10000

1000

CAPACITANCE , (pF)

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.2 0.3

0.1

0

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

TJ= 25 C

PULSE WIDTH 300ua

PULSE WIDTH 300us

0.4 0.5 0.6

0.7

0.8

0.9

100

TJ= 25 C, f= 1MHz

0.1

1

10

4

REVERSE VOLTAGE , VOLTS

100

REV. 2, 01-Dec-2000, KTHD09