LINFINITY SG6100, SG6511, SG6101, SG6510 Service Manual
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SG6100/SG6511
SG6101/SG6510
DIODE ARRAY CIRCUITS
DESCRIPTION
The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic,
high breakdown, fast switching speed diode arrays. The SG6100/SG6511
is configured with 7 straight through diodes, while the SG6101/SG6510 has
8 straight through diodes.
These two diode array configurations allow the designer maximum flexibility
for circuit design and board layout. Since each diode within the array has
individual anode and cathode connections the device may be used in a
variety of applications. Also, due to the array's monolithic construction the
diode electrical parameters are very closely matched.
Both devices are available in ceramic DIP and flatpack and can be processed
to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.
CIRCUIT DIAGRAMS
FEATURES
••
• 75V minimum breakdown voltage
••
••
• 100mA current capability per diode
••
••
• Switching speeds less than 5ns
••
••
• Low leakage current < 25nA
••
HIGH RELIABILITY FEATURES
♦♦
♦ MIL-S-19500/474 QPL - 1N6100
♦♦
- 1N6101
- 1N6510
- 1N6511
♦♦
♦ Equivalent JANS, JANTXV, JANTX, JAN
♦♦
screening available
7 - STRAIGHT THROUGH DIODES
SG6100/SG6511
8 - STRAIGHT THROUGH DIODES
SG6101/SG6510
6/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue
1 (714) 898-8121
∞ ∞
∞ Garden Grove, CA 92841
∞ ∞
∞∞
∞ FAX: (714) 893-2570
∞∞
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) ....................................................
Output Current (I
Continuous .................................................................
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
), TC = 25°C
O
75V
300mA
THERMAL DATA
J Package (14 & 16 Pin):
Thermal ResistanceThermal Resistance-
F Package (14 Pin):
Thermal ResistanceThermal Resistance-
F Package (16 Pin):
Thermal ResistanceThermal Resistance-
Junction to Case, θ
Junction to Ambient, θ
Junction to Case, θ
Junction to Ambient, θ
Junction to Case, θ
Junction to Ambient, θ
JC
JC
JC
.................. 30°C/W
.............. 80°C/W
JA
.................. 80°C/W
........... 140°C/W
JA
.................. 70°C/W
........... 115°C/W
JA
RECOMMENDED OPERATING CONDITIONS (Note 3)
Operating Ambient Temperature Range
SG6100 ..........................................................-55°C to 150°C
SG6101 ..........................................................-55°C to 150°C
Note 3. Range over which the device is functional.
DIODE ARRAY SERIES
Operating Junction Temperature
Hermetic (J, F Packages) ............................................
Storage Temperature Range ............................
Lead Temperature (Soldering, 10 seconds) ..................
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).
Note B. The above numbers for
θJC are maximums for the limiting
thermal resistance of the package in a standard mounting configuration. The θ
guidelines for the thermal performance of the device/pc-
numbers are meant to be
JA
board system. All of the above assume no ambient
airflow.
SG6511 ..........................................................-55°C to 150°C
SG6510 ..........................................................-55°C to 150°C
-65°C to 200°C
150°C
300°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating ambient temperature of TA = 25°C for each diode. Low duty cycle pulse testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
Test Conditions UnitsParameter
Breakdown Voltage (V
Forward Voltage (V
Reverse Current (I
Capacitance (C)
)
F
)
R
(Note 4)
)
BR
Forward Recovery Time (tfr)
(Note 4)
IR = 5µA, Duty Cycle < 20%
Duty Cycle ≤ 2%, 300 µs pulse
= 100mA
I
F
= 10mA, TA = -55°C
I
F
V
= 20V
R
V
= 40V
R
= 40V, TA = 150°C
V
R
V
= 0V, f = 1MHz, Pin-to-pin
R
= 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
I
F
Reverse Recovery Time (trr)
(Note 4)
Note 4. The parameters, although guaranteed, are not 100% tested in production.
= IR = 200mA, irr = 20mA, RL = 100Ω
I
F
SG6100/SG6511
SG6010/SG6510
Min. Typ. Max.
75
1.0
1.0
25
100
50
4
15
5
V
V
V
nA
nA
µA
pf
ns
ns
6/91 Rev 1.1 2/94 LINFINITY Microelectronics Inc.
Copyright 1994 11861 Western Avenue
2 (714) 898-8121
∞ ∞
∞ Garden Grove, CA 92841
∞ ∞
∞∞
∞ FAX: (714) 893-2570
∞∞
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