Automatic Burst ModeTM Operation at
Light Load (LT1308A)
■
Continuous Switching at Light Loads (LT1308B)
■
Low V
■
Pin-for-Pin Upgrade Compatible with LT1308
■
Lower Quiescent Current in Shutdown: 1μA (Max)
■
Improved Accuracy Low-Battery Detector
Switch: 300mV at 2A
CESAT
Reference: 200mV ± 2%
■
Available in 8-Lead SO and 14-Lead TSSOP Packages
U
APPLICATIOS
■
GSM/CDMA Phones
■
Digital Cameras
■
LCD Bias Supplies
■
Answer-Back Pagers
■
GPS Receivers
■
Battery Backup Supplies
■
Handheld Computers
The LT®1308A/LT1308B are micropower, fixed frequency
step-up DC/DC converters that operate over a 1V to 10V
input voltage range. They are improved versions of the
LT1308 and are recommended for use in new designs. The
LT1308A features automatic shifting to power saving
Burst Mode operation at light loads and consumes just
140μA at no load. The LT1308B features continuous
switching at light loads and operates at a quiescent current
of 2.5mA. Both devices consume less than 1μA in
shutdown.
Low-battery detector accuracy is significantly tighter than
the LT1308. The 200mV reference is specified at ± 2% at
room and ± 3% over temperature. The shutdown pin
enables the device when it is tied to a 1V or higher source
and does not need to be tied to VIN as on the LT1308. An
internal VC clamp results in improved transient response
and the switch voltage rating has been increased to 36V,
enabling higher output voltage applications.
The LT1308A/LT1308B are available in the 8-lead SO and
the 14-lead TSSOP packages.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. Burst
Mode is a registered trademark of Linear Technology Corporation. All other trademarks are
the property of their respective owners.
U
TYPICAL APPLICATIO
L1
4.7μH
V
+
C1
47μF
Li-Ion
CELL
C1: AVX TAJC476M010
C2: AVX TPSD227M006
D1: IR 10BQ015
IN
LBI
LT1308B
SHDNSHUTDOWN
V
C
47k
100pF
L1: MURATA LQH6C4R7
*R1: 887k FOR V
Figure 1. LT1308B Single Li-Ion Cell to 5V/1A DC/DC Converter
SW
LBO
GND
OUT
FB
D1
= 12V
R1*
309k
R2
100k
5V
1A
+
C2
220μF
1308A/B F01a
95
90
85
80
75
70
EFFICIENCY (%)
65
60
55
50
1
Converter Efficiency
VIN = 3.6V
VIN = 1.5V
101001000
LOAD CURRENT (mA)
VIN = 4.2V
VIN = 2.5V
1308A/B F01b
1308abfa
1
LT1308A/LT1308B
A
W
O
LUTEXI TIS
S
A
WUW
U
(Note 1)
ARB
G
VIN, SHDN, LBO Voltage ......................................... 10V
SW Voltage ............................................... –0.4V to 36V
FB Voltage ....................................................... VIN + 1V
VC Voltage ................................................................ 2V
LBI Voltage ................................................. –0.1V to 1V
Current into FB Pin .............................................. ±1mA
UUU
PI CO FIGURATIO
TOP VIEW
LBO
8
LBI
7
V
6
IN
SW
5
SHDN
GND
V
C
FB
T
JMAX
1
2
3
4
S8 PACKAGE
8-LEAD PLASTIC SO
= 125°C, θJA = 190°C/W
Operating Temperature Range
Commercial ............................................ 0°C to 70°C
Extended Commerial (Note 2) ........... – 40°C to 85°C
Industrial ........................................... –40°C to 85°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
TOP VIEW
1
V
C
2
FB
3
SHDN
4
GND
5
GND
6
GND
7
GND
F PACKAGE
14-LEAD PLASTIC TSSOP
= 125°C, θJA = 80°C/W
T
JMAX
(Note 6)
LBO
14
LBI
13
V
12
IN
V
11
IN
SW
10
SW
9
SW
8
NOT RECOMMENDED FOR NEW DESIGNS
Contact Linear Technology for Potential Replacement
UUW
ORDER IFORATIO
LEAD FREE FINISHTAPE AND REELPART MARKINGPACKAGE DESCRIPTIONTEMPERATURE RANGE
LT1308ACS8#PBFLT1308ACS8#TRPBF1308A8-Lead Plastic SO0°C to 70°C
LT1308AIS8#PBFLT1308AIS8#TRPBF1308AI8-Lead Plastic SO–40°C to 85°C
LT1308BCS8#PBFLT1308BCS8#TRPBF1308B8-Lead Plastic SO0°C to 70°C
LT1308BIS8#PBFLT1308BIS8#TRPBF1308BI8-Lead Plastic SO–40°C to 85°C
LT1308ACF#PBFLT1308ACF#TRPBFLT1308ACF14-Lead Plastic TSSOP0°C to 70°C
LT1308BCF#PBFLT1308BCF#TRPBFLT1308BCF14-Lead Plastic TSSOP0°C to 70°C
LEAD BASED FINISHTAPE AND REELPART MARKINGPACKAGE DESCRIPTIONTEMPERATURE RANGE
LT1308ACS8LT1308ACS8#TR1308A8-Lead Plastic SO0°C to 70°C
LT1308AIS8LT1308AIS8#TR1308AI8-Lead Plastic SO–40°C to 85°C
LT1308BCS8LT1308BCS8#TR1308B8-Lead Plastic SO0°C to 70°C
LT1308BIS8LT1308BIS8#TR1308BI8-Lead Plastic SO–40°C to 85°C
LT1308ACFLT1308ACF#TRLT1308ACF14-Lead Plastic TSSOP0°C to 70°C
LT1308BCFLT1308BCF#TRLT1308BCF14-Lead Plastic TSSOP0°C to 70°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
2
1308abfa
LT1308A/LT1308B
ELECTRICAL CHARACTERISTICS
range, otherwise specifications are TA = 25°C. Commercial Grade 0°C to 70°C. VIN = 1.1V, V
The ● denotes specifications which apply over the full operating temperature
= VIN, unless otherwise noted.
SHDN
SYMBOL PARAMETERCONDITIONSMINTYPMAXUNITS
I
Q
Quiescent CurrentNot Switching, LT1308A140240μA
Switching, LT1308B2.54mA
= 0V (LT1308A/LT1308B)0.011μA
V
SHDN
V
FB
I
B
Feedback Voltage●1.201.221.24V
FB Pin Bias Current(Note 3)●2780nA
Reference Line Regulation1.1V ≤ VIN ≤ 2V●0.030.4%/V
2V ≤ V
≤ 10V0.010.2%/V
IN
Minimum Input Voltage0.921V
g
A
f
m
V
OSC
Error Amp TransconductanceΔI = 5μA60μmhos
Error Amp Voltage Gain100V/V
Switching FrequencyVIN = 1.2V●500600700kHz
Maximum Duty Cycle●8290%
Switch Current LimitDuty Cyle = 30% (Note 4)234.5A
Switch V
CESAT
ISW = 2A (25°C, 0°C), VIN = 1.5V290350mV
I
= 2A (70°C), VIN = 1.5V330400mV
SW
Burst Mode Operation Switch Current LimitVIN = 2.5V, Circuit of Figure 1400mA
(LT1308A)
Shutdown Pin CurrentV
= 1.1V●25μA
SHDN
= 6V●2035μA
V
SHDN
= 0V●0.010.1μA
V
SHDN
LBI Threshold Voltage196200204mV
●194200206mV
LBO Output LowI
LBO Leakage CurrentV
LBI Input Bias Current (Note 5)V
= 50μA●0.10.25V
SINK
= 250mV, V
LBI
= 150mV33100nA
LBI
= 5V●0.010.1μA
LBO
Low-Battery Detector Gain3000V/V
Switch Leakage CurrentVSW = 5V●0.0110μA
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C.
Industrial Grade –40°C to 85°C. VIN = 1.2V, V
SYMBOL PARAMETERCONDITIONSMINTYPMAXUNITS
I
Q
V
FB
I
B
g
m
A
V
Quiescent CurrentNot Switching, LT1308A●140240μA
Feedback Voltage●1.191.221.25V
FB Pin Bias Current(Note 3)●2780nA
Reference Line Regulation1.1V ≤ VIN ≤ 2V●0.050.4%/V
Minimum Input Voltage0.921V
Error Amp TransconductanceΔI = 5μA60μmhos
Error Amp Voltage Gain100V/V
= VIN, unless otherwise noted.
SHDN
Switching, LT1308B
V
= 0V (LT1308A/LT1308B)●0.011μA
SHDN
2V ≤ V
≤ 10V●0.010.2%/V
IN
●2.54mA
1308abfa
3
LT1308A/LT1308B
ELECTRICAL CHARACTERISTICS
range, otherwise specifications are TA = 25°C. Industrial Grade –40°C to 85°C. VIN = 1.2V, V
The ● denotes specifications which apply over the full operating temperature
= VIN, unless otherwise noted.
SHDN
SYMBOL PARAMETERCONDITIONSMINTYPMAXUNITS
f
OSC
Switching Frequency●500600750kHz
Maximum Duty Cycle●8290%
Switch Current LimitDuty Cyle = 30% (Note 4)234.5A
Switch V
CESAT
ISW = 2A (25°C, –40°C), VIN = 1.5V290350mV
= 2A (85°C), VIN = 1.5V330400mV
I
SW
Burst Mode Operation Switch Current LimitVIN = 2.5V, Circuit of Figure 1400mA
(LT1308A)
Shutdown Pin CurrentV
= 1.1V●2 5μA
SHDN
= 6V●2035μA
V
SHDN
= 0V0.010.1μA
V
SHDN
LBI Threshold Voltage196200204mV
●193200207mV
LBO Output LowI
LBO Leakage CurrentV
LBI Input Bias Current (Note 5)V
= 50μA●0.10.25V
SINK
= 250mV, V
LBI
= 150mV33100nA
LBI
= 5V●0.010.1μA
LBO
Low-Battery Detector Gain3000V/V
Switch Leakage CurrentVSW = 5V●0.0110μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT1308ACS8, LT1308ACF, LT1308BCS8 and LT1308BCF are
designed, characterized and expected to meet the industrial temperature
limits, but are not tested at – 40°C and 85°C. I grade devices are
guaranteed over the –40°C to 85°C operating temperature range.
Note 4: Switch current limit guaranteed by design and/or correlation to
static tests. Duty cycle affects current limit due to ramp generator (see
Block Diagram).
Note 5: Bias current flows out of LBI pin.
Note 6: Connect the four GND pins (Pins 4–7) together at the device.
Similarly, connect the three SW pins (Pins 8–10) together and the two V
IN
pins (Pins 11, 12) together at the device.
Note 3: Bias current flows into FB pin.
UW
TYPICAL PERFORMANCE CHARACTERISTICS
LT1308B
3.3V Output Efficiency
95
90
85
80
75
70
EFFICIENCY (%)
65
60
55
50
11001000
VIN = 1.8V
10
LOAD CURRENT (mA)
VIN = 2.5V
VIN = 1.2V
1308A/B G01
LT1308A
3.3V Output Efficiency
95
90
85
80
75
70
EFFICIENCY (%)
65
60
55
50
VIN = 1.8V
11001000
10
LOAD CURRENT (mA)
VIN = 2.5V
VIN = 1.2V
1308A/B G02
4
LT1308A
5V Output Efficiency
95
90
VIN = 3.6V
85
80
75
70
EFFICIENCY (%)
65
60
55
50
1
LOAD CURRENT (mA)
VIN = 4.2V
VIN = 1.5V
101001000
VIN = 2.5V
1308A/B G03
1308abfa
UW
TEMPERATURE (°C)
–50–25
V
REF
(mV)
05025
75
100
1308 • G09
203
202
201
200
199
198
197
196
195
TYPICAL PERFORMANCE CHARACTERISTICS
LT1308A/LT1308B
LT1308B
12V Output Efficiency
90
85
80
75
70
65
EFFICIENCY (%)
60
55
50
11001000
VIN = 5V
VIN = 3.3V
10
LOAD CURRENT (mA)
SHDN Pin Bias Current vs Voltage
50
40
30
20
SHDN PIN CURRENT (μA)
10
0
2
0
SHDN PIN VOLTAGE (V)
6
4
8
1308A/B G04
–40°C
25°C
85°C
1308 G07
Switch Current Limit vs
Duty Cycle
4.0
3.5
3.0
CURRENT LIMIT (A)
2.5
2.0
20
0
DUTY CYCLE (%)
60
80
40
100
1308 • G05
FB, LBI Bias Current vs
Temperature
80
70
60
50
40
30
BIAS CURRENT (nA)
20
10
0
10
–50–25
LBI
05025
TEMPERATURE (°C)
FB
75
100
1308 • G08
Switch Saturation Voltage
vs Current
500
400
(mV)
300
CESAT
200
SWITCH V
100
0
0
0.5
SWITCH CURRENT (A)
25°C
1.0
Low Battery Detector Reference
vs Temperature
1.5
85°C
–40°C
2.0
1308 G06
Oscillator Frequency vs
Temperature
800
750
700
650
600
550
FREQUENCY (kHz)
500
450
400
–50–2.5
05025
TEMPERATURE (°C)
75
1308 • G10
100
LT1308A Quiescent Current vs
Temperature
180
170
160
150
140
130
120
QUIESCENT CURRENT (μA)
110
100
–50–25
05025
TEMPERATURE (°C)
75
1308 • G11
100
Feedback Pin Voltage vs
Temperature
1.25
1.24
1.23
1.22
(V)
FB
V
1.21
1.20
1.19
1.18
–50–25
05025
TEMPERATURE (°C)
75
1308 • G12
1308abfa
100
5
LT1308A/LT1308B
UUU
PIN FUNCTIONS
(SO/TSSOP)
VC (Pin 1/Pin 1): Compensation Pin for Error Amplifier.
Connect a series RC from this pin to ground. Typical
values are 47kΩ and 100pF. Minimize trace area at V
FB (Pin 2/Pin 2): Feedback Pin. Reference voltage is
1.22V. Connect resistive divider tap here. Minimize trace
area at FB. Set V
V
= 1.22V(1 + R1/R2).
OUT
SHDN (Pin 3/Pin 3): Shutdown. Ground this pin to turn
off switcher. To enable, tie to 1V or more. SHDN does not
need to be at VIN to enable the device.
GND (Pin 4/Pins 4, 5, 6, 7): Ground. Connect directly to
local ground plane. Ground plane should enclose all
components associated with the LT1308. PCB copper
connected to these pins also functions as a heat sink. For
the TSSOP package, connect all pins to ground copper to
get the best heat transfer. This keeps chip heating to a
minimum.
according to:
OUT
.
C
SW (Pin 5/Pins 8, 9, 10): Switch Pins. Connect inductor/
diode here. Minimize trace area at these pins to keep EMI
down. For the TSSOP package, connect all SW pins
together at the package.
(Pin 6/Pins 11, 12): Supply Pins. Must have local
V
IN
bypass capacitor right at the pins, connected directly to
ground. For the TSSOP package, connect both V
together at the package.
LBI (Pin 7/Pin 13): Low-Battery Detector Input. 200mV
reference. Voltage on LBI must stay between –100mV
and 1V. Low-battery detector does not function with
SHDN pin grounded. Float LBI pin if not used.
LBO (Pin 8/Pin 14): Low-Battery Detector Output. Open
collector, can sink 50μA. A 220kΩ pull-up is recom-
mended. LBO is high impedance when SHDN is grounded.
The LT1308A combines a current mode, fixed frequency
PWM architecture with Burst Mode micropower operation
to maintain high efficiency at light loads. Operation can be
best understood by referring to the block diagram in Figure
2. Q1 and Q2 form a bandgap reference core whose loop
is closed around the output of the converter. When VIN is
1V, the feedback voltage of 1.22V, along with an 80mV
drop across R5 and R6, forward biases Q1 and Q2’s base
collector junctions to 300mV. Because this is not enough
to saturate either transistor, FB can be at a higher voltage
than V
1.22V, causing V
decrease. When VC reaches the bias voltage on hysteretic
comparator A1, A1’s output goes low, turning off all
circuitry except the input stage, error amplifier and lowbattery detector. Total current consumption in this state is
140μA. As output loading causes the FB voltage to
decrease, A1’s output goes high, enabling the rest of the
IC. Switch current is limited to approximately 400mA
initially after A1’s output goes high. If the load is light, the
output voltage (and FB voltage) will increase until A1’s
output goes low, turning off the rest of the LT1308A. Low
frequency ripple voltage appears at the output. The ripple
frequency is dependent on load current and output capacitance. This Burst Mode operation keeps the output regulated and reduces average current into the IC, resulting in
high efficiency even at load currents of 1mA or less.
If the output load increases sufficiently, A1’s output
remains high, resulting in continuous operation. When the
LT1308A is running continuously, peak switch current is
controlled by VC to regulate the output voltage. The switch
is turned on at the beginning of each switch cycle. When
the summation of a signal representing switch current and
a ramp generator (introduced to avoid subharmonic oscillations at duty factors greater than 50%) exceeds the V
signal, comparator A2 changes state, resetting the flip-flop
and turning off the switch. Output voltage increases as
switch current is increased. The output, attenuated by a
resistor divider, appears at the FB pin, closing the overall
loop. Frequency compensation is provided by an external
series RC network connected between the VC pin and
ground.
. When there is no load, FB rises slightly above
IN
(the error amplifier’s output) to
C
C
Low-battery detector A4’s open-collector output (LBO)
pulls low when the LBI pin voltage drops below 200mV.
There is no hysteresis in A4, allowing it to be used as an
amplifier in some applications. The entire device is disabled when the SHDN pin is brought low. To enable the
converter, SHDN must be at 1V or greater. It need not be
tied to VIN as on the LT1308.
The LT1308B differs from the LT1308A in that there is no
hysteresis in comparator A1. Also, the bias point on A1 is
set lower than on the LT1308B so that switching can occur
at inductor current less than 100mA. Because A1 has no
hysteresis, there is no Burst Mode operation at light loads
and the device continues switching at constant frequency.
This results in the absence of low frequency output voltage
ripple at the expense of efficiency.
The difference between the two devices is clearly illustrated in Figure 3. The top two traces in Figure 3 shows an
LT1308A/LT1308B circuit, using the components indicated in Figure 1, set to a 5V output. Input voltage is 3V.
Load current is stepped from 50mA to 800mA for both
circuits. Low frequency Burst Mode operation voltage
ripple is observed on Trace A, while none is observed on
Trace B.
At light loads, the LT1308B will begin to skip alternate
cycles. The load point at which this occurs can be decreased by increasing the inductor value. However, output
ripple will continue to be significantly less than the LT1308A
output ripple. Further, the LT1308B can be forced into
micropower mode, where I
falls from 3mA to 200μA by
Q
sinking 40μA or more out of the VC pin. This stops
switching by causing A1’s output to go low.
TRACE A: LT1308A
, 100mV/DIV
V
OUT
AC COUPLED
TRACE B: LT1308B
V
, 100mV/DIV
OUT
AC COUPLED
800mA
I
LOAD
50mA
V
= 3V200μs/DIV1308 F03
IN
(CIRCUIT OF FIGURE 1)
Figure 3. LT1308A Exhibits Burst Mode Operation Output
Voltage Ripple at 50mA Load, LT1308B Does Not
8
1308abfa
LT1308A/LT1308B
U
WUU
APPLICATIONS INFORMATION
Waveforms for a LT1308B 5V to 12V boost converter
using a 10μF ceramic output capacitor are pictured in
Figures 4 and 5. In Figure 4, the converter is operating in
continuous mode, delivering a load current of approximately 500mA. The top trace is the output. The voltage
increases as inductor current is dumped into the output
capacitor during the switch off time, and the voltage
decreases when the switch is on. Ripple voltage is in this
case due to capacitance, as the ceramic capacitor has little
ESR. The middle trace is the switch voltage. This voltage
alternates between a V
The lower trace is the switch current. At the beginning of
the switch cycle, the current is 1.2A. At the end of the
switch on time, the current has increased to 2A, at which
point the switch turns off and the inductor current flows
into the output capacitor through the diode. Figure 5
depicts converter waveforms at a light load. Here the
converter operates in discontinuous mode. The inductor
current reaches zero during the switch off time, resulting
in some ringing at the switch node. The ring frequency is
set by switch capacitance, diode capacitance and inductance. This ringing has little energy, and its sinusoidal
shape suggests it is free from harmonics. Minimizing the
copper area at the switch node will prevent this from
causing interference problems.
V
OUT
100mV/DIV
V
SW
10V/DIV
I
SW
1A/DIV
Figure 4. 5V to 12V Boost Converter Waveforms in
Continuous Mode. 10μF Ceramic Capacitor Used at Output
V
OUT
20mV/DIV
V
SW
10V/DIV
CESAT
and V
500ns/DIV
plus the diode drop.
OUT
LAYOUT HINTS
The LT1308A/LT1308B switch current at high speed,
mandating careful attention to layout for proper performance.
careless layout
You will not get advertised performance with
. Figure 6 shows recommended component
placement for an SO-8 package boost (step-up) converter.
Follow this closely in your PC layout. Note the direct path
of the switching loops. Input capacitor C1
must
be placed
close (< 5mm) to the IC package. As little as 10mm of wire
or PC trace from CIN to VIN will cause problems such as
inability to regulate or oscillation.
The negative terminal of output capacitor C2 should tie
close to the ground pin(s) of the LT1308A/LT1308B. Doing
this reduces dI/dt in the ground copper which keeps high
frequency spikes to a minimum. The DC/DC converter
ground should tie to the PC board ground plane at one
place only, to avoid introducing dI/dt in the ground plane.
LBI
GROUND PLANE
R1
SHUTDOWN
MULTIPLE
VIAs
R2
GND
1
2
LT1308A
LT1308B
3
4
C2
Figure 6. Recommended Component Placement for SO-8
Package Boost Converter. Note Direct High Current Paths
Using Wide PC Traces. Minimize Trace Area at Pin 1 (VC) and
Pin 2 (FB). Use Multiple Vias to Tie Pin 4 Copper to Ground
Plane. Use Vias at One Location Only to Avoid Introducing
Switching Currents into the Ground Plane
LBO
C1
+
8
7
6
5
V
IN
L1
+
D1
V
OUT
1308 F04
I
SW
500mA/DIV
500ns/DIV
Figure 5. Converter Waveforms in Discontinuous Mode
Figure 7 shows recommended component placement for
a boost converter using the TSSOP package. Placement is
similar to the SO-8 package layout.
1308abfa
9
LT1308A/LT1308B
U
WUU
APPLICATIONS INFORMATION
LBI
GROUND PLANE
R1
SHUTDOWN
MULTIPLE
VIAs
R2
GND
1
2
3
4
5
6
7
LT1308A
LT1308B
C2
Figure 7. Recommended Component
Placement for TSSOP Boost Converter.
Placement is Similar to Figure 4.
LBO
C1
+
14
13
12
11
10
9
8
+
V
OUT
V
IN
L1
D1
1308 F07
A SEPIC (Single-Ended Primary Inductance Converter)
schematic is shown in Figure 8. This converter topology
produces a regulated output over an input voltage range
that spans (i.e., can be higher or lower than) the output.
Recommended component placement for an SO-8 package SEPIC is shown in Figure 9.
Figure 8. SEPIC (Single-Ended Primary
Inductance Converter) Converts 3V to 10V
Input to a 5V/500mA Regulated Output
L1A
GROUND PLANE
R1
R2
SHUTDOWN
MULTIPLE
VIAs
Figure 9. Recommended Component Placement for SEPIC
GND
1
2
3
4
C1
LT1308A
LT1308B
C3
+
LBI
LBO
+
8
7
6
5
V
OUT
V
IN
L1AL1B
C2
D1
1308 F09
1308abfa
10
LT1308A/LT1308B
U
WUU
APPLICATIONS INFORMATION
SHDN PIN
The LT1308A/LT1308B SHDN pin is improved over the
LT1308. The pin does not require tying to V
device, but needs only a logic level signal. The voltage on
the SHDN pin can vary from 1V to 10V independent of V
Further, floating this pin has the same effect as grounding,
which is to shut the device down, reducing current drain
to 1μA or less.
LOW-BATTERY DETECTOR
The low-battery detector on the LT1308A/LT1308B features improved accuracy and drive capability compared to
the LT1308. The 200mV reference has an accuracy of ±2%
and the open-collector output can sink 50μA. The LT1308A/
LT1308B low-battery detector is a simple PNP input gain
stage with an open-collector NPN output. The negative
input of the gain stage is tied internally to a 200mV
reference. The positive input is the LBI pin. Arrangement
as a low-battery detector is straightforward. Figure 10
details hookup. R1 and R2 need only be low enough in
value so that the bias current of the LBI pin doesn’t cause
large errors. For R2, 100k is adequate. The 200mV reference can also be accessed as shown in Figure 11.
R1
LBI
R2
100k
V
LT1308A
IN
+
LT1308B
LBO
–
to enable the
IN
5V
100k
TO PROCESSOR
IN
.
A cross plot of the low-battery detector is shown in
Figure 12. The LBI pin is swept with an input which varies
from 195mV to 205mV, and LBO (with a 100k pull-up
resistor) is displayed.
The LT1308A/LT1308B can start up into heavy loads,
unlike many CMOS DC/DC converters that derive operating voltage from the output (a technique known as
“bootstrapping”). Figure 13 details start-up waveforms of
Figure 1’s circuit with a 20Ω load and VIN of 1.5V. Inductor
current rises to 3.5A as the output capacitor is charged.
After the output reaches 5V, inductor current is about 1A.
In Figure 14, the load is 5Ω and input voltage is 3V. Output
voltage reaches 5V in 500μs after the device is enabled.
Figure 15 shows start-up behavior of Figure 5’s SEPIC
circuit, driven from a 9V input with a 10Ω load. The output
reaches 5V in about 1ms after the device is enabled.
200mV
V
BAT
INTERNAL
REFERENCE
GND
1308 F10
Figure 10. Setting Low-Battery Detector Trip Point
200k
V
BAT
2N3906
V
REF
200mV
+
10k
LBO
LBI
10μF
Figure 11. Accessing 200mV Reference
R1 =
V
IN
LT1308A
LT1308B
GND
1308 F11
V
LB
– 200mV
2μA
V
OUT
2V/DIV
I
L1
1A/DIV
V
SHDN
5V/DIV
1ms/DIV
Figure 13. 5V Boost Converter of Figure 1.
Start-Up from 1.5V Input into 20Ω Load
1308 F13
1308abfa
11
LT1308A/LT1308B
U
WUU
APPLICATIONS INFORMATION
V
OUT
1V/DIV
I
L1
2A/DIV
V
SHDN
5V/DIV
Figure 14. 5V Boost Converter of Figure 1.
Start-Up from 3V Input into 5Ω Load
V
OUT
2V/DIV
I
SW
2A/DIV
V
SHDN
5V/DIV
Figure 15. 5V SEPIC Start-Up from 9V Input into 10Ω Load
Soft-Start
In some cases it may be undesirable for the LT1308A/
LT1308B to operate at current limit during start-up, e.g.,
500μs/DIV
1308 F14
500μs/DIV
1308 F15
when operating from a battery composed of alkaline
cells. The inrush current may cause sufficiency internal
voltage drop to trigger a low-battery indicator. A programmable soft-start can be implemented with 4 discrete
components. A 5V to 12V boost converter using the
LT1308B is detailed in Figure 16. C4 differentiates V
causing a current to flow into R3 as V
increases.
OUT
OUT
,
When this current exceeds 0.7V/33k, or 21μA, current
flows into the base of Q1. Q1’s collector then pulls
current out the VC pin, creating a feedback loop where the
slope of V
ΔΔV
OUT
With C4 = 33nF, V
is limited as follows:
OUT
V
07
=
t
kC
334.•
OUT
/t is limited to 640mV/ms. Start-up
waveforms for Figure 16’s circuit are pictured in Figure
17. Without the soft-start circuit implemented, the inrush
current reaches 3A. The circuit reaches final output
voltage in approximately 250μs. Adding the soft-start
components reduces inductor current to less than 1A, as
detailed in Figure 18, while the time required to reach final
output voltage increases to about 15ms. C4 can be
adjusted to achieve any output slew rate desired.
Figure 16. 5V to 12V Boost Converter with Soft-Start Components Q1, C4, R3 and R4.
1308abfa
LT1308A/LT1308B
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APPLICATIONS INFORMATION
12V
V
OUT
5V/DIV
5V
I
L1
1A/DIV
V
SHDN
10V/DIV
50μs/DIV
Figure 17. Start-Up Waveforms of Figure 16’s Circuit
without Soft-Start Components
12V
V
OUT
5V
I
L1
1A/DIV
V
SHDN
10V/DIV
5ms/DIV
Figure 18. Start-Up Waveforms of Figure 16’s Circuit
with Soft-Start Components Added
COMPONENT SELECTION
Diodes
We have found ON Semiconductor MBRS130 and International Rectifier 10BQ015 to perform well. For applications
where V
exceeds 30V, use 40V diodes such as
OUT
MBRS140 or 10BQ040.
Height limited applications may benefit from the use of the
MBRM120. This component is only 1mm tall and offers
performance similar to the MBRS130.
Inductors
Suitable inductors for use with the LT1308A/LT1308B
must fulfill two requirements. First, the inductor must be
able to handle current of 2A steady-state, as well as
support transient and start-up current over 3A without
inductance decreasing by more than 50% to 60%. Second,
the DCR of the inductor should have low DCR, under 0.05Ω
1308 F17
1308 F18
so that copper loss is minimized. Acceptable inductance
values range between 2μH and 20μH, with 4.7μH best for
most applications. Lower value inductors are physically
smaller than higher value inductors for the same current
capability.
Table 1 lists some inductors we have found to perform well
in LT1308A/LT1308B application circuits. This is not an
exclusive list.
Table 1
VENDORPART NO.VALUEPHONE NO.
MurataLQH6C4R74.7μH770-436-1300
SumidaCDRH734R74.7μH847-956-0666
CoiltronicsCTX5-15μH561-241-7876
CoilcraftLPO2506IB-4724.7μH847-639-6400
Capacitors
Equivalent Series Resistance (ESR) is the main issue
regarding selection of capacitors, especially the output
capacitors.
The output capacitors specified for use with the LT1308A/
LT1308B circuits have low ESR and are specifically
designed for power supply applications. Output voltage
ripple of a boost converter is equal to ESR multiplied by
switch current. The performance of the AVX TPSD227M006
220μF tantalum can be evaluated by referring to Figure 3.
When the load is 800mA, the peak switch current is
approximately 2A. Output voltage ripple is about 60mV
, so the ESR of the output capacitor is 60mV/2A or 0.03Ω.
P
P-
Ripple can be further reduced by paralleling ceramic units.
Table 2 lists some capacitors we have found to perform
well in the LT1308A/LT1308B application circuits. This is
not an exclusive list.
Table 2
VENDORSERIESPART NO.VALUEPHONE NO.
AVXTPSTPSD227M006220μF, 6V803-448-9411
AVXTPSTPSD107M010 100μF, 10V 803-448-9411
Taiyo YudenX5RLMK432BJ22622μF, 10V408-573-4150
Taiyo YudenX5RTMK432BJ10610μF, 25V408-573-4150
1308abfa
13
LT1308A/LT1308B
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APPLICATIONS INFORMATION
Ceramic Capacitors
Multilayer ceramic capacitors have become popular, due
to their small size, low cost, and near-zero ESR. Ceramic
capacitors can be used successfully in LT1308A/LT1308B
designs provided loop stability is considered. A tantalum
capacitor has some ESR and this causes an "ESR zero" in
the regulator loop. This zero is beneficial to loop stability.
Ceramics do not have appreciable ESR, so the zero is lost
when they are used. However, the LT1308A/LT1308B
have external compensation pin (VC) so component values can be adjusted to achieve stability. A phase lead
capacitor can also be used to tune up load step response
to optimum levels, as detailed in the following paragraphs.
Figure 19 details a 5V to 12V boost converter using either
a tantalum or ceramic capacitor for C2. The input capacitor has little effect on loop stability, as long as minimum
capacitance requirements are met. The phase lead capacitor CPL parallels feedback resistor R1. Figure 20 shows
load step response of a 50mA to 500mA load step using a
47μF tantalum capacitor at the output. Without the phase
lead capacitor, there is some ringing, suggesting the
phase margin is low. CPL is then added, and response to
the same load step is pictured in Figure 21. Some phase
margin is restored, improving the response. Next, C2 is
replaced by a 10μF, X5R dielectric, ceramic capacitor.
Without CPL, load step response is pictured in Figure 22.
Although the output settles faster than the tantalum case,
there is appreciable ringing, again suggesting phase margin is low. Figure 23 depicts load step response using the
10μF ceramic output capacitor and CPL. Response is clean
and no ringing is evident. Ceramic capacitors have the
added benefit of lowering ripple at the switching frequency
due to their very low ESR. By applying CPL in tandem with
the series RC at the V
pin, loop response can be tailored
C
to optimize response using ceramic output capacitors.
V
OUT
500mV/DIV
I
L1
1A/DIV
500mA
LOAD
CURRENT
50mA
Figure 20. Load Step Response of LT1308B 5V to 12V
Boost Converter with 47μF Tantalum Output Capacitor
V
OUT
500mV/DIV
200μs/DIV
1308 F20
V
IN
5V
V
IN
SHDN
V
C
+
C1
47μF
C1: AVX TAJC476M010
C2: AVX TPSD476M016 (47μF) OR
TAIYO YUDEN TMK432BJ106MM (10μF)
D1: IR 10BQ015
L1: MURATA LQH6C4R7
Figure 19. 5V to 12V Boost Converter
L1
4.7μH
LT1308B
47k
100pF
SW
GND
I
D1
R1
R3
100k
10k
FB
R2
11.3k
C
PL
330pF
1308 F19
C2
V
OUT
12V
500mA
CURRENT
CURRENT
L1
1A/DIV
500mA
LOAD
50mA
200μs/DIV
1308 F21
Figure 21. Load Step Response with 47μF Tantalum
Output Capacitor and Phase Lead Capacitor C
Figure 23. Load Step Response with 10μF X5R
Ceramic Output Capacitor and C
GSM AND CDMA PHONES
The LT1308A/LT1308B are suitable for converting a single
Li-Ion cell to 5V for powering RF power stages in GSM or
CDMA phones. Improvements in the LT1308A/LT1308B
error amplifiers allow external compensation values to be
reduced, resulting in faster transient response compared
to the LT1308. The circuit of Figure 24 (same as Figure 1,
printed again for convenience) provides a 5V, 1A output
from a Li-Ion cell. Figure 25 details transient response at
the LT1308A operating at a VIN of 4.2V, 3.6V and 3V.
Ripple voltage in Burst Mode operation can be seen at
10mA load. Figure 26 shows transient response of the
LT1308B under the same conditions. Note the lack of
Burst Mode ripple at 10mA load.
+
C1
47μF
Li-Ion
CELL
200μs/DIV
V
IN
SHDNSHUTDOWN
V
C
L1
4.7μH
LT1308B
47k
100pF
SW
GND
1308 F23
PL
D1
R1
309k
FB
R2
100k
5V
1A
+
C2
220μF
V
OUT
VIN = 4.2V
V
OUT
VIN = 3.6V
V
OUT
VIN = 3V
I
LOAD
1A
10mA
V
TRACES =200μs/DIV
OUT
200mV/DIV
1308 F25
Figure 25. LT1308A Li-Ion to 5V Boost Converter
Transient Response to 1A Load Step
V
OUT
VIN = 4.2V
V
OUT
VIN = 3.6V
V
OUT
VIN = 3V
I
LOAD
1A
10mA
V
TRACES =100μs/DIV
OUT
200mV/DIV
1308 F26
Figure 26. LT1308B Li-Ion to 5V Boost
Converter Transient Response to 1A Load Step
C1: AVX TAJC476M010
C2: AVX TPSD227M006
D1: IR 10BQ015
L1: MURATA LQH6N4R7
Figure 24. Li-Ion to 5V Boost Converter Delivers 1A
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
× 45°
.016 – .050
(0.406 – 1.270)
INCHES
(MILLIMETERS)
.160 ±.005
.228 – .244
(5.791 – 6.197)
0°– 8° TYP
.053 – .069
(1.346 – 1.752)
.014 – .019
(0.355 – 0.483)
TYP
.150 – .157
(3.810 – 3.988)
NOTE 3
1
3
2
4
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
SO8 0303
18
1308abfa
PACKAGE DESCRIPTION
U
F Package
14-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1650)
1.05 ±0.10
4.90 – 5.10*
(.193 – .201)
14 13 12 11 10 9
LT1308A/LT1308B
8
6.60 ±0.10
0.45 ± 0.05
RECOMMENDED SOLDER PAD LAYOUT
4.30 – 4.50**
(.169 – .177)
0.09 – 0.20
(.0035 – .0079)
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE
*
DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED .152mm (.006") PER SIDE
**
DIMENSIONS DO NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED .254mm (.010") PER SIDE
0.50 – 0.75
(.020 – .030)
4.50 ±0.10
MILLIMETERS
(INCHES)
0.65 BSC
0.25
REF
0° – 8°
0.65
(.0256)
BSC
0.19 – 0.30
(.0075 – .0118)
13456
2
TYP
6.40
(.252)
BSC
7
1.10
(.0433)
MAX
0.05 – 0.15
(.002 – .006)
F14 TSSOP 0204
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
1308abfa
19
LT1308A/LT1308B
TYPICAL APPLICATIO
U
Li-Ion to 12V/300mA Step-Up DC/DC Converter
2.7V TO 4.2V
+
C1
47μF
Li-Ion
CELL
C1: AVX TAJC476M010
C2: AVX TPSD107M016
D1: IR 10BQ015
L1
4.7μH
V
IN
LT1308B
SHDNSHUTDOWN
V
C
47k
330pF
L1: MURATA LQH6C4R7
SW
GND
D1
R1
887k
FB
R2
100k
+
12V
300mA
C2
100μF
1308A/B TA01
RELATED PARTS
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