LTC4089/LTC4089-5
4
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SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Internal Ideal Diode
R
FWD
Incremental Resistance, VON
Regulation
I
BAT
= 100mA 125
m
R
DIO,ON
ON Resistance V
BAT
to V
OUT
I
BAT
= 600mA 215
m
V
FWD
Voltage Forward Drop (V
BAT
- V
OUT
)I
BAT
= 5mA
I
BAT
= 100mA
I
BAT
= 600mA
●
10 30
55
160
50 mV
mV
mV
V
OFF
Diode Disable Battery Voltage 2.8 V
I
FWD
Load Current Limit, for VON
Regulation
550 mA
I
D(MAX)
Diode Current Limit 2.2 A
External Ideal Diode
V
FWD, EXT
External Diode Forward Voltage 20 mV
Logic
V
OL
Output Low Voltage (CHRG, HVPR) I
SINK
= 5mA
●
0.1 0.4 V
V
IH
Input High Voltage HVEN, SUSP, HPWR Pin Low to High 2.3 V
V
IL
Input Low Voltage HVEN, SUSP, HPWR Pin High to Low 0.3 V
I
PULLDN
Logic Input Pull Down Current SUSP, HPWR 2 µA
I
HVEN
HVEN Pin Bias Current V
HVEN
= 2.3V
V
HVEN
= 0V
6
0.01
20
0.1
µA
µA
V
CHG,SD
Charger Shutdown Threshold
Voltage on TIMER
●
0.14 0.4 V
I
CHG,SD
Charger Shutdown Pull-Up Current
on TIMER
V
TIMER
= 0V
●
514 µA
NTC
I
VNTC
VNTC Pin Current V
VNTC
= 2.5V
●
1.4 2.5 3.5 mA
V
VNTC
VNTC Bias Voltage I
VNTC
= 500µA
●
4.4 4.85 V
I
NTC
NTC Input Leakage Current V
NTC
= 1V 0
±1
µA
V
COLD
Cold Temperature Fault Threshold
Voltage
Rising Threshold
Hysteresis
0.74•V
VNTC
0.02•V
VNTC
V
V
V
HOT
Hot Temperature Fault Threshold
Voltage
Falling Threshold
Hysteresis
0.29•V
VNTC
0.01•V
VNTC
V
V
V
DIS
NTC Disable Voltage NTC Input Voltage to GND (Falling)
Hysteresis
●
75 100
35
125 mV
mV
The ● denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. HVIN = 12V, BOOST = 17V, VIN = 5V, V
BAT
= 3.7V, HVEN = 12V,
HPWR = 5V, R
PROG
= 100k, R
CLPROG
= 2k, SUSP = 0V, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: V
CC
is the greater of VIN, V
OUT
or V
BAT
Note 3: All voltage values are with respect to GND.
Note 4: This IC includes over-temperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperatures will exceed 110°C when over-temperature protection is
active. Continuous operation above the specifi ed maximum operating
junction temperature may result in device degradation or failure.
Note 5: The LTC4089/LTC4089-5 are guaranteed to meet specifi ed
performance from 0°C to 85°C and are designed, characterized and
expected to meet these extended temperature limits, but are not tested
at –40°C and 85°C.
Note 6: Guaranteed by long term current density limitations.
Note 7: Total input current is equal to this specifi cation plus 1.002 • I
BAT
where I
BAT
is the charge current.
Note 8: Accuracy of programmed current may degrade for currents greater
than 1.5A.
Note 9: Current limit guaranteed by design and/or correlation to static test.
Slope compensation reduces current limit at high duty cycle.