LINEAR TECHNOLOGY LTC4224 Technical data

DESIGN FEATURES L
CHARGE
PUMP
0.8V
0.8V
2.4V
V
CC
–+–+–
+
+ –
+
+
+
CHARGE
PUMP
+
GATE
PULLDOWN
LOGIC
CONTROL
GATE
PULLDOWN
0.8V
+
0.8V
V
CC1
V
CC2
10µA
10µA
GATE1
GATE2
ON1
FAULT
ON2
SENSE2
SENSE1
GND
ACL1
ACL2
10µA
10µA
5.5V
5.5V
ON2
ON1
ECB1
ECB2
V
CC1
UV
V
CC2
UV
25mV
25mV
V
CC
V
CC
V
CC
V
CC
Dual Hot Swap Controller in 3mm × 2mm DFN is Perfect for Backplane or Card Resident 1V–6V Applications
by CY Lai
Introduction
Linear Technology Magazine • September 2008
Figure 1. Functional block diagram of the LTC4224
shrinking total solution size. It does this by combining two feature-rich and independent Hot Swap controllers for 1V–6V applications in a 3mm × 2mm DFN package.
Figure 1 shows a functional block diagram of the LTC4224. The ON pin is used to turn an external N-channel MOSFET on or off via the GATE pin. When commanded on, an internal charge pump pulls the GATE above the supply rail to fully enhance the MOSFET, reducing its series resis­tance to several mΩ. The LTC4224’s ability to derive power from the higher
of its two supplies allows it to control load voltages as low as 1V. Active cur­rent limiting (ACL) acts on the GATE when the load current causes more than 25mV of voltage drop across the sense resistor. An electronic circuit breaker (ECB) performs the role of a timekeeper, latching off the MOSFET in the event of a prolonged current overload.
Operation
Figure 2 shows the LTC4224 together with two N-channel MOSFETs and two sense resistors in a 5V backplane resi­dent Hot Swap application. Initially, the ON pin is pulled high in the ab­sence of an add-in card and the GATE is held low, shutting off the MOSFET. When an add-in card is fully inserted into the backplane connector, the ON pin is pulled low through the ground connections on the card connector. Spurious ON transitions can occur as the connectors mate. To prevent the MOSFET from turning on prema turely, the LTC4224 waits out these short term transitions with an internal 10ms debounce delay that restarts every time ON transitions high.
To turn on the MOSFET, an in­ternal charge pump sources 10µA to soft-start the GATE with a slew rate of 10µA/C
, where C
ISS
is the exter-
ISS
nal MOSFET’s gate capacitance. The start-up inrush current flowing into the load capacitor C (C
OUT/CISS
) • 10µA. However, if the
is limited to
OUT
sense resistor voltage drop becomes too large, the inrush current is limited at 25mV/R
by the ACL. The ECB
SENSE
monitors the ACL, and if it detects that the current limit is still active 5ms after the GATE began ramping, the MOSFET latches off and FAULT pulls low. If
-
21
L DESIGN FEATURES
LTC4224
V
CC1
SENSE1
SENSE2
GATE1
GATE2
GND
ON1
ON2
FAULT
V
CC2
R1
0.004Ω
R2
0.004Ω
5V 5A
5V 5A
5V
R3 10k
Q1
Si7336ADP
Q2
Si7336ADP
BACKPLANE
CONNECTOR1
CARD CONNECTOR1
PRSNT1
PRSNT2
BACKPLANE
CONNECTOR2
CARD CONNECTOR2
0.5µs/DIV
I
OUT2
8A/DIV
V
OUT2
5V/DIV
GATE2
5V/DIV
2ms/DIV
I
OUT1
1A/DIV
V
OUT1
5V/DIV
GATE1
5V/DIV
LTC4224
V
CC1
SENSE1
GATE1
R1
0.015Ω
5V
I
GATE
C
GATE
R
G
10Ω
C
LOAD
Q1
Figure 2. Hot Swap application for two add-in cards
C
cannot be sufficiently charged
OUT
within this period, connect a capaci­tor from GATE to ground to lower the inrush current, as shown in Figure 3. With C duced to (C Adjusting C current stays below the ECB threshold prevents ECB faults with large load capacitors.
Overcurrent Protection
An important feature of the LTC4224 is its 25mV electronic circuit breaker (ECB) threshold with a 10% tolerance. This low ECB threshold allows the use of sense resistors with lower power rat­ings and hence smaller packages. In addition, the ECB threshold must not cut excessively into the supply voltage
, the inrush current is re-
GATE
OUT
GATE
/(C
+ C
GATE
ISS
so that the inrush
)) 10µA.
tolerance of downstream circuits. For instance, if the downstream circuits can tolerate at most a 5% variation on the 1V supply, the ECB threshold of an upstream Hot Swap controller must be significantly lower than 50mV.
To guard against damage to the external MOSFET from excessive power dissipation, active current limiting (ACL) regulates the gate to limit the sense resistor’s voltage drop to about 25mV. To minimize external components, the current limit loop is compensated by the parasitic gate capacitance C remains stable for C
of the MOSFET and
ISS
values as low
ISS
as 600pF. During ACL, the ECB acti­vates and initiates an internal time-out period of 5ms. The waveform in Figure 4 shows the LTC4224 limiting the
current and subsequently latching off the MOSFET due to a mild current overload at the output lasting longer than 5ms. FAULT is pulled low; this could either instruct the microproces­sor to take actions or light an LED to attract operator’s attention.
In the event of a severe short-circuit, the current typically overshoots the current limit level significantly as the gate overdrive of the external MOSFET is large initially. The LTC4224 re­sponds in less than 0.1µs to swiftly discharge the gate with a 100mA cur­rent sink. Figure 5 shows the LTC4224 bringing the current under control in less than 0.5µs when a 3.3V rail is shorted into a 10m load without any load capacitance. Also due to the fast ACL is the absence of gate undershoot, despite the speed at which the gate is discharged. The potential peak current is dictated by DC resistances along the power path (trace resistance + R the MOSFET + R
+ 10m), while
SENSE
DSON
of
the path’s parasitic inductance limits the current slew rate.
After the MOSFET latches off, the ON pin must be pulled above 0.8V to reset the internal fault latch. Al­ternatively, recycle the supply below its UV level. The LTC4224-1 latches off after a fault, while the LTC4224-2 automatically tries to apply power four seconds after latching off.
Optical Transceiver Hot Swap Application
Optical transceivers such as those specified for the popular XENPAK/X2
Figure 3. A method to adjust inrush current by gate capacitor. RG prevents parasitic self­oscillation in Q1
22
Figure 4. Active current limiting latches off the external MOSFET following a mild overcurrent
Figure 5. Fast current limit isolates severe short circuit fault in less than 0.5µs
Linear Technology Magazine • September 2008
Loading...
+ 1 hidden pages