LITEON LTV 358T-SMD Datasheet

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

FEATURES

* Current transfer ratio

( CTR : MIN. 80% at IF = 5mA, VCE = 5V )

* Isolation voltage between input and output LTV-358T

( Viso = 3,750Vrms )

* High collector-emitter voltage

( VCEO = 120V )
* Employs double transfer mold technology
* Subminiature type

( The volume is smaller than that of conventional DIP type by as far as 30% )
* Mini-flat package :

2.0mm profile : LTV-358T
* UL approved ( No. E113898 )
* CUL approved ( No. E113898 , 01SC19287 )
* CSA approved ( No. 1243207 )
* FIMKO approved ( No. FI-16420 )
* NEMKO approved ( No. P01100403 )
* DEMKO approved ( No. 310475-01 )
* SEMKO approved ( No. 0109173 / 01-08 )
* VDE approved ( No. 094722 )
* RoHS compliance

APPLICATIONS

* Hybrid substrates that require high density mounting.
* Programmable controllers

Part No. : LTV-358T Page : 1 of 9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

2 of

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV-358T :

2.54±0.25

Date Code *1

4.40±0.2

Pin No. and Internal
connection diagram

4 3

Factory Code *2.

2.00±0.20.10±0.1

Rank *3

3.85±0.3

0.40±0.1

1 2

1. Anode

2. Cathode

5.30±0.3

7.00

3. Emitter

4. Collector

+0.2

-0.7

0.2±0.05

*1. 2-digit date code.
*2. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
*3. Rank shall be or shall not be marked.

Part No. :

LTV-358T

Page :

9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

TAPING DIMENSIONS

Tape wide W
Pitch of sprocket holes P0

Distance of compartment
Distance of compartment to compartment P1

Description Symbol Dimensions in mm ( inches )

12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )

F

P2

5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )

8 ± 0.1 ( .315 )

Part No. : LTV-358T Page : 3 of 9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

4 of

Property of LITE-ON Only

ABSOLUTE MAXIMUM RATING

PARAMETER

Forward Current IF 50 mA

INPUT

OUTPUT

Total Power Dissipation Ptot 170 mW

*1 Isolation Voltage Viso 3,750 Vrms

Operating Temperature Topr -55 ~ +100

Storage Temperature Tstg -55 ~ +150

Reverse Voltage VR 6 V

Power Dissipation P 70 mW

Collector - Emitter Voltage VCEO 120 V

Emitter - Collector Voltage VECO 6 V

Collector Current IC 50 mA

Collector Power Dissipation PC 150 mW

SYMBOL

RATING UNIT

( Ta = 25°C )

°C
°C

*2 Soldering Temperature Tsol 260

*1. AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and

emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.

*2. For 10 Seconds

Part No. :

LTV-358T

Page :

°C

9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Emitter

=0.1mA

A

Emitter

=20mA

I

5 of

Property of LITE-ON Only

ELECTRICAL - OPTICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

INPUT

OUTPUT

Forward Voltage VF — 1.2 1.4 V IF=20mA

Reverse Current IR — — 10

Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz

Collector Dark Current ICEO — — 100 nA VCE=40V, IF=0

Collector­Breakdown Voltage

Emitter-Collector
Breakdown Voltage

Collector Current IC 4 — 20 mA

*1

Current Transfer Ratio CTR 80 — 400 %

Collector Current IC 0.2 — — mA

*1

Current Transfer Ratio CTR 20 — — %

BVCEO 120 — — V

BVECO 6 — — V

µA

( Ta = 25°C )

VR=4V

IC
IF=0

IE=10µ
IF=0

IF=5mA
VCE=5V

IF=1mA
VCE=5V

TRANSFER

CHARACTERISTICS

CTR

*1

Part No. :

LTV-358T

C

= ×

I

F

Collector­Saturation Voltage

Isolation Resistance Riso

Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz

Response Time (Rise) tr — 4 18

Response Time (Fall) tf — 3 18

100%

VCE(sat) — — 0.2 V

5×10

10

1×10

11

—

IF
IC=1mA

DC500V

Ω

40 ~ 60% R.H.

µs

VCE=2V, IC=2mA
RL=100Ω

µs

Page :

9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

6 of

Property of LITE-ON Only

RANK TABLE OF CURRENT TRANSFER RATIO CTR

MODEL NO. RANK MARK CTR ( % ) CTR ( % )

A 80 ~ 160 >20
B 130 ~ 260 >45

LTV-358T

C 200 ~ 400 >70

A or B or C or No Rank

80 ~ 400 >20

IF = 5 mA

CONDITIONS

VCE = 5 V

Ta = 25 °C

IF = 1 mA

VCE = 5 V

Ta = 25 °C

Part No. :

BNS-OD-C131/A4

LTV-358T

Page :

9

LITE-ON TECHNOLOGY CORPORATION

7 of

Property of LITE-ON Only

CHARACTERISTICS CURVES

Fig.1 Forword Current Fig.2 Collector Power Dissiption

vs. Ambient Temperatute

60

50

)
A

m

(

40

F

I

t

n

e

r

r

30

u

c
d

r

a

20

w

r

o
F

10

0

0 5025 75 100 125-55 -55 125250 50 75 100

o

vs. Ambient Temperature

200

)
W
m

(
c

P

150

n

o

i

t

a
p

i

s

s

i

100

d

r

e
w

o
P
r

50

o

t

c

e

l

l

o
C

0

Ambient temperature Ta ( C)Ambient temperature Ta ( C)

o

Fig.3 Collector-emitter Saturation

Voltage vs. Forward Current

6

A

A

A

e

A

g

a

t

l

o

v
n

o

i

t

a

r

u

t

a

s

r

e

t

t

i
m

)

e

V

-

(

r

t

)

t

o

a

c

s

e

(

l

l

E

o

C

V

C

m

m

1

5

.

5

0
=

c

I

4

3

2

1

0

0

A

m

m

m

3

5

7

105

Forward current IF (mA)

Fig.5 Current Transfer Ratio vs.

Forward Current

200

VCE=5V

180

)
%

(

160

R

T

140

C
o

i

t

120

a

r

r

100

e

f

s

n

80

a

r

t

t

60

n

e

r

r

40

u
C

20

0

o

Ta=25 C

1

Forward current IF (mA) Collector-emitter voltage VCE (V)

Ta=25 C

Fig.4 Forward Current vs. Forward

Voltage

O

15

500
200

)
A

m

100

(

F

I

t

50

n

e

r

r

u

20

c
d

r

10

a
w

r

5

o
F

2
1

0

o

Ta= 75 C

o

50 C

1.0

0.5

1.5 2.0 2.5 3.0

Forward voltage VF (V)

25 C

o

0 C

-25 C

o

o

Fig.6 Collector Current vs.

Collector-emitter Voltage

50

IF= 30mA

)

40

A
m

(
c

I

t

30

n

e

r

r

u

c
r

20

o

t

c

e

l

l

o

10

C

0

02 5 10 20 50

1 2 3 4 5 6 7 8 9

25mA

20mA

15mA

10mA

5mA

Ta=25 C

Pc(MAX.)

o

Part No. :

LTV-358T

Page :

9

BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

8 of

Property of LITE-ON Only

CHARACTERISTICS CURVES

Fig.7 Relative Current Transfer Ratio

vs. Ambient Temperature

150

)
%

(
o

i

t

a

r
r

100

e

f

s

n

a

r

t

t

n

e

r

r

u

50

c
e

v

i

t

a

l

e
R

0

20 40 60 80 100

Ambient temperature Ta ( C) Ambient temperature Ta ( C)

IF= 5mA
VCE=5V

o o

Fig.9 Collector Dark Current vs.

Ambient Temperature

10000

)
A

n

(

O
E

1000

C

I

t

n

e

r

r

u

c
k

r

a
d
r

o

t

c

e

l

l

o
C

VCE=20V

100

10

1

Ambient temperature Ta ( C)

o

Fig.8 Collector-emitter Saturation Voltage

vs. Ambient Temperature

0.10

e

g

a

t

l

o

0.08

v
n

o

i

t

a

r

0.06

u

t

a

s

r

e

t

t

0.04

i

)

m

V

e

(

-

r

)

t

o

t

a

0.02

c

s

(

e

l

l

E

o

C

V

C

0

20 40 80 100

IF= 20mA
IC= 1mA

60

Fig.10 Response Time vs. Load

Resistance

500

VCE=2V

200

IC= 2mA

o

Ta= 25 C

100

)

s

50

(
e

20

m

i

t

10

e

s

n

5

o
p

s

2

e
R

1

0.5

0.2

0.0520 40 60 80 100 0.1 0.2 0.5 1 2 5 10

Load resistance RL (k )

tr

tf

td

ts

Fig.11 Frequency Response

0

)
B
d

(
v
A

n

i

a

10

g
e

g

a

t

l

o

V

RL= 10k 1k

20

0.5

2 10 100 500

1 5 20 50

Frequency f (kHz)

VCE=2V
IC= 2mA
Ta= 25 C

100

o

Test Circuit for Response Time

Input

Output

Output

td

tr

Input

RD

Vcc

RL

Test Circuit for Frequency Response

Vcc

RD

RL

Output

10%
90%

ts

tf

Part No. :

LTV-358T

Page :

BNS-OD-C131/A4

9

LITE-ON TECHNOLOGY CORPORATION

9 of

Property of LITE-ON Only

Temperature Profile of Soldering Reflow

(1) One time soldering reflow is recommended within the condition of temperature and time

profile shown below.

(2) When using another soldering method such as infrated ray lamp, the temperature may rise

partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1)

RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)

Unit : mm

Part No. :

BNS-OD-C131/A4

LTV-358T

Page :

9