LINEAR TECHNOLOGY LT6200, LT6200-5 Technical data

查询LT6200供应商

FEATURES

■

Low Noise Voltage: 0.95nV/√Hz (100kHz)

■

Gain Bandwidth Product:

LT6200/LT6201 165MHz AV = 1
LT6200-5 800MHz AV ≥ 5
LT6200-10 1.6GHz AV ≥ 10

■

Low Distortion: –80dB at 1MHz, RL = 100Ω

■

Dual LT6201 in Tiny DFN Package

■

Input Common Mode Range Includes Both Rails

■

Output Swings Rail-to-Rail

■

Low Offset Voltage: 1mV Max

■

Wide Supply Range: 2.5V to 12.6V

■

Output Current: 60mA Min

■

SOT-23 and SO-8 Packages

■

Operating Temperature Range –40°C to 85°C

■

Power Shutdown, Thermal Shutdown

U

APPLICATIO S

■

Transimpedance Amplifiers

■

Low Noise Signal Processing

■

Active Filters

■

Rail-to-Rail Buffer Amplifiers

■

Driving A/D Converters

LT6200/LT6200-5

LT6200-10/LT6201

165MHz, Rail-to-Rail Input

and Output, 0.95nV/√Hz

Low Noise, Op Amp Family

U

DESCRIPTIO

The LT®6200/LT6201 are single and dual ultralow noise,
rail-to-rail input and output unity gain stable op amps that
feature 0.95nV/√Hz noise voltage. These amplifiers com­bine very low noise with a 165MHz gain bandwidth,
50V/µs slew rate and are optimized for low voltage signal
conditioning systems. A shutdown pin reduces supply
current during standby conditions and thermal shutdown
protects the part from overload conditions.

The LT6200-5/LT6200-10 are single amplifiers optimized
for higher gain applications resulting in higher gain band­width and slew rate. The LT6200 family maintains its
performance for supplies from 2.5V to 12.6V and are
specified at 3V, 5V and ±5V.

For compact layouts the LT6200/LT6200-5/LT6200-10 are
available in the 6-lead ThinSOTTM and the 8-pin SO pack­age. The dual LT6201 is available in an 8-pin SO package
with standard pinouts as well as a tiny, dual fine pitch
leadless package (DFN). These amplifiers can be used as
plug-in replacements for many high speed op amps to
improve input/output range and noise performance.

, LTC and LT are registered trademarks of Linear Technology Corporation.

ThinSOT is a trademark of Linear Technology Corporation.

TYPICAL APPLICATIO

Single Supply, 1.5nV/√Hz, Photodiode Amplifier

5V

I

PD

PHOTO

DIODE

PHILIPS
BF862

1k

10k

10k

U

–

+

LT6200

C

R

0.1µF

Distortion vs Frequency

–50

AV = 1

= 2V

V

O

F

F

V

≈ 2V

OUT

+I

• R

PD

F

6200 TA01

–60

–70

–80

–90

DISTORTION (dBc)

–100

–110

100k

P-P

VS = ±2.5V

HD2, RL = 1k

HD2, RL = 100Ω

HD3, RL = 1k

HD3, RL = 100Ω

1M 10M

FREQUENCY (Hz)

6200 G35

62001fa

1

LT6200/LT6200-5
LT6200-10/LT6201

WW

W

ABSOLUTE AXI U RATI GS

U

(Note 1)

Total Supply Voltage (V+ to V–) ............................ 12.6V

Total Supply Voltage (V+ to V–) (LT6201DD) ............. 7V

Input Current (Note 2) ........................................ ±40mA

Output Short-Circuit Duration (Note 3)............ Indefinite

Pin Current While Exceeding Supplies

(Note 12) ............................................................ ±30mA

Operating Temperature Range (Note 4) ...–40°C to 85°C

UUW

PACKAGE/ORDER I FOR ATIO

ORDER PART

NUMBER

LT6200CS6
LT6200IS6

TOP VIEW

OUT 1

–

V

2

+IN 3

S6 PACKAGE

6-LEAD PLASTIC SOT-23

T

= 150°C, θJA = 160°C/W (Note 10)

JMAX

+

6 V
5 SHDN
4 –IN

LT6200CS6-5
LT6200IS6-5
LT6200CS6-10
LT6200IS6-10

S6 PART

MARKING*

LTJZ
LTACB
LTACC

Specified Temperature Range (Note 5)....–40°C to 85°C

Junction Temperature........................................... 150°C

Junction Temperature (DD Package) ................... 125°C

Storage Temperature Range ..................–65°C to 150°C

Storage Temperature Range

(DD Package) ...................................... – 65°C to 125°C

Lead Temperature (Soldering, 10 sec).................. 300°C

ORDER PART

NUMBER

LT6200CS8
LT6200IS8

SHDN

–IN

+IN

TOP VIEW

1

2

–
+

3

–

4

V

NC

8

+

V

7

OUT

6

NC

5

LT6200CS8-5
LT6200IS8-5
LT6200CS8-10
LT6200IS8-10

S8 PART

S8 PACKAGE

8-LEAD PLASTIC SO

T

= 150°C, θJA = 100°C/W

JMAX

MARKING

6200
6200I
62005
6200I5
620010
200I10

TOP VIEW

+

V

1OUT A

–IN A

2

+IN A

8-LEAD (3mm × 3mm) PLASTIC DFN

T
UNDERSIDE METAL CONNECTED TO V

*The temperature grade is identified by a label on the shipping container.

A

3

–

V

4

DD PACKAGE

= 125°C, θJA = 160°C/W (NOTE 3)

JMAX

8

OUT B

7

–IN B

6

B

+IN B

5

–

ORDER PART

NUMBER

LT6201CDD

DD PART

MARKING*

LADG

Consult LTC Marketing for parts specified with wider operating temperature ranges.

2

OUT A

–IN A

+IN A

–

V

T

JMAX

TOP VIEW

1

2

–
+

3

4

S8 PACKAGE

8-LEAD PLASTIC SO

= 150°C, θJA = 100°C/W

–

+

ORDER PART

NUMBER

+

V

8

OUT B

7

–IN B

6

+IN B

5

LT6201CS8
LT6201IS8

S8 PART

MARKING

6201
6201I

62001fa

LT6200/LT6200-5

LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

V

= OPEN, unless otherwise noted.

SHDN

TA = 25°C, VS = 5V, 0V; VS = 3V, 0V; VCM = V

= half supply,

OUT

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OS

I

B

∆I

B

I

OS

e

n

i

n

Input Offset Voltage VS = 5V, V

VS = 3V, V
VS = 5V, V

= 3V, V

V

S

Input Offset Voltage Match VCM = Half Supply 0.2 1.1 mV
(Channel-to-Channel) (Note 11) V

Input Bias Current V

IB Shift V
IB Match (Channel-to-Channel) (Note 11) V
Input Offset Current V

= V– to V

CM

= Half Supply –40 –10 µA

CM

V

= V

CM

= V

V

CM

= V– to V

CM

= V– to V

CM

= Half Supply 0.1 4 µA

CM

= V

V

CM

= V

V

CM

Input Noise Voltage 0.1Hz to 10Hz 600 nV

=Half Supply 0.1 1 mV

CM

= Half Supply 0.9 2.5 mV

+

–

+

–

CM

= V+ to V

CM

= V+ to V

CM

+

+
+

–
–

0.6 2 mV

1.8 4 mV

0.5 2.2 mV

818 µA

–50 –23 µA

31 68 µA

0.3 5 µA

0.02 4 µA

0.4 5 µA

P-P

Input Noise Voltage Density f = 100kHz, VS = 5V 1.1 nV/√Hz

f = 10kHz, V

= 5V 1.5 2.4 nV/√Hz

S

Input Noise Current Density, Balanced Source f = 10kHz, VS = 5V 2.2 pA/√Hz
Unbalanced Source f = 10kHz, VS = 5V 3.5 pA/√Hz

Input Resistance Common Mode 0.57 MΩ

Differential Mode 2.1 kΩ

C

IN

Input Capacitance Common Mode 3.1 pF

Differential Mode 4.2 pF

A

VOL

Large-Signal Gain VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2 70 120 V/mV

VS = 5V, VO = 1V to 4V, RL = 100Ω to VS/2 11 18 V/mV
V

= 3V, VO = 0.5V to 2.5V, RL = 1k to VS/2 17 70 V/mV

S

CMRR Common Mode Rejection Ratio VS = 5V, V

V

= 5V, V

S

VS = 3V, V

= V– to V

CM

= 1.5V to 3.5V 85 112 dB

CM

= V– to V

CM

+

+

65 90 dB

60 85 dB

CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V 80 105 dB

PSRR Power Supply Rejection Ratio VS = 2.5V to 10V, LT6201DD VS = 2.5V to 7V 60 68 dB

PSRR Match (Channel-to-Channel) (Note 11) VS = 2.5V to 10V, LT6201DD VS = 2.5V to 7V 65 100 dB
Minimum Supply Voltage (Note 6) 2.5 V

V

OL

V

OH

I

SC

I

S

Output Voltage Swing LOW (Note 7) No Load 9 50 mV

I

= 5mA 50 100 mV

SINK

V

= 5V, I

S

VS = 3V, I

= 20mA 150 290 mV

SINK

= 20mA 160 300 mV

SINK

Output Voltage Swing HIGH (Note 7) No Load 55 110 mV

I

= 5mA 95 190 mV

SOURCE

V

= 5V, I

S

VS = 3V, I

= 20mA 220 400 mV

SOURCE

= 20mA 240 450 mV

SOURCE

Short-Circuit Current VS = 5V ±60 ±90 mA

V

= 3V ±50 ±80 mA

S

Supply Current per Amplifier VS = 5V 16.5 20 mA

VS = 3V 15 18 mA

I

SHDN

V

L

V

H

Disabled Supply Current per Amplifier V
SHDN Pin Current V
V

Pin Input Voltage LOW 0.3 V

SHDN

V

Pin Input Voltage HIGH V+ – 0.5 V

SHDN

= 0.3V 1.3 1.8 mA

SHDN

= 0.3V 200 280 µA

SHDN

62001fa

3

LT6200/LT6200-5
LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

V

= OPEN, unless otherwise noted.

SHDN

TA = 25°C, VS = 5V, 0V; VS = 3V, 0V; VCM = V

= half supply,

OUT

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

Shutdown Output Leakage Current V

t

ON

t

OFF

Turn-On Time V
Turn-Off Time V

= 0.3V 0.1 75 µA

SHDN

= 0.3V to 4.5V, RL = 100Ω, VS = 5V 130 ns

SHDN

= 4.5V to 0.3V, RL = 100Ω, VS = 5V 180 ns

SHDN

GBW Gain Bandwidth Product Frequency = 1MHz, VS = 5V 145 MHz

LT6200-5 750 MHz
LT6200-10 1450 MHz

SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V 31 44 V/µs

VS = 5V, AV = –10, RL = 1k, VO = 4V
LT6200-5 210 V/µs
LT6200-10 340 V/µs

FPBW Full Power Bandwidth (Note 9) VS = 5V, V
t

S

Settling Time (LT6200, LT6201) 0.1%, VS = 5V, V

OUT

= 3V

(LT6200) 3.28 4.66 MHz

P-P

= 2V, AV = –1, RL = 1k 165 ns

STEP

The ● denotes the specifications which apply over 0°C < TA < 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V;
V

= V

CM

= half supply, V

OUT

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OS

Input Offset Voltage VS = 5V, V

Input Offset Voltage Match VCM = Half Supply ● 0.2 1.8 mV

(Channel-to-Channel) (Note 11) V
VOS TC Input Offset Voltage Drift (Note 8) V
I

B

Input Bias Current V

IB Match (Channel-to-Channel) (Note 11) VCM = V– to V
∆I

B

I

OS

A

VOL

IB Shift V

Input Offset Current V

Large-Signal Gain VS = 5V, VO = 0.5V to 4.5V,RL = 1k to VS/2 ● 46 80 V/mV

CMRR Common Mode Rejection Ratio VS = 5V, V

CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V ● 80 105 dB
PSRR Power Supply Rejection Ratio VS = 3V to 10V, LT6201DD VS = 3V to 7V ● 60 65 dB

PSRR Match (Channel-to-Channel) (Note 11) VS = 3V to 10V, LT6201DD VS = 3V to 7V ● 60 100 dB

Minimum Supply Voltage (Note 6) ● 3V
V

OL

V

OH

Output Voltage Swing LOW (Note 7) No Load ● 12 60 mV

Output Voltage Swing HIGH (Note 7) No Load ● 65 120 mV

= OPEN, unless otherwise noted.

SHDN

V
VS = 5V, V

V

V
V

V
V

V
VS = 3V, VO = 0.5V to 2.5V,RL = 1k to VS/2 ● 13 22 V/mV

VS = 5V, V
VS = 3V, V

I
VS = 5V, I
VS = 3V, I

I
V
VS = 3V, I

= Half Supply ● 0.2 1.2 mV

CM

= 3V, V

S

= 3V, V

S

= V– to V

CM

= Half Supply ● 2.5 8 µV/°C

CM

= Half Supply ● –40 –10 µA

CM

= V

CM

= V

CM

= V– to V

CM

= Half Supply ● 0.1 4 µA

CM

= V

CM

= V

CM

= 5V, VO = 1.5V to 3.5V,RL = 100Ω to VS/2 ● 7.5 13 V/mV

S

SINK

SOURCE

= 5V, I

S

= Half Supply ● 1.0 2.7 mV

CM

= V+ to V

CM

= V+ to V

CM

+

+

–

+
+

+

–

= V– to V

CM

= 1.5V to 3.5V ● 80 105 dB

CM

= V– to V

CM

–
–

+

+

● 0.3 3 mV

● 1.5 4 mV

● 0.4 2.8 mV

● 818 µA

● –50 –23 µA

● 0.5 6 µA

● 31 68 µA

● 0.02 4 µA

● 0.4 5 µA

● 64 88 dB

● 60 83 dB

= 5mA ● 55 110 mV

= 20mA ● 170 310 mV

SINK

= 20mA ● 170 310 mV

SINK

= 5mA ● 115 210 mV

= 20mA ● 260 440 mV

SOURCE

= 20mA ● 270 490 mV

SOURCE

62001fa

4

LT6200/LT6200-5

LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

temperature range. VS = 5V, 0V; VS = 3V, 0V; V

CM

= V

The ● denotes the specifications which apply over 0°C < TA < 70°C

= half supply, V

OUT

= OPEN, unless otherwise noted.

SHDN

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

I

SC

Short-Circuit Current VS = 5V ● ±60 ±90 mA

VS = 3V ● ±45 ±75 mA

I

S

Supply Current per Amplifier VS = 5V ● 20 23 mA

VS = 3V ● 19 22 mA

I

SHDN

V

L

V

H

t

ON

t

OFF

Disabled Supply Current per Amplifier V

SHDN Pin Current V

V

Pin Input Voltage LOW ● 0.3 V

SHDN

V

Pin Input Voltage HIGH ● V+ – 0.5 V

SHDN

Shutdown Output Leakage Current V

Turn-On Time V

Turn-Off Time V

= 0.3V ● 1.35 1.8 mA

SHDN

= 0.3V ● 215 295 µA

SHDN

= 0.3V ● 0.1 75 µA

SHDN

= 0.3V to 4.5V, RL = 100Ω, VS = 5V ● 130 ns

SHDN

= 4.5V to 0.3V, RL = 100Ω, VS = 5V ● 180 ns

SHDN

SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V ● 29 42 V/µs

AV = –10, RL = 1k, VO = 4V
LT6200-5 ● 190 V/µs
LT6200-10

FPBW Full Power Bandwidth (Note 9) VS = 5V, V

OUT

= 3V

(LT6200) ● 3.07 4.45 MHz

P-P

● 310 V/µs

The ● denotes the specifications which apply over –40°C < TA < 85°C temperature range. Excludes the LT6201 in the DD package
(Note 3). VS = 5V, 0V; VS = 3V, 0V; V

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OS

VOS TC Input Offset Voltage Drift (Note 8) V
I

B

∆I

B

I

OS

A

VOL

CMRR Common Mode Rejection Ratio VS = 5V, V

PSRR Power Supply Rejection Ratio VS = 3V to 10V ● 60 68 dB

V

OL

Input Offset Voltage VS = 5V, V

Input Offset Voltage Match VCM = Half Supply ● 0.2 2 mV
(Channel-to-Channel) (Note 11) V

Input Bias Current V

IB Shift V
IB Match (Channel-to-Channel) (Note 11) V
Input Offset Current V

Large-Signal Gain VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2 ● 40 70 V/mV

CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V ● 75 105 dB

PSRR Match (Channel-to-Channel) (Note 11) VS = 3V to 10V ● 60 100 dB
Minimum Supply Voltage (Note 6) ● 3V
Output Voltage Swing LOW (Note 7) No Load ● 18 70 mV

CM

= V

= half supply, V

OUT

= OPEN, unless otherwise noted. (Note 5)

SHDN

= Half Supply ● 0.2 1.5 mV

CM

= 3V, V

V

S

VS = 5V, V

= 3V, V

V

S

= V– to V

CM
CM
CM

V

CM

V

CM
CM
CM
CM

V

CM

V

CM

= 5V, VO = 1.5V to 3.5V, RL = 100Ω to VS/2 ● 7.5 13 V/mV

V

S

= Half Supply ● 1.0 2.8 mV

CM

= V+ to V

CM

= V+ to V

CM

+

–
–

● 0.3 3.5 mV

● 1.5 4.3 mV

● 0.4 3 mV

= Half Supply ● 2.5 8.0 µV/°C
= Half Supply ● –40 –10 µA

+

= V

–

= V
= V– to V
= V– to V
= Half Supply ● 0.1 4 µA

= V
= V

+
+

+
–

● 818 µA

● –50 –23 µA

● 31 68 µA

● 19 µA

● 0.02 4 µA

● 0.4 5 µA

VS = 3V, VO = 0.5V to 2.5V,RL = 1k to VS/2 ● 11 20 V/mV

= V– to V
VS = 5V, V
VS = 3V, V

I

SINK

VS = 5V, I
VS = 3V, I

CM

= 1.5V to 3.5V ● 80 100 dB

CM

= V– to V

CM

= 5mA ● 60 120 mV

SINK
SINK

+

+

● 60 80 dB

● 60 80 dB

= 20mA ● 170 310 mV
= 20mA ● 175 315 mV

62001fa

5

LT6200/LT6200-5
LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

temperature range. Excludes the LT6201 in the DD package (Note 3). VS = 5V, 0V; VS = 3V, 0V; V
V

= OPEN, unless otherwise noted. (Note 5)

SHDN

The ● denotes the specifications which apply over –40°C < TA < 85°C

= V

CM

= half supply,

OUT

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OH

I

SC

I

S

I

SHDN

V

L

V

H

t

ON

t

OFF

Output Voltage Swing HIGH (Note 7) No Load ● 65 120 mV

I

= 5mA ● 115 210 mV

SOURCE

VS = 5V, I

= 3V, I

V

S

= 20mA ● 270 450 mV

SOURCE

= 20mA ● 280 500 mV

SOURCE

Short-Circuit Current VS = 5V ● ±50 ±80 mA

= 3V ● ±30 ±60 mA

V

S

Supply Current per Amplifier VS = 5V ● 22 25.3 mA

= 3V ● 20 23 mA

V

Disabled Supply Current per Amplifier V
SHDN Pin Current V
V

Pin Input Voltage LOW ● 0.3 V

SHDN

V

Pin Input Voltage HIGH ● V+ – 0.5 V

SHDN

Shutdown Output Leakage Current V
Turn-On Time V
Turn-Off Time V

S

= 0.3V ● 1.4 1.9 mA

SHDN

= 0.3V ● 220 300 µA

SHDN

= 0.3V ● 0.1 75 µA

SHDN

= 0.3V to 4.5V, RL = 100Ω, VS = 5V ● 130 ns

SHDN

= 4.5V to 0.3V, RL = 100Ω, VS = 5V ● 180 ns

SHDN

SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V ● 23 33 V/µs

AV = –10, RL = 1k, VO = 4V
LT6200-5 ● 160 V/µs
LT6200-10 ● 260 V/µs

FPBW Full Power Bandwidth (Note 9) VS = 5V, V

OUT

= 3V

(LT6200) ● 2.44 3.5 MHz

P-P

TA = 25°C, VS = ±5V, VCM = V

OUT

= 0V, V

= OPEN, unless otherwise noted. Excludes the LT6201 in the DD package (Note 3).

SHDN

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OS

I

B

∆I

B

I

OS

e

n

Input Offset Voltage V

Input Offset Voltage Match VCM = 0V 0.2 1.6 mV
(Channel-to-Channel) (Note 11) V

Input Bias Current V

IB Shift V
IB Match (Channel-to-Channel) (Note 11) V
Input Offset Current V

Input Noise Voltage 0.1Hz to 10Hz 600 nV

= Half Supply 1.4 4 mV

CM

+

V

= V

CM

–

V

= V

CM

= V– to V

CM

= Half Supply – 40 –10 µA

CM

V

= V

CM

V

= V

CM

= V– to V

CM

= V– to V

CM

= Half Supply 1.3 7 µA

CM

V

= V

CM

V

= V

CM

+

+
–

+
+

+
–

–50 –23 µA

2.5 6 mV

2.5 6 mV

0.4 3.2 mV

818 µA

31 68 µA

0.2 6 µA

17 µA
312 µA

P-P

Input Noise Voltage Density f = 100kHz 0.95 nV/√Hz

f = 10kHz 1.4 2.3 nV/√Hz

i

n

Input Noise Current Density, Balanced Source f = 10kHz 2.2 pA/√Hz
Unbalanced Source f = 10kHz 3.5 pA/√Hz

Input Resistance Common Mode 0.57 MΩ

Differential Mode 2.1 kΩ

C

IN

Input Capacitance Common Mode 3.1 pF

Differential Mode 4.2 pF

A

VOL

Large-Signal Gain VO = ±4.5V, RL = 1k 115 200 V/mV

V

= ±2V, RL = 100 15 26 V/mV

O

6

62001fa

LT6200/LT6200-5

LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

TA = 25°C, VS = ±5V, VCM = V

OUT

= 0V, V

= OPEN, unless otherwise

SHDN

noted. Excludes the LT6201 in the DD package (Note 3).

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

CMRR Common Mode Rejection Ratio VCM = V– to V

V

= –2V to 2V 75 100 dB

CM

CMRR Match (Channel-to-Channel) (Note 11) VCM = –2V to 2V 80 105 dB

PSRR Power Supply Rejection Ratio VS = ±1.25V to ±5V 60 68 dB

PSRR Match (Channel-to-Channel) (Note 6) VS = ±1.25V to ±5V 65 100 dB

V

OL

V

OH

I

SC

I

S

I

SHDN

V

L

V

H

t

ON

t

OFF

GBW Gain Bandwidth Product Frequency = 1MHz 110 165 MHz

SR Slew Rate AV = –1, RL = 1k, VO = 4V 35 50 V/µs

FPBW Full Power Bandwidth (Note 9) V
t

S

Output Voltage Swing LOW (Note 7) No Load 12 50 mV

I

SINK

I

SINK

Output Voltage Swing HIGH (Note 7) No Load 70 130 mV

I

SOURCE

I

SOURCE

Short-Circuit Current ±60 ±90 mA
Supply Current per Amplifier 20 23 mA

Disabled Supply Current per Amplifier V
SHDN Pin Current V
V

Pin Input Voltage LOW 0.3 V

SHDN

V

Pin Input Voltage HIGH V+ – 0.5 V

SHDN

Shutdown Output Leakage Current V
Turn-On Time V
Turn-Off Time V

Settling Time (LT6200, LT6201) 0.1%, V

SHDN
SHDN

SHDN
SHDN
SHDN

LT6200-5 530 800 MHz
LT6200-10 1060 1600 MHz

AV = –10, RL = 1k, VO = 4V
LT6200-5 175 250 V/µs
LT6200-10 315 450 V/µs

OUT

+

= 5mA 55 110 mV
= 20mA 150 290 mV

= 5mA 110 210 mV
= 20mA 225 420 mV

= 0.3V 1.6 2.1 mA
= 0.3V 200 280 µA

= 0.3V 0.1 75 µA
= 0.3V to 4.5V, RL = 100Ω, VS = 5V 130 ns
= 4.5V to 0.3V, RL = 100Ω, VS = 5V 180 ns

= 3V

(LT6200-10) 33 47 MHz

P-P

= 2V, AV = –1, RL = 1k 140 ns

STEP

68 96 dB

62001fa

7

LT6200/LT6200-5
LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

temperature range. Excludes the LT6201 in the DD package (Note 3). VS = ±5V, V

The ● denotes the specifications which apply over 0°C < TA < 70°C

= V

CM

OUT

= 0V, V

= OPEN, unless

SHDN

otherwise noted.

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OS

VOS TC Input Offset Voltage Drift (Note 8) V
I

B

∆I

B

I

OS

A

VOL

CMRR Common Mode Rejection Ratio V

PSRR Power Supply Rejection Ratio VS = ±1.5V to ±5V ● 60 65 dB

V

OL

V

OH

I

SC

I

S

I

SHDN

V

L

V

H

t

ON

t

OFF

SR Slew Rate AV = –1, RL = 1k, VO = 4V ● 31 44 V/µs

FPBW Full Power Bandwidth (Note 9) V

Input Offset Voltage V

Input Offset Voltage Match VCM = 0V ● 0.2 1.8 mV
(Channel-to-Channel) (Note 11) V

Input Bias Current V

IB Shift V
IB Match (Channel-to-Channel) (Note 11) V
Input Offset Current V

= Half Supply ● 1.9 4.5 mV

CM

+

V

= V

CM

–

V

= V

CM

= V– to V

CM

= Half Supply ● 8.2 24 µV/°C

CM

= Half Supply ● –40 –10 µA

CM

V

= V

CM

V

= V

CM

= V– to V

CM

= V– to V

CM

= Half Supply ● 1.3 10 µA

CM

V

= V

CM

V

= V

CM

+

+

–

+
+

+

–

● 3.5 7.5 mV

● 3.5 7.5 mV

● 0.4 3.4 mV

● 818 µA

● –50 –23 µA

● 31 68 µA

● 19 µA

● 1.0 10 µA

● 3.5 15 µA

Large-Signal Gain VO = ±4.5V, RL = 1k ● 46 80 V/mV

VO = ±2V, RL = 100 ● 7.5 13.5 V/mV

= V– to V

CM

V

= –2V to 2V ● 75 100 dB

CM

+

● 65 90 dB

CMRR Match (Channel-to-Channel) (Note 11) VCM = –2V to 2V ● 75 105 dB

PSRR Match (Channel-to-Channel) (Note 6) VS = ±1.5V to ±5V ● 60 100 dB
Output Voltage Swing LOW (Note 7) No Load ● 16 70 mV

I

= 5mA ● 60 120 mV

SINK

I

= 20mA ● 170 310 mV

SINK

Output Voltage Swing HIGH (Note 7) No Load ● 85 150 mV

I

= 5mA ● 125 230 mV

SOURCE

I

= 20mA ● 265 480 mV

SOURCE

Short-Circuit Current ● ±60 ±90 mA
Supply Current per Amplifier ● 25 29 mA

Disabled Supply Current per Amplifier V
SHDN Pin Current V
V

Pin Input Voltage LOW ● 0.3 V

SHDN

V

Pin Input Voltage HIGH ● V+ – 0.5 V

SHDN

Shutdown Output Leakage Current V
Turn-On Time V
Turn-Off Time V

= 0.3V ● 1.6 2.1 mA

SHDN

= 0.3V ● 215 295 µA

SHDN

= 0.3V ● 0.1 75 µA

SHDN

= 0.3V to 4.5V, RL = 100Ω, VS = 5V ● 130 ns

SHDN

= 4.5V to 0.3V, RL = 100Ω, VS = 5V ● 180 ns

SHDN

AV = –10, RL = 1k, VO = 4V
LT6200-5 ● 150 215 V/µs
LT6200-10

= 3V

OUT

(LT6200-10) ● 30 43 MHz

P-P

● 290 410 V/µs

8

62001fa

LT6200/LT6200-5

LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

temperature range. Excludes the LT6201 in the DD package (Note 3). VS = ±5V, V

The ● denotes the specifications which apply over –40°C < TA < 85°C

= V

CM

OUT

= 0V, V

= OPEN, unless

SHDN

otherwise noted. (Note 5)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS

V

OS

VOS TC Input Offset Voltage Drift (Note 8) V
I

B

∆I

B

I

OS

A

VOL

CMRR Common Mode Rejection Ratio V

PSRR Power Supply Rejection Ratio VS = ±1.5V to ±5V ● 60 65 dB

V

OL

V

OH

I

SC

I

S

I

SHDN

V

L

V

H

t

ON

t

OFF

SR Slew Rate AV = –1, RL = 1k, VO = 4V ● 31 44 V/µs

FPBW Full Power Bandwidth (Note 9) V

Input Offset Voltage V

Input Offset Voltage Match VCM = 0V ● 0.2 2.0 mV
(Channel-to-Channel) (Note 11) VCM = V– to V

Input Bias Current V

IB Shift V

= Half Supply ● 1.9 4.5 mV

CM

+

V

= V

CM

–

V

= V

CM

+

= Half Supply ● 8.2 24 µV/°C

CM

= Half Supply ● –40 –10 µA

CM

+

V

= V

CM

–

V

= V

CM
CM

= V– to V

+

● 3.5 7.5 mV

● 3.5 7.5 mV

● 0.4 3.6 mV

● 818 µA

● –50 –23 µA

● 31 68 µA

IB Match (Channel-to-Channel) (Note 11) ● 412 µA
Input Offset Current V

= Half Supply ● 1.3 10 µA

CM

+

V

= V

CM

–

V

= V

CM

● 1.0 10 µA

● 3.5 15 µA

Large-Signal Gain VO = ±4.5V, RL = 1k ● 46 80 V/mV

V

= ±2V RL = 100 ● 7.5 13.5 V/mV

O
CM

V

CM

+

= V– to V

● 65 90 dB

= –2V to 2V ● 75 100 dB

CMRR Match (Channel-to-Channel) (Note 11) VCM = –2V to 2V ● 75 105 dB

PSRR Match (Channel-to-Channel) (Note 6) VS = ±1.5V to ±5V ● 60 100 dB
Output Voltage Swing LOW (Note 7) No Load ● 16 75 mV

I

= 5mA ● 60 125 mV

SINK

I

= 20mA ● 170 310 mV

SINK

Output Voltage Swing HIGH (Note 7) No Load ● 85 150 mV

I

= 5mA ● 125 230 mV

SOURCE

I

= 20mA ● 265 480 mV

SOURCE

Short-Circuit Current ● ±60 ±90 mA
Supply Current ● 25 29 mA

Disabled Supply Current V
SHDN Pin Current V
V

Pin Input Voltage LOW ● 0.3 V

SHDN

V

Pin Input Voltage HIGH ● V+ – 0.5 V

SHDN

Shutdown Output Leakage Current V
Turn-On Time V
Turn-Off Time V

= 0.3V ● 1.6 2.1 mA

SHDN

= 0.3V ● 215 295 µA

SHDN

= 0.3V ● 0.1 75 µA

SHDN

= 0.3V to 4.5V, RL = 100Ω, VS = 5V ● 130 ns

SHDN

= 4.5V to 0.3V, RL = 100Ω, VS = 5V ● 180 ns

SHDN

AV = –10, RL = 1k, VO = 4V
LT6200-5

● 125 180 V/µs

LT6200-10 ● 260 370 V/µs

= 3V

OUT

(LT6200-10) ● 27 39 MHz

P-P

Note 1: Absolute maximum ratings are those values beyond which the life
of the device may be impaired.

Note 2: Inputs are protected by back-to-back diodes. If the differential
input voltage exceeds 0.7V, the input current must be limited to less than
40mA.

Note 3: A heat sink may be required to keep the junction temperature
below the absolute maximum rating when the output is shorted

indefinitely. The LT6201 in the DD package is limited by power dissipation

≤ 5V, 0V over the commercial temperature range only.

to V

S

Note 4: The LT6200C/LT6200I and LT6201C/LT6201I are guaranteed
functional over the temperature range of –40°C and 85°C (LT6201DD
excluded).

62001fa

9

LT6200/LT6200-5
LT6200-10/LT6201

ELECTRICAL CHARACTERISTICS

Note 5: The LT6200C/LT6201C are guaranteed to meet specified
performance from 0°C to 70°C. The LT6200C/LT6201C are designed,
characterized and expected to meet specified performance from – 40°C to
85°C, but are not tested or QA sampled at these temperatures. The
LT6200I is guaranteed to meet specified performance from –40°C to 85°C.

Note 6: Minimum supply voltage is guaranteed by power supply rejection
ratio test.

Note 7: Output voltage swings are measured between the output and
power supply rails.

Note 8: This parameter is not 100% tested.
Note 9: Full-power bandwidth is calculated from the slew rate:

FPBW = SR/2πV

P

Note 10: Thermal resistance varies depending upon the amount of PC
board metal attached to the V
certain amount of 2oz copper metal trace connecting to the V
described in the thermal resistance tables in the Application Information
section.

Note 11: Matching parameters on the LT6201 are the difference between
the two amplifiers. CMRR and PSRR match are defined as follows: CMRR
and PSRR are measured in µV/V on the identical amplifiers. The difference
is calculated in µV/V. The result is converted to dB.

Note 12: There are reverse biased ESD diodes on all inputs and outputs as
shown in Figure 1. If these pins are forced beyond either supply, unlimited
current will flow through these diodes. If the current is transient in nature
and limited to less than 30mA, no damage to the device will occur.

UW

TYPICAL PERFOR A CE CHARACTERISTICS

VOS Distribution, VCM = V+/2

80

VS = 5V, 0V
SO-8

70

60

50

40

30

NUMBER OF UNITS

20

10

0

–600 –200 200 1000

–1000

INPUT OFFSET VOLTAGE (µV)

600

6200 G01

VOS Distribution, VCM = V

80

VS = 5V, 0V
SO-8

70

60

50

40

30

NUMBER OF UNITS

20

10

0

–1600–1200

–800 –400

INPUT OFFSET VOLTAGE (µV)

0 400

+

800 1200

6200 G02

1600

–

pin of the device. θJA is specified for a

VOS Distribution, VCM = V

80

VS = 5V, 0V
SO-8

70

60

50

40

30

NUMBER OF UNITS

20

10

0

–1600–1200

–800 –400

INPUT OFFSET VOLTAGE (µV)

0 400

–

pin as

–

800 1200

1600

6200 G03

Supply Current vs Supply Voltage

30

25

20

15

10

SUPPLY CURRENT (mA)

5

0

0

24

TOTAL SUPPLY VOLTAGE (V)

TA = 125°C

TA = 25°C

TA = –55°C

81214

610

10

6200 G04

Offset Voltage
vs Input Common Mode Voltage

3.0

2.5

2.0

1.5

1.0

0.5

0

OFFSET VOLTAGE (mV)

–0.5

–1.0

–1.5

0

INPUT COMMON MODE VOLTAGE (V)

TA = 125°C

TA = 25°C

TA = –55°C

13

2

VS = 5V, 0V
TYPICAL PART

4

6200 G05

Input Bias Current
vs Common Mode Voltage

20

VS = 5V, 0V

10

0

–10

–20

INPUT BIAS CURRENT (µA)

–30

–40

5

–1

TA = –55°C

TA = 25°C

TA = 125°C

356

01

COMMON MODE VOLTAGE (V)

24

6200 G06

62001fa

UW

TYPICAL PERFOR A CE CHARACTERISTICS

LT6200/LT6200-5

LT6200-10/LT6201

Input Bias Current
vs Temperature

20

VS = 5V, 0V

15

VCM = 5V

VCM = 0V

25 85

10

TEMPERATURE (°C)

INPUT BIAS CURRENT (µA)

10

5
0

–5
–10
–15
–20
–25
–30

–35 –5

–50

–20

Minimum Supply Voltage

1.0
VCM = VS/2

0.5

0

TA = –55°C

–0.5

–1.0

–1.5

CHANGE IN OFFSET VOTLAGE (mV)

–2.0

1234

TOTAL SUPPLY VOLTAGE (V)

55

40

TA = 125°C

70

6200 G07

TA = 25°C

6200 G10

Output Saturation Voltage
vs Load Current (Output Low)

10

VS = 5V, 0V

1

0.1

0.01

OUTPUT SATURATION VOLTAGE (V)

0.001

0.1

Output Short-Circuit Current
vs Power Supply Voltage Open-Loop Gain

120

SOURCING

100

TA = 25°C

80
60
40
20

0
–20
–40

SINKING

–60
–80

–100

OUTPUT SHORT-CIRCUIT CURRENT (mA)

–120

50.50 1.5 2.5 3.5 4.5

1.5

TA = 125°C

TA = –55°C

TA = 25°C

1 10 100

LOAD CURRENT (mA)

TA = –55°C

TA = 125°C

TA = 25°C

TA = 125°C

2.5

2

POWER SUPPLY VOLTAGE (±V)

TA = –55°C

3.5

3

4

6200 G08

4.5

6200 G11

Output Saturation Voltage
vs Load Current (Output High)

10

VS = 5V, 0V

1

0.1

OUTPUT SATURATION VOLTAGE (V)

0.01

–0.5

–1.0

INPUT VOLTAGE (mV)

–1.5

–2.0

5

–2.5

TA = 125°C

TA = 25°C

0.1

2.5

2.0

1.5

1.0

0.5
0

0

TA = –55°C

1 10 100

LOAD CURRENT (mA)

= 1k

R

L

RL = 100Ω

0.5

1.5 2

1

OUTPUT VOLTAGE (V)

6200 G09

VS = 3V, 0V

= 25°C

T

A

2.5

6200 G12

3

Open-Loop Gain Open-Loop Gain Offset Voltage vs Output Current

2.5

2.0

1.5

1.0

0.5
0

–0.5
–1.0

INPUT VOLTAGE (mV)

–1.5
–2.0
–2.5

1

0

OUTPUT VOLTAGE (V)

= 1k

R

L

RL = 100Ω

2

VS = 5V, 0V

= 25°C

T

A

34

6200 G13

2.5

2.0

1.5

1.0

0.5
0

–0.5

–1.0

INPUT VOLTAGE (mV)

–1.5
–2.0

5

–2.5

RL = 1k

–3–4

–5

–1–2

0

OUTPUT VOLTAGE (V)

VS = ±5V

= 25°C

T

A

RL = 100Ω

12 4

3

6200 G14

5

15

VS = ±5V

10

5

0

–5

OFFSET VOLTAGE (mV)

–10

–15

T

TA = –55°C TA = 25°C

–60 –20 20 60

OUTPUT CURRENT (mA)

= 125°C

A

100–100

6200 G15

62001fa

11

LT6200/LT6200-5
LT6200-10/LT6201

UW

TYPICAL PERFOR A CE CHARACTERISTICS

Warm-Up Drift
vs Time (LT6200S8) Total Noise vs Source Resistance Input Noise Voltage vs Frequency

300

TA = 25°C

250

200

150

100

VS = ±1.5V

50

CHANGE IN OFFSET VOLTAGE (µV)

0

VS = ±2.5V

0

40 80

20 60

TIME AFTER POWER-UP (SEC)

VS = ±5V

100

120

140

160

6200 G16

100

VS = ±5V

= 0V

V

CM

f = 100kHz
UNBALANCED
SOURCE

10

RESISTORS

1

TOTAL NOISE VOLTAGE (nV/√Hz)

0.1
10 1k 10k 100k

100

SOURCE RESISTANCE (Ω)

LT6200

TOTAL NOISE

RESISTOR
NOISE

LT6200 AMPLIFIER

NOISE VOLTAGE

6200 G17

NOISE VOLTAGE (nV/√Hz)

45

40

35

30

25

20

15

10

5

0

10

PNP ACTIVE
V

= 0.5V

CM

100

NPN ACTIVE

= 4.5V

V

CM

BOTH ACTIVE
V

= 2.5V

CM

1k

FREQUENCY (Hz)

VS = 5V, 0V
T

= 25°C

A

10k

6200 G18

100k

Balanced Noise Current
vs Frequency

25

20

PNP ACTIVE

= 0.5V

V

CM

15

10

5

BALANCED NOISE CURRENT (pA/√Hz)

0

10 1k 10k 100k

BOTH ACTIVE

= 2.5V

V

CM

NPN ACTIVE
V

CM

100

FREQUENCY (Hz)

= 4.5V

VS = 5V, 0V
T

A

BALANCED
SOURCE
RESISTANCE

Supply Current
vs SHDN Pin Voltage

22

= 5V, 0V

V

S

20
18
16
14
12
10

8
6

SUPPLY CURRENT (mA)

4
2
0

1234

0

SHDN PIN VOLTAGE (V)

= 25°C

TA = –55°C

6200 G19

TA = 25°C

UNBALANCED NOISE CURRENT (pA/√Hz)

TA = 125°C

Unbalanced Noise Current
vs Frequency

35

30

PNP ACTIVE

25

20

15

10

5

0

10 1k 10k 100k

= 0.5V

V

CM

100

BOTH ACTIVE

= 2.5V

V

CM

NPN ACTIVE

= 4.5V

V

CM

FREQUENCY (Hz)

VS = 5V, 0V

= 25°C

T

A

UNBALANCED
SOURCE
RESISTANCE

SHDN Pin Current
vs SHDN Pin Voltage

50

V

0

–50

–100

–150

–200

SHDN PIN CURRENT (µA)

–250

5

6200 G43

–300

0

0.1Hz to 10Hz Output Noise
Voltage

800

VS = 5V, 0V

= VS/2

V

CM

600

400

200

0

–200

–400

OUTPUT VOLTAGE NOISE (nV)

–600

–800

6200 G20

= 5V, 0V

S

TA = 25°C

T

= –55°C

A

T

= 125°C

A

123 5

SHDN PIN VOLTAGE (V)

4

TIME (5SEC/DIV)

6200 G21

6200 G44

12

62001fa

UW

FREQUENCY (Hz)

40

COMMON MODE REJECTION RATIO (dB)

80

120

20

60

100

10k 1M 10M 100M 1G

6200 G28

0

100k

VS = 5V, 0V
V

CM

= VS/2

TYPICAL PERFOR A CE CHARACTERISTICS

Gain Bandwidth and Phase
Margin vs Temperature Open-Loop Gain vs Frequency

VS = ±5V

VS = 3V, 0V

PHASE MARGIN

180

160

GAIN BANDWIDTH (MHz)

140

120

100

–50

–25

80
70
60
50
40
30

GAIN (dB)

20
10

0

VCM = 0V

= 5pF

C

–10

L

= 1k

R

L

–20

100k 10M 100M 1G

1M

VS = ±5V

VS = 3V, 0V

GAIN BANDWIDTH

0

25 125

50

TEMPERATURE (°C)

PHASE

GAIN

VS = ±1.5V

FREQUENCY (Hz)

75 100

VS = ±5V

VS = ±1.5V

VS = ±5V

6200 G22

6200 G24

70

60

50

PHASE MARGIN (DEG)

40

120
100
80
60

PHASE (DEG)

40
20
0
–20
–40
–60
–80

80
70
60
50
40
30

GAIN (dB)

20
10

–10

–20

180
160
140

GAIN BANDWIDTH (MHz)

120
100

80

LT6200/LT6200-5

LT6200-10/LT6201

LT6200, LT6201

PHASE

VCM = 0.5V

GAIN

VCM = 4.5V

0

VS = 5V, 0V

= 5pF

C

L

= 1k

R

L

100k 10M 100M 1G

1M

FREQUENCY (Hz)

Gain Bandwidth and Phase
Margin vs Supply VoltageOpen-Loop Gain vs Frequency

TA = 25°C

= 1k

R

L

= 5pF

C

L

0

4

2

TOTAL SUPPLY VOLTAGE (V)

VCM = 4.5V

VCM = 0.5V

PHASE MARGIN

GAIN BANDWIDTH

8

6

6200 G23

10

12

6200 G25

120
100
80
60

PHASE (DEG)

40
20
0
–20
–40
–60
–80

80
70
60

PHASE MARGIN (DEG)

50
40
30

14

Slew Rate vs Temperature

140

AV = –1

= RG = 1k

R

F

120

= 1k

R

L

100

80

SLEW RATE (V/µs)

60

40

20

0

–55 –35 –15 5 25 45 65 85 105

VS = ±5V FALLING

VS = ±2.5V FALLING

TEMPERATURE (°C)

VS = ±5V RISING

VS = ±2.5V RISING

6200 G26

125

1000

VS = 5V, 0V

100

= 10

A

V

10

1

OUTPUT IMPEDANCE (Ω)

0.1

0.01

0.1 1 10

AV = 2

AV = 1

FREQUENCY (MHz)

Common Mode Rejection Ratio
vs FrequencyOutput Impedance vs Frequency

100

6200 G27

62001fa

13

LT6200/LT6200-5
LT6200-10/LT6201

UW

TYPICAL PERFOR A CE CHARACTERISTICS

Power Supply Rejection Ratio
vs Frequency Overshoot vs Capacitive Load

80

70

60

50

40

30

20

10

POWER SUPPLY REJECTION RATIO (dB)

0

10k

1k 100k 1M 100M

FREQUENCY (Hz)

NEGATIVE

SUPPLY

VS = 5V, 0V
V
T

A

POSITIVE
SUPPLY

10M

= VS/2

CM

= 25°C

6200 G29

40

VS = 5V, 0V

= 1

A

V

35

30

25

20

15

OVERSHOOT (%)

10

RS = 50Ω
R

5

0

10

RS = 20Ω

= 50Ω

L

100 1000

CAPACITIVE LOAD (pF)

RS = 10Ω

LT6200, LT6201

Overshoot vs Capacitive Load

60

VS = 5V, 0V
A

50

40

30

OVERSHOOT (%)

20

10

0

10

6200 G30

= 2

V

RS = 20Ω

RS = 50Ω
R

CAPACITIVE LOAD (pF)

RS = 10Ω

= 50Ω

L

100 1000

6200 G31

Settling Time vs Output Step
(Noninverting)

200

VS = ±5V

= 1

A

V

= 25°C

T

A

150

100

SETTLING TIME (ns)

50

0

1mV 1mV

10mV 10mV

–4

–3 –2 –1 0

OUTPUT STEP (V)

–

+

V

IN

Distortion vs Frequency, AV = 1

–50

AV = 1

= 2V

V

O

–60

–70

–80

–90

DISTORTION (dBc)

–100

–110

100k

P-P

VS = ±2.5V

HD2, RL = 1k

HD2, RL = 100Ω

HD3, RL = 100Ω

1M 10M

FREQUENCY (Hz)

V

OUT

500Ω

1234

6200 G32

HD3, RL = 1k

6200 G35

Settling Time vs Output Step
(Inverting)

200

VS = ±5V

= –1

A

V

= 25°C

T

A

150

100

SETTLING TIME (ns)

50

10mV 10mV

0

–4

–3 –2 –1 0

500Ω

V

IN

1mV

OUTPUT STEP (V)

–

+

Distortion vs Frequency, AV = 1

–50

AV = 1

= 2V

V

O

–60

–70

–80

–90

DISTORTION (dBc)

–100

–110

100k

P-P

VS = ±5V

HD2, RL = 1k

HD2, RL = 100Ω

HD3, RL = 100Ω

1M 10M

FREQUENCY (Hz)

500Ω

V

OUT

1mV

1234

6200 G33

HD3, RL = 1k

6200 G36

Maximum Undistorted Output
Signal vs Frequency

10

AV = –1

9

)

P-P

8

7

6

5

4

VS = ±5V

OUTPUT VOLTAGE SWING (V

3

= 25°C

T

A

HD2, HD3 < –40dBc

2

10k

AV = 2

100k 1M 10M

FREQUENCY (Hz)

Distortion vs Frequency, AV = 2

–40

AV = 2

= 2V

V

O

–50

–60

–70

–80

DISTORTION (dBc)

–90

–100

–110

100k

P-P

VS = ±2.5V

HD2, RL = 100Ω

HD3, RL = 100Ω

HD2, RL = 1k

1M

FREQUENCY (Hz)

6200 G34

HD3, RL = 1k

10M

6200 G37

14

62001fa

UW

TYPICAL PERFOR A CE CHARACTERISTICS

LT6200/LT6200-5

LT6200-10/LT6201

LT6200, LT6201

Distortion vs Frequency, AV = 2

–40

AV = 2

= 2V

V

O

–50

–60

–70

–80

DISTORTION (dBc)

–90

–100

–110

100k

P-P

VS = ±5V

HD2, RL = 100Ω

HD2, RL = 1k

HD3, RL = 100Ω

1M

FREQUENCY (Hz)

5V Large-Signal Response

5V

1V/DIV

0V

HD3, RL = 1k

6200 G38

10M

Channel Separation vs Frequency

0

TA = 25°C

–10

A

= 1

V

–20

V

= ±5V

S

–30
–40
–50
–60
–70
–80

VOLTAGE GAIN (dB)

–90
–100
–110
–120

0.1

1 10 100

FREQUENCY (MHz)

±5V Large-Signal Response

2V/DIV

0V

6200 G77

V

1V/DIV

V

OUT

2V/DIV

V

= 5V, 0V 200ns/DIV 6200 G39

S

AV = 1

= 1k

R

L

Output Overdrive Recovery

0V

IN

0V

= 5V, 0V 200ns/DIV 6200 G42

V

S

AV = 2

50mV/DIV

V

= ±5V 200ns/DIV 6200 G41

S

AV = 1
R

= 1k

L

5V Small-Signal Response

VS = 5V, 0V 200ns/DIV 6200 G40
AV = 1

= 1k

R

L

62001fa

15

LT6200/LT6200-5

FREQUENCY (Hz)

30

GAIN (dB)

PHASE (DEG)

90

100

20
10

80

50

70
60

40

100k 10M 100M 1G

6200 G50

–10

0

100

120

80

20

60
40

0

1M

VS = ±5V

GAIN

PHASE

VS = ±5V

VS = ±1.5V

VS = ±1.5V

VCM = 0V
C

L

= 5pF

R

L

= 1k

RESISTOR LOAD (Ω)

0

0

GAIN BANDWIDTH (MHz)

100

300

400

500

600 700 800 900

900

G200 G53

200

100 200 300 400 500 1000

600

700

800

VS = ±5V
R

F

= 10k

R

G

= 1k

T

A

= 25°C

LT6200-10/LT6201

UW

TYPICAL PERFOR A CE CHARACTERISTICS

Gain Bandwidth and Phase Margin
vs Temperature

PHASE MARGIN

1000

GAIN BANDWIDTH

900

800

GAIN BANDWIDTH (MHz)

700

600

500

–50

0

–25

TEMPERATURE (°C)

VS = ±5V

VS = 3V, 0V

VS = ±5V

VS = 3V, 0V

25 125

50

75 100

6200 G45

90

80

70

PHASE MARGIN (DEG)

60

50

Slew Rate vs Temperature Overshoot vs Capacitive Load

450

AV = –5
R

= RL = 1k

F

400

R

= 200Ω

G

350

300

250

200

SLEW RATE (V/µs)

150

100

VS = ±5V FALLING

0

–55 –25 0 25 50 75 100

VS = ±5V RISING

VS = ±2.5V FALLING

VS = ±2.5V RISING

TEMPERATURE (°C)

LT6200-5

125

6200 G46

60

VS = 5V, 0V

= 5

A

V

50

40

30

OVERSHOOT (%)

20

10

0

10

RS = 0Ω

RS = 50Ω

100 1000

CAPACITIVE LOAD (pF)

RS = 10Ω

RS = 20Ω

6200 G47

Power Supply Rejection Ratio
vs Frequency

80

POSITIVE

70

60

50

40

30

20

10

POWER SUPPLY REJECTION RATIO (dB)

SUPPLY

NEGATIVE

SUPPLY

0

10k

1k 100k 1M 100M

FREQUENCY (Hz)

Open-Loop Gain vs Frequency

100

90
80
70
60
50
40

GAIN (dB)

30
20
10

0

–10

100k 10M 100M 1G

16

PHASE

GAIN

VS = 5V, 0V

= 5pF

C

L

= 1k

R

L

VCM = 4.5V

1M

FREQUENCY (Hz)

VCM = 0.5V

VCM = 4.5V

VCM = 0.5V

VS = 5V, 0V

= 25°C

T

A

= VS/2

V

CM

10M

6200 G48

6200 G51

Output Impedance vs Frequency Open-Loop Gain vs Frequency

1000

VS = 5V, 0V

100

10

1

OUTPUT IMPEDANCE (Ω)

0.1

0.01
100k 1M 10M

Gain Bandwidth and Phase Margin
vs Supply Voltage Gain Bandwidth vs Resistor Load

120
100
80
60

PHASE (DEG)

40
20
0
–20
–40
–60
–80
–100

TA = 25°C

= 1k

R

L

= 5pF

C

L

1000

GAIN BANDWIDTH (MHz)

800

600

400

0

AV = 50

AV = 5

FREQUENCY (Hz)

PHASE MARGIN

GAIN BANDWIDTH

24 8

TOTAL SUPPLY VOLTAGE (V)

6

6200 G49

10

100M

6200 G52

90

80

PHASE MARGIN (DEG)

70

60

50

12

62001fa

UW

TYPICAL PERFOR A CE CHARACTERISTICS

LT6200/LT6200-5

LT6200-10/LT6201

LT6200-5

Common Mode Rejection Ratio
vs Frequency

120

VS = 5V, 0V

= VS/2

V

CM

100

80

60

40

20

COMMON MODE REJECTION RATIO (dB)

0

10k 1M 10M 100M 1G

100k

FREQUENCY (Hz)

6200 G54

Maximum Undistorted Output
Signal vs Frequency

10

9

)

8

P-P

7
6
5
4
3
2

VS = ±5V

OUTPUT VOLTAGE SWING (V

= 5

A

1

V

= 25°C

T

A

0

10k 1M 10M 100M

100k

FREQUENCY (Hz)

2nd and 3rd Harmonic Distortion
vs Frequency ±5V Large-Signal Response

–40

AV = 5

= 2V

V

O

VS = ±5V

P-P

RL = 100Ω, 3RD

RL = 1k, 2ND

RL = 100Ω, 2ND

5V

2V/DIV 0V

–5V

–50

–60

–70

–80

DISTORTION (dB)

–90

6200 G55

2nd and 3rd Harmonic Distortion
vs Frequency

–40

AV = 5

= 2V

V

O

VS = ±2.5V

10k

P-P

RL = 100Ω, 3RD

RL = 100Ω, 2ND

RL = 1k, 2ND

RL = 1k, 3RD

100k 1M 10M

FREQUENCY (Hz)

–50

–60

–70

–80

DISTORTION (dB)

–90

–100

Output-Overdrive Recovery

V

IN

1V/DIV

0V

V

OUT

2V/DIV

0V

6200 G56

–100

–110

10k

RL = 1k, 3RD

100k 1M 10M

FREQUENCY (Hz)

6200 G57

5V Small-Signal Response

50mV/DIV 0V

V

= 5V, 0V 50ns/DIV 6200 G61

S

AV = 5

= 1k

R

L

= 10.8pF SCOPE PROBE

C

L

= ±5V 50ns/DIV 6200 G58

V

S

AV = 5
R

= 1k

L

= 10.8pF SCOPE PROBE

C

L

10nV

1nV/√Hz/DIV

0nV

100kHz 15MHz/DIV 150MHz

= 5V, 0V 50ns/DIV 6200 G59

V

S

AV = 5
C

= 10.8pF SCOPE PROBE

L

Input Referred High Frequency
Noise Spectrum

NOISE LIMITED BY INSTRUMENT NOISE FLOOR

6200 G60

62001fa

17

LT6200/LT6200-5

FREQUENCY (Hz)

30

GAIN (dB)

PHASE (DEG)

90

100

20
10

80

50

70
60

40

100k 10M 100M 1G

6200 G67

–10

0

100

120

80

20

60
40

0

1M

VS = ±5V

VS = ±5V

GAIN

PHASE

VCM = 0V
C

L

= 5pF

R

L

= 1k

VS = ±1.5V

VS = ±1.5V

RESISTOR LOAD (Ω)

0

0

GAIN BANDWIDTH (MHz)

200

600

800

1000

600 700 800 900

1800

G200 G70

400

100 200 300 400 500 1000

1200

1400

1600

VS = ±5V
R

F

= 10k

R

G

= 1k

T

A

= 25°C

LT6200-10/LT6201

UW

TYPICAL PERFOR A CE CHARACTERISTICS

Gain Bandwidth and Phase Margin
vs Temperature Slew Rate vs Temperature Overshoot vs Capacitive Load

750

AV = –10

700

= RL = 1k

R

F

R

= 100Ω

650

G

600

PHASE MARGIN (DEG)

550
500
450
400
350

SLEW RATE (v/µs)

300
250
200
150

VS = ±5V FALLING

–50

–25

VS = ±5V RISING

VS = ±2.5V FALLING

VS = ±2.5V RISING

25

0

TEMPERATURE (°C)

PHASE MARGIN

2000

GAIN BANDWIDTH

1800

1600

GAIN BANDWIDTH (MHz)

1400

1200
1000

–50

0

–25

TEMPERATURE (°C)

VS = ±5V

VS = 3V, 0V

VS = ±5V

VS = 3V, 0V

25 125

50

75 100

80
70
60
50

6200 G62

50

LT6200-10

75

100

6200 G63

125

60

VS = 5V, 0V

= 10

A

V

50

40

30

OVERSHOOT (%)

20

10

RS = 50Ω

0

10

RS = 20Ω

CAPACITIVE LOAD (pF)

RS = 0Ω

RS = 10Ω

100 1000

6200 G64

Power Supply Rejection Ratio
vs Frequency Output Impedance vs Frequency Open-Loop Gain vs Frequency

80

70

60

50

40

30

20

10

POWER SUPPLY REJECTION RATIO (dB)

0

1k 100k 1M 100M

POSITIVE

SUPPLY

NEGATIVE

SUPPLY

10k

FREQUENCY (Hz)

Open-Loop Gain vs Frequency

100

90
80
70
60
50
40

GAIN (dB)

30
20
10

VS = 5V, 0V
C

0

R

–10

100k 10M 100M 1G

18

PHASE

GAIN

VCM = 4.5V

= 5pF

L

= 1k

L

1M

FREQUENCY (Hz)

VCM = 4.5V

VCM = 0.5V

VCM = 0.5V

VS = 5V, 0V

= 25°C

T

A

= VS/2

V

CM

10M

6200 G65

6200 G68

1000

100

10

1

OUTPUT IMPEDANCE (Ω)

0.1

0.01
100k 1M 10M

120
100
80
60

PHASE (DEG)

40
20
0
–20
–40
–60
–80
–100

1800

1600

GAIN BANDWIDTH (MHz)

1400

1200

1000

VS = 5V, 0V

AV = 100

AV = 10

FREQUENCY (Hz)

100M

6200 G66

Gain Bandwidth and Phase Margin
vs Supply Voltage Gain Bandwidth vs Resistor Load

TA = 25°C
R

= 1k

L

C

= 5pF

L

PHASE MARGIN

GAIN BANDWIDTH

24 8

0

TOTAL SUPPLY VOLTAGE (V)

6

90

80

PHASE MARGIN (DEG)

70

60

50

10

12

6200 G69

62001fa

UW

FREQUENCY (Hz)

10k

–100

DISTORTION (dB)

–60

–50

–40

100k 1M 10M

6200 G73

–70

–80

–90

AV = 10
V

O

= 2V

P-P

VS = ±2.5V

RL = 100Ω, 3RD

RL = 100Ω, 2ND

RL = 1k, 2ND

RL = 1k, 3RD

TYPICAL PERFOR A CE CHARACTERISTICS

LT6200/LT6200-5

LT6200-10/LT6201

LT6200-10

Common Mode Rejection Ratio
vs Frequency

120

VS = 5V, 0V

= VS/2

V

CM

100

80

60

40

20

COMMON MODE REJECTION RATIO (dB)

0

10k 1M 10M 100M 1G

100k

FREQUENCY (Hz)

6200 G71

Maximum Undistorted Output
Signal vs Frequency

10

9

)

8

P-P

7
6
5
4
3
2

VS = ±5V

OUTPUT VOLTAGE SWING (V

= 10

A

1

V

= 25°C

T

A

0

10k 1M 10M 100M

100k

FREQUENCY (Hz)

2nd and 3rd Harmonic Distortion
vs Frequency ±5V Large-Signal Response

–40

AV = 10

= 2V

V

O

VS = ±5V

P-P

RL = 100Ω, 3RD

RL = 1k, 3RD

5V

RL = 100Ω, 2ND

2V/DIV 0V

–5V

–50

–60

–70

–80

DISTORTION (dB)

–90

6200 G72

2nd and 3rd Harmonic Distortion
vs Frequency

Output-Overdrive Recovery

V

IN

1V/DIV

0V

V

OUT

2V/DIV

0V

–100

–110

10k

50mV/DIV 0V

RL = 1k, 2ND

100k 1M 10M

FREQUENCY (Hz)

= ±5V 50ns/DIV 6200 G75

V

S

AV = 10
R

= 1k

L

= 10.8pF SCOPE PROBE

C

L

6200 G74

5V Small-Signal Response

VS = 5V, 0V 50ns/DIV 6200 G78
AV = 10
R

= 1k

L

= 10.8pF SCOPE PROBE

C

L

10nV

1nV/√Hz/DIV

0nV

V

= 5V, 0V 50ns/DIV 6200 G76

S

AV = 10
C

= 10.8pF SCOPE PROBE

L

Input Referred High Frequency
Noise Spectrum

100kHz 15MHz/DIV 150MHz

6200 G77

62001fa

19

LT6200/LT6200-5
LT6200-10/LT6201

U

WUU

APPLICATIO S I FOR ATIO

Amplifier Characteristics

Figure 1 shows a simplified schematic of the LT6200
family, which has two input differential amplifiers in par­allel that are biased on simultaneously when the common
mode voltage is at least 1.5V from either rail. This topology
allows the input stage to swing from the positive supply
voltage to the negative supply voltage. As the common
mode voltage swings beyond V
I1 saturates and current in Q1/Q4 is zero. Feedback is
maintained through the Q2/Q3 differential amplifier, but
with an input gm reduction of 1/2. A similar effect occurs
with I2 when the common mode voltage swings within

1.5V of the negative rail. The effect of the gm reduction is
a shift in the VOS as I1 or I2 saturate.

Input bias current normally flows out of the + and – inputs.
The magnitude of this current increases when the input
common mode voltage is within 1.5V of the negative rail,
and only Q1/Q4 are active. The polarity of this current
reverses when the input common mode voltage is within

1.5V of the positive rail and only Q2/Q3 are active.
The second stage is a folded cascode and current mirror

that converts the input stage differential signals to a single
ended output. Capacitor C1 reduces the unity cross
frequency and improves the frequency stability without
degrading the gain bandwidth of the amplifier. The
differential drive generator supplies current to the output
transistors that swing from rail-to-rail.

– 1.5V, current source

CC

The LT6200-5/LT6200-10 are decompensated op amps for
higher gain applications. These amplifiers maintain iden­tical DC specifications with the LT6200, but have a reduced
Miller compensation capacitor CM. This results in a signifi­cantly higher slew rate and gain bandwidth product.

Input Protection

There are back-to-back diodes, D1 and D2, across the
+ and – inputs of these amplifiers to limit the differential
input voltage to ±0.7V. The inputs of the LT6200 family do
not have internal resistors in series with the input transis­tors. This technique is often used to protect the input
devices from overvoltage that causes excessive currents
to flow. The addition of these resistors would significantly
degrade the low noise voltage of these amplifiers. For
instance, a 100Ω resistor in series with each input would
generate 1.8nV/√Hz of noise, and the total amplifier noise
voltage would rise from 0.95nV/√Hz to 2.03nV/√Hz. Once
the input differential voltage exceeds ±0.7V, steady-state
current conducted though the protection diodes should be
limited to ±40mA. This implies 25Ω of protection resis­tance per volt of continuous overdrive beyond ±0.7V. The
input diodes are rugged enough to handle transient cur­rents due to amplifier slew rate overdrive or momentary
clipping without these resistors.

Figure 2 shows the input and output waveforms of the
LT6200 driven into clipping while connected in a gain of

20

DESD1

+

–

+

V

R1 R2

I

1

+V

–V

DESD2

DESD4DESD3

–V

+V

Q1 Q4

Q2 Q3

D2D1

R3 R4 R5

I

2

Figure 1. Simplified Schematic

Q5

C1

Q8

D3

BIAS

Q6

C

M

+V

Q9

DIFFERENTIAL

DRIVE

GENERATOR

Q7

6203/04 F01

Q11

Q10

DESD7

V

SHDN

DESD8

–V

+V

DESD5

DESD6

–V

–

V

62001fa

LT6200/LT6200-5

LT6200-10/LT6201

U

WUU

APPLICATIO S I FOR ATIO

AV = 1. In this photo, the input signal generator is clipping
at ±35mA, and the output transistors supply this genera­tor current through the protection diodes.

V

CC

2.5V

0V

V

EE

–2.5V

Figure 2. VS = ±2.5V, AV = 1 with Large Overdrive

Power Dissipation

The LT6200 combines high speed with large output cur­rent in a small package, so there is a need to ensure that
the die’s junction temperature does not exceed 150°C. The
LT6200 is housed in a 6-lead TSOT-23 package. The
package has the V– supply pin fused to the lead frame to
enhance the thermal conductance when connecting to a
ground plane or a large metal trace. Metal trace and plated
through-holes can be used to spread the heat generated by
the device to the backside of the PC board. For example, on
a 3/32" FR-4 board with 2oz copper, a total of 270 square
millimeters connects to Pin␣ 2 of the LT6200 in an TSOT-23
package will bring the thermal resistance, θJA, to about
135°C/W. Without extra metal trace beside the power line
connecting to the V– pin to provide a heat sink, the thermal
resistance will be around 200°C/W. More information on
thermal resistance with various metal areas connecting to
the V– pin is provided in Table 1.

ESD

The LT6200 has reverse-biased ESD protection diodes on
all inputs and outputs as shown in Figure 1. If these pins
are forced beyond either supply, unlimited current will
flow through these diodes. If the current is transient and
limited to 30mA or less, no damage to the device will
occur.

Noise

The noise voltage of the LT6200 is equivalent to that of a
56Ω resistor, and for the lowest possible noise it is
desirable to keep the source and feedback resistance
at or below this value, i.e., RS + RG//RFB ≤ 56Ω. With
RS + RG//RFB = 56Ω the total noise of the amplifier is:
en = √(0.95nV)2 + (0.95nV)2 = 1.35nV. Below this resis­tance value, the amplifier dominates the noise, but in the
resistance region between 56Ω and approximately 6kΩ,
the noise is dominated by the resistor thermal noise. As
the total resistance is further increased, beyond 6k, the
noise current multiplied by the total resistance eventually
dominates the noise.

For a complete discussion of amplifier noise, see the
LT1028 data sheet.

Table 1. LT6200 6-Lead TSOT-23 Package

COPPER AREA

TOPSIDE (mm

270 2500 135°C/W
100 2500 145°C/W

20 2500 160°C/W

0 2500 200°C/W

Device is mounted on topside.

BOARD AREA THERMAL RESISTANCE

2

) (mm2) (JUNCTION-TO-AMBIENT)

Junction temperature TJ is calculated from the ambient
temperature TA and power dissipation PD as follows:

TJ = TA + (PD • θJA)

The power dissipation in the IC is the function of the supply
voltage, output voltage and the load resistance. For a given
supply voltage, the worst-case power dissipation P

D(MAX)

occurs at the maximum quiescent supply current and at
the output voltage which is half of either supply voltage (or
the maximum swing if it is less than 1/2 the supply
voltage). P

P

D(MAX)

Example: An LT6200 in TSOT-23 mounted on a 2500mm

is given by:

D(MAX)

= (VS • I

S(MAX)

) + (VS/2)2/R

L

2

area of PC board without any extra heat spreading plane
connected to its V– pin has a thermal resistance of

62001fa

21

LT6200/LT6200-5
LT6200-10/LT6201

U

WUU

APPLICATIO S I FOR ATIO

200°C/W, θJA. Operating on ±5V supplies driving 50Ω
loads, the worst-case power dissipation is given by:

P

D(MAX)

The maximum ambient temperature that the part is
allowed to operate is:

TA = TJ – (P
= 150°C – (0.355W • 200°C/W) = 79°C

To operate the device at higher ambient temperature,
connect more metal area to the V– pin to reduce the
thermal resistance of the package as indicated in Table 1.

DD Package Heat Sinking

The underside of the DD package has exposed metal
(4mm2) from the lead frame where the die is attached. This
provides for the direct transfer of heat from the die
junction to printed circuit board metal to help control the
maximum operating junction temperature. The dual-in­line pin arrangement allows for extended metal beyond the
ends of the package on the topside (component side) of a

= (10 • 23mA) + (2.5)2/50
= 0.23 + 0.125 = 0.355W

D(MAX)

• 200°C/W)

PCB. Table 2 summarizes the thermal resistance from the
die junction-to-ambient that can be obtained using various
amounts of topside metal (2oz copper) area. On mulitlayer
boards, further reductions can be obtained using addi­tional metal on inner PCB layers connected through vias
beneath the package.

Table 2. LT6200 8-Lead DD Package

COPPER AREA

TOPSIDE (mm

2

) (JUNCTION-TO-AMBIENT)

4 160°C/W
16 135°C/W
32 110°C/W
64 95°C/W

130 70°C/W

THERMAL RESISTANCE

The LT6200 amplifier family has thermal shutdown to
protect the part from excessive junction temperature. The
amplifier will shut down to approximately 1.2mA supply
current per amplifier if the maximum temperature is
exceeded. The LT6200 will remain off until the junction
temperature reduces to about 135°C, at which point the
amplifier will return to normal operation.

PACKAGE DESCRIPTIO

3.5 ±0.05

1.65 ±0.05
(2 SIDES)2.15 ±0.05

0.28 ± 0.05

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

2.38 ±0.05

(2 SIDES)

0.50
BSC

U

DD Package

8-Lead Plastic DFN (3mm × 3mm)

(Reference LTC DWG # 05-08-1698)

0.675 ±0.05

PIN 1

PACKAGE
OUTLINE

TOP MARK

0.200 REF

NOTE:

1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1)

2. ALL DIMENSIONS ARE IN MILLIMETERS

3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

4. EXPOSED PAD SHALL BE SOLDER PLATED

3.00 ±0.10

(4 SIDES)

0.75 ±0.05

1.65 ± 0.10

(2 SIDES)

0.00 – 0.05

R = 0.115

TYP

0.28 ± 0.05

2.38 ±0.10

(2 SIDES)

BOTTOM VIEW—EXPOSED PAD

0.38 ± 0.10

85

14

0.50 BSC

(DD8) DFN 0203

62001fa

22

PACKAGE DESCRIPTIO

3.85 MAX

2.62 REF

0.62

MAX

0.95
REF

U

S6 Package

6-Lead Plastic TSOT-23

(Reference LTC DWG # 05-08-1636)

1.22 REF

1.50 – 1.75

1.4 MIN

2.80 BSC
(NOTE 4)

PIN ONE ID

LT6200/LT6200-5

LT6200-10/LT6201

2.90 BSC
(NOTE 4)

RECOMMENDED SOLDER PAD LAYOUT

PER IPC CALCULATOR

0.20 BSC

DATUM ‘A’

0.30 – 0.50 REF

NOTE:

1. DIMENSIONS ARE IN MILLIMETERS

2. DRAWING NOT TO SCALE

3. DIMENSIONS ARE INCLUSIVE OF PLATING

8-Lead Plastic Small Outline (Narrow .150 Inch)

.050 BSC

.245

MIN

0.95 BSC

0.80 – 0.90

1.00 MAX

0.09 – 0.20
(NOTE 3)

4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR

5. MOLD FLASH SHALL NOT EXCEED 0.254mm

6. JEDEC PACKAGE REFERENCE IS MO-193

1.90 BSC

S8 Package

(Reference LTC DWG # 05-08-1610)

.189 – .197

.045 ±.005

.160

±.005

.228 – .244

(5.791 – 6.197)

(4.801 – 5.004)

8

NOTE 3

7

5

6

.150 – .157

(3.810 – 3.988)

NOTE 3

0.30 – 0.45
6 PLCS (NOTE 3)

0.01 – 0.10

S6 TSOT-23 0302

.030 ±.005

TYP

RECOMMENDED SOLDER PAD LAYOUT

.010 – .020

(0.254 – 0.508)

.008 – .010

(0.203 – 0.254)

NOTE:

1. DIMENSIONS IN

2. DRAWING NOT TO SCALE

3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

× 45°

0°– 8° TYP

.016 – .050

(0.406 – 1.270)

INCHES

(MILLIMETERS)

.053 – .069

(1.346 – 1.752)

.014 – .019

(0.355 – 0.483)

TYP

1

3

2

4

.050

(1.270)

BSC

.004 – .010

(0.101 – 0.254)

SO8 0303

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23

LT6200/LT6200-5
LT6200-10/LT6201

TYPICAL APPLICATIO

U

Rail-to-Rail High Speed Low Noise Instrumentation Amplifier

150pF

49.9Ω

49.9Ω

+

LT6200-10

–

604Ω

604Ω

100Ω

1k

+

LT6200-10

–

–

LT6200-10

100Ω

+

AV = 13

Instrumentation Amplifier Frequency Response

42.3dB

49.9Ω

V

OUT

1k

AV = 10

6200 TA03

3dB/DIV

10 100

AV = 130

= 85MHz

BW

–3dB

SLEW RATE = 500V/µs
CMRR = 55dB at 10MHz

FREQUENCY (MHz) 6200 TA04

RELATED PARTS

PART NUMBER DESCRIPTION COMMENTS

LT1028 Single, Ultra Low Noise 50MHz Op Amp 1.1nV/√Hz
LT1677 Single, Low Noise Rail-to-Rail Amplifier 3V Operation, 2.5mA, 4.5nV/√Hz, 60µV Max V
LT1722/LT1723/LT1724 Single/Dual/Quad Low Noise Precision Op Amp 70V/µs Slew Rate, 400µV Max VOS, 3.8nV/√Hz, 3.7mA
LT1806/LT1807 Single/Dual, Low Noise 325MHz Rail-to-Rail Amplifier 2.5V Operation, 550µV Max VOS, 3.5nV/√Hz
LT6203 Dual, Low Noise, Low Current Rail-to-Rail Amplifier 1.9nV/√Hz, 3mA Max, 100MHz Gain Bandwidth

LT/TP 1103 1K REV A • PRINTED IN USA

 LINEAR TECHNOLOGY CORPORATIO N 2002

24

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

[phone] ● FAX: [phone] ● www.linear.com

0S

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