LITEON GBJ1004, GBJ1002, GBJ1001, GBJ10005, GBJ1008 Datasheet

LITE-ON
SEMICONDUCTOR

GBJ10005 thru GBJ1010

GLASS PASSIVA T ED BRIDGE RECTIFIERS

FEATURES

Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic

technique results in inexpensive product
The plastic material has UL flamma b ility classification

94V-0
UL Recognition File # E95060

MECHANI CAL DATA

Polarity : Symbols molded on body
Weight : 0.23 ounces, 6.6 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

GBJ

R

A

Q

++++

P
L

M

N

~~~~~~~~

OO

----

F

I

H

D

G

B

E

C

J

K

All Dimensions in millimeter

- 50 to 1000

- 10

Amperes

GBJ

DIM.

A
B
C
D
E
F

G

H

I
J
K
L
M
N
O
P
Q
R

MIN.

29.70 30.30

17.0

4.70

10.80

2.30

3.10 3.40

3.40

4.40

2.50 2.90

2.00 2.40

0.90

9.80

7.30

3.80
(3.0) x 45

3.10

Volts

MAX.

20.3019.70

18.0

4.90

11.20

2.70

3.80

4.80

0.800.60

1.10

10.20

7.70

4.20

3.40

MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te current by 2 0%

DC

R

I

2

0JC

STG

GBJ

10005

50
35
50

F

J

J

CHARACTERISTICS

Maximum Recurren t Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage

Note 2

@TJ =25 C

@TJ =125 C

Maximum Average Forward
Rectif ied Current

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Maximum forward Voltage at 5.0A DC
Maximum DC Reverse Current

at Rated DC Blocking Voltage

2

I t Rating for fusing (t < 8.3ms)
Typical Junction

Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range

@T

C

=110 C

(with heats ink

(without heatsink )

SYMBOL

RRM

V

RMS

V

V

)

(AV)

I

FSM

I

V

I t

C

R

T

T

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 150mm x 150mm x 1.6mm Cu Plate Heatsink.

GBJ

1001

100

70

100

GBJ

1002

200
140
200

GBJ

1004

400
280
400

GBJ

1006

600
420
600

GBJ

1008

800

560
800

GBJ

1010
1000

700

1000

UNIT

10.0

3.0

170

1.05
10

500
120

A S

55

1.4

C/W

-55 to +150

-55 to +150 C

REV. 2, 01-Dec-2000, KBDG03

V
V
V

A

A

V

uA

2

pF

C

RATING AND CHARACTERISTIC CURVES
GBJ10005 thru GBJ1010

FIG.1 - FORWARD CURRENT DERATING CURVE

10.0

8.0

6.0

4.0

2.0

AVERAGE FORWARD CURRENT

SINGLE PHASE HALF WAVE 60Hz

AMPERES

RESISTIVE OR INDUCTIVE LOAD

1.0

100

10

WITH HEATSINK

WITHOUT HEATSINK

20

40 60 80 100

120

140

CASE TEMPERATUR E , C

FIG.3 - TYPICAL JUNCTION CAPACITANCE

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

180
160

140
120

100

80
60

40

Single Half-Sine-Wave

20

(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES A T 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

10

1.0

CAPACITANCE , ( p F)

TJ= 25 C, f= 1MHz

1.0

1.0

4.0

10.0

100

REVERS E VOLTAGE , VOLTS

0.1

INSTANTANEOUS FORWARD CURRENT ,(A)

.01

0.4

0.2

0

0.6 0.8 1.0

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

TJ= 25 C

PULSE WIDTH 300us

1.6

1.4

1.2

1.8

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

1000

TJ= 125 C

100

TJ= 100 C

10

REVERSE CURRENT ,(uA)

1.0

INSTANTANEOUS

0.1
0

PERCENT OF RATED PEAK REVERSE VO LTAGE, (%)

TJ= 50 C

TJ= 25 C

20

40

60 80 100

REV. 2, 01-Dec-2000, KBDG03