Linear Technology RH37C Datasheet

RH37C

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PACKAGE

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8-LEAD CERDIP

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Precision Operational Amplifier

DUESCRIPTIO

The RH37C combines very low noise with excellent preci­sion and high speed specifications. The low 1/f noise
corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz
noise and low offset voltage make the RH37C an excellent
choice for low frequency military instrumentation applica­tions. The wafer lots are processed to LTC’s in-house
Class S flow to yield circuits usable in stringent military
applications.

For complete electrical specifications and performance
curves see the OP-27/OP-37 data sheet.

U U

BUR -I CIRCUIT

10k

20V

–

200Ω

10k

2

3

7

6

+

4

–20V

RH37C BI

A

W

O

LUTEXI T

S

A

WUW

ARB

U
G

I

S

Supply Voltage ..................................................... ±22V

Internal Power Dissipation................................ 500mW

Input Voltage ........................... Equal to Supply Voltage

Output Short-Circuit Duration ......................... Indefinite

Differential Input Current (Note 8) ..................... ±25mA

Operating Temperature Range ............. – 55°C to 125°C

Junction Temperature Range............... –55°C to 150°C

Storage Temperature Range ................ –65°C to 150°C

Lead Temperature (Soldering, 10 sec)................. 300°C

, LTC and LT are registered trademarks of Linear Technology Corporation.

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8-LEAD TO-5 METAL CAN

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TABLE 1: ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS

V

OS

∆V
∆Temp

∆V
∆Time Voltage Stability

I

OS

I

B

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1

V

TRIM

2

OS

–IN

3
4

+IN

–

5

V

–

+

W PACKAGE

10-LEAD CERPAC

(Preirradiation) (Note 9)

TA = 25°C SUB- SUB-

Input Offset Voltage 1 100 4 300 2, 3 µV
Average Offset Drift 4, 7 1.8 µV/°C

OS

Long-Term Input Offset 2, 4 2 µV/Month

OS

Input Offset Current 75 1 135 2, 3 nA
Input Bias Current ±80 1 ±150 2, 3 nA

–55°C ≤ TA ≤ 125°C

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1

RH37C

TABLE 1: ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS

e

n

i

n

CMRR Common Mode VCM = ±11V 100 1 dB

PSRR Power Supply VS = ±4V to ±18V 94 1 dB

A

VOL

V

OUT

SR Slew Rate RL = 2k, A
GBW Gain-Bandwidth Product fO = 10kHz (A

Z

O

P

D

Input Noise Voltage 0.1Hz to 10Hz 4, 5 0.25 µV
Input Noise Voltage Density fO = 10Hz 3 8.0 nV/√Hz

= 30Hz 4 5.6 nV/√Hz

f

O

= 1000Hz 4 4.5 nV/√Hz

f

O

Input Noise Current Density fO = 1000Hz 4, 6 0.6 pV/√Hz
Input Resistance 2 GΩ

Common Mode
Input Voltage Range 4 ±11 ±10.2 V

Rejection Ratio VCM = ±10V 94 2, 3 dB

Rejection Ratio VS = ±4.5V to ±18V 86 2, 3 dB
Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 700 4 300 5, 6 V/mV

≥ 600Ω, VO = ±1V 4 200 V/mV

R

L

= ±4V

V

S

Maximum Output RL = 2k ±11.5 4 ±10.5 5, 6 V
Voltage Swing R

Open-Loop Output Resistance VO = 0, IO = 0 470 Ω
Power Dissipation 170 1 mW

= 600Ω±10.0 4 V

L

≥ 511 7 V/µs

VCL

≥ 5) 4 45 MHz

= 1MHz (A

f

O

VCL

≥ 5) 40 MHz

VCL

(Preirradiation) (Note 9)

TA = 25°C SUB- SUB-

–55°C ≤ TA ≤ 125°C

P-P

TABLE 1A: ELECTRICAL CHARACTERISTICS

10KRAD(Si)

SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS

V

OS

I

OS

I

B

CMRR Common Mode VCM = ±11V 100 100 97 94 90 dB

PSRR Power Supply VS = ±4V to ±18V 94 94 92 90 86 dB

A

VOL

V

OUT

SR Slew Rate RL ≥ 2k 1.7 1.7 1.7 1.5 1 V/µs
Z

O

P

D

Input Offset Voltage 1 100 130 180 280 400 µV
Input Offset Current 75 75 90 120 180 nA
Input Bias Current ±80 ±80 ±125 ±200 ±400 nA
Input Resistance 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) 2 (Typ) GΩ

Common Mode
Input Voltage Range 4 ±11 ±11 ±11 ±11 ±11 V

Rejection Ratio

Rejection Ratio
Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 700 700 700 700 400 V/mV
Maximum Output RL ≥ 10k ±11.5 ±11.5 ±11.5 ±11.5 ±11.5 V

Voltage Swing RL ≥ 600Ω±10.0 ±10.0 ±10.0 ±10.0 ±10.0 V

Open-Loop Output Resistance VO = 0, IO = 0 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) Ω
Power Dissipation 170 170 170 170 170 mW

(Postirradiation) (Note 10)

100KRAD(Si)50KRAD(Si)20KRAD(Si)

200KRAD(Si)

2