Complete Charger Controller for 2-, 3- or 4-Cell
Lithium-Ion Batteries
■
High Conversion Efficiency: Up to 96%
■
Output Currents Exceeding 4A
■
±0.8% Accurate Preset Voltages: 8.4V, 12.6V, 16.8V
■
Built-In Charge Termination with Automatic Restart
■
AC Adapter Current Limiting Maximizes Charge Rate*
■
Automatic Conditioning of Deeply Discharged
Batteries
■
Thermistor Input for Temperature Qualified Charging
■
Wide Input Voltage Range: 6V to 28V
■
0.5V Dropout Voltage; Maximum Duty Cycle: 98%
■
Programmable Charge Current: ±4% Accuracy
■
Indicator Outputs for Charging, C/10 Current
Detection and AC Adapter Present
■
Charging Current Monitor Output
■
16-Pin Narrow SSOP Package
U
APPLICATIOS
■
Notebook Computers
■
Portable Instruments
■
Battery-Backup Systems
■
Standalone Li-Ion Chargers
LTC4006
4A, High Efficiency,
Standalone Li-Ion
Battery Charger
U
DESCRIPTIO
The LTC®4006 is a complete constant-current/constantvoltage charger controller for 2-, 3- or 4-cell lithium batteries in a small package using few external components.
The PWM controller is a synchronous, quasi-constant frequency, constant off-time architecture that will not generate audible noise even when using ceramic capacitors.
The LTC4006 is available in 8.4V, 12.6V and 16.8V versions
with ±0.8% voltage accuracy. Charging current is program-
mable with a single sense resistor to ±4% typical accuracy.
Charging current can be monitored as a representative
voltage at the I
resistor, sets the total charge time or is reset to 25% of total
charge time after C/10 charging current is reached. Charging automatically resumes when the cell voltage falls below
3.9V/cell.
Fully discharged cells are automatically trickle charged at
10% of the programmed current until the cell voltage exceeds 2.5V/cell. Charging terminates if the low-battery
condition persists for more than 25% of the total charge
time.
The LTC4006 includes a thermistor sensor input that
suspends charging if an unsafe temperature condition is
detected and automatically resumes charging when the
battery temperature returns to within safe limits.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners. Protected by U.S. Patents
including 5723970.
pin. A timer, programmed by an external
MON
TYPICAL APPLICATIO
DCIN
0V TO 28V
3A
V
LOGIC
CHG
ACP
CHARGING
CURRENT MONITOR
THERMISTOR
10k
NTC
0.47µF
U
32.4k
0.0047µF
309k
TIMING
RESISTOR
(~2 HOURS)
100k
0.1µF
0.12µF
4A Li-Ion Battery Charger
INPUT SWITCH
T
LTC4006
INFET
CLP
CLN
TGATE
BGATE
PGND
CSP
BAT
DCIN
CHG
ACP/SHDN
I
MON
NTC
R
I
TH
6k
GND
5k
15nF
0.033Ω
20µF
10µH
TO SYSTEM LOAD
0.025Ω
4006 TA01
BATTERY
20µF
4006fa
1
LTC4006
WW
W
ABSOLUTE MAXIMUM RATINGS
U
U
W
PACKAGE/ORDER INFORMATION
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(Note 1)
Voltage from DCIN, CLP, CLN, TGATE, INFET,
ACP/SHDN, CHG to GND ....................... +32V to –0.3V
Voltage from CLP to CLN..................................... ±0.3V
CSP, BAT to GND................................... +28V to –0.3V
to GND ................................................. +7V to –0.3V
R
T
NTC ........................................................ +10V to –0.3V
Operating Ambient Temperature Range
(Note 4) ............................................. –40°C to 85°C
DCIN
CHG
ACP/SHDN
GND
NTC
I
I
MON
Operating Junction Temperature ......... –40°C to 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ELECTRICAL CHARACTERISTICS
temperature range (Note 4), otherwise specifications are at T
SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS
DCIN Operating Range628V
I
DCIN
V
TOL
I
TOL
T
TOL
Shutdown
UVLOUndervoltage Lockout ThresholdDCIN Rising, V
Current Sense Amplifier, CA1
CMSLCA1/I1 Input Common Mode Low
CMSHCA1/I1 Input Common Mode High
DCIN Operating CurrentSum of Current from CLP, CLN, DCIN35mA
Voltage Accuracy(Note 2)
Current Accuracy (Note 3)V
Termination Timer AccuracyRRT = 270k
Battery Leakage CurrentDCIN = 0V2035µA
Shutdown Threshold at ACP/SHDN
DCIN Current in ShutdownV
Input Bias Current Into BAT Pin11.67µA
The ● denotes specifications which apply over the full operating
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Target = 100mV– 44%
BAT
– V
CSP
≤ V
LOBAT
Target = 10mV
BAT
SHDN
BAT
T
= 20V, V
DCIN
Target = 10mV–6060%
BAT
,–4040%
= 0V, V
= 0V
TOP VIEW
1
2
3
4
R
T
5
6
7
TH
8
GN PACKAGE
16-LEAD PLASTIC SSOP
= 125°C, θJA = 110°C/W
JMAX
= 12V unless otherwise noted.
BAT
= 12V
BAT
ORDER PART
INFET
16
BGATE
15
PGND
14
TGATE
13
CLN
12
CLP
11
BAT
10
CSP
9
NUMBER
LTC4006EGN-2
LTC4006EGN-4
LTC4006EGN-6
GN PART MARKING
40062
40064
40066
●
8.3168.48.484V
●
12.47412.612.726V
●
16.63216.816.968V
●
–55%
●
–1515%
●
●
–10010µA
●
4.24.75.5V
●
12.5V
●
0V
●
2545µA
V
– 0.2V
CLN
4006fa
2
LTC4006
ELECTRICAL CHARACTERISTICS
temperature range (Note 4), otherwise specifications are at T
The ● denotes specifications which apply over the full operating
= 25°C. V
A
DCIN
= 20V, V
= 12V unless otherwise noted.
BAT
SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS
Current Comparators I
I
TMAX
I
TREV
Maximum Current Sense Threshold (V
Reverse Current Threshold (V
CMP
and I
REV
CSP
– V
)V
CSP
BAT
– V
)–30mV
BAT
ITH
= 2.5V
●
140165200mV
Current Sense Amplifier, CA2
Transconductance1mmho
Source CurrentMeasured at ITH, V
Sink CurrentMeasured at ITH, V
= 1.4V– 40µA
ITH
= 1.4V40µA
ITH
Current Limit Amplifier
Transconductance1.5mmho
V
I
CLP
CLP
Current Limit Threshold
●
93100107mV
CLP Input Bias Current100nA
Voltage Error Amplifier, EA
Transconductance1mmho
Sink CurrentMeasured at ITH, V
OVSDOvervoltage Shutdown Threshold as a Percent
= 1.4V36µA
ITH
●
102107110%
of Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (V
Forward Regulation Voltage (V
Reverse Voltage Turn-Off Voltage (V
INFET “On” Clamping Voltage (V
INFET “Off” Clamping Voltage (V
DCIN
DCIN
– V
)DCIN Voltage Ramping Up
DCIN
DCIN
– V
DCIN
CLN
– V
– V
CLN
)
– V
INFET
INFET
from V
CLN
)DCIN Voltage Ramping Down
CLN
)I
)I
= 1µA
INFET
= –25µA0.25V
INFET
– 0.1V
●
00.170.25V
●
●
–60–25mV
●
55.86.5V
2550mV
Thermistor
NTCVRReference Voltage During Sample Time4.5V
High ThresholdV
NTC
Rising
●
NTCVRNTCVRNTCVRV
• 0.48• 0.5• 0.52
Low ThresholdV
NTC
Falling
●
NTCVRNTCVRNTCVRV
• 0.115• 0.125• 0.135
Thermistor Disable CurrentV
≤ 10V10µA
NTC
Indicator Outputs (ACP/SHDN, CHG)
C10TOLC/10 Indicator AccuracyVoltage Falling at PROG
LBTOLLOBAT Threshold AccuracyLTC4006-6
LTC4006-2
LTC4006-4
RESTART Threshold AccuracyLTC4006-6
LTC4006-2
LTC4006-4
V
OL
V
OH
I
PO
Low Logic Level of ACP/SHDN, CHGIOL = 100µA
High Logic Level of ACP/SHDNIOH = –1µA
Pull-Up Current on ACP/SHDNV = 0V–10µA
IC10C/10 Indicator Sink Current from CHGVOH = 3V
I
OFF
Off State Leakage Current of CHGVOH = 3V–11µA
●
0.3750.4000.425V
●
4.704.935.14V
●
7.277.57.71V
●
9.701010.28V
●
7.57.87.96V
●
11.3511.711.94V
●
15.1515.615.92V
●
●
2.7V
●
152538µA
0.5V
Timer Defeat Threshold at CHG1V
4006fa
3
LTC4006
ELECTRICAL CHARACTERISTICS
temperature range (Note 4), otherwise specifications are at T
The ● denotes specifications which apply over the full operating
= 25°C. V
A
DCIN
= 20V, V
= 12V unless otherwise noted.
BAT
SYMBOLPARAMETERCONDITIONSMINTYPMAXUNITS
Oscillator
f
f
DC
OSC
MIN
MAX
Regulator Switching Frequency255300345kHz
Regulator Switching Frequency in Drop OutDuty Cycle ≥ 98%2025kHz
Regulator Maximum Duty CycleV
CSP
= V
BAT
9899%
Gate Drivers (TGATE, BGATE)
V
High (V
TGATE
V
HighC
BGATE
V
Low (V
TGATE
V
LowI
BGATE
CLN
CLN
– V
– V
)I
TGATE
)C
TGATE
= –1mA50mV
TGATE
= 3000pF4.55.610V
LOAD
= 3000pF4.55.610V
LOAD
= 1mA50mV
BGATE
TGATE Transition Time
TGTR TGATE Rise TimeC
TGTF TGATE Fall TimeC
= 3000pF, 10% to 90%50110ns
LOAD
= 3000pF, 10% to 90%50100ns
LOAD
BGATE Transition Time
BGTR BGATE Rise TimeC
BGTF BGATE Fall TimeC
V
at Shutdown (V
TGATE
V
at ShutdownI
BGATE
CLN
– V
)I
TGATE
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: See Test Circuit
= 3000pF, 10% to 90%4090ns
LOAD
= 3000pF, 10% to 90%4080ns
LOAD
= –1µA, DCIN = 0V, CLN = 12V100mV
TGATE
= 1µA, DCIN = 0V, CLN = 12V100mV
BGATE
Note 3: Does not include tolerance of current sense resistor.
Note 4: The LTC4006E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
UW
TYPICAL PERFOR A CE CHARACTERISTICS
INFET Response Time to
Reverse Current
= 0
V
gs
= 0V
V
s
Id (REVERSE) OF
PFET (5A/DIV)
I
= 0A
d
TEST PERFORMED ON DEMOBOARD
= 15VDC
V
IN
CHARGER = ON
= <10mA
I
CHARGE
Vgs OF PFET (2V/DIV)
Vs OF PFET (5V/DIV)
1.25µs/DIV
LTC4006-2
INFET = 1/2 Si4925DY
4006 G01
V
vs I
OUT
OUT
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
OUTPUT VOLTAGE ERROR (%)
DCIN = 20V
–4.5
–5.0
= 12.6V
V
BAT
0 0.5 1.02.03.04.01.52.53.54.5
OUTPUT CURRENT (A)
4006 G02
PWM Frequency vs Duty Cycle
350
300
250
200
150
100
PWM FREQUENCY (kHz)
50
PROGRAMMED CURRENT = 10%
DCIN = 15V
DCIN = 20V
0
0 0.1 0.20.40.60.90.80.30.50.71.0
DCIN = 24V
DUTY CYCLE (V
OUT/VIN
)
4006 G03
4006fa
4
UW
TYPICAL PERFOR A CE CHARACTERISTICS
LTC4006
Disconnect/Reconnect Battery
(Load Dump)
3A STEP
V
FLOAT
1V/(DIV)
LOAD
STATE
LOAD CURRENT = 1A, 2A, 3A
DCIN = 20V
LTC4006-2
1A STEP
DISCONNECT
Efficiency at 19VDC V
100
LTC4006-4
95
90
1A STEP
3A STEP
RECONNECT
LTC4006-2
Battery Leakage Current vs
Battery Voltage
40
VDCIN = 0V
35
30
25
20
15
10
BATTERY LEAKAGE CURRENT (µA)
5
0
051015202530
4006 G04
BATTERY VOLTAGE (V)
4006 G05
LTC4006-2 Efficiency with
IN
15VDC V
100
95
90
IN
85
EFFICIENCY (%)
80
75
U
1.000.501.502.002.503.00
CHARGING CURRENT (A)
4006 G07
UU
PI FU CTIO S
DCIN (Pin 1): External DC Power Source Input. Bypass
this pin with at least 0.01µF. See Applications Information
section.
CHG (Pin 2): Open-Drain Charge Status Output. When the
battery is being charged, the CHG pin is pulled low by an
internal N-channel MOSFET. When the charge current
drops below 10% of programmed current, the N-channel
MOSFET turns off and a 25µA current source is connected
from the CHG pin to GND. When the timer runs out or the
input supply is removed, the current source will be discon-
85
EFFICIENCY (%)
80
75
1.000.501.502.002.503.00
CHARGING CURRENT (A)
4006 G08
nected and the CHG pin is forced into a high impedance
state. A pull-up resistor is required. The timer function is
defeated by forcing this pin below 1V (or connecting it to
GND).
ACP/SHDN (Pin 3): Open-Drain Output used to indicate if
the AC adapter voltage is adequate for charging. Active
high digital output. Internal 10µA pull-up to 3.5V. The
charger can also be inhibited by pulling this pin below 1V.
Reset the charger by pulsing the pin low for a minimum of
0.1µs.
4006fa
5
LTC4006
U
UU
PI FU CTIO S
(Pin 4): Timer Resistor. The timer period is set by
R
T
placing a resistor, R
The timer period is t
If this resistor is not present, the charger will not start.
GND (Pin 5): Ground for low power circuitry.
NTC (Pin 6): A thermistor network is connected from NTC
to GND. This pin determines if the battery temperature is
safe for charging. The charger and timer are suspended if
the thermistor indicates a temperature that is unsafe for
charging. The thermistor function may be disabled with a
300k to 500k resistor from DCIN to NTC.
I
(Pin 7): Control Signal of the Inner Loop of the Current
TH
Mode PWM. Higher I
charging currrent in normal operation. A 6.04k resistor, in
series with a capacitor of at least 0.1µF to GND, provides
loop compensation. Typical full-scale output current is
40µA. Nominal voltage range for this pin is 0V to 3V.
I
(Pin 8): Current Monitoring Output. The voltage at
MON
this pin provides a linear indication of charging current.
Peak current is equivalent to 1.19V. Zero current is approximately 0.309V. A capacitor from I
required to filter higher frequency components. If V
2.5V/cell, then V(I
depleted battery. Any current sourced or sinked from this
pin directly affects the charging current accuracy. If this
pin is to be monitored, a high impedance input buffer
should be used.
, to GND.
RT
= (1hour • RRT/154k)
TIMER
voltage corresponds to higher
TH
to ground is
MON
) = 1.19V when conditioning a
MON
BAT
<
CSP (Pin 9): Current Amplifier CA1 Input. This pin and the
BAT pin measure the voltage across the sense resistor,
R
, to provide the instantaneous current signals re-
SENSE
quired for both peak and average current mode operation.
BAT (Pin 10): Battery Sense Input and the Negative
Reference for the Current Sense Resistor. A precision
internal resistor divider sets the final float potential on this
pin. The resistor divider is disconnected during shutdown.
CLP (Pin 11): Positive Input to the Supply Current Limiting
Amplifier, CL1. The threshold is set at 100mV above the
voltage at the CLN pin. When used to limit supply current,
a filter is needed to filter out the switching noise. If no
current limit function is desired, connect this pin to CLN.
CLN (Pin 12): Negative Reference for the Input Current
Limit Amplifier, CL1. This pin also serves as the power
supply for the IC. A 10µF to 22µF bypass capacitor should
be connected as close as possible to this pin.
TGATE (Pin 13): Drives the top external P-channel MOSFET
of the battery charger buck converter.
PGND (Pin 14): High Current Ground Return for the BGATE
Driver.
BGATE (Pin 15): Drives the bottom external N-channel
MOSFET of the battery charger buck converter.
INFET (Pin 16): Drives the Gate of the External Input PFET.
TEST CIRCUIT
6
35mV
+
–
LTC4006
I
7
4006 TC
TH
0.6V
4006fa
11.67µA
+
–
3k
BAT
10
V
+
REF
EA
–
CSP
9
LT1055
BLOCK DIAGRA
V
IN
DCIN
0.1µF
Q3
5.1k
R
15nF
CL
INFET
ACP/SHDN
GND
CLP
CLN
20µF
1
16
3
5
11
12
–
100mV
+
W
5.8V
CL1
OSCILLATOR
WATCH DOG
DETECT t
DCIN
OFF
g
= 1.5m
m
1.19V
Ω
708mV
1.28V
1.105V
LTC4006
25µA
CLN
RESTART
LOBAT
TIMER/CONTROLLER
35mV
I
CL
T
BAD
C/10
OSCILLATOR
THERMISTOR
397mV
–
11.67µA
+
+
EA
Ω
= 1m
g
m
CA1
3k
–
3k
+
–
9k
Ω
g
= 1m
m
OV
÷ 5
BUFFERED I
CA2
–
1.19V
+
TH
2
4
6
10
9
7
CHG
R
T
NTC
BAT
CSP
I
TH
6.04k
0.12µF
100k
R
32.4k
0.47µF
R
SENSE
V
LOGIC
RT
10k
NTC
20µF
TGATE
BGATE
PGND
13
15
14
PWM
LOGIC
Q1
Q2
L1
Q
CHARGE
I
REV
S
R
I
CMP
+
+
–
–
–
17mV
+
R
26.44k
R
52.87k
IMON1
IMON2
I
MON
8
4.7nF
4006 BD
4006fa
7
LTC4006
OPERATIO
U
Overview
The LTC4006 is a synchronous current mode PWM stepdown (buck) switcher battery charger controller. The charge
current is programmed by the sense resistor (R
SENSE
)
between the CSP and BAT pins. The final float voltage is
internally programmed to 8.4V (LTC4006-6), 12.6V
(LTC4006-2) or 16.8V (LTC4006-4) with better than ±0.8%
accuracy. Charging begins when the potential at the DCIN
pin rises above the voltage at CLN (and the UVLO voltage)
and the ACP/SHDN pin is allowed to go high; the CHG pin
is set low. At the beginning of the charge cycle, if the cell
voltage is below 2.5V, the charger will trickle charge the
battery with 10% of the maximum programmed current.
If the cell voltage stays below 2.5V for 25% of the total
charge time, the charge sequence will be terminated immediately and the CHG pin will be set to a high impedance.
An external thermistor network is sampled at regular
intervals. If the thermistor value exceeds design limits,
charging is suspended. If the thermistor value returns to
an acceptable value, charging resumes. An external resistor on the R
pin sets the total charge time. The timer can
T
be defeated by forcing the CHG pin to a low voltage.
As the battery approaches the final float voltage, the charge
current will begin to decrease. When the current drops to
10% of the programmed charge current, an internal C/10
comparator will indicate this condition by sinking 25µA at the
CHG pin. The charge timer is also reset to 25% of the total
charge time. If this condition is caused by an input current
limit condition, described below, then the C/10 comparator
will be inhibited. When a time-out occurs, charging is terminated immediately and the CHG pin changes to a high
impedance. The charger will automatically restart if the cell
voltage is less than 3.9V. To restart the charge cycle manually, simply remove the input voltage and reapply it, or force
the ACP/SHDN pin low momentarily. When the input voltage
is not present, the charger goes into a sleep mode, dropping
battery current drain to 15µA. This greatly reduces the current
drain on the battery and increases the standby time. The
charger can be inhibited at any time by forcing the ACP/SHDN
pin to a low voltage.
Input FET
The input FET circuit performs two functions. It enables
the charger if the input voltage is higher than the CLN pin
and provides the logic indicator of AC present on the
ACP/SHDN pin. It controls the gate of the input FET to keep
a low forward voltage drop when charging and also
prevents reverse current flow through the input FET.
If the input voltage is less than V
170mV higher than V
to activate the charger. When this
CLN
, it must go at least
CLN
occurs the ACP/SHDN pin is released and pulled up with
an internal load to indicate that the adapter is present. The
gate of the input FET is driven to a voltage sufficient to keep
a low forward voltage drop from drain to source. If the
voltage between DCIN and CLN drops to less than 25mV,
the input FET is turned off slowly. If the voltage between
DCIN and CLN is ever less than – 25mV, then the input FET
is turned off in less than 10µs to prevent significant
reverse current from flowing in the input FET. In this
condition, the ACP/SHDN pin is driven low and the charger
is disabled.
Battery Charger Controller
The LTC4006 charger controller uses a constant off-time,
current mode step-down architecture. During normal operation, the top MOSFET is turned on each cycle when the
oscillator sets the SR latch and turned off when the main
current comparator I
resets the SR latch. While the top
CMP
MOSFET is off, the bottom MOSFET is turned on until either
the inductor current trips the current comparator I
REV
or the
beginning of the next cycle. The oscillator uses the equation:
VV
–
t
OFF
DCINBAT
=
Vf
•
DCINOSC
to set the bottom MOSFET on time. This activity is diagrammed in Figure 1.
The peak inductor current, at which I
resets the SR latch,
CMP
is controlled by the voltage on ITH. ITH is in turn controlled by
several loops, depending upon the situation at hand. The
average current control loop converts the voltage between
CSP and BAT to a representative current. Error amp CA2
Shut Down by Undervoltage Lockout>BAT<UVLOFFHIGHResetHIGH**
Timer Defeated Until V
*Open Drain. High when used with pull-up resistor.
**Most probable condition, X = Don’t care
> 3.9V/Cell>BAT2.5V ≤ V
BAT
and <UVL
FLOAT
FLOAT
**OFFHIGH>T StoppedHIGH
FLOAT
≤3.9VProgrammedHIGHRunningLOW
BAT
(V/Cell)Current
Note 1: If a depleted battery is inserted while the charger is in this state,
the charger must be reset to initiate charging.
Current
Current
(Faulted)
(Faulted)
OFFHIGH<T/4 After C/1025µA
Comparator Trip.
Running
OFFHIGH>T/4 After C/10HIGH
Stoppedfor Restart)
(Waiting
for Restart)
compares this current against the desired current programmed
by R
IMON
V
R
IMON
REF
at the I
VVAk
=
pin and adjusts ITH until:
MON
–.•11 673
CSPBAT
+µΩ
k
Ω
3
therefore,
I
CHARGE
⎛
V
REF
=µ
⎜
⎝
R
–.•11 67
IMONSENSE
⎞
A
⎟
⎠
Ω
3
k
R
The voltage at BAT is divided down by an internal resistor
divider and is used by error amp EA to decrease ITH if the
divider voltage is above the 1.19V reference. When the
charging current begins to decrease, the voltage at I
will decrease in direct proportion. The voltage at I
MON
MON
is
then given by:
R
VI RAk
=+µΩ
IMONCHARGESENSE
()
•.••11 673
IMON
k
Ω
3
The accuracy of V
V
is plotted in Figure 2.
IMON
will range from 0% to I
IMON
TOL
.
The amplifier CL1 monitors and limits the input current to
a preset level (100mV/R
decrease the I
voltage, thereby reducing charging cur-
TH
). At input current limit, CL1 will
CL
rent. When this condition is detected, the C/10 indicator will
(V)
IMON
V
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.309V
20406080100
I
(% OF MAXIMUM CURRENT)
CHARGE
Figure 2. V
IMON
1.19V
vs I
4006 F02
CHARGE
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9
LTC4006
MASTER
SHUTDOWN
1
2
ANY
SHUTDOWN
4
CONDITION
11
13
3, 18, 19,
20, 21, 22
3, 8,
9, 10
5,
6,
7
CHARGE
12, 14, 15, 16, 17
4006 F15
U
OPERATIO
Table 2. Truth Table for LTC4006 Operation (Supplemental)
17CHARGECHARGEInput Current Limited Charging>BAT>2.5V/Cell<ProgrammedHIGH
18CHARGESDCharger Paused Due to Thermistor Out of Range >BAT>2.5V/CellOFFHIGHPausedLOW or 25µA
19CHARGESDShut Down by ACP/SHDN Pin>BAT>2.5V/Cell0OFFForced LOWResetHIGH
20CHARGESDTerminated by Low-Battery Fault (Note 1)>BAT<2.5V/Cell0OFFHIGH>T/4 then ResetHIGH
21CHARGESDTerminates After 1/4 T>BATV
22CHARGESDTerminates After T>BATV
Functional)Current
Functional)Current
≤ 3.9V0ProgrammedHIGHReset
BAT
(V/Cell)Current
Than 10% of Programmed CurrentCurrent
FLOAT
**0OFFHIGH>T/4 then ResetHIGH
FLOAT
1OFFHIGH>T/4 then ResetHIGH
Current
Current (Note 2)
Current
Current
Current
Current
Current (Note 2)
LTC4006: State Diagram (Supplemental)
(Faulted)
(Faulted)
(Faulted)
(Faulted)
10
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OPERATIO
LTC4006
U
be inhibited if it is not already active. If the charging current
decreases below 10% to 15% of programmed current,
while engaged in input current limiting, BGATE will be
forced low to prevent the charger from discharging the
battery. Audible noise can occur in this mode of operation.
An overvoltage comparator guards against voltage transient overshoots (>7% of programmed value). In this
case, both MOSFETs are turned off until the overvoltage
condition is cleared. This feature is useful for batteries
which “load dump” themselves by opening their protection switch to perform functions such as calibration or
pulse mode charging.
As the voltage at BAT increases to near the input voltage
at DCIN, the converter will attempt to turn on the top
MOSFET continuously (“dropout’’). A watchdog timer
detects this condition and forces the top MOSFET to turn
off for about 300ns at 40µs intervals. This is done to
prevent audible noise when using ceramic capacitors at
the input and output.
Charger Startup
When the charger is enabled, it will not begin switching
until the I
voltage exceeds a threshold that assures initial
TH
current will be positive. This threshold is 5% to 15% of the
maximum programmed current. After the charger begins
switching, the various loops will control the current at a
level that is higher or lower than the initial current. The
duration of this transient condition depends upon the loop
compensation but is typically less than 100µs.
Thermistor Detection
The thermistor detection circuit is shown in Figure 3. It requires
an external resistor and capacitor in order to function properly.
The thermistor detector performs a sample-and-hold function. An internal clock, whose frequency is determined by
the timing resistor connected to R
, keeps switch S1
T
closed to sample the thermistor:
t
SAMPLE
for R
= 127.5 • 20 • RRT • 17.5pF = 13.8ms,
= 309k
RT
The external RC network is driven to approximately 4.5V
and settles to a final value across the thermistor of:
.•
VR
TH
TH
+459
V
()
RTH FINAL
=
RR
R
10k
NTC
LTC4006
R9
32.4k
NTC
TH
C7
0.47µF
6
S1
DCQ
Figure 3
–
~4.5V
+
+
–
–
+
60k
45k
15k
4006 F03
CLK
T
BAD
This voltage is stored by C7. Then the switch is opened for a
short period of time to read the voltage across the thermistor.
= 10 • R
t
HOLD
for R
RT
When the t
= 309k
HOLD
• 17.5pF = 54µs,
RT
interval ends the result of the thermistor
testing is stored in the D flip-flop (DFF). If the voltage at
NTC is within the limits provided by the resistor divider
feeding the comparators, then the NOR gate output will be
low and the DFF will set T
to zero and charging will
BAD
continue. If the voltage at NTC is outside of the resistor
divider limits, then the DFF will set T
to one, the charger
BAD
will be shut down, and the timer will be suspended until
T
returns to zero (see Figure 4).
BAD
CLK
(NOT TO
SCALE)
VOLTAGE ACROSS THERMISTOR
V
NTC
Figure 4
t
SAMPLE
t
HOLD
COMPARATOR HIGH LIMIT
COMPARATOR LOW LIMIT
4006 F04
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LTC4006
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APPLICATIO S I FOR ATIO
Charger Current Programming
The basic formula for charging current is:
mV
I
CHARGE MAX
()
Table 3. Recommended R
I
(A)R
MAX
1.00.1000.25
2.00.0500.25
3.00.0330.5
4.00.0250.5
=
100
R
SENSE
Resistor Values
SENSE
(Ω) 1%R
SENSE
SENSE
(W)
Setting the Timer Resistor
The charger termination timer is designed for a range of 1
hour to 3 hours with a ±15% uncertainty. The timer is
programmed by the resistor R
using the following
RT
equation:
t
TIMER
= 10 • 2
27
• R
• 17.5pF (Refer to Figure 5)
RT
(seconds)
It is important to keep the parasitic capacitance on the R
T
pin to a minimum. The trace connecting RT to RRT should
be as short as possible.
Alternatively, a normally closed switch can be used to
detect when the battery is present (see Figure 8).
200
180
160
140
120
100
(MINUTES)
80
TIMER
t
60
40
20
0
100
150250
LTC4006
200
Figure 5. t
CHG
2
300
RRT (kΩ)
3.3V
200k
350
TIMER
33k
Figure 6. Microprocessor Interface
400
vs R
RT
OUT
IN
450
V
µP
500
4006 F05
DD
4006 F06
CHG Status Output Pin
When the charge cycle starts, the CHG pin is pulled down
to ground by an internal N-channel MOSFET that can drive
more than 100µA. When the charge current drops to 10%
of the full-scale current (C/10), the N-channel MOSFET is
turned off and a weak 25µA current source to ground is
connected to the CHG pin. After a time out occurs, the pin
will go into a high impedance state. By using two different
value pull-up resistors, a microprocessor can detect three
states from this pin (charging, C/10 and stop charging).
See Figure 6.
Battery Detection
It is generally not good practice to connect a battery while
the charger is running. The timer is in an unknown state
and the charger could provide a large surge current into
the battery for a brief time. The circuit shown in Figure 7
keeps the charger shut down and the timer reset while a
battery is not connected.
ADAPTER
POWER
SWITCH CLOSED IF
BATTERY CONNECTED
ADAPTER
POWER
SWITCH OPEN WHEN
BATTERY CONNECTED
470k
Figure 7
Figure 8
DCIN
1
ACP/SHDN
3
DCIN
1
ACP/SHDN
3
LTC4006
LTC4006
4006 F07
4006 F08
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APPLICATIO S I FOR ATIO
LTC4006
Soft-Start
The LTC4006 is soft started by the 0.12µF capacitor on the
I
pin. On start-up, ITH pin voltage will rise quickly to 0.5V,
TH
then ramp up at a rate set by the internal 40µA pull-up
current and the external capacitor. Battery charging
current starts ramping up when ITH voltage reaches 0.8V
and full current is achieved with I
at 2V. With a 0.12µF
TH
capacitor, time to reach full charge current is about 2ms
and it is assumed that input voltage to the charger will
reach full value in less than 2ms. The capacitor can be
increased up to 1µF if longer input start-up times are
needed.
Input and Output Capacitors
The input capacitor (C2) is assumed to absorb all input
switching ripple current in the converter, so it must have
adequate ripple current rating. Worst-case RMS ripple
current will be equal to one half of output charging current.
Actual capacitance value is not critical. Solid tantalum low
ESR capacitors have high ripple current rating in a relatively small surface mount package,
but caution must be
used when tantalum capacitors are used for input or
output bypass
. High input surge currents can be created
when the adapter is hot-plugged to the charger or when a
battery is connected to the charger. Solid tantalum capacitors have a known failure mechanism when subjected to
very high turn-on surge currents. Only Kemet T495 series
of “Surge Robust” low ESR tantalums are rated for high
surge conditions such as battery to ground.
I
RMS
V
BAT
Lf
()()
⎛
⎜
⎝
1
0291
.–
()
=
V
V
DCIN
BAT
⎞
⎟
⎠
For example:
= 19V, V
V
DCIN
f = 300kHz, I
= 12.6V, L1 = 10µH, and
BAT
= 0.41A.
RMS
EMI considerations usually make it desirable to minimize
ripple current in the battery leads, and beads or inductors
may be added to increase battery impedance at the 300kHz
switching frequency. Switching ripple current splits between the battery and the output capacitor depending on
the ESR of the output capacitor and the battery impedance.
If the ESR of C3
is 0.2Ω and the battery impedance is
raised to 4Ω with a bead or inductor, only 5% of the
current ripple will flow in the battery.
Inductor Selection
Higher operating frequencies allow the use of smaller
inductor and capacitor values. A higher frequency generally results in lower efficiency because of MOSFET gate
charge losses. In addition, the effect of inductor value on
ripple current and low current operation must also be
considered. The inductor ripple current ∆I
with higher frequency and increases with higher V
I
∆=
LOUT
1
fL
()( )
⎛
V
1–
⎜
⎝
V
OUT
V
IN
⎞
⎟
⎠
decreases
L
.
IN
The relatively high ESR of an aluminum electrolytic for C1,
located at the AC adapter input terminal, is helpful in
reducing ringing during the hot-plug event. Refer to Application Note 88 for more information.
Highest possible voltage rating on the capacitor will minimize problems. Consult with the manufacturer before use.
Alternatives include new high capacity ceramic (at least
20µF) from Tokin, United Chemi-Con/Marcon, et al. Other
alternative capacitors include OS-CON capacitors from
Sanyo.
The output capacitor (C3) is also assumed to absorb
output switching current ripple. The general formula for
capacitor current is:
Accepting larger values of ∆IL allows the use of low
inductances, but results in higher output voltage ripple
and greater core losses. A reasonable starting point for
setting ripple current is ∆IL = 0.4(I
∆I
exceed 0.6(I
L
) due to limits imposed by I
MAX
CA1. Remember the maximum ∆I
). In no case should
MAX
REV
occurs at the maxi-
L
and
mum input voltage. In practice 10µH is the lowest value
recommended for use.
Lower charger currents generally call for larger inductor
values. Use Table 4 as a guide for selecting the correct
inductor value for your application.
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APPLICATIO S I FOR ATIO
Table 4
MAXIMUMINPUTMINIMUM INDUCTOR
AVERAGE CURRENT (A)VOLTAGE (V)VALUE (µH)
1≤2040 ±20%
1> 2056 ± 20%
2≤2020 ±20%
2> 2030 ± 20%
3≤2015 ±20%
3> 2020 ± 20%
4≤2010 ±20%
4> 2015 ± 20%
Charger Switching Power MOSFET
and Diode Selection
Two external power MOSFETs must be selected for use
with the charger: a P-channel MOSFET for the top (main)
switch and an N-channel MOSFET for the bottom (synchronous) switch.
The peak-to-peak gate drive levels are set internally. This
voltage is typically 6V. Consequently, logic-level threshold
MOSFETs must be used. Pay close attention to the BV
DSS
specification for the MOSFETs as well; many of the logic
level MOSFETs are limited to 30V or less.
Selection criteria for the power MOSFETs include the “ON”
resistance R
transfer capacitance C
, total gate capacitance QG, reverse
DS(ON)
, input voltage and maximum
RSS
output current. The charger is operating in continuous
mode at moderate to high currents so the duty cycles for
the top and bottom MOSFETs are given by:
Main Switch Duty Cycle = V
Synchronous Switch Duty Cycle = (VIN – V
OUT/VIN
OUT
)/VIN.
The MOSFET power dissipations at maximum output
current are given by:
PMAIN = V
OUT/VIN
+ k(V
PSYNC = (VIN – V
Where δ is the temperature dependency of R
2
(I
)(1 + δ∆T)R
MAX
2
)(I
)(C
IN
MAX
OUT
)/VIN(I
RSS
2
MAX
DS(ON)
)(f
)
OSC
)(1 + δ∆T)R
DS(ON)
DS(ON)
and k
is a constant inversely related to the gate drive current.
Both MOSFETs have I
2
R losses while the PMAIN equation
includes an additional term for transition losses, which are
highest at high input voltages. For V
< 20V the high
IN
current efficiency generally improves with larger MOSFETs,
while for V
to the point that the use of a higher R
lower C
> 20V the transition losses rapidly increase
IN
device with
DS(ON)
actually provides higher efficiency. The syn-
RSS
chronous MOSFET losses are greatest at high input voltage or during a short circuit when the duty cycle in this
switch is nearly 100%. The term (1 + δ∆T) is generally
given for a MOSFET in the form of a normalized R
DS(ON)
vs
temperature curve, but δ = 0.005/°C can be used as an
approximation for low voltage MOSFETs. C
specified in the MOSFET characteristics; if not, then C
can be calculated using C
= QGD/∆VDS. The constant
RSS
is usually
RSS
RSS
k = 2 can be used to estimate the contributions of the two
terms in the main switch dissipation equation.
If the charger is to operate in low dropout mode or with a
high duty cycle greater than 85%, then the topside
P-channel efficiency generally improves with a larger
MOSFET. Using asymmetrical MOSFETs may achieve cost
savings or efficiency gains.
The Schottky diode D1, shown in the Typical Application
on the back page, conducts during the dead-time between
the conduction of the two power MOSFETs. This prevents
the body diode of the bottom MOSFET from turning on and
storing charge during the dead-time, which could cost as
much as 1% in efficiency. A 1A Schottky is generally a
good size for 4A regulators due to the relatively small
average current. Larger diodes can result in additional
transition losses due to their larger junction capacitance.
The diode may be omitted if the efficiency loss can be
tolerated.
Calculating IC Power Dissipation
The power dissipation of the LTC4006 is dependent upon
the gate charge of the top and bottom MOSFETs (Q
respectively). The gate charge is determined from the
Q
G2
G1
and
manufacturer’s data sheet and is dependent upon both the
gate voltage swing and the drain voltage swing of the
MOSFET. Use 6V for the gate voltage swing and V
DCIN
for
the drain voltage swing.
PD = V
DCIN
• (f
(QG1 + QG2) + I
OSC
DCIN
)
14
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APPLICATIO S I FOR ATIO
LTC4006
Example:
V
DCIN
= 19V, f
= 345kHz, QG1 = QG2 = 15nC.
OSC
PD = 292mW
= 5mA
I
DCIN
Adapter Limiting
An important feature of the LTC4006 is the ability to
automatically adjust charging current to a level which
avoids overloading the wall adapter. This allows the product to operate at the same time that batteries are being
charged without complex load management algorithms.
Additionally, batteries will automatically be charged at the
maximum possible rate of which the adapter is capable.
This feature is created by sensing total adapter output
current and adjusting charging current downward if a
preset adapter current limit is exceeded. True analog
control is used, with closed-loop feedback ensuring that
adapter load current remains within limits. Amplifier CL1
in Figure 9 senses the voltage across R
LTC4006
=
*R
CL
ADAPTER CURRENT LIMIT
100mV
–
CL1
+
100mV
Figure 9. Adapter Current Limiting
CLP
+
11
12
CLN
15nF
+
C
IN
5k
RCL*
TO SYSTEM
LOAD
CL
AC ADAPTER
, connected
INPUT
V
IN
4006 F09
between the CLP and DCIN pins. When this voltage exceeds 100mV, the amplifier will override programmed
charging current to limit adapter current to 100mV/R
CL
. A
lowpass filter formed by 5kΩ and 15nF is required to
eliminate switching noise. If the current limit is not used,
CLP should be connected to CLN.
Setting Input Current Limit
To set the input current limit, you need to know the
minimum wall adapter current rating. Subtract 7% for the
input current limit tolerance and use that current to determine the resistor value.
R
= 100mV/I
CL
I
= Adapter Min Current –
LIM
LIM
(Adapter Min Current • 7%)
As is often the case, the wall adapter will usually have at
least a +10% current limit margin and many times one can
simply set the adapter current limit value to the actual
adapter rating (see Figure 9).
Designing the Thermistor Network
There are several networks that will yield the desired
function of voltage vs temperature needed for proper
operation of the thermistor. The simplest of these is the
voltage divider shown in Figure 10. Unfortunately, since
the HIGH/LOW comparator thresholds are fixed internally,
there is only one thermistor type that can be used in this
network; the thermistor must have a HIGH/LOW resistance ratio of 1:7. If this happy circumstance is true for
* Rounded to nearest 5% standard step value. Many non-standard values are popular.
CL
RCL POWERRCL POWER
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LTC4006
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APPLICATIO S I FOR ATIO
LTC4006
NTC
Figure 10. Voltage Divider Thermistor NetworkFigure 11. General Thermistor Network
you, then simply set R9 = R
6
R9
TH(LOW)
C7R
4006 F10
TH
If you are using a thermistor that doesn’t have a 1:7 HIGH/
LOW ratio, or you wish to set the HIGH/LOW limits to
different temperatures, then the more generic network in
Figure 11 should work.
Once the thermistor, R
, has been selected and the
TH
thermistor value is known at the temperature limits, then
resistors R9 and R9A are given by:
During the hold interval, C7 must hold the voltage across
the thermistor relatively constant to avoid false readings.
A reasonable amount of ripple on NTC during the hold
interval is about 10mV to 15mV. Therefore, the value of C7
is given by:
C7 = t
= 10 • R
/(R9/7 • –ln(1 – 8 • 15mV/4.5V))
HOLD
• 17.5pF/(R9/7 • –ln(1 – 8 • 15mV/4.5V)
RT
Example:
R9 = 24.3k
= 309k (~2 hour timer)
R
RT
C7 = 0.57µF → 0.56µF (nearest value)
Disabling the Thermistor Function
If the thermistor is not needed, connecting a resistor
between DCIN and NTC will disable it. The resistor should
be sized to provide at least 10µA with the minimum voltage
applied to DCIN and 10V at NTC. Do not exceed 30µA into
NTC. Generally, a 301k resistor will work for DCIN less
than 15V. A 499k resistor is recommended for DCIN
between 15V and 24V.
It is NOT recommended that one permit battery current to
flow backwards through R
TGATE MOSFET internal diode to reach V
MOSFET is off when VIN < V
, inductor and out the
SENSE
. The TGATE
OUT
. Figure 12 shows an op-
BAT
tional high efficiency discharge path for the battery such that
V
power comes from lossless “diode or” of VIN and V
OUT
Normally when VIN > V
, P-channel MOSFET Q1B VGS =
BAT
BAT
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.
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4006 F13
V
BAT
L1
V
IN
HIGH
FREQUENCY
CIRCULATING
PATH
BAT
SWITCH NODE
C2
C3
D1
APPLICATIO S I FOR ATIO
LTC4006
TGATE
100k
INDUCTORR
ZENER
18V
SENSE
4006 F12
Q1B
V
OUT
V
BAT
V
IN
Q1A
Figure 12. Optional Simple High
Efficiency Battery Discharge Path
0V keeping Q1B in the off state while P-channel MOSFET
Q1A is on. If V
were to suddenly go away, Q1B internal
IN
diode will provide a passive but instant discharge path for
battery current to reach V
and hold up the load. Q1B
OUT
internal diode has the same current rating as the FET itself,
but has a very high V
quickly build up in Q1B if left alone. However as V
falls below V
BAT
of about a volt such that heat will
f
’s voltage
IN
by Q1B’s VGS threshold, Q1B will then turn
on shorting out its internal diode removing both the heat
and voltage losses created by the diode. When V
falls to
IN
zero volts, Q1B gate will be driven to the same voltage as
providing the lowest possible RDSON value. A zener
V
BAT
diode along with a 100k resistor in series with the Q1B gate
protects the gate from any hazardous voltage spikes that
can exceed Q1B maximum permissible VGS voltage. The
zener voltage rating must be less than Q1B V
age but greater than V
BAT
.
GS(MAX)
volt-
Since Q1A and Q1B are always at opposite states and share
the same load, it is often advantagous to combine both FETs
into a single package and save PCB space. The P
rate of
D
the FET that is on is enhanced when the other FET is off. The
choice of a combined Q1 should take into account the highest load current conditions of both paths and choose
whichever is greater as the driving force behind the MOSFET
selection. If the V
supply is going to collapse very slowly
IN
such that Q1B is not turned on quickly enough for the given
load and stay within its P
limits, you should install a suit-
D
able Schottky diode in parallel with Q1B.
PCB Layout Considerations
For maximum efficiency, the switch node rise and fall times
should be minimized. To prevent magnetic and electrical
field radiation and high frequency resonant problems,
proper layout of the components connected to the IC is
essential. (See Figure 13.) Here is a PCB layout priority list
for proper layout. Layout the PCB using this specific order.
1.Input capacitors need to be placed as close as possible
to switching FET’s supply and ground connections.
Shortest copper trace connections possible. These
parts must be on the same layer of copper. Vias must
not be used to make this connection.
2.The control IC needs to be close to the switching FET’s
gate terminals. Keep the gate drive signals short for a
clean FET drive. This includes IC supply pins that connect to the switching FET source pins. The IC can be
placed on the opposite side of the PCB relative to above.
3.Place inductor input as close as possible to switching
FET’s output connection. Minimize the surface area of
this trace. Make the trace width the minimum amount
needed to support current—no copper fills or pours.
Avoid running the connection using multiple layers in
parallel. Minimize capacitance from this node to any
other trace or plane.
Figure 13. High Speed Switching Path
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APPLICATIO S I FOR ATIO
4.Place the output current sense resistor right next to
the inductor output but oriented such that the IC’s
current sense feedback traces going to resistor are not
long. The feedback traces need to be routed together
as a single pair on the same layer at any given time with
smallest trace spacing possible. Locate any filter
component on these traces next to the IC and not at the
sense resistor location.
5.Place output capacitors next to the sense resistor
output and ground.
6.Output capacitor ground connections need to feed
into same copper that connects to the input capacitor
ground before tying back into system ground.
General Rules
7.Connection of switching ground to system ground or
internal ground plane should be single point. If the
system has an internal system ground plane, a good
way to do this is to cluster vias into a single star point
to make the connection.
8.Route analog ground as a trace tied back to IC ground
(analog ground pin if present) before connecting to
any other ground. Avoid using the system ground
plane. CAD trick: make analog ground a separate
ground net and use a 0Ω resistor to tie analog ground
to system ground.
9.A good rule of thumb for via count for a given high
current path is to use 0.5A per via. Be consistent.
10. If possible, place all the parts listed above on the same
PCB layer.
11. Copper fills or pours are good for all power connections except as noted above in Rule 3. You can also use
copper planes on multiple layers in parallel too—this
helps with thermal management and lower trace inductance improving EMI performance further.
12. For best current programming accuracy provide a
Kelvin connection from R
to CSP and BAT. See
SENSE
Figure 13 as an example.
It is important to keep the parasitic capacitance on the RT,
CSP and BAT pins to a minimum. The traces connecting
these pins to their respective resistors should be as short
as possible.
DIRECTION OF CHARGING CURRENT
R
SNS
4006 F14
CSP
Figure 14. Kelvin Sensing of Charging Current
BAT
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18
PACKAGE DESCRIPTION
LTC4006
U
GN Package
16-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.045
±
.005
.254 MIN
±
.0015
RECOMMENDED SOLDER PAD LAYOUT
.007 – .0098
(0.178 – 0.249)
.016 – .050
NOTE:
1. CONTROLLING DIMENSION: INCHES
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
(0.406 – 1.270)
INCHES
(MILLIMETERS)
.150 – .165
.0250 BSC.0165
.015 ± .004
(0.38
0° – 8° TYP
± 0.10)
.189 – .196*
(4.801 – 4.978)
16
15
.229 – .244
(5.817 – 6.198)
12
×
45
°
.0532 – .0688
(1.35 – 1.75)
.008 – .012
(0.203 – 0.305)
TYP
12 11 10
14
13
4
3
5
9
678
(0.102 – 0.249)
.0250
(0.635)
BSC
.009
(0.229)
REF
.150 – .157**
(3.810 – 3.988)
.004 – .0098
GN16 (SSOP) 0204
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
4006fa
19
LTC4006
TYPICAL APPLICATIO
U
2A Li-Ion Battery Charger
Q3
INPUT SWITCH
16
11
12
13
15
14
9
10
R1
5k
C4
15nF
R
CL
0.04Ω
Q1
Q2
TO SYSTEM LOAD
C2
20µF
22µH 2A
D1
L1
D1: MBRM140T3
Q1, Q2: Si7501DN
Q3: Si5435B
R
SENSE
0.05Ω
4006 TA02
C3
20µF
BATTERY
CURRENT MONITOR
THERMISTOR
10k
NTC
DCIN
0V TO 20V
2.5A
V
LOGIC
CHG
ACP
CHARGING
0.0047µF
C7
0.47µF
C5
R9 32.4k
309k
TIMING
RESISTOR
(~2 HOURS)
C1
0.1µF
R3
100k
R
T
6.04k
C6
0.12µF
1
DCIN
2
CHG
3
ACP/SHDN
8
I
MON
6
NTC
4
R
T
7
I
R4
TH
5
GND
LTC4006
INFET
CLP
CLN
TGATE
BGATE
PGND
CSP
BAT
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