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LITE-ON
SEMICONDUCTOR
MBR2530CT thru 2560CT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : any
REVERSE VOLTAGE
FORWARD CURRENT
TO-220AB
C
K
I
PIN 1
PIN 3
132
H
B
PIN
H
L
D
E
F
J
M
A
G
N
PIN 2
R
CASE
- 30 to 60
- 30
DIM.
A
B
C
D
E
F
G
H
I
J
K
Y
L
M
N
All Dimensions in millimeter
Volts
Amperes
TO-220AB
MIN.
14.22 15.88
9.65
2.54
5.84
8.26
-
12.70
2.29
0.51
3.53 4.09
3.56 4.83
1.14 1.40
2.03
MAX.
10.67
3.43
6.86
9.28
6.35
14.73
2.79
1.14
0.64 0.30
2.92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum forward
Voltage (per leg)
at (Note 1)
Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage
Voltage rate of change (Rated VR)
Typical Junction Capacitance
per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
IF = 15 A,
IF = 15A,
IF = 30 A,
IF = 30A,
P
@TC=130 C
@TJ=25 C
RE
J
@T
=125 C
@TJ=25 C
J
@T
=125 C
@TJ=25 C
@TJ=125 C
SYMBOL
RRM
V
RMS
V
V
L
(AV)
I
FSM
I
V
I
dv/dt
C
R
T
STG
T
2530CT
M
I
DC
F
R
J
0JC
J
MBR
30
21
30
N
I
MBR
2535CT
35
24.5
35
-
-
0.82
0.73
0.2
40.0
MBR
2540CT
A
MBR
2545CT
40
28
40
-55 to +150
-55 to +175 C
45
31.5
45
30
150
10,000
450
1.5
MBR
2550CT
50
35
50
0.65
0.75
50.0
REV. 2-PRE, 13-Sep-2001, KTHC15
MBR
2560CT
60
42
60
-
-
1.0
UNIT
V
V
V
A
A
V
mA
V/us
pF
C/W
C
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RATING AND CHARACTERISTIC CURVES
MBR 2530CT thru MBR256 0CT
FIG.1 - FORWARD CURRENT DERATING CURVE
40
30
20
10
RESISTIVE OR
AVERAG E F O RWARD CURRENT
100.0
REVERSE CURRENT ,(mA)
INDUCTIVE LO AD
AMPERES
0
0
25 75 100 125 150
10.0
1.0
0.1
50
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
TJ= 125 C
TJ= 75 C
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half -Sine-Wave
(JEDEC METHOD)
0
PEAK F O R WARD SURGE CURREN T,
AMPERES
1 5 10 50 1002
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTER I STICS
100
10
1.0
TJ= 150 C
20
Y
TJ= 25 C
AR
0.01
INSTANTANEOUS
0.001
20 40
0
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
TJ= 25 C
60 80 100
10000
E
R
1000
P
CAPACI TANCE , (pF)
100
0.1
0.1
N
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD CURRENT ,(A)
MBR2530CT - MBR2545CT
MBR2550CT &- MBR2560CT
120
M
140
I
0.01
0.1 0.2
0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
I
FIG.5 - TYPICAL JUNCTION CAPACITANCE
L
TJ= 25 C, f= 1MHz
MBR2530CT - MBR2545CT
MBR2550CT - MBR2560CT
1
REVERS E VOLTAGE , VO LTS
10
4
0.3 0.4 0.5
100
MBR2530CT - MBR2545CT
MBR2550CT &- MBR2560CT
PULSE WIDTH 300us
2% Duty cycle
0.8
0.7
0.6
0.9
REV. 2-PRE, 13-Sep-2001, KTHC15