LITEON B170, B180, B190, B1110, B1100 Datasheet

LITE-ON
SEMICONDUCTOR

B170 thru B1100

SURFACE MOUNT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

MECHANICAL DAT A

Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams

REVERSE VOLTAGE ­ FORWARD CURRENT -

SMA

A

B

G

H

E

C

D

F

DIM. MIN. MAX.
A
B
C
D
E
F
G
H

All Dimensions in millimeter

70 to 100

1.0

Ampere

SMA

4.06 4.57

1.27

4.83 5.59

0.05 0.20

2.01 2.62

0.76 1.52

Volts

2.92 2.29

1.63

0.31 0.15

MAXIMUM RATI NGS AND ELECTRICA L CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load , d er ate curren t b y 20%

B170

70
49
70

F

J

J

=25 C

=25 C

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

V

R

I

C

R

0JL

T

STG

T

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Vol tage
Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current
Peak Forward Surge Current

8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)

Maximum forward
Voltage at 1.0A DC

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction
Capacitance (Note 1)

Typical Thermal Resistance (Note 2)
Operating Temperature Range

Storage Temperature Range

NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to Lead.

@T

@T

@T

@T

@T

L

=100 C

J

J

=100 C

J

J

=100 C

B180

80
56
80

1.0

30

0.79

0.69

0.5

5.0

30

25

-55 to +125

-55 to +150

B190

90
63
90

REV. 2, 01-Dec-2000, KSHA02

B110 0

100

70

100

UNIT

V
V
V

A

A

V

mA

pF

C/W

C
C

RATING AND CHARACTERISTIC CURVES
B170 thru B1100

FIG.1 - FORWARD CURRENT DERATING CURVE

1.0

0.8

0.6

0.4

0.2

AVERAGE FORWARD CURRENT

AMPERES

SINGLE PHASE HALF WAVE 60Hz
RESISTI V E OR INDUCT I VE LOAD

0

20 60 80 90 100

40

LEAD TEMPERATURE , C

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

10

1.0

120

140

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

30

20

10

Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL JUNCTION CAPACITANCE

1000

100

1.8

CAPACITANCE, (pF)

TJ= 25 C F= 1MHz

10

0.1

1.0 4.0

10.0

100

REVERSE VOLTAGE , (VOLTS)

0.1

INSTANTANEOUS FORWARD CURRENT, (A)

.01

0.4

0.2

0

0.6 0.8 1.0

TJ= 25 C
PULSEWIDTH:300usPULSEWIDTH:300us

1.6

1.4

1.2

INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

10

TJ= 125 C

1.0

TJ= 100 C

REVERSE CURRENT, (mA)

0.1

0.01

TJ= 25 C

INSTANTANEOUS

0.001
60 80 90

40

20

0

PERCENT OF RATED PEAK REVERSE VO LTAGE, (%)

100

120

140

REV. 2, 01-Dec-2000, KSHA02