Linear Technology RH1013M Datasheet

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DUESCRIPTIO

RH1013M

Dual Precision

Operational Amplifier

The RH1013M is the first precision dual operational ampli­fier which directly upgrades designs in the industry stan­dard 8-pin DIP LM158/MC1558/OP-221 pin configura­tion. Low offset voltage (300µV max), low drift ( 2.5µV/
°C), low offset current ( 1.5nA), and high gain (1.2 million
min) combine to make the RH1013M two truly precision
amplifers in one package.

The wafer lots are processed to Linear Technology’s in­house Class S flow to yield circuits usable in stringent
military applications.

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BUR -I CIRCUIT

50k

20V

100Ω

50k

RH1013M

–20V

RH1013M BI

Supply Voltage ..................................................... ±22V

Differential Input Voltage ...................................... ±30V

Input Voltage .............. Equal to Positive Supply Voltage

................................. 5V Below Negative Supply Voltage

Output Short-Circuit Duration ......................... Indefinite

Operating Temperature Range .............. – 55°C to 125°C

Storage Temperature Range ................. –65°C to 150°C

Lead Temperature (Soldering, 10 sec)..................300°C

, LTC and LT are registered trademarks of Linear Technology Corporation.

TOTAL DOSE BIAS CIRCUIT

10k

15V

–

10k

8V

+

–15V

RH1013M TDBC

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TOP VIEW

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(CASE)

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H PACKAGE

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RDER I FOR ATIO

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OUT B

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–IN B

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+IN B

PACKAGE

OUT A

2

–IN A

+IN A

8-LEAD TO-5 METAL CAN

OUT A

–IN A
+IN A

–

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J8 PACKAGE

8-LEAD CERAMIC DIP

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–IN B

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+IN B

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OUT A

–IN A
+IN A

NC

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–

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10-LEAD FLATPAK METAL SEALED

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BOTTOM BRAZED

TOP VIEW

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V+
OUT B
–IN B
+IN B
NC

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RH1013M

TABLE 1: ELECTRICAL CHARACTERISTICS

(Preirradiation)

VS = ±15V, VCM = 0V, unless otherwise noted.

TA = 25°C SUB- SUB-

SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS

V

OS

V

Temp Voltage

V

Time

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OS

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B

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R

IN

A

VOL

CMRR Common-Mode Rejection VCM = 13.5V, –15V 97 1 dB

PSRR Power Supply Rejection VS = ±10V to ±18V 100 1 97 2,3 dB

V

OUT

SR Slew Rate 0.2 4 V/µs
I

S

Input Offset Voltage 300 1 550 2,3 µV

2 450 1 750 3 µV

VCM = 0.1V, TA = 125°C 750 2 µV

Average Tempco of Offset 1 2.5 µV/°C

OS

Long Term VOS Stability 0.5 µV/Mo

OS

Input Offset Current 10 1 20 2,3 nA

2 10 1 20 2,3 nA

Input Bias Current 30 1 45 2,3 nA

2 50 1 120 2,3 nA
Input Noise Voltage 0.1Hz to 10Hz 0.55 µV
Input Noise Voltage fO = 10Hz 24 nV/ Hz
Density fO = 1000Hz 22 nV/ Hz
Input Noise Current fO = 10Hz 0.07 pA/ Hz

Density
Input Resistance Differential 1 70 M

Common Mode 4 G

Large-Signal Voltage Gain VO = ±10V, RL 10k 1.2 4 0.25 5,6 V/µV

VO = ±10V, RL 600 0.5 4 V/µV
VO = 5mV to 4V, RL = 500 2 1 V/µV

Input Voltage Range 1 13.5 V

1 –15.0 V

1,2 3.5 V
1,2 0 V

Ratio VCM = 13V, –14.9V 94 2,3 dB

Ratio
Channel Separation VO = ±10V, RL = 2k 120 1 dB
Output Voltage Swing RL 2k ±12.5 4 ±11.5 5,6 V

Output Low, No Load 2 25 4 mV
Output Low, 600 to GND 2 10 4 18 5,6 mV
Output Low, I
Output High, No Load 2 4.0 4 V
Output High, 600 to GND 2 3.4 4 3.1 5,6 V

Supply Current Per Amplifier 0.55 1 0.70 2,3 mA

= 1mA 2 350 4 mV

SINK

2 0.50 1 0.65 2,3 mA

–55°C TA 125°C

P-P

2

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation)

VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.

RH1013M

10KRAD(Si) 20KRAD(Si)

SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS

V

I

I

CMRR Common-Mode Rejection VCM = 13V, – 15V 97 97 94 90 86 dB

PSRR Power Supply Rejection VS = ±5V to ±18V 100 98 94 86 80 dB

A
V

SR Slew Rate RL 10k 0.13 0.12 0.11 0.07 0.01 V/µs
I

Input Ofset Voltage 450 450 600 750 900 µV

OS

2 600 600 750 900 µV

Input Offset Current 10 10 15 20 25 nA

OS

21010 15 20 nA

Input Bias Current 60 75 100 175 250 nA

B

2 80 100 125 200 nA

Input Voltage Range 1 13.5 13.5 13.5 13.5 13.5 V

1 –15.0 –15.0 –15.0 –15.0 –15.0 V
2 3.5 3.5 3.5 3.5 V
20 0 0 0 V

Ratio

Ratio
Large-Signal Voltage Gain RL 10k, VO = ±10V 500 200 100 50 25 V/mV

VOL

Maximum Output Voltage RL 10k ±12.5 ±12.5 ±12.5 ±12.5 ±12.5 V

OUT

Swing Output Low, No Load 2 25 30 40 50 mV

Output Low, 600 to GND 2 10 10 10 10 mV
Output Low, I
Output High, No Load 2 4.0 4.0 4.0 4.0 V
Output High, 600 to GND 2 3.4 3.2 3.0 2.8 V

Supply Current Per Amplifier 0.55 0.55 0.55 0.55 0.55 mA

S

= 1mA 2 0.6 0.8 1.0 1.6 V

SINK

2 0.50 0.50 0.50 0.50 mA

50KRAD(Si) 100KRAD(Si)

200KRAD(Si)

Note 1: Guaranteed by design, characterization, or correlation to other

tested parameters..

Note 2: Specification applies for V

= 1.4V.

V

OUT

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TABLE 2: ELECTRICAL TEST REQUIRE E TS

MIL-STD-883 TEST REQUIREMENTS SUBGROUP

Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6
Group A Test Requirements (Method 5005) 1,2,3,4,5,6
Group B and D for Class S, and 1,2,3

Group C and D for Class B
End Point Electrical Parameters (Method 5005)

* PDA applies to subgroup 1. See PDA Test Notes.

PDA Test Notes

The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.

Linear Technology Corporation reserves the right to test to tighter limits
than those given.

+

= 5V, V

S

–

= 0V, VCM = 0V,

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