LINEAR TECHNOLOGY LT5522 Technical data

LO INPUT POWER (dBm)

–11

0

G

C

, SSB NF (dB), IIP3 (dBm)

4

8

12

16

–9 –7 –5 –3

5522 TA01

–1 1

20

IIP3

24

22

IF = 140MHz
LOW-SIDE LO
T

A

= 25°C

V

CC

= 5V

2

6

10

14

18

–70

–60

LO-RF LEAKAGE (dBm)

–50

–40

–30

–20

–10

SSB NF

LO-RF

FEATURES

■

Internal On-Chip RF Input Transformer

■

50Ω Single-Ended RF and LO Ports

■

High Input IP3: +25dBm at 900MHz

+21.5dBm at 1900MHz

■

Low Power Consumption: 280mW Typical

■

Integrated LO Buffer: Low LO Drive Level

■

High LO-RF and LO-IF Isolation

■

Wide RF Frequency Range: 0.4GHz to 2.7GHz*

■

Very Few External Components

■

Enable Function

■

4.5V to 5.25V Supply Voltage Range

■

16-Lead (4mm × 4mm) QFN Package

U

APPLICATIO S

■

Cellular, PCS and UMTS Band Infrastructure

■

CATV Downlink Infrastructure

■

2.4GHz ISM

■

High Linearity Downmixer Applications

LT5522

400MHz to 2.7GHz

High Signal Level

Downconverting Mixer

U

DESCRIPTIO

The LT®5522 active downconverting mixer is optimized for
high linearity downconverter applications including cable
and wireless infrastructure. The IC includes a high speed
differential LO buffer amplifier driving a double-balanced
mixer. The LO buffer is internally matched for wideband,
single-ended operation with no external components.

The RF input port incorporates an integrated RF trans­former and is internally matched over the 1.2GHz to 2.3GHz
frequency range with no external components. The RF
input match can be shifted down to 400MHz, or up to

2.7GHz, with a single shunt capacitor or inductor, respec­tively. The high level of integration minimizes the total
solution cost, board space and system-level variation.

The LT5522 delivers high performance and small size
without excessive power consumption.

, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance.
Consult factory for information and assistance.

TYPICAL APPLICATIO

1850MHz

TO

1910MHz

U

LO INPUT

–5dBm

–

+

LO

LT5522

+

RF

LNA

Figure 1. High Signal Level Downmixer for Wireless Infrastructure

RF

–

CONTROL

EN V

BIAS/

CC1

LO

+

IF

2.7pF

100pF

–

IF

V

CC2

0.01µF 3.3µF

150nH

150nH

140MHz

5V

(TYP)

VGA

LTC1748

ADC

5522 F01

1.9GHz Conversion Gain, IIP3, SSB

NF and LO-RF Leakage vs LO Power

5522fa

1

LT5522

PACKAGE/ORDER I FOR ATIO

UU

W

WWWU

ABSOLUTE AXI U RATI GS

(Note 1)

Supply Voltage ...................................................... 5.5V

Enable Voltage ............................... – 0.3V to V

LO Input Power ............................................... +10dBm

+

LO

to LO– Differential DC Voltage ......................... ±1V

LO Input DC Common Mode Voltage ...................... ±1V

RF Input Power ................................................ +10dBm

RF+ to RF– Differential DC Voltage ........................ ±0.2V

RF Input DC Common Mode Voltage ...................... ±1V

Operating Temperature Range ................ –40°C to 85°C

Storage Temperature Range ................. –65°C to 125°C

Junction Temperature (T

).................................... 125°C

J

+ 0.3V

CC

TOP VIEW

NC

LO+LO–NC

16 15 14 13

GND

1NC

+

RF

2

–

RF

3

NC

4

5 6 7 8

EN

16-LEAD (4mm × 4mm) PLASTIC QFN

EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB

UF PACKAGE

T

= 125°C, θJA = 37°C/W

JMAX

ORDER PART NUMBER

17

V

12

+

IF

11

–

IF

10

GND

9

NC

CC1

CC2

V

UF PART MARKING

LT5522EUF 5522

Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF

Lead Free Part Marking: http://www.linear.com/leadfree/

Consult LTC Marketing for parts specified with wider operating temperature ranges.

DC ELECTRICAL CHARACTERISTICS

(Test circuit shown in Figure 2) VCC = 5VDC, EN = high, TA = 25°C,

unless otherwise noted. (Note 3)

PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements (VCC)

Supply Voltage 4.5 5 5.25 VDC
Supply Current VCC = 5V 56 68 mA
Shutdown Current EN = Low 100 µA

Enable (EN) Low = Off, High = On

Input High Voltage (On) 3 VDC
Input Low Voltage (Off) 0.3 VDC
Enable Pin Input Current EN = 5VDC 55 75 µA
Turn On Time 3 µs
Turn Off Time 5 µs

AC ELECTRICAL CHARACTERISTICS

PARAMETER CONDITIONS MIN TYP MAX UNITS

RF Input Frequency Range Shunt Capacitor on Pin 3 (Low Band) 400 MHz

No External Matching (Mid Band) 1200 to 2300 MHz

Shunt Inductor on Pin 3 (High Band) 2700 MHz
LO Input Frequency Range No External Matching 400 2700 MHz
IF Output Frequency Range Requires Appropriate IF Matching 0.1 to 1000 MHz
RF Input Return Loss ZO = 50Ω 15 dB
LO Input Return Loss ZO = 50Ω 13 dB
IF Output Return Loss ZO = 50Ω 18 dB
LO Input Power –10 –5 0 dBm
RF to LO Isolation 50MHz to 2700MHz >45 dB

(Notes 2, 3) (Test circuit shown in Figure 2).

5522fa

2

LT5522

AC ELECTRICAL CHARACTERISTICS

= 25°C, PRF = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), fLO = fRF – 140MHz, PLO = –5dBm, IF output measured at

T

A

Cellular/PCS/UMTS downmixer application: VCC = 5V, EN = high,

140MHz, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2).

PARAMETER CONDITIONS MIN TYP MAX UNITS

Conversion Gain RF = 450MHz, High Side LO –2.0 dB

RF = 900MHz –0.5 dB

RF = 1800MHz –2 –0.2 dB

RF = 1900MHz –0.1 dB

RF = 2100MHz 0.2 dB

RF = 2450MHz –0.7 dB
Conversion Gain vs Temperature TA = –40° C to 85°C –0.02 dB/°C
Input 3rd Order Intercept RF = 450MHz, High Side LO 22.3 dBm

RF = 900MHz 25.0 dBm

RF = 1800MHz 21.8 dBm

RF = 1900MHz 21.5 dBm

RF = 2100MHz 20.0 dBm

RF = 2450MHz 16.8 dBm
Single Sideband Noise Figure (Note 4) RF = 900MHz 12.5 dB

RF = 1800MHz 13.9 dB

RF = 2100MHz 14.3 dB

RF = 2450MHz 15.6 dB
LO to RF Leakage fLO = 400MHz to 2700MHz ≤–50 dBm
LO to IF Leakage fLO = 400MHz to 2700MHz ≤–49 dBm
2RF-2LO Output Spurious Product (fRF = fLO + fIF/2) 900MHz: fRF = 830MHz at –12dBm –73 dBc

1900MHz: f
3RF-3LO Output Spurious Product (fRF = fLO + fIF/3) 900MHz: fRF = 806.67MHz at –12dBm –72 dBc

1900MHz: fRF = 1806.67MHz at –12dBm –65 dBc
Input 1dB Compression RF = 450MHz, High Side LO 12.0 dBm

RF = 900MHz 10.8 dBm

RF = 1900MHz 8.0 dBm

= 1830MHz at –12dBm –60 dBc

RF

1150MHz CATV infrastructure application: VCC = 5V, EN = high, TA = 25°C, RF input = 1150MHz at –12dBm (–12dBm/tone for 2-tone
IIP3 tests, ∆f = 1MHz), LO input swept from 1200MHz to 2200MHz, P

= –5dBm, IF output measured from 50MHz to 1050MHz unless

LO

otherwise noted. (Note 3) (Test circuit shown in Figure 3).

PARAMETER CONDITIONS MIN TYP MAX UNITS

Conversion Gain fLO = 1650MHz, fIF = 500MHz –0.6 dB
Input 3rd Order Intercept fLO = 1650MHz, fIF = 500MHz 23 dBm
Single Sideband Noise Figure (Note 4) fLO = 1650MHz, fIF = 500MHz 14.3 dB
LO to RF Leakage fLO = 1200MHz to 2200MHz ≤– 51 dBm
LO to IF Leakage fLO = 1200MHz to 2200MHz ≤– 45 dBm
2RF – LO Output Spurious Product PRF = –12dBm (Single Tone), 50MHz ≤ fIF ≤ 900MHz ≤ –63 dBc
2RF1 – LO Output Spurious Product 2 –68 dBc
2RF2 – LO Output Spurious Product –68 dBc
(RF1 + RF2) – LO Output Spurious Product –63 dBc
RF Input Return Loss 950MHz to 1350MHz, ZO = 50Ω >15 dB
LO Input Return Loss 1200MHz to 2200MHz, ZO = 50Ω 13 dB
IF Output Return Loss 50MHz to 1050MHz, ZO = 50Ω 10 dB

Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.

Note 2: 450MHz, 900MHz and 2450MHz performance measured with the
following external RF input matching. 450MHz: C5 = 8.2pF, 5mm away
from Pin 3 on the 50Ω input line. 900MHz: C5 = 2.2pF at Pin 3. 2450MHz:
L3 = 3.9nH at Pin 3. See Figure 2.

2-Tone 2nd Order Spurious Outputs

RF1 = 1147MHz, RF2 = 1153MHz, –15dBm/Tone

LO = 1650MHz, Spurs at 644MHz, 656MHz and 650MHz

Note 3: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.

Note 4: SSB Noise Figure measurements performed with a small-signal noise
source and bandpass filter on RF input, and no other RF signal applied.

5522fa

3

LT5522

WU

TYPICAL AC PERFOR A CE CHARACTERISTICS

V

= 5V, EN = High, TA = 25°C, PRF = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = –5dBm, IF output measured

CC

at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2).

Mid-band RF (no external RF matching)

Conv Gain, IIP3 and SSB NF
vs RF Frequency (Low Side LO)

23

21

19

17

15

13

TA = 25°C

11

= 140MHz

f

IF

9

7

5

AND SSB NF (dB), IIP3 (dBm)

C

G

3

1

–1

1300

1500

IIP3

SSB NF

G

C

1900

1700

RF FREQUENCY (MHz)

Conv Gain and IIP3
vs Temperature (RF = 1800MHz)

22

20

18

16

14

12

10

8

(dB), IIP3 (dBm)

C

6

G

4

2

0

= 140MHz

f

IF

–2

–50

–25

IIP3

G

LOW SIDE LO
HIGH SIDE LO

C

TEMPERATURE (°C)

LOW SIDE LO
HIGH SIDE LO

02550

2100

75 100

5522 G01

5522 G04

2300

Conv Gain, IIP3 and SSB NF
vs RF Frequency (High Side LO) LO Leakage vs LO Frequency

23

21

19

17

15

13

11

9

7

5

AND SSB NF (dB), IIP3 (dBm)

C

G

3

1

–1

1300

1500

IIP3

SSB NF

G

C

1900

1700

RF FREQUENCY (MHz)

Conv Gain, IIP3 and SSB NF
vs LO Power (RF = 1800MHz)

22

20

18

16

14

12

10

8

6

4

AND SSB NF (dB), IIP3 (dBm)

C

G

2

0

–2

–11

IIP3

SSB NF

G

C

–7 –5 –3

–9

LO INPUT POWER (dBm)

TA = 25°C

= 140MHz

f

IF

2100

f

= 1660MHz

LO

= 140MHz

f

IF

2300

5522 G02

25°C
85°C
–40°C

–1 1

5522 G05

–30

TA = 25°C

–35

= 140MHz

f

IF

–40

–45

–50

–55

–60

–65

–70

LO LEAKAGE (dBm)

–75

–80

–85

–90

1100

1300

LO-RF

LO-IF

1900

1700

1500

LO FREQUENCY (MHz)

Conv Gain and IIP3 vs Supply
Voltage (RF = 1800MHz)

22

20

18

16

14

12

10

8

(dB), IIP3 (dBm)

C

6

G

4

G

2

0

–2

4.5

IIP3

C

4.75
SUPPLY VOLTAGE (V)

5 5.25

2100

2300

5522 G03

25°C
85°C
–40°C

fLO = 1660MHz

= 140MHz

f

IF

5522 G06

2500

5.5

Conv Gain and IIP3
vs Temperature (RF = 2100MHz)

20

18

LOW SIDE LO

16

IIP3

14

12

10

8

(dB), IIP3 (dBm)

6

C

G

4

G

C

2

0

= 140MHz

f

IF

–2

–50

–25

HIGH SIDE LO

LOW SIDE LO
HIGH SIDE LO

02550

TEMPERATURE (°C)

4

75 100

5522 G07

Conv Gain, IIP3 and SSB NF
vs LO Power (RF = 2100MHz)

20

18

IIP3

16

14

12

10

8

6

4

AND SSB NF (dB), IIP3 (dBm)

G

C

C

2

G

0

–2

–11

–9

SSB NF

–7 –5 –3

LO INPUT POWER (dBm)

f

= 1960MHz

LO

= 140MHz

f

IF

25°C
85°C
–40°C

–1 1

5522 G08

IF OUT, 2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)

10

0

–10

–20

–30

–40

–50

–60

OUTPUT POWER (dBm)

–70

–80

–90

–21

IF OUT

(RF = 1900MHz)

(RF = 1806.67MHz)

–15–18

–9–12

RF INPUT POWER (dBm)

3RF-3LO

–3 0 6

–6

2RF-2LO
(RF = 1830MHz)

TA = 25°C

= 1760MHz

f

LO

= 140MHz

f

IF

3

5522 G09

5522fa

9

WU

TYPICAL AC PERFOR A CE CHARACTERISTICS

(L3 = 3.9nH) V
measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2).

= 5V, EN = High, TA = 25°C, PRF = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), PLO = –5dBm, IF output

CC

LT5522

Low-band RF (C5 = 2.2pF) and high-band RF

Low Band Conv Gain, IIP3 and
SSB NF vs RF Frequency

18

16

HIGH SIDE LO

14

12

10

8

(dB)

C

G

6

4

–2

2

0

600

TA = 25°C

= 140MHz

f

IF

HIGH SIDE LO

LOW SIDE LO

G

C

700

RF FREQUENCY (MHz)

800

LOW SIDE LO

900 1000

1100

Low Band Conv Gain, IIP3 and SSB
NF vs LO Power (RF = 900MHz)

17

15

13

11

9

7

(dB)

C

G

5

3

1

–1

–3

–11

SSB NF

G

C

–9

–7

LO INPUT POWER (dBm)

–5 –3

25°C
85°C
–40°C

fLO = 760MHz

= 140MHz

f

IF

–1

IIP3

SSB NF

5522 G10

IIP3

5522 G13

17

26

24

15

13

22

SSB NF (dB), IIP3 (dBm)

20

11

9

18

7

16

(dB)

C

G

5

14

3

12

1

–1

–3

SSB NF (dB), IIP3 (dBm)

LO LEAKAGE (dBm)

1200

1

10

8

6

26

24

22

20

18

16

14

12

10

8

6

Low Band Conv Gain and IIP3
vs Temperature (RF = 900MHz)

LOW SIDE LO

HIGH SIDE LO

G

C

fIF = 140MHz

–25

–50

LOW SIDE LO

HIGH SIDE LO

25 50

0

TEMPERATURE (°C)

75

LO Leakage vs LO Frequency
(Low Band RF Match)

–30

TA = 25°C

–35

= 140MHz

f

IF

= –5dBm

P

–40

LO

–45

–50

–55

–60

–65

–70

–75

–80

–85

–90

400

LO-IF

LO-RF

600

800

LO FREQUENCY (MHz)

1000

5522 G11

1200

IIP3

100

5522 G14

26

24

–10

22

–20

20

–30

IIP3 (dBm)

18

–40

16

–50

14

–60

12

–70

OUTPUT POWER (dBm)

10

–80

8

–90

6

–100

17

15

13

11

9

7

(dB)

C

G

5

3

1

–1

–3

1400

Low Band IF OUT, 2 × 2 and 3 × 3
Spurs vs RF Input Power (Single Tone)

10

0

IF OUT

(RF = 900MHz)

(RF = 806.67MHz)

–9

–15

–12–18

RF INPUT POWER (dBm)

3RF-3LO

–6

2RF-2LO
(RF = 830MHz)

–3

0

TA = 25°C

= 760MHz

f

LO

3

6

9

5522 G12

12

Low Band Conv Gain and IIP3 vs
Supply Voltage (RF = 900MHz)

IIP3

25°C
85°C
–40°C

fLO = 760MHz

= 140MHz

f

IF

G

C

4.5

4.75 5
SUPPLY VOLTAGE (V)

5.25

5.5

5522 G15

26

24

22

20

IIP3 (dBm)

18

16

14

12

10

8

6

High Band Conv Gain, IIP3, SSB NF
and LO Leakage vs RF Frequency

20

IIP3

18

16

14

12

10

8

6

4

AND SSB NF (dB), IIP3 (dBm)

C

2

G

0

–2

2200

SSB NF

LO-IF

G

C

2300

RF FREQUENCY (MHz)

2400

LO-RF

2500

TA = 25°C

= 140MHz

f

IF

LOW SIDE LO

2600

5522 G16

2700

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

–110

High Band Conv Gain and IIP3 vs
Temperature (RF = 2450MHz)

17

15

IIP3

13

LO LEAKAGE (dBm)

11

9

7

5

(dB), IIP3 (dBm)

C

G

3

G

1

–1

–3

–50

C

–25

fLO = 2310MHz
f

25 50

0

TEMPERATURE (°C)

= 140MHz

IF

High Band Conv Gain, IIP3 and SSB
NF vs LO Power (RF = 2450MHz)

18

IIP3

16

14

12

10

8

6

(dB), IIP3 (dBm)

C

G

4

2

G

C

0

100

–2

–11

–9

75

5522 G17

SSB NF

fLO = 2310MHz

= 140MHz

f

IF

–5 –3

–7

LO INPUT POWER (dBm)

25°C
85°C
–40°C

–1

5522 G18

20

19

18

17

16

15

14

13

12

11

10

1

5522fa

SSB NF (dB)

5