Linear Technology RH1009 Datasheet

DUESCRIPTIO

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LUTEXI T

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PACKAGE

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RDER I FOR ATIO

BOTTOM VIEW

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H PACKAGE

3-LEAD TO-46 METAL CAN

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RH1009

2.5V Reference

The RH1009 is a general purpose 2.5V shunt regulator
diode designed to operate over a wide current range while
maintaining good stability with time and temperature. The
adjust terminal allows either temperature coefficient to be
minimized or the reference voltage to be adjusted without
changing the temperature coefficient. Because it operates
as a shunt regulator it can be used equally well as a positive
or negative reference.

The wafer lots are processed to Linear Technology’s in­house Class S flow to yield circuits usable in stringent
military applications.

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BUR -I CIRCUIT

20V

2k

NC

Reverse Breakdown Current ................................ 20mA

Forward Current................................................... 10mA

Operating Temperature Range ............. –55°C to 125°C

Storage Temperature Range ................. –65°C to 150°C

Lead Temperature (Soldering, 10 sec)..................300°C

, LTC and LT are registered trademarks of Linear Technology Corporation.

TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation)

SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS

V

Z

∆V

Z

∆I

R

r

Z

∆V

Z

∆V

Z

∆Time I

RH1009 BI

TJ = 25°C SUB- SUB-

Reverse Breakdown IR = 1mA 2.495 2.505 1 V
Voltage

Reverse Breakdown 400µA ≤ IR ≤ 10mA 6 1 10 2,3 mV
Voltage Change with Current

Reverse Dynamic IR = 1mA 1 0.6 1 Ω
Impedance

Temperature Stability 1 15 mV
Long Term Stability TA = 25°C±0.1°C, 20 ppm/kHr

= 1mA

R

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

–55°C ≤ TJ ≤ 150°C

1

RH1009

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 2)

20KRAD(Si)10KRAD(Si)

SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS

V

∆V
∆I

r

Z

Note 1: Guaranteed by design, characterization or correlation to other
tested parameters.

TOTAL DOSE BIAS CIRCUIT

Reverse Breakdown IR = 1mA 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 V

Z

Voltage
Reverse Breakdown Voltage 400µA ≤ IR ≤ 10mA 6 6 8 10 12 mV

Z

Change with Current

Z

Reverse Dynamic IR = 1mA 1 0.6 0.6 0.8 1.0 1.4 Ω
Impedance

Note 2: T

15V

12.4k

= 25°C unless otherwise noted.

A

RH1009 TDBC

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50KRAD(Si)

100KRAD(Si) 200KRAD(Si)

TABLE 2: ELECTRICAL TEST REQUIRE E TS

MIL-STD-883 TEST REQUIREMENTS SUBGROUP

Final Electrical Test Requirements (Method 5004) 1*,2,3
Group A Test Requirements (Method 5005) 1,2,3
Group C and D End Point Electrical Parameters 1

(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.

PDA Test Notes

The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burn­in in that lot shall be used to determine the percent for the lot.

Linear Technology Corporation reserves the right to test to tighter limits
than those given.

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TYPICAL PERFORMANCE CHARACTERISTICS

Reverse Breakdown Voltage

2

Reverse Breakdown Voltage

2.502
IR = 1mA

2.501

2.500

2.499

REVERSE BREAKDOWN VOLTAGE (V)

2.498

1

10 100 1000

TOTAL DOSE KRAD (Si)

RH1009 G01

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417 ● [phone]
FAX: [phone]

●

TELEX: 499-3977 ● www.linear-tech.com

Change with Current

0

–2

–4

–6

–8

–10

CHANGE WITH CURRENT (mV)

REVERSE BREAKDOWN VOLTAGE

–12

–14

1

600µA ≤ IR ≤ 10mA

10 100 1000

TOTAL DOSE KRAD (Si)

RH1009 G02

I.D. No. 66-10-0174 Rev. B 0497

LT/HP 0497 500 REV B • PRINTED IN USA

 LINEAR TECHNOLOGY CORPORATION 1990