LITEON MBR2030CT, MBR2060CT, MBR2050CT, MBR2035CT, MBR2045CT Datasheet

LITE-ON
SEMICONDUCTOR

MBR2030CT thru 2060CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AB

C

K

I

PIN 1
PIN 3

132

H

B

PIN

H

L

D

E

F

J

M

A

G

N

PIN 2

CASE

- 30 to 60

- 20

DIM.

A
B
C
D
E
F
G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AB

MIN. MAX.

14.22 15.88

2.54 3.43

8.26

-

12.70

2.29

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

10.67 9.65

6.86 5.84

9.28

6.35

14.73

2.79

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

V

R

I
C

R

0JC

T

STG

T

MBR
2030CT

30
21
30

F

J

J

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage

Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)

Maximum Forward
Voltage (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction Capacitance
per element (Note 2)

Typical Thermal Resistance (Note 3)
Operating Temperature Range

Storage Temperature Range

IF=10A @

F

=10A @

I

F

=20A @

I

F

=20A @

I

T

C

@T

@T

=125 C

J

T

=25 C

J

T

=125 C

J

=25 C

T

J

T

=125 C

J

J

=100 C

=25 C

SYMBOL

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Thermal Resistance Junction to Case.

MBR
2035CT

35

24.5
35

MBR
2040CT

40
28
40

-

0.57

0.84

0.72

300

MBR
2045CT

45

31.5
45

20

150

10000

0.1
15

2.0

-55 to +150

-55 to +175

MBR
2050CT

50
35
50

MBR
2060CT

60
42
60

UNIT

V
V
V

A

A

V/us

0.80

0.70

0.95

V

0.85

mA

400

pF

C/W

C
C

REV . 3, 13-S e p-2001 , K THC08

RATING AND CHARACTERISTIC CURVES
MBR 2030CT thru MBR206 0CT

FIG.1 - FORWARD CURRENT DERATING CURVE

20

15

10

5

RESISTIVE OR

AMPERES

0

0

25

INDUCTIVE LOAD

50

75 100 125 150

AVERAGE FORWARD CURRENT

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

1000

100

10

TJ= 100 C

175

FIG.2 - MAXIMUM NON-REPET ITIVE SURGE CURRENT

150

125

100

75

50

25

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT ,

AMPERES

1 5 10 50 1002

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

10

10

MBR2030CT ~ MBR20 4 5CT

20

REVERSE CURRENT ,(mA)

1.0

TJ= 75 C

0.1

20 40

TJ= 25 C

60 80 100

INSTANTANEOUS

0.01
0

PERCENT OF RATED PEAK REVERSE VOL TAGE (%)

10000

1000

CAPACITANCE , (pF)

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.3

0.2

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

TJ= 25 C, f= 1MHz

MBR2030CT ~ MBR2045CT

MBR2050CT ~ MBR2060CT

0.4 0.5 0.6

TJ= 25 C

PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

100

MBR2050CT ~ MBR20 60CT

0.1

1

10

4

100

REVERSE VOLTAGE , VOLTS

REV. 3, 13-Sep-2001, KTHC08