Datasheet LT1880 Datasheet (LINEAR TECHNOLOGY)

FEATURES
LT1880
SOT-23, Rail-to-Rail Output,
Picoamp Input Current
Precision Op Amp
U
DESCRIPTIO
Offset Voltage: 150µV Max
Input Bias Current: 900pA Max
Offset Voltage Drift: 1.2µV/°C Max
Rail-to-Rail Output Swing
Operates with Single or Split Supplies
Open-Loop Voltage Gain: 1 Million Min
1.2mA Supply Current
Slew Rate: 0.4V/µs
Gain Bandwidth: 1.1MHz
Low Noise: 13nV/Hz at 1kHz
Low Profile (1mm) ThinSOT
TM
Package
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APPLICATIO S
Thermocouple Amplifiers
Bridge Transducer Conditioners
Instrumentation Amplifiers
Battery-Powered Systems
Photocurrent Amplifiers
U
TYPICAL APPLICATIO
The LT®1880 op amp brings high accuracy input perfor­mance and rail-to-rail output swing to the SOT-23 pack­age. Input offset voltage is trimmed to less than 150µV and the low drift maintains this accuracy over the operating temperature range. Input bias current is an ultra low 900pA maximum.
The amplifier works on any total power supply voltage between 2.7V and 36V (fully specified from 5V to ±15V). Output voltage swings to within 55mV of the negative supply and 250mV of the positive supply, which makes the amplifier a good choice for low voltage single supply operation.
Slew rates of 0.4V/µs with a supply current of 1.2mA give superior response and settling time performance in a low power precision amplifier.
The LT1880 is available in a 5-lead SOT-23 package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
Precision Photodiode Amplifier
C1
39pF
R1
100k, 1%
+
V
V
λ
S1
320µV OUTPUT OFFSET, WORST CASE OVER 0°C TO 70°C 60kHz BANDWIDTH
5.8µs RISE TIME, 10% TO 90%, 100mV OUTPUT STEP 52µV
OUTPUT NOISE, MEASURED ON A 100kHz BW
RMS
V
= ±1.5V TO ±18V
S
S1: SIEMENS INFINEON BPW21 PHOTODIODE (~580pF)
+
S
LT1880
V
S
V
OUT
OUT
= 0.1V/µA
1880 TA01
Distribution of Input Offset Voltage
35
30
25
20
15
10
PERCENT OF UNITS (%)
5
0 –140
–100 –60
INPUT OFFSET VOLTAGE (µV)
20 100 140
–20 60
1880 TA01b
1
LT1880
WW
W
ABSOLUTE AXI U RATI GS
U
UUW
PACKAGE/ORDER I FOR ATIO
(Note 1)
Supply Voltage (V+ to V–) ....................................... 40V
Differential Input Voltage (Note 2) ......................... ±10V
Input Voltage .................................................... V+ to V
Input Current (Note 2) ........................................ ±10mA
Output Short-Circuit Duration (Note 3)............ Indefinite
Operating Temperature Range (Note 4) .. –40°C to 85°C Specified Temperature Range (Note 5)... – 40°C to 85°C
Maximum Junction Temperature .......................... 150°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating
OUT 1
Consult LTC Marketing for parts specified with wider operating temperature ranges.
TOP VIEW
V
2
+IN 3
S5 PACKAGE
5-LEAD PLASTIC SOT-23
T
= 150°C, θJA = 250°C/W
JMAX
5 V
4 –IN
+
ORDER PART
NUMBER
LT1880CS5 LT1880IS5
S5 PART
MARKING
LTUM LTVW
temperature range, otherwise specifications are at TA = 25°C. VS = 5V, 0V; VCM = 2.5V unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
e
n
i
n
R
IN
C
IN
V
CM
CMRR Common Mode Rejection Ratio 1V < VCM < 3.8V 116 135 dB PSRR Power Supply Rejection Ratio V– = 0V, VCM = 1.5V; 2.7V < V+ < 32V 110 135 dB
A
VOL
V
OL
Input Offset Voltage 40 150 µV
0°C < T
< 70°C 200 µV
A
–40°C < T
Input Offset Voltage Drift 0°C < TA < 70°C 0.3 1.2 µV/°C (Note 6) –40°C < T
Input Offset Current 150 900 pA
0°C < T –40°C < T
Input Bias Current 150 900 pA
0°C < T
–40°C < T Input Noise Voltage 0.1Hz to 10Hz 0.5 µV Input Noise Voltage Density f = 1kHz 13 nV/√Hz Input Noise Current Density f = 1kHz 0.07 pA/√Hz Input Resistance Differential 380 M
Common Mode, V Input Capacitance 3.7 pF Input Voltage Range (V– + 1.0) (V+ – 1.2) V
Minimum Operating Supply Voltage 2.4 2.7 V Large Signal Voltage Gain RL = 10k; 1V < V
R
L
R
L
Output Voltage Swing Low No Load 20 55 mV
I
SINK
I
SINK
< 85°C 250 µV
A
< 85°C 0.3 1.2 µV/°C
A
< 70°C 1200 pA
A
< 85°C 1400 pA
A
< 70°C 1200 pA
A
< 85°C 1500 pA
A
= 1V to 3.8V 210 G
CM
< 4V 500 1600 V/mV
OUT
= 2k; 1V < V
= 1k; 1V < V
= 100µA 35 65 mV = 1mA 130 200 mV
< 4V 400 800 V/mV
OUT
< 4V 300 400 V/mV
OUT
400 V/mV
300 V/mV
250 V/mV
P-P
2
LT1880
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = 5V, 0V; VCM = 2.5V unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OH
I
S
I
SC
GBW Gain-Bandwidth Product f = 20kHz 0.8 1.1 MHz t
S
FPBW Full Power Bandwidth (Note 7) V THD Total Harmonic Distortion and Noise VO = 2V
+
SR
SR
Output Voltage Swing High V+ = 5V; No Load 130 250 mV (Referred to V
+
)V
+
= 5V; I
+
= 5V; I
V
= 100µA 150 270 mV
SOURCE
= 1mA 220 380 mV
SOURCE
Supply Current per Amplifier V+ = 3V 1.2 1.8 mA
2.2 mA
V+ = 5V 1.2 1.9 mA
2.3 mA
V+ = 12V 1.35 2 mA
2.4 mA
Short-Circuit Current V
Settling Time 0.01%, V
Short to GND 10 18 mA
OUT
Short to V
V
OUT
= –1, RL = 2k
A
V
= 4V
OUT
= 2V
V
O
+
= 1.5V to 3.5V 10 µs
OUT
P-P
, AV = –1, f = 1kHz, Rf = 1k, BW = 22kHz 0.002 %
P-P
, AV = 1, f = 1kHz, RL = 10k, BW = 22kHz 0.0008 %
P-P
10 20 mA
32 kHz
Slew Rate Positive AV = –1 0.25 0.4 V/µs
0.2 V/µs
Slew Rate Negative AV = –1 0.25 0.55 V/µs
0.25 V/µs
The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS= ±15V, VCM = 0V unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
I
OS
I
B
e
n
i
n
R
IN
C
IN
V
CM
CMRR Common Mode Rejection Ratio –13.5V < VCM < 13.5V 118 135 dB +PSRR Positive Power Supply Rejection Ratio V– = –15V, VCM = 0V; 1.5V < V+ < 18V 110 135 dB –PSRR Negative Power Supply Rejection Ratio V+ = 15V, VCM = 0V; –1.5V < V– < –18V 110 135 dB
Input Offset Voltage 40 150 µV
0°C < T
< 70°C 200 µV
A
–40°C < T
< 85°C 250 µV
A
Input Offset Voltage Drift 0°C < TA < 70°C 0.3 1.2 µV/°C (Note 6) –40°C < T
< 85°C 0.3 1.2 µV/°C
A
Input Offset Current 150 900 pA
< 70°C 1200 pA
0°C < T
A
–40°C < T
< 85°C 1400 pA
A
Input Bias Current 150 900 pA
< 70°C 1200 pA
0°C < T
A
–40°C < T Input Noise Voltage 0.1Hz to 10Hz 0.5 µV
< 85°C 1500 pA
A
P-P
Input Noise Voltage Density f = 1kHz 13 nV/√Hz Input Noise Current Density f = 1kHz 0.07 pA/√Hz Input Resistance Differential 380 M
Common Mode, V
= –13.5V to 13.5V 190 G
CM
Input Capacitance 3.7 pF Input Voltage Range –13.5 13.5 V
Minimum Operating Supply Voltage ±1.2 ±1.35 V
3
LT1880
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = ±15V; VCM = 0V unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
A
VOL
V
OL
V
OH
I
S
I
SC
FPBW Full Power Bandwidth (Note 7) V GBW Gain Bandwidth Product f = 20kHz 0.8 1.1 MHz THD Total Harmonic Distortion and Noise VO = 25V
+
SR
SR
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
Note 2: The inputs are protected by back-to-back diodes. If the differential input voltage exceeds 10V, see Application Information, the input current should be limited to less than 10mA.
Note 3: A heat sink may be required to keep the junction temperature below absolute maximum ratings.
Note 4: The LT1880C and LT1880I are guaranteed functional over the operating temperature range of –40°C to 85°C.
Large Signal Voltage Gain RL = 10k; –13.5V < V
R
= 2k; –13.5V < V
L
< 13.5V 1000 1600 V/mV
OUT
< 13.5V 500 1000 V/mV
OUT
700 V/mV
300 V/mV
Output Voltage Swing Low No Load 25 65 mV (Referred to V
)I
EE
= 100µA 35 75 mV
SINK
= 1mA 130 200 mV
I
SINK
Output Voltage Swing High No Load 185 350 mV (Referred to V
)I
CC
= 100µA 195 370 mV
SOURCE
= 1mA 270 450 mV
I
SOURCE
Supply Current per Amplifier 1.5 2.3 mA
1.8 2.8 mA
Short-Circuit Current V
OUT
V
OUT
OUT
V
O
= 25V
Short to V
Short to V
= 14V
+
P-P
, AV = –1, f = 100kHz, Rf = 10k, BW = 22kHz 0.00029 %
P-P
, AV = 1, f = 100kHz, RL = 10k, BW = 22kHz 0.00029 %
P-P
10 25 mA
10 25 mA
10 20 mA
10 20 mA
9kHz
Slew Rate Positive AV = –1 0.25 0.4 V/µs
0.2 V/µs
Slew Rate Negative AV = –1 0.25 0.55 V/µs
0.2 V/µs
Note 5: The LT1880C is guaranteed to meet specified performance from 0°C to 70°C and is designed, characterized and expected to meet specified performance from –40°C to 85°C but is not tested or QA sampled at these temperatures. The LT1880I is guaranteed to meet specified performance from –40°C to 85°C.
Note 6: This parameter is not 100% tested. Note 7: Full power bandwidth is calculated from the slew rate.
FPBW = SR/(2πVP)
4
UW
TYPICAL PERFOR A CE CHARACTERISTICS
LT1880
Input Offset Voltage vs Temperature
200
TEMPCO: –55°C TO 125°C 10 REPRESENTATIVE UNITS
150
100
50
0
–50
–100
INPUT OFFSET VOLTAGE (µV)
–150
–200
–55 –35
–15 105
255
TEMPERATURE (°C)
Input Bias Current vs Common Mode Near V
1000
500
0
–500
INPUT BIAS CURRENT (pA)
–1000
–14.6
EE
I
B
+
I
B
–14.2
COMMON MODE VOLTAGE (V)
–13.8
856545
VS = ±15V
TA = –40°C
= 25°C
T
A
= 85°C
T
A
–13.4
1880 G01
1880 G02B
125
–13.0
Input Bias Current vs Common Mode Voltage
1000
800 600 400 200
–200 –400
INPUT BIAS CURRENT (pA)
–600 –800
–1000
0
–15
TA = 25°C T
= –40°C
A
T
= 85°C
A
VS = ±15V
–10
–5
COMMON MODE VOLTAGE (V)
I
B
+
I
B
05
Input Bias Current vs Temperature
200
VS = ±15V
150 100
50
0
–50 –100 –150
INPUT BIAS CURRENT (pA)
–200 –250 –300
–50
–25
TEMPERATURE (°C)
0
I
B
+
I
B
25 50
Input Bias Current vs Common Mode Near V
1000
500
0
–500
INPUT BIAS CURRENT (pA)
–1000
15
10
1880 G02
13.0
CC
I
B
+
I
B
13.4
COMMON MODE VOLTAGE (V)
13.8
VS = ±15V
TA = –45°C T
A
T
A
14.2
= 25°C = 85°C
14.6
1880 G02A
Output Voltage Swing vs Load Current
TA = 85°C
TA = 25°C
2–8 –4 0 4 86
TA = –40°C
10
1880 G04
)
–0.5
+
–1.0
SWING (V
–1.5
OUTPUT VOLTAGE
1.5
1.0
0.5
–10
TA = 25°C
TA = 85°C
TA = –40°C
–6
OUTPUT CURRENT (mA)
–2
)
SWING (V
OUTPUT VOLTAGE
100
75
1880 G03
Warm Up Drift
6
TA = 25°C
5
4
3
2
OFFSET VOLTAGE CHANGE (µV)
1
0
0
VS = ±15V
VS = ±2.5V
1234
TIME AFTER POWER ON (MIN)
1880 G05
en, in vs Frequency 0.1 to 10Hz Noise
1000
CURRENT NOISE
100
VOLTAGE NOISE
10
CURRENT NOISE DENSITY (fA/Hz)
VOLTAGE NOISE DENSITY (nV/Hz)
5
1
1
10 100 1k
FREQUENCY (Hz)
VS = ±15V
= 25°C
T
A
1880 G08
NOISE VOLTAGE (0.2µV/DIV)
VS = ±15V
= 25°C
T
A
2
0
4
TIME (SEC)
6
8
10
1880 G09a
5
LT1880
UW
TYPICAL PERFOR A CE CHARACTERISTICS
0.01 to 1Hz Noise
NOISE VOLTAGE (0.2µV/DIV)
20
0
40 TIME (SEC)
60
CMRR vs Frequency
160
140
120
100
80
60
40
20
POWER SUPPLY REJECTION RATIO (dB)
0
1
100 1k 10k 100k 1M
10
FREQUENCY (Hz)
VS = ±15V
= 25°C
T
A
80
1880 G09b
VS = ±15V
1880 G12
100
Gain vs Frequency
140
120
100
80
60
40
GAIN (dB)
20
0
–20
–40
0.1
10
1 10M
100 1k 10k
FREQUENCY (Hz)
Gain and Phase vs Frequency
70 60 50 40 30 20 10
VOLTAGE GAIN (dB)
0
–10 –20 –30
10k
PHASE SHIFT
GAIN
100k 1M 10M
FREQUENCY (Hz)
VS = ±15V
100k
VS = ±15V
1880 G13
1M
1880 G10
100 80 60 40 20 0 –20 –40 –60 –80 –100
PSRR vs Frequency
160
140
120
100
80
60
40
20
POWER SUPPLY REJECTION RATIO (dB)
0
0.1 1
10
Settling Time vs Output Step
10
VS = ±15V
8
= –1
A
V
PHASE SHIFT (DEG)
6 4 2 0
–2
OUTPUT STEP (V)
–4 –6 –8
–10
0
515
0.1%
10
SETTLING TIME (µs)
VS = ±15V
–PSRR
+PSRR
100 1k 10k 100k 1M
FREQUENCY (Hz)
0.1%
0.01%
0.01%
20
30
25
35
1880 G11
40
1880 G14
Settling Time vs Output Step
10
VS = ±15V
8
= 1
A
V
6 4 2 0
–2
OUTPUT STEP (V)
–4 –6 –8
–10
0
0.1%
0.1%
10
515
SETTLING TIME (µs)
6
20
0.01%
0.01%
Slew Rate, Gain-Bandwidth Product and Phase Margin vs Temperature
0.5 VS = ±15V
0.4
SLEW RATE (V/µs)
0.3
1.14
1.12
PRODUCT (MHz)
GAIN BANDWIDTH
1.10
35
30
25
1880 G15
–50
GBW
–25
0
TEMPERATURE (°C)
SLEW RATE
Φ
M
25 50
PHASE MARGIN (DEG)
68
64
60
100
75
1880 G16
Slew Rate, Gain-Bandwidth Product and Phase Margin vs Power Supply
0.5 TA = 25°C
0.4
0.3
1.12
1.11
PRODUCT (MHz) SLEW RATE (V/µs)
GAIN BANDWIDTH
1.10 0
2.5
GBW
SLEW RATE
5
POWER SUPPLY (±V)
Φ
M
7.5 10
12.5
64
60
56
15
1880 G17
PHASE MARGIN (DEG)
UW
TYPICAL PERFOR A CE CHARACTERISTICS
LT1880
Gain vs Frequency with C
10
0
–10
GAIN (dB)
–20
–30
–40
1k 1M
, AV = –1
LOAD
FREQUENCY (Hz)
0pF
Total Harmonic Distortion + Noise vs Frequency
10
VS = 5V, 0V V
= 2.5V
CM
= RG = 1k
R
f
1.0
0.1
= 2V
V
OUT
RL = 10k
P-P
1000pF
500pF
100M10k 100k 10M
1880 G18
Gain vs Frequency with C
10
0
–10
GAIN (dB)
–20
–30
–40
LOAD
1k 1M
Small Signal Response
V
OUT
(20mV/DIV)
, AV = 1
0pF
FREQUENCY (Hz)
1000pF
500pF
1880 G19
Output Impedance vs Frequency
100
VS = ±15V
10
AV = 100
1.0
0.1
OUTPUT IMPEDANCE ()
100M10k 100k 10M
0.01
0.01 1.0 10 100
AV = 10
AV = 1
0.1 FREQUENCY (MHz)
1880 G17A
Small Signal Response
V
OUT
(20mV/DIV)
0.01
THD + NOISE (%)
0.001
0.0001 10 1k 10k 100k
AV = –1
AV = 1
100
FREQUENCY (Hz)
Small Signal Response
V
OUT
(20mV/DIV)
AV = 1
= 500pF
C
L
TIME (2µs/DIV)
1880 G17B
1880 G22
AV = –1 NO LOAD
Large Signal Response
V
OUT
(5V/DIV)
AV = –1
TIME (2µs/DIV)
TIME (50µs/DIV)
1880 G20
1880 G23
AV = 1 NO LOAD
Large Signal Response
V
OUT
(5V/DIV)
AV = 1
TIME (2µs/DIV)
TIME (50µs/DIV)
1880 G21
1880 G24
7
LT1880
WUUU
APPLICATIO S I FOR ATIO
The LT1880 single op amp features exceptional input precision with rail-to-rail output swing. Slew rate and small signal bandwidth are superior to other amplifiers with comparable input precision. These characteristics make the LT1880 a convenient choice for precision low voltage systems and for improved AC performance in higher voltage precision systems. Obtaining beneficial advantage of the precision inherent in the amplifier de­pends upon proper applications circuit design and board layout.
Preserving Input Precision
Preserving the input voltage accuracy of the LT1880 requires that the applications circuit and PC board layout do not introduce errors comparable to or greater than the 40µV offset. Temperature differentials across the input connections can generate thermocouple voltages of 10’s of microvolts. PC board layouts should keep connections to the amplifier’s input pins close together and away from heat dissipating components. Air currents across the board can also generate temperature differentials.
The extremely low input bias currents, 150pA, allow high accuracy to be maintained with high impedance sources and feedback networks. The LT1880’s low input bias currents are obtained by using a cancellation circuit on­chip. This causes the resulting I
BIAS
+
and I
BIAS
to be uncorrelated, as implied by the lOS specification being comparable to I
. The user should not try to balance the
BIAS
input resistances in each input lead, as is commonly recommended with most amplifiers. The impedance at either input should be kept as small as possible to mini­mize total circuit error.
PC board layout is important to insure that leakage cur­rents do not corrupt the low I
of the amplifier. In high
BIAS
precision, high impedance circuits, the input pins should be surrounded by a guard ring of PC board interconnect, with the guard driven to the same common mode voltage as the amplifier inputs.
Input Common Mode Range
The LT1880 output is able to swing nearly to each power supply rail, but the input stage is limited to operating between V
+ 1V and V+ – 1.2V. Exceeding this common
mode range will cause the gain to drop to zero, however no gain reversal will occur.
Input Protection
The inverting and noninverting input pins of the LT1880 have limited on-chip protection. ESD protection is pro­vided to prevent damage during handling. The input tran­sistors have voltage clamping and limiting resistors to protect against input differentials up to 10V. Short tran­sients above this level will also be tolerated. If the input pins can see a sustained differential voltage above 10V, external limiting resistors should be used to prevent damage to the amplifier. A 1k resistor in each input lead will provide protection against a 30V differential voltage.
Capacitive Loads
The LT1880 can drive capacitive loads up to 600pF in unity gain. The capacitive load driving capability increases as the amplifier is used in higher gain configurations, see the graph labled Capacitive Load Response. Capacitive load driving may be increased by decoupling the capacitance from the output with a small resistance.
Capacitance Load Response
30
VS = ±15V
= 25°C
T
A
25
20
15
OVERSHOOT (%)
10
5
0
10 100 1000 10000
AV = 1
AV = 10
CAPACITIVE LOAD (pF)
1880 G25
Getting Rail-to-Rail Operation without Rail-to-Rail Inputs
The LT1880 does not have rail-to-rail inputs, but for most inverting applications and noninverting gain applications, this is largely inconsequential. Figure 1 shows the basic op amp configurations, what happens to the op amp inputs, and whether or not the op amp must have rail-to-rail inputs.
8
WUUU
APPLICATIO S I FOR ATIO
LT1880
V
REF
R
V
G
IN
INVERTING: AV = –RF/R OP AMP INPUTS DO NOT MOVE, BUT ARE FIXED AT DC BIAS POINT V
INPUT DOES NOT HAVE TO BE RAIL-TO-RAIL
+
REF
R
F
G
V
IN
+
R
G
V
REF
NONINVERTING: AV = 1 + RF/R INPUTS MOVE BY AS MUCH AS
, BUT THE OUTPUT MOVES
V
IN
MORE
INPUT MAY NOT HAVE TO BE RAIL-TO-RAIL
Figure 1. Some Op Amp Configurations Do Not Require Rail-to Rail Inputs to Achieve Rail-to-Rail Outputs
The circuit of Figure 2 shows an extreme example of the inverting case. The input voltage at the 1M resistor can swing ±13.5V and the LT1880 will output an inverted, divided-by-ten version of the input voltage. The input accuracy is limited by the resistors to 0.2%. Output referred, this error becomes 2.7mV. The 40µV input offset voltage contribution, plus the additional error due to input bias current times the ~100k effective source impedance, contribute only negligibly to error.
V
IN
+
R
F
G
NONINVERTING: AV = +1 INPUTS MOVE AS MUCH AS OUTPUT
INPUT MUST BE RAIL-TO­RAIL FOR OVERALL CIRCUIT RAIL-TO-RAIL PERFORMANCE
Precision Photodiode Amplifier
Photodiode amplifiers usually employ JFET op amps be­cause of their low bias current; however, when precision is required, JFET op amps are generally inadequate due to their relatively high input offset voltage and drift. The LT1880 provides a high degree of precision with very low bias current (IB = 150pA typical) and is therefore appli­cable to this demanding task. Figure 3 shows an LT1880 configured as a transimpedance photodiode amplifier.
±13.5V SWINGS
WELL OUTSIDE
SUPPLY RAILS
1.5V
±1.35V OUTPUT SWING
+
LT1880
V
IN
1M, 0.1%
100k, 0.1%
–1.5V
Figure 2. Extreme Inverting Case: Circuit Operates Properly with Input Voltage Swing Well Outside Op Amp Supply Rails.
C
F
WORST-CASE OUTPUT OFFSET
196µV AT 25°C262µV 0°C TO 70°C323µV –40°C TO 85°C
PHOTODIODE
(SEE TEXT)
C
D
RF 51.1k
5V
LT1880
+
–5V
Figure 3. Precision Photodiode Amplifier
OUT
9
LT1880
WUUU
APPLICATIO S I FOR ATIO
The transimpedance gain is set to 51.1k by RF. The feedback capacitor, CF, may be as large as desired where response time is not an issue, or it may be selected for maximally flat response and highest possible bandwidth given a photodiode capacitance CD. Figure 4 shows a chart of CF and rise time versus CD for maximally flat response. Total output offset is below 262µV, worst-case, over temperature (0°C–70°C). With a 5V output swing, this guarantees a minimum 86dB dynamic range over temperature (0°C–70°C), and a full-scale photodiode current of 98µA.
Single-Supply Current Source for Platinum RTD
The precision, low bias current input stage of the LT1880 makes it ideal for precision integrators and current sources. Figure 5 shows the LT1880 providing a simple precision current source for a remote 1k RTD on a 4-wire
100
C
RISE TIME
F
100mV OUTPUT STEP
(pF)
C
D
D
(pF)
10
F
1
RISE TIME (µs), C
0.1
0.1 1 10 100 1000
Figure 4. Feedback CF and Rise Time vs Photodiode C
connection. The LT1634 reference places 1.25V at the noninverting input of the LT1880, which then maintains its inverting input at the same voltage by driving 1mA of current through the RTD and the total 1.25k of resis­tance set by R1 and R2. Imprecise components R4 and C1 ensure circuit stability, which would otherwise be exces­sively dependant on the cable characteristics. R5 is also noncritical and is included to improve ESD immunity and decouple any cable capacitance from the LT1880’s output. The 4-wire cable allows Kelvin sensing of the RTD voltage while excluding the cable IR drops from the voltage reading. With 1mA excitation, a 1k RTD will have 1V across it at 0°C, and +3.85mV/°C temperature response. This voltage can be easily read in myriad ways, with the best method depending on the temperature region to be emphasized and the particular ADC that will be reading the voltage.
R5
180, 5%
+
= 1.00V AT 0°C + 3.85mV/°C
V
OUT
1k
AT 0°C
RTD*
C1
R4
1k, 5%
R1
1.24K
0.1%
R2 10 1%
*OMEGA F3141 1k, 0.1% PLATINUM RTD (800) 826-6342
0.1µF
LT1880
+
R3
150k, 1%
LT1634ACS8
-1.25
5V
–50°C TO 600°C
5V
10
Figure 5. Single Supply Current Source for Platinum RTD
WW
SI PLIFIED SCHE ATIC
+
5
V
LT1880
R3 R4 R27
Q41
Q38
Q3
Q59
V
21µA
–IN
+IN
Q58
R1
500
4
3
R2
500
2
V
Q1 Q2 Q45
PACKAGE DESCRIPTIO
A
A1
A2
L
SOT-23
(Original)
.90 – 1.45
(.035 – .057)
.00 – .15
(.00 – .006)
.90 – 1.30
(.035 – .051)
.35 – .55
(.014 – .021)
SOT-23
(ThinSOT)
1.00 MAX
(.039 MAX)
.01 – .10
(.0004 – .004)
.80 – .90
(.031 – .035) .30 – .50 REF
(.012 – .019 REF)
Q4
Q46
CX1
C B
A
Q47
100µA
B A
Q48
Q16
7µA10µA
Q7
Q44
U
S5 Package
5-Lead Plastic SOT-23
(Reference LTC DWG # 05-08-1633) (Reference LTC DWG # 05-08-1635)
2.60 – 3.00
(.102 – .118)
1.50 – 1.75
(.059 – .069)
(NOTE 3)
PIN ONE
R5
Q6
CM1
Q12
RCM1
35µA
CM2
RCM2
Q14
R22 500
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE
4. DIMENSIONS ARE INCLUSIVE OF PLATING
5. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
6. MOLD FLASH SHALL NOT EXCEED .254mm
7. PACKAGE EIAJ REFERENCE IS:
SC-74A (EIAJ) FOR ORIGINAL JEDEL MO-193 FOR THIN
Q5
Q8
2.80 – 3.10
(.110 – .118)
(NOTE 3)
Q24Q23
CM3
Q20
R38
1880 SD
MILLIMETERS
(INCHES)
OUT
1
.20
(.008)
DATUM ‘A’
.95
(.037)
REF
A2
A
L
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
.09 – .20
(.004 – .008)
(NOTE 2)
1.90
(.074)
REF
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
.25 – .50
(.010 – .020)
(5PLCS, NOTE 2)
A1
S5 SOT-23 0401
11
LT1880
TYPICAL APPLICATIO
U
All SOT-23 JFET Input Transimpedance Photodiode Amplifier
C4
1.2pF
+
V
R5
100k, 1%
1k TIME DOMAIN RESPONSE TRIM
J1
R2
220k, 5%
C1
0.01µF
R1
220k, 5%
S1
+
LT1880
U1
C2
0.1µF
0.01µF
R7 47
R3 10k 5%
C3
5%
N1
R6 47 5%
V
C5
1.2pF
U2
LT1806
+
J1: ON SEMI MMBF4416 JFET N1:ON SEMI MMBT3904 NPN S1: SIEMENS/INFINEON SFH213FA PHOTODIODE (~3pF)
= ±5V
V
SUPPLY
BANDWIDTH = 7MHz NOISE FIGURE = 2dB AT 100kHz, 25°C
= 100k
A
Z
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LT1782 Rugged, General Purpose SOT-23 Op Amp Rail-to-Rail I/O LT1792 Low Noise JFET Op Amp 4.2nV/√Hz LT1881/LT1882 Dual/Quad Precision Op Amps 50µV V LTC2050 Zero Drift Op Amp in SOT-23 3µV V
OS(MAX)
OS(MAX)
V
OUT
, 200pA I
Rail-to-Rail Output
B(MAX)
, Rail-to-Rail Output
1880 TA02
12
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
www.linear.com
1880f LT/TP 0801 2K • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 2001
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