LITE-ON
SEMICONDUCTOR
MBR2070CT thru 20100CT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
REVERSE VOLTAGE
FORWARD CURRENT
TO-220AB
C
K
I
PIN 1
PIN 3
132
H
B
PIN
H
L
M
D
A
E
F
G
J
N
PIN 2
CASE
- 70 to 100
- 20
Amperes
TO-220AB
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
All Dimensions in millimeter
Volts
MIN.
14.22 15.88
2.54 3.43
8.26
-
12.70
2.29
0.51
3.53 4.09
3.56 4.83
1.14 1.40
2.03
MAX.
10.67 9.65
6.86 5.84
9.28
6.35
14.73
2.79
1.14
0.64 0.30
2.92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
RRM
RMS
DC
(AV)
FSM
V
R
I
0JC
C
T
STG
F
J
J
MBR2070CT
70
49
70
MBR2080CT
80
56
80
=25 C
SYMBOL
V
V
V
I
I
dv/dt
R
T
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
IF=10A @
Maximum Forward
Voltage (Note 1)
Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance
per element (Note 3)
Operating Temperature Range
Storage Temperature Range
=10A @
I
F
I
=20A @
F
=20A @
I
F
T
C
@T
@T
=120 C
T
=125 C
J
=25 C
T
J
T
=125 C
J
=25 C
T
J
J
J
=125 C
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
MBR2090CT
20
150
10000
0.75
0.85
0.85
0.95
0.1
100
2.0
250
-55 to +150
-55 to +175
MBR20100CT
90
63
90
REV . 4, 13-S e p-2001 , K THC09
100
70
100
UNIT
V
V
V
A
A
V/us
V
mA
C/W
pF
C
C
RATING AND CHARACTERISTIC CURVES
MBR 2070CT thru MBR201 00CT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
15
10
5
AVERAGE FORWARD CURRENT
AMPERES
0
0
RESISTIVE OR INDUCTIVE LOAD
25
50
75 100 125 150
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
TJ= 100 C
TJ= 75 C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
175
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
REVERSE CURRENT ,(mA)
INSTANTANEOUS
0.001
0.1
0.01
TJ= 25 C
0
20 40
60 80 100
RATED PEAK REVERS E VOLTAGE (%)
1000
100
CAPACITANCE , (pF)
1.0
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
120
140
0.1
0.3
0.2
0.1
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
PULSE WIDTH 300us
2% Duty cycle
0.4 0.5 0.6
TJ= 25 C
0.7
0.8
0.9
1.0
TJ= 25 C, f= 1MHz
10
0.1
1
10
4
REVERSE VOLTAGE , VOLTS
100
REV. 4, 13-Sep-2001, KTHC09
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