Linear Technology LT1792 Datasheet

FEATURES
LT1792
Low Noise, Precision,
JFET Input Op Amp
U
DESCRIPTIO
100% Tested Low Voltage Noise: 6nV/Hz Max
A Grade 100% Temperature Tested
Voltage Gain: 1.2 Million Min
Offset Voltage Over Temp: 800µV Max
Gain-Bandwidth Product: 5.6MHz Typ
Guaranteed Specifications with ±5V Supplies
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APPLICATIO S
Photocurrent Amplifiers
Hydrophone Amplifiers
High Sensitivity Piezoelectric Accelerometers
Low Voltage and Current Noise Instrumentation Amplifier Front Ends
Two and Three Op Amp Instrumentation Amplifiers
Active Filters
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TYPICAL APPLICATIO
The LT®1792 achieves a new standard of excellence in noise performance for a JFET op amp. The 4.2nV/Hz voltage noise combined with low current noise and picoampere bias currents make the LT1792 an ideal choice for amplifying low level signals from high impedance capacitive transducers.
The LT1792 is unconditionally stable for gains of 1 or more, even with load capacitances up to 1000pF. Other key features are 600µV VOS and a voltage gain of over 4 million. Each individual amplifier is 100% tested for voltage noise, slew rate and gain bandwidth.
The design of the LT1792 has been optimized to achieve true precision performance with an industry standard pinout in the SO-8 package. Specifications are also pro­vided for ±5V supplies.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Low Noise Hydrophone Amplifier with DC Servo
2
3
–5V TO –15V
R8 100M
R7 1M
< 70°C
A
5V TO 15V
LT1792
+
R6
100k
7
6
4
C2
0.47µF
6
LT1097
R1* 100M
R2 200
HYDRO-
PHONE
DC OUTPUT 2.5mV FOR T OUTPUT VOLTAGE NOISE = 128nV/Hz AT 1kHz (GAIN = 20) C1 ≈ C
T
R3
3.9k
C1*
C
T
100pF TO 5000pF; R4C2 > R8CT; *OPTIONAL
1kHz Input Noise Voltage Distribution
VS = ±15V
40
= 25°C
T
A
OUTPUT
R4 1M
2
R5 1M
3
+
1792 TA01
30
20
PERCENT OF UNITS (%)
10
0
3.8 4.2
3.6
4.0
INPUT VOLTAGE NOISE (nV/Hz)
270 OP AMPS TESTED
5.0
4.6 5.6
4.8
4.4
5.2
5.4
1792 TA02
1
LT1792
A
W
O
LUTEXI TIS
S
A
WUW
U
ARB
G
(Note 1)
Supply Voltage ..................................................... ±20V
Differential Input Voltage ...................................... ±40V
Input Voltage (Equal to Supply Voltage)............... ±20V
Output Short-Circuit Duration ........................ Indefinite
Operating Temperature Range............... –40°C to 85°C
WU
/
PACKAGE
VOS ADJ
–IN A +IN A
V
JMAX
O
RDER I FOR ATIO
TOP VIEW
1 2
A
3 4
N8 PACKAGE 8-LEAD PDIP
= 140°C, θJA = 130°C/W
ORDER PART
NUMBER
NC
8
+
V
7
OUT
6
ADJ
V
5
OS
LT1792ACN8 LT1792CN8 LT1792AIN8 LT1792IN8
Specified Temperature Range
Commercial (Note 8) ......................... –40°C to 85°C
Industrial ........................................... –40°C to 85°C
Storage Temperature Range................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ................ 300°C
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ORDER PART
NUMBER
LT1792ACS8 LT1792CS8 LT1792AIS8 LT1792IS8
S8 PART MARKING
1792A 1792
VOS ADJ
–IN A +IN A
TOP VIEW
1
2
3
V
4
S8 PACKAGE
8-LEAD PLASTIC SO
T
= 160°C, θJA = 190°C/WT
JMAX
NC
8
V+
A
7
OUT
6
ADJ
V
5
OS
1792AI 1792I
Consult factory for Military grade parts.
LECTRICAL C CHARA TERIST
E
SYMBOL PARAMETER CONDITIONS (Note 2) MIN TYP MAX MIN TYP MAX UNITS
V
OS
I
OS
I
B
e
n
i
n
R
IN
C
IN
V
CM
CMRR Common Mode Rejection Ratio V PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V 88 105 83 98 dB
Input Offset Voltage 0.2 0.6 0.2 0.8 mV
V
S
Input Offset Current Warmed Up (Note 3) 100 400 100 400 pA Input Bias Current Warmed Up (Note 3) 300 800 300 800 pA Input Noise Voltage 0.1Hz to 10Hz 2.4 2.4 µV Input Noise Voltage Density fO = 10Hz 8.3 8.3 nV/√Hz
f
O
Input Noise Current Density fO = 10Hz, fO = 1000Hz (Note 4) 10 10 fA/√Hz Input Resistance
Differential Mode 10 Common Mode V
Input Capacitance 14 14 pF
Input Voltage Range (Note 5) 13.0 13.5 13.0 13.5 V
CM
V
CM
V
S
CM
ICS
T
= 25°C, VS = ±15V, V
A
= ±5V 0.4 1.0 0.4 1.3 mV
= 1000Hz 4.2 6.0 4.2 6.0 nV/√Hz
= –10V to 8V 10 = 8V to 11V 10
= ±5V 27 27 pF
–10.5 –11.0 –10.5 –11.0 V
= –10V to 13V 85 105 82 100 dB
= 0V, unless otherwise noted. (Note 9)
CM
LT1792AC/LT1792AI
11 11 10
LT1792C/LT1792I
10 10 10
P-P
11 11 10
Ω Ω Ω
2
LECTRICAL C CHARA TERIST
E
ICS
T
= 25°C, VS = ±15V, V
A
= 0V, unless otherwise noted.
CM
LT1792
LT1792AC/LT1792AI
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
A
VOL
V
OUT
SR Slew Rate RL ≥ 2k (Note 7) 2.3 3.4 2.3 3.4 V/µs GBW Gain-Bandwidth Product fO = 100kHz 4.0 5.6 4.0 5.6 MHz I
S
Large-Signal Voltage Gain VO = ±12V, RL = 10k 1200 4800 1000 4500 V/mV
V
= ±10V, RL = 1k 600 4000 500 3000 V/mV
O
Output Voltage Swing RL = 10k ±13.0 ±13.2 ±13.0 ±13.2 V
= 1k ±12.0 ±12.3 ±12.0 ±12.3 V
R
L
Supply Current 4.2 5.20 4.2 5.20 mA
= ±5V 4.2 5.15 4.2 5.15 mA
V
S
Offset Voltage R Adjustment Range
(to VEE) = 10k 10 10 mV
POT
The denotes specifications which apply over the temperature range 0°C TA 70°C. VS = ±15V, V
LT1792C/LT1792I
= 0V,
CM
unless otherwise noted. (Note 9)
LT1792AC LT1792C
SYMBOL PARAMETER CONDITIONS (Note 2) MIN TYP MAX MIN TYP MAX UNITS
V
OS
V
OS
Temp I
OS
I
B
V
CM
CMRR Common Mode Rejection Ratio V PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V 85 99 81 97 dB A
VOL
V
OUT
SR Slew Rate RL ≥ 2k (Note 7) 2.1 3.1 2.1 3.1 V/µs GBW Gain-Bandwidth Product fO = 100kHz 3.2 4.5 3.2 4.5 MHz I
S
Input Offset Voltage 0.4 0.8 0.8 2.7 mV
= ±5V 0.6 1.2 1.2 3.2 mV
V
S
Average Input Offset (Note 6) 410 740 µV/°C Voltage Drift
Input Offset Current 180 500 180 500 pA Input Bias Current 500 1800 500 1800 pA
Input Voltage Range 12.9 13.4 12.9 13.4 V
= –10V to 12.9V 81 104 79 99 dB
CM
Large-Signal Voltage Gain VO = ±12V, RL = 10k 900 3600 800 3400 V/mV
V
= ±10V, RL = 1k 500 2600 400 2400 V/mV
O
Output Voltage Swing RL = 10k ±12.9 ±13.2 ±12.9 ±13.2 V
= 1k ±11.9 ±12.15 ±11.9 ±12.15 V
R
L
Supply Current 4.2 5.30 4.2 5.30 mA
= ±5V 4.2 5.25 4.2 5.25 mA
V
S
–10.0 –10.8 –10.0 –10.8 V
3
LT1792
LECTRICAL C CHARA TERIST
E
–40°C ≤ TA 85°C. V
SYMBOL PARAMETER CONDITIONS (Note 2) MIN TYP MAX MIN TYP MAX UNITS
V
OS
V
OS
Temp I
OS
I
B
V
CM
CMRR Common Mode Rejection Ratio V PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V 83 98 79 96 dB A
VOL
V
OUT
SR Slew Rate RL ≥ 2k 2.0 3.0 2.0 3.0 V/µs GBW Gain-Bandwidth Product fO = 100kHz 2.9 4.3 2.9 4.3 MHz I
S
Input Offset Voltage 0.5 1.0 1.2 3.7 mV
Average Input Offset (Note 6) 410 740 µV/°C Voltage Drift
Input Offset Current 300 800 300 800 pA Input Bias Current 1200 4000 1200 4000 pA
Input Voltage Range 12.6 13.0 12.6 13.0 V
Large-Signal Voltage Gain VO = ±12V, RL = 10k 850 3300 750 3000 V/mV
Output Voltage Swing RL = 10k ±12.8 ±13.1 ±12.8 ±13.1 V
Supply Current 4.2 5.40 4.2 5.40 mA
= ±15V, VCM = 0V, unless otherwise noted. (Notes 8, 9)
S
V
V
R
V
ICS
= ±5V 0.8 1.4 1.5 4.2 mV
S
= –10V to 12.6V 80 103 78 98 dB
CM
= ±10V, RL = 1k 400 2200 300 2000 V/mV
O
= 1k ±11.8 ±12.1 ±11.8 ±12.1 V
L
= ±5V 4.2 5.35 4.2 5.35 mA
S
The denotes specifications which apply over the temperature range
LT1792AC/LT1792AI LT1792C/LT1792I
–10.0 –10.5 –10.0 –10.5 V
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
Note 2: Typical parameters are defined as the 60% yield of parameter distributions of individual amplifiers.
Note 3: Warmed-up I temperature of 32°C from 25°C measurements and 32°C characterization data.
Note 4: Current noise is calculated from the formula:
i
= (2qIB)
n
where q = 1.6 • 10 swamps the contribution of current noise.
Note 5: Input voltage range functionality is assured by testing offset voltage at the input voltage range limits to a maximum of 2.3mV (A grade), to 2.8mV (C grade).
and IOS readings are extrapolated to a chip
B
1/2
–19
coulomb. The noise of source resistors up to 200M
Note 6: This parameter is not 100% tested. Note 7: Slew rate is measured in AV = –1; input signal is ±7.5V, output
measured at ±2.5V. Note 8: The LT1792AC and LT1792C are guaranteed to meet specified
performance from 0°C to 70°C and are designed, characterized and expected to meet these extended temperature limits, but are not tested at –40°C and 85°C. The LT1792I is guaranteed to meet the extended temperature limits. The LT1792AC and LT1792AI grade are 100% temperature tested for the specified temperature range.
Note 9: The LT1792 is measured in an automated tester in less than one second after application of power. Depending on the package used, power dissipation, heat sinking, and air flow conditions, the fully warmed-up chip temperature can be 10°C to 50°C higher than the ambient temperature.
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