LITEON B160B, B150B, B140B, B130B, B120B Datasheet
LITE-ON
SEMICONDUCTOR
B120B thru B160B
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification
94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANI CAL DATA
Case : Molded plastic
Polarity :Color band denotes cathode.
Weight : 0.003 ounces, 0.093 grams
REVERSE VOLTAGE FORWARD CURRENT -
SMB
A
B
G
H
E
C
D
F
DIM. MIN. MAX.
A
B
C
D
E
F
G
H
All Dimensions in millimeter
20 to 60
1.0
Ampere
SMB
4.06 4.57
1.96
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
Volts
3.94 3.30
2.21
0.31 0.15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te current by 20%
=25 C
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
F
V
R
I
J
C
R
0JL
J
T
STG
T
B120B B160B B150B B140B B130B
30
20
14
20
21
30
0.5
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Vol tage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forwar d Voltage at 1.0A D C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
@T
@T
@T
L
=110 C
J
J
=100 C
40
28
40
1.0
30
0.5
10
110
20
-55 to +125
-55 to +150
0.7
60
42
60
50
35
50
REV. 2, 01-Dec-2000, KSHB01
UNIT
V
V
V
A
A
V
mA
pF
C/W
C
C
RATING AND CHARACTERISTIC CURVES
B120B thru B160B
FIG.1 - FORWARD CURRENT DERATING CURVE
1.00
0.75
0.50
0.25
AVERAGE FORWARD CURRENT
AMPERES
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.00
20 60 80 100 120
40 140
LEAD TEMPERATURE , C
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
B120B to B140B
1.0
B150B to B160B
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
30
20
10
Pulse Width 8.3 ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FO RWARD SURG E CURREN T,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL JUNCTION CAPACITANCE
1000
100
0.1
INSTANTANEOUS FORWARD CURRENT, (A)
.01
0
0.2 0.4
TJ= 25 C
PULSEWIDTH:300us
0.6 0.8 1.0
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
CAPACITANCE, (pF)
TJ= 25 C F= 1MHz
10
0.1
1.0 4.0
10.0
100
REVERSE VOLTAG E , (VOLTS)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ= 125 C
1.0
0.1
0.01
TJ= 100 C
INSTANTANEOUS REVERSE CURRENT, (mA)
0.001
20
0
TJ= 25 C
60 80 100
40
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
120
140
REV. 2, 01-Dec-2000, KSHB01
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