LITEON GBJ806, GBJ804, GBJ802, GBJ801, GBJ8005 Datasheet

LITE-ON
SEMICONDUCTOR

GBJ8005 thru GBJ810

GLASS PASSIVA T ED BRIDGE RECTIFIERS

FEATURES

Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic

technique results in inexpensive product
The plastic material has UL flamma b ility classification

94V-0
UL Recognition File # E95060

MECHANI CAL DATA

Polarity : Symbols molded on body
Weight : 0.23 ounces, 6.6 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

GBJ

R

A

Q

++++

P
L

M

N

~~~~~~~~

OO

----

F

I

H

D

G

B

E

C

J

K

All Dimensions in millimeter

- 50 to 1000

- 8.0

Amperes

GBJ

DIM.

A
B
C
D
E
F

G

H

I
J
K
L
M
N
O
P
Q
R

MIN.

29.70 30.30

17.0

4.70

10.80

2.30

3.10 3.40

3.40

4.40

2.50 2.90

2.00 2.40

0.90

9.80

7.30

3.80
(3.0) x 45

3.10

Volts

MAX.

20.3019.70

18.0

4.90

11.20

2.70

3.80

4.80

0.800.60

1.10

10.20

7.70

4.20

3.40

MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te current by 2 0%

Note 2

SYMBOL

RRM

V

RMS

V

DC

V

)

(AV)

I

FSM

I

V

R

I

2

I t

C

R

0JC

T

STG

T

F

J

J

GBJ8005

50
35
50

GBJ801

100

70

100

GBJ802

200
140
200

CHARACTERISTICS

Maximum Recurren t Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage

C

=110 C

(with heats ink

(without heatsink )

@TJ =25 C

@TJ =125 C

Maximum Average Forward
Rectif ied Current

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Maximum forward Voltage at 4.0A DC
Maximum DC Reverse Current

at Rated DC Blocking Voltage

2

I t Rating for fusing (t < 8.3ms)
Typical Junction

Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)

Operating Temperature Range
Storage Temperature Range

@T

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.

GBJ804

400
280
400

GBJ806

600
420
600

GBJ808

800

560
800

GBJ810

1000

1000

UNIT

700

8.0

2.9

170

1.0

5.0

500
120

55

1.6

A S

pF

C/W

-55 to +150

-55 to +150 C

REV. 2, 01-Dec-2000, KBDG02

V
V
V

A

A

V

uA

2

C

RATING AND CHARACTERISTIC CURVES
GBJ8005 thru GBJ810

FIG.1 - FORWARD CURRENT DERATING CURVE

8.0

7.0

6.0

5.0

4.0

3.0

2.0

AVERAGE FORWARD CURRENT

SINGLE PHASE HALF WAVE 60Hz

AMPERES

RESISTIVE OR INDUCTIVE LOAD

1.0

100

10

WITH HEATSINK

WITHOUT HEATSINK

20

40 60 80 100

120

140

CASE TEMPERATUR E , C

FIG.3 - TYPICAL JUNCTION CAPACITANCE

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

180
160

140
120

100

80
60

40

Single Half-Sine-Wave

20

(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES A T 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

10

1.0

CAPACITANCE , ( p F)

TJ= 25 C, f = 1MHz

1.0

1.0

4.0

10.0

100

REVERS E VOLTAGE , VOLTS

0.1

INSTANTANEOUS FORWARD CURRENT ,(A)

.01

0.4

0.2

0

0.6 0.8 1.0

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

TJ= 25 C

PULSE WIDTH 300us

1.2

1.4

1.6

1.8

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

1000

100

10

REVERSE CURRENT ,(uA)

1.0

INSTANTANEOUS

0.1
0

TJ= 125 C

TJ= 100 C

TJ= 50 C

TJ= 25 C

20

40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

REV. 2, 01-Dec-2000, KBDG02