LINEAR TECHNOLOGY LT3782A Technical data

DESIGN IDEAS L
0.1µF
22pF
10Ω
30.9k
51.1k
220pF
6.8nF
15k
10Ω
V
CC1
V
EE1
BGATE1 BG1
BG2
GBIAS1
GBIAS2
BGATE2
V
EE2
GND
RUN
FB
V
C
GBIAS
SGATE1
SYNC
DELAY
DCL
SENSE1
+
SENSE1
+
SENSE1
SLOPE
R
SET
SENSE2
SENSE2
+
SS
SGATE2
SGATE1
SGATE2
SENSE1
SENSE2
+
SENSE2
SENSE2
+
LT3782A
SENSE2
475k 1%
53.6k 1%
4.7µF
L2
8.3µH
L1
8.3µH
2.2nF
2.2nF
1µF
PD3S160
DFLS160
1µF
0.01µF
825k
316k
Q6
Q1–Q6 = HAT2266
Q5
BG2BG2
0.008Ω0.008Ω
TG
TS
BST
GND
IN
V
CC
LTC4440-5
SGATE2
5V
SENSE1
SENSE1
+
Q3Q2
BG1BG1
0.008Ω0.008Ω
1µF
PD3S160
DFLS160
10µF s4
680µF
V
OUT
24V AT 8A
1µF
Q1
TG
TS
BST
GND
IN
V
CC
LTC4440-5
SGATE1
5V
10µF s4
V
IN
10V TO 14V
Q4
+
680µF
+
60.4k
4.7µF
High Power 2-Phase Synchronous Boost Replaces Hot Diodes with Cool FETs—No Heat Sinks Required
by Narayan Raja, Tuan Nguyen and Theo Phillips
Introduction
nous boost converter, with the diode replaced with a lower forward voltage drop switch, significantly improves ef­ficiency and relieves many issues with thermal layout. Although the topology is more complicated, Linear Technol-
ogy offers controller ICs that simplify the design of high power synchronous boost applications. The LT3782A boost controller, for instance, includes pre­drive outputs for external synchronous switch drivers. It also integrates strong
Figure 1. Compact high power boost application efficiently produces a 24V/8A output from a 10V–15V input.
Linear Technology Magazine • January 2009
3535
L DESIGN IDEAS
POWER LOSS (W)
EFFICIENCY (%)
LOAD CURRENT (A)
71
100
10
1
2
3 4
5 6
97
96
94
95
93
92
91
90
VIN = 12V
VIN = 12V
VIN = 24V
VIN = 24V
EFFICIENCY
POWER LOSS
Figure 2. Layout of the circuit in Figure 1. Note that no heat sinks are needed, even at the high power levels produced by this relatively compact circuit.
bottom switch drivers for high gate charge high voltage MOSFETs and uses a constant frequency, peak cur­rent mode architecture to produce high output voltages from 6V to 40V inputs. Its 2-phase architecture keeps external components small and low profile.
Synchronous Operation
At high current levels, a boost diode dissipates a significant amount of power, while a synchronous switch can burn far less. It all comes down to the forward voltage drop. The power dissipated in the boost diode is IIN • VD, while the power dissipated by the synchronous switch is I (or I
IN
• V
). A typical sub-10m
DS(ON)
MOSFET running 10A dissipates 1W, while the 0.5V drop of a typical
2
IN
• R
DS(ON)
.
Schottky diode burns a whopping 5W. Because the forward drop of a synchronous MOSFET is proportional to the current flowing through it, FETs can be paralleled to share current and drastically reduce power dissipation. On the other hand, paralleling boost diodes does little to reduce power dis­sipation as the forward drop through the diodes holds fairly constant. The non-synchronous boost diode topology is more than just inefficient relative to a synchronous solution—the extra heat generated in a boost diode must go somewhere, necessitating a larger package footprint and heat sinking. At high power levels, a non-synchronous boost application becomes larger in size and higher in cost over a syn­chronous solution.
Figure 3. Efficiency and power loss of the circuit in Figure 1 compared to the efficiency of the circuit when the synchronous FETs are replaced with non-synchronous boost diodes.
Multiphase Operation Reduces Application Size
There are a number of good reasons to choose a multiphase/multi-channel DC/DC converter over an equivalent single-phase solution, including reduced EMI and improved thermal performance, but the biggest advan­tage can be a significant reduction in application size. Although a 2-phase solution requires more components, two inductors and two MOSFETs in­stead of one, it offers a net reduction in space and cost. This is because the inductors and MOSFETs are more than proportionally smaller than those required in the single-phase solution. Moreover, because the switching sig­nals are mutually anti-phase, their output ripples tend to cancel each
continued on page 39
COOL FETs
a. Thermal image of the board in Figure 2 built up with synchronous FETs
Figure 4. The board in Figure 2 runs fairly cool (a), but when the synchronous FETs are replaced with boost diodes, the entire board heats up considerably with the diodes running significantly hotter than the FETs (b). (V
36
36
= 12V, I
IN
HOT DIODES HEAT UP THE WHOLE BOARD
b. Thermal image of the board in Figure 2 built up with boost diodes
= 6A, two minutes after power up.)
LOAD
Linear Technology Magazine • January 2009
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