Page 1
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1 7
35
BOTTOM VIEW
2 6
31 X 32 MILS
D1
G1
S2
S1
G2
D2
FEATURES
LOW NOISE e
n
= 8nV/√Hz TYP.
LOW LEAKAGE I
G
= 10pA TYP.
LOW DRIFT |∆V
GS1-2
/∆T|= 5µV/°C max.
LOW OFFSET VOLTAGE IV
GS1-2
I= 2mV TYP.
ABSOLUTE MAXIMUM RATINGS
NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature -65° to +150°C
Operating Junction Temperature +150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
Gate Voltage to Drain or Source 60V
-V
DSO
Drain to Source Voltage 60V
-I
G(f)
Gate Forward Current 50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total 400mW @ +125°C
G1 S2
S1 G2
D1 D2
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS840 LS841 LS842 UNITS CONDITIONS
|∆V
GS1-2
/∆T| max. Drift vs. Temperature 5 10 40 µV/°C VDG= 20V ID= 200µA
TA= -55°C to +125°C
|V
GS1-2
| max. Offset Voltage 5 10 25 mV VDG= 20V ID= 200µA
LS840 LS841 LS842
LOW NOISE LOW DRIFT
LOW CAPACITANCE
MONOLITHIC DUAL
N-CHANNEL JFET
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
BV
GSS
Breakdown Voltage 60 -- -- V VDS= 0 ID= 1nA
BV
GGO
Gate-to-Gate Breakdown 60 -- -- V IG= 1nA ID= 0 IS= 0
TRANSCONDUCTANCE
Y
fss
Full Conduction 1000 4000 µmho VDG= 20V VGS= 0 f= 1kHz
Y
fs
Typical Conduction 500 1000 µmho VDG= 20V ID= 200µA
|Y
fs1-2/Yfs
| Mismatch -- 0.6 3 %
DRAIN CURRENT
I
DSS
Full Conduction 0.5 2 5 mA VDG= 20V VGS= 0
|I
DSS1-2/IDSS
| Mismatch at Full Conduction -- 1 5 %
GATE VOLTAGE
V
GS
(off) or V
P
Pinchoff Voltage 1 2 4.5 V VDS= 20V ID= 1nA
V
GS
Operating Range 0.5 -- 4 V VDS= 20V ID= 200µA
GATE CURRENT
-I
G
Operating -- 10 50 pA VDG= 20V ID= 200µA
-I
G
High Temperature -- -- 50 nA VDG= 20V ID= 200µATA= +125°C
-I
G
Reduced VDG -- 5 -- pA VDG= 10V ID= 200µA
-I
GSS
At Full Conduction -- -- 100 pA VDG= 20V VDS= 0
Page 2
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45°
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45°
1
2
3
4
5
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
2
3
45
6
7
8
D1
SS
G1 S2
G2
SS
D2
P-DIP
S1 1
2
3
45
6
7
8
D1
SS
G1
S2
G2
SS
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
MAX.
(10.29)
(4.78)
(5.00)
SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
Y
OSS
Full Conduction -- -- 10 µmho VDG= 20V VGS= 0
Y
OS
Operating -- 0.1 1 µmho VDG= 20V ID= 200µA
|Y
OS1-2
| Differential -- 0.01 0.1 µmho
COMMON MODE REJECTION
CMR -20 log |∆V
GS1-2
/∆VDS| -- 100 -- dB ∆VDS= 10 to 20V ID= 200µA
CMR -- 75 -- dB ∆V
DS
= 5 to 10V ID= 200µA
NOISE
NF Figure -- -- 0.5 dB V
DS
= 20V VGS= 0 RG= 10MΩ
f= 100Hz NBW= 6Hz
e
n
Voltage -- -- 10 nV/√Hz VDS= 20V ID= 200µA f= 1KHz
NBW= 1Hz
e
n
Voltage -- -- 15 nV/√Hz VDS= 20V ID= 200µA f= 10Hz
NBW= 1Hz
CAPACITANCE
C
ISS
Input -- 4 10 pF VDS= 20V ID= 200µA
C
RSS
Reverse Transfer -- 1.2 5 pF
C
DD
Drain-to-Drain -- 0.1 -- pF VDG= 20V ID= 200µA
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