LITEON 1N4006G, 1N4005G, 1N4004G, 1N4002G, 1N4001G Datasheet

...
LITE-ON SEMICONDUCTOR
1N4001G thru 1N4007G
GLASS PASS IVA T ED RECTIFIERS
FEATURES
Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0
MECHANI CAL DA T A
Case : JEDEC DO-41 molded plastic Polarity : Color band denotes cathode Weight : 0.012 ounces, 0.34 grams Mounting position : Any
REVERSE VOL TAGE ­ FORWARD CURRENT -
DO-41
A
Dim.
A B C D All Dimensions in millimeter
B
DO-41
Min.
25.4
4.10
0.71
2.00
50 to 1000
1.0
Amperes
A
D
Max.
-
5.20
0.86
2.70
Volts
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load , derate cu rr e n t b y 20%
1N
1N
V V
V I
I
R
T
T
RRM RMS
DC
(AV)
FSM
V
R
I
C
0JA
RR
T
STG
F
J
J
4001G
50 35 50
4002G
100
100
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltag e
Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward
Rectified Current Peak Forward Surge Current
8.3ms single half sine-wave super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 1.0A DC Maximum DC Reverse Current
at Rated DC Blocking Voltage Typical Junction Capacit ance (Note 1 )
Typical Thermal Resistance (Note 2) Maximum Reverse Recovery Time (Note 3) Operating Temperature Range
Storage Temperature Range
@T
75 C
A
=
@TJ=25 C
J
@T
=125 C
SYMBOL
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
F
3.Reverse Recovery Test Conditions:I
=0.5,IR=1A,IRR=0.25A.
70
1N
4003G
200 140 200
1N
4004G
400 280 400
1.0
30
1.1 5
50 10 45
2
-55 to +150
-55 to +150
1N
4005G
4006G 600 420 600
REV. 2, 01-Dec-2000, KDDC01
1N
800 560 800
4007G
1N
1000
700
1000
UNIT
V V V
A
A
V
uA
pF
C/W
us
C C
RATING AND CHARACTERISTIC CURVES 1N4001G thru 1N4007G
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
AVERAGE FORWARD CURRENT
SINGLE PHASE HALF WAVE 60Hz
AMPERES
RESISTIVE OR INDUCTIVE LOAD
0
25
100
10
50
75 100 125 150
AMBIENT TEMPERATURE , C
FIG.3 - TYPICAL JUNCTION CAPACITANCE
175
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
20
10
Pulse width 8.3ms Single Half-Sine-Wave (JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1
2
510
20
50 100
NUMBER OF CYCLES A T 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
CAPACITANCE , ( p F)
0.1
INSTANTANEOUS FORWARD CURRENT ,(A)
1.0 1
4
10
100
REVERS E VOLTAGE , VOLTS
0.01 0
0.2 0.4
0.6 0.8 1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
TJ= 25 C
PULSE WIDTH 300us
1.2
1.4
1.6
1.8
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
TJ= 125 C
10
1.0
INSTANTANEOUS REVERSE CURRENT ,(uA)
TJ= 25 C
0.1 60 80 100
40
20
0
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
120
140
REV. 2, 01-Dec-2000, KDDC01
Loading...