The LT®1028(gain of –1 stable)/LT1128(gain of +1 stable)
achieve a new standard of excellence in noise performance
with 0.85nV/√Hz 1kHz noise, 1.0nV/√Hz 10Hz noise. This
ultralow noise is combined with excellent high speed
specifications (gain-bandwidth product is 75MHz for
LT1028, 20MHz for LT1128), distortion-free output, and
true precision parameters (0.1µV/°C drift, 10µV offset
voltage, 30 million voltage gain). Although the LT1028/
LT1128 input stage operates at nearly 1mA of collector
current to achieve low voltage noise, input bias current is
only 25nA.
The LT1028/LT1128’s voltage noise is less than the noise
of a 50Ω resistor. Therefore, even in very low source
impedance transducer or audio amplifier applications, the
LT1028/LT1128’s contribution to total system noise will
be negligible.
, LTC and LT are registered trademarks of Linear Technology Corporation
■
Low Noise Frequency Synthesizers
■
High Quality Audio
■
Infrared Detectors
■
Accelerometer and Gyro Amplifiers
■
350Ω Bridge Signal Conditioning
■
Magnetic Search Coil Amplifiers
■
Hydrophone Amplfiers
TYPICAL APPLICATIO
Flux Gate Amplifier
SQUARE
WAVE
DRIVE
1kHz
FLUX GATE
TYPICAL
SCHONSTEDT
#203132
U
+
LT1028
–
DEMODULATOR
SYNC
OUTPUT TO
DEMODULATOR
1k
50Ω
1028/1128 TA01
VOLTAGE NOISE DENSITY (nV/√Hz)
Voltage Noise vs Frequency
10
MAXIMUM
1/f CORNER = 14Hz
TYPICAL
1
1/f CORNER = 3.5Hz
0.1
0.1
1
FREQUENCY (Hz)
10
VS = ±15V
= 25°C
T
A
100
1028/1128 TA02
1k
1
LT1028/LT1128
TOP VIEW
SW PACKAGE
16-LEAD PLASTIC SOL
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
NC
TRIM
–IN
+IN
V
–
NC
NC
NC
NC
TRIM
V
+
OUT
NC
NC
NOTE: THIS DEVICE IS NOT RECOMMENDED FOR NEW DESIGNS
OVERCOMP
+
–
A
W
O
LUTEXI TIS
S
A
WUW
U
(Note 1)
ARB
G
Supply Voltage
–55°C to 105°C ................................................ ±22V
105°C to 125°C ................................................ ±16V
Differential Input Current (Note 9) ......................±25mA
Input Voltage ............................ Equal to Supply Voltage
Output Short Circuit Duration .......................... Indefinite
PACKAGE
1
TRIM
V
OS
2
–IN
3
+IN
H PACKAGE
8-LEAD TO-5 METAL CAN
T
= 175°C, θJA = 140°C/W, θJC = 40°C/W
JMAX
/
O
RDER IFORATIO
TOP VIEW
VOS TRIM
8
–
+
4
–
V
(CASE)
7
5
+
V
6
OUT
OVERCOMP
ORDER PART
LT1028AMH
LT1028MH
LT1028ACH
LT1028CH
WU
NUMBER
U
OBSOLETE PACKAGE
Consider S8 or N8 Packages for Alternate Source
Operating Temperature Range
LT1028/LT1128AM, M (OBSOLETE). –55°C to 125°C
LT1028/LT1128AC, C (Note 11) ......... – 40°C to 85°C
Storage Temperature Range
All Devices........................................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
ORDER PART
NUMBER
TOP VIEW
V
OS
1
TRIM
–IN
+IN
–
V
T
–
2
+
3
45
S8 PACKAGE
8-LEAD PLASTIC SOIC
= 135°C, θJA = 140°C/W
JMAX
8
7
6
V
OS
TRIM
V+
OUT
OVER-
COMP
LT1028CS8
LT1128CS8
S8 PART MARKING
1028
1128
V
OS
TRIM
–IN
+IN
–
V
T
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Large-Signal Voltage GainRL ≥ 2k, VO = ±10V●3.014.02.014.0V/µV
RL ≥ 1k, VO = ±10V2.010.01.510.0V/µV
Maximum Output Voltage SwingRL ≥ 2k●±10.3 ±11.6±10.3±11.6V
Supply Current●8.711.59.013.0mA
LT1028M
LT1128M
3
LT1028/LT1128
LECTRICAL CCHARA TERIST
E
0°C ≤ TA ≤ 70°C. VS = ±15V, unless otherwise noted.
SYMBOL PARAMETERCONDITIONSMINTYPMAXMINTYPMAXUNITS
V
OS
∆V
∆Temp
I
OS
I
B
CMRRCommon Mode Rejection RatioVCM = ±10.5V●110124106124dB
PSRRPower Supply Rejection RatioVS = ±4.5V to ±18V●114132107132dB
A
VOL
V
OUT
I
S
E
–40°C ≤ TA ≤ 85°C. VS = ±15V, unless otherwise noted. (Note 11)
SYMBOL PARAMETERCONDITIONSMINTYPMAXMINTYPMAXUNITS
V
OS
∆V
∆Temp
I
OS
I
B
CMRRCommon Mode Rejection RatioVCM = ±10.5V●108123102123dB
PSRRPower Supply Rejection RatioVS = ±4.5V to ±18V●112131106131dB
A
VOL
V
OUT
I
S
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Input Offset Voltage measurements are performed by automatic
test equipment approximately 0.5 sec. after application of power. In
addition, at T
approximately 55°C to account for the chip temperature rise when the
device is fully warmed up.
Note 3: Long Term Input Offset Voltage Stability refers to the average
trend line of Offset Voltage vs. Time over extended periods after the first
30 days of operation. Excluding the initial hour of operation, changes in
V
OS
Note 4: This parameter is tested on a sample basis only.
Note 5: 10Hz noise voltage density is sample tested on every lot with the
exception of the S8 and S16 packages. Devices 100% tested at 10Hz are
available on request.
Note 6: Current noise is defined and measured with balanced source
resistors. The resultant voltage noise (after subtracting the resistor noise
Input Offset Voltage(Note 2)●158030125µV
Average Input Offset Drift(Note 8)●0.10.80.21.0µV/°C
Large-Signal Voltage GainRL ≥ 2k, VO = ±10V●4.020.02.520.0V/µV
Maximum Output Voltage SwingRL ≥ 2k●±11.0 ±12.5±11.0±12.5V
Supply Current●8.511.08.712.5mA
= 25°C, offset voltage is measured with the chip heated to
A
during the first 30 days are typically 2.5µV.
ICS
RL ≥ 1k, VO = ±10V4.018.02.518.0V/µV
RL ≥ 600Ω (Note 10)±9.5 ±11.0±9.0±10.5V
ICS
RL ≥ 1k, VO = ±10V3.014.02.014.0V/µV
The ● denotes the specifications which apply over the temperature range
LT1028AC
LT1128AC
LT1028C
LT1128C
The ● denotes the specifications which apply over the temperature range
LT1028AC
LT1128AC
on an RMS basis) is divided by the sum of the two source resistors to
obtain current noise. Maximum 10Hz current noise can be inferred from
100% testing at 1kHz.
Note 7: Gain-bandwidth product is not tested. It is guaranteed by design
and by inference from the slew rate measurement.
Note 8: This parameter is not 100% tested.
Note 9: The inputs are protected by back-to-back diodes. Current-limiting
resistors are not used in order to achieve low noise. If differential input
voltage exceeds ±1.8V, the input current should be limited to 25mA.
Note 10: This parameter guaranteed by design, fully warmed up at T
70°C. It includes chip temperature increase due to supply and load
currents.
Note 11: The LT1028/LT1128 are designed, characterized and expected to
meet these extended temperature limits, but are not tested at –40°C and
85°C. Guaranteed I grade parts are available. Consult factory.
LT1028C
LT1128C
=
A
4
LPER
TEMPERATURE (°C)
–50
0
RMS VOLTAGE DENSITY (nV/√Hz)
0.8
2.0
0
50
75
LT1028/1128 • TPC09
O.4
1.6
1.2
–25
25
100
125
VS = ±15V
AT 10Hz
AT 1kHz
F
O
10Hz Voltage Noise Distribution
180
160
140
120
100
80
60
NUMBER OF UNITS
40
20
0
0.6
158
148
70
57
28
8
7
4
232
22
1
1.62.0 2.2
0.81.2
1.0
VOLTAGE NOISE DENSITY (nV/√Hz)
1.4
R
ATYPICA
VS = ±15V
T
= 25°C
A
500 UNITS
MEASURED
FROM 4 RUNS
3
2
11
1.8
LT1020/1120 • TPC01
UW
E
C
1
CCHARA TERIST
Wideband Noise, DC to 20kHz
VERTICAL SCALE = 0.5µV/DIV
HORIZONTAL SCALE = 0.5ms/DIV
ICS
LT1028/LT1128
Wideband Voltage Noise
(0.1Hz to Frequency Indicated)
10
VS = ±15V
= 25°C
T
A
1
0.1
RMS VOLTAGE NOISE (µV)
0.01
100
BANDWIDTH (Hz)
100k1M10M
10k1k
LT1028/1128 • TPC03
Total Noise vs Matched Source
Resistance
100
R
S
–
R
S
+
10
AT 10Hz
TOTAL NOISE DENSITY (nV/√Hz)
1
0.1
1
31k10k
MATCHED SOURCE RESISTANCE (Ω)
2 RS NOISE ONLY
10 30 100 3003k
0.1Hz to 10Hz Voltage Noise
VS = ±15V
= 25°C
T
A
AT 1kHz
VS = ±15V
= 25°C
T
A
LT1028/1128 • TPC04
Total Noise vs Unmatched
Source ResistanceCurrent Noise Spectrum
100
R
S
10
AT 10Hz
1
TOTAL NOISE DENSITY (nV/√Hz)
0.1
1
31k10k
UNMATCHED SOURCE RESISTANCE (Ω)
2 RS NOISE ONLY
10 30 100 3003k
0.01Hz to 1Hz Voltage Noise
VS = ±15V
= 25°C
T
A
AT 1kHz
VS = ±15V
= 25°C
T
A
LT1028/1128 • TPC05
100
MAXIMUM
10
1/f CORNER = 800Hz
TYPICAL
1
1/f CORNER = 250Hz
CURRENT NOISE DENSITY (pA/√Hz)
0.1
10
1001k10k
FREQUENCY (Hz)
Voltage Noise vs Temperature
LT1028/1128 • TPC06
10nV
10nV
2
08
4
TIME (SEC)
6
10
LT1028/1128 • TPC07
080
20
40
TIME (SEC)
60
100
LT1028/1128 • TPC08
5
LT1028/LT1128
COMMON MODE INPUT VOLTAGE (V)
–15
–80
INPUT BIAS CURRENT (nA)
–60
–20
0
20
–5
5
15
100
LT1028/1128 • TPC15
–40
–100
40
60
80
10
RCM =
20V
65nA
≈ 300MΩ
V
S
= ±15V
T
A
= 25°C
POSITIVE INPUT CURRENT
(UNDERCANCELLED) DEVICE
NEGATIVE INPUT CURRENT
(OVERCANCELLED) DEVICE
LPER
F
O
R
ATYPICA
UW
CCHARA TERIST
E
C
ICS
Distribution of Input Offset
Voltage
20
VS = ±15V
18
= 25°C
T
A
800 UNITS TESTED
16
FROM FOUR RUNS
14
12
10
UNITS (%)
8
6
4
2
0
–40
–30
24
20
16
12
8
–50
VS = ±15V
T
–20
OFFSET VOLTAGE (µV)
= 25°C
A
–10
METAL CAN (H) PACKAGE
Offset Voltage Drift with
Temperature of Representative Units
50
VS = ±15V
40
30
20
10
0
–10
–20
OFFSET VOLTAGE (µV)
–30
–40
–50
0
10
20
30
40
50
LT1028/1128 • TPC10
–50
–25
0
TEMPERATURE (°C)
50
25
75
LT1028/1128 • TPC11
100
125
Input Bias and Offset Currents
Over Temperature
60
VS = ±15V
= 0V
V
CM
50
40
30
20
BIAS CURRENT
Long-Term Stability of Five
Representative Units
10
VS = ±15V
8
= 25°C
T
A
t = 0 AFTER 1 DAY PRE-WARM UP
6
4
2
0
–2
–4
–6
OFFSET VOLTAGE CHANGE (µV)
–8
–10
1
0
TIME (MONTHS)
3
2
Bias Current Over the Common
Mode RangeWarm-Up Drift
4
LT1028/1128 • TPC12
5
4
CHANGE IN OFFSET VOLTAGE (µV)
0
0
Voltage Noise vs Supply Voltage
1.5
TA = 25°C
1.25
1.0
0.75
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
0.5
0
6
DUAL-IN-LINE PACKAGE
PLASTIC (N) OR CERDIP (J)
1234
TIME AFTER POWER ON (MINUTES)
LT1028/1128 • TPC13
AT 10Hz
±5±10
SUPPLY VOLTAGE (V)
AT 1kHz
±15
LT1028/1128 • TPC16
±20
10
INPUT BIAS AND OFFSET CURRENTS (nA)
5
0
–50
–250
Supply Current vs Temperature
10
9
8
7
6
5
4
3
SUPPLY CURRENT (mA)
2
1
0
–50
–25
OFFSET CURRENT
50100 125
2575
TEMPERATURE (˚C)
VS = ±15V
VS = ±5V
50
25
0
TEMPERATURE (°C)
LT1028/1128 • TPC14
75
100
LT1028/1128 • TPC17
Output Short-Circuit Current
vs Time
50
40
30
20
SOURCING
10
0
–10
–20
–30
SINKING
SHORT-CIRCUIT CURRENT (mA)
–40
–50
125
0
TIME FROM OUTPUT SHORT TO GROUND (MINUTES)
25°C
25°C
2
VS = ±15V
3
LT1028/1128 • TPC18
–50°C
125°C
125°C
–50°C
1
LPER
FREQUENCY (Hz)
10k
5
PEAK-TO-PEAK OUTPUT VOLTAGE (V)
20
25
30
100k1M10M
LT1028/1128 • TPC27
15
10
LT1128LT1028
VS = ±15V
T
A
= 25°C
R
L
= 2k
LT1028/LT1128
UW
R
F
O
ATYPICA
CCHARA TERIST
E
C
ICS
Voltage Gain vs Frequency
160
140
120
100
80
60
40
VOLTAGE GAIN (dB)
20
0
–20
0.01
LT1128LT1028
0.1 1 10 100 1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
Gain Error vs Frequency
Closed-Loop Gain = 1000
1
TYPICAL
PRECISION
OP AMP
0.1
GAIN ERROR (%)
0.01
CLOSED-LOOP GAIN
OPEN-LOOP GAIN
1100
FREQUENCY (Hz)
0.001
GAIN ERROR =
0.1
VS = ±15V
T
R
LT1028/1128 • TPC19
LT1128
LT1028
10
LT1028/1128 • TPC22
= 25°C
A
= 2k
L
LT1028
Gain, Phase vs Frequency
70
60
50
40
30
20
VOLTAGE GAIN (dB)
10
VS = ±15V
0
= 25°C
T
A
C
= 10pF
L
–10
10k1M10M100M
100k
PHASE
GAIN
FREQUENCY (Hz)
LT1028/1128 • TPC20
LT1128
Gain Phase vs Frequency
70
60
50
40
30
20
VOLTAGE GAIN (dB)
10
VS = ±15V
0
= 25°C
T
A
= 10pF
C
L
–10
10k1M10M100M
100k
FREQUENCY (Hz)
PHASE
GAIN
LT1028/1128 • TPC23
70
60
50
40
30
20
10
0
–10
70
60
50
40
30
20
10
0
–10
OVERSHOOT (%)
PHASE MARGIN (DEG)
OVERSHOOT (%)
PHASE MARGIN (DEG)
LT1028
Capacitance Load Handling
80
70
60
50
40
30
20
10
0
R
S
10
30pF
2k
–
+
C
L
AV = –1, RS = 2k
AV = –10
R
= 200Ω
S
AV = –100
= 20Ω
R
S
100100010000
CAPACITIVE LOAD (pF)
LT1128
Capacitance Load Handling
80
70
60
50
40
30
20
10
0
10
30pF
2k
R
S
–
+
C
L
AV = –1, RS = 2k
AV = –10
= 200Ω
R
S
AV = –100, RS = 20Ω
100100010000
CAPACITIVE LOAD (pF)
VS = ±15V
= 25°C
T
A
LT1028/1128 • TPC21
VS = ±15V
= 25°C
T
A
V
= 10mV
O
LT1028/1128 • TPC 24
P-P
Voltage Gain vs Supply VoltageVoltage Gain vs Load Resistance
100
TA = 25°C
RL = 2k
10
VOLTAGE GAIN (V/µV)
1
0
±5
SUPPLY VOLTAGE (V)
R
= 600Ω
L
±10
±15
LT`1028/1128 • TPC25
±20
Maximum Undistorted Output
vs Frequency
100
VS = ±15V
TA = –55°C
10
VOLTAGE GAIN (V/µV)
1
0.1
LOAD RESISTANCE (kΩ)
TA = 25°C
TA = 125°C
I
= 35mA AT –55°C
LMAX
= 27mA AT 25°C
= 16mA AT 125°C
110
LT1028/1128 • TPC26
7
LT1028/LT1128
TEMPERATURE (°C)
–50
0
SLEW RATE (V/µs)
1
3
4
5
0
50
100
9
LT1028/1128 • TPC33
2
–2525
6
7
8
75125
20
10
30
GAIN-BANDWIDTH PRODUCT (f
O
= 200kHz), (MHz)
FALL
RISE
GBW
OVER-COMPENSATION CAPACITOR (pF)
1
SLEW RATE (V/µs)
10
1100100010000
LT1028/1128 • TPC36
0.1
10
100
1k
10k
GAIN AT 20kHz
COC FROM PIN 5 TO PIN 6
V
S
= ±15V
T
A
= 25°C
SLEWGBW
100
10
LPER
LT1028
Large-Signal Transient Response
10V
5V/DIV
–10V
F
O
R
ATYPICA
UW
CCHARA TERIST
E
C
LT1028
Small-Signal Transient Response
50mV
20mV/DIV
–50mV
ICS
LT1028
Slew Rate, Gain-Bandwidth
Product Over Temperature
18
VS = ±15V
17
16
15
14
SLEW RATE (V/µs)
GBW
FALL
RISE
GAIN-BANDWIDTH PRODUCT (f
90
80
70
60
O
= 20kHz), (MHz)
50
1µs/DIV
= –1, RS = RF = 2k, CF = 15pF
A
V
LT1128
Large-Signal Transient Response
10V
0V
–10V
2µs/DIV
A
= –1, RS = RF = 2k, CF = 30pF
V
100
IO = 1mA
= ±15V
V
S
= 25°C
T
A
10
AV = 1000
1
0.1
OUTPUT IMPEDANCE (Ω)
0.01
0.001
8
100
10
LT1128
LT1128
1k
FREQUENCY (Hz)
LT1028
A
10k
LT1028
= 5
V
100k
1M
LT1028/1128 • TPC34
0.2µs/DIV
AV = –1, RS = RF = 2k
C
= 15pF, CL = 80pF
F
LT1128
Small-Signal Transient Response
50mV
0V
–50mV
0.2µs/DIV
A
= 1, CL = 10pF
V
LT1128
Slew Rate, Gain-Bandwidth Product
vs Over-Compensation CapacitorClosed-Loop Output Impedance
100
100
GBW
10
10
1
1
SLEW RATE (V/µs)
0.1
0.1
1100100010000
1100100010000
GBW
SLEW RATE
SLEW RATE
10
10
OVER-COMPENSATION CAPACITOR (pF)
OVER-COMPENSATION CAPACITOR (pF)
LT1028/1128 • TPC35
LT1028/1128 • TPC35
1k
1k
GAIN AT 200kHz
100
100
10
10
1
1
13
12
–50
–250
TEMPERATURE (˚C)
50100 125
2575
LT1028/1128 • TPC30
LT1128
Slew Rate, Gain-Bandwidth
Product Over Temperature
LT1028
Slew Rate, Gain-Bandwidth Product
vs Over-Compensation Capacitor
40
30
LPER
LT1028/LT1128
UW
R
F
O
ATYPICA
CCHARA TERIST
E
C
ICS
Common Mode Limit Over
Temperature
+
V
–1
–25
0
VS = ±5V
= ±15V
V
S
VS = ±5V TO ±15V
50
25
TEMPERATURE (°C)
–2
–3
–4
4
3
COMMON MODE LIMIT (V)
2
REFERRED TO POWER SUPPLY
1
–
V
–50
LT1028
Total Harmonic Distortion vs
Frequency and Load Resistance
0.1
AV = 1000
= 600Ω
R
L
AV = 1000
= 2k
R
L
75
100
LT1028/1128 • TPC37
125
Common Mode Rejection Ratio
vs Frequency
140
120
100
80
60
40
20
COMMON MODE REJECTION RATIO (dB)
0
10
LT1128LT1028
1001k
FREQUENCY (Hz)
100k10M
10k1M
LT1028
Total Harmonic Distortion vs
Closed-Loop Gain
0.1
VO = 20V
P-P
0.01
f = 1kHz
= ±15V
V
S
= 25°C
T
A
= 10k
R
L
NON-INVERTING
VS = ±15V
T
A
LT1028/1128 • TPC38
GAIN
= 25°C
Power Supply Rejection Ratio
vs Frequency
160
140
120
1k
NEGATIVE
SUPPLY
10k
100
10
1
POSITIVE
SUPPLY
100
FREQUENCY (Hz)
80
60
40
20
POWER SUPPLY REJECTION RATIO (dB)
0
0.1
High Frequency Voltage Noise
vs Frequency
10
VS = ±15V
= 25°C
T
A
1M
100k
LT1028/1128 • TPC39
10M
0.01
TOTAL HARMONIC DISTORTION (%)
0.001
1
10 100
FREQUENCY (kHz)
1.0
0.1
0.01
TOTAL HARMONIC DISTORTION (%)
0.001
1.0
AV = –1000
= 2k
R
L
AV = 1000
= 600Ω
R
L
VO = 20V
VS = ±15V
= 25°C
T
A
LT1028/1128 • TPC40
P-P
0.001
TOTAL HARMONIC DISTORTION (%)
0.0001
101k10k100k
LT1128
Total Harmonic Distortion vs
Frequency and Load Resistance
AV = 1000
= 600Ω
R
AV = 1000
= 2k
R
L
L
AV = –1000
R
= 2k
L
AV = 1000
R
= 600Ω
L
10100
FREQUENCY (kHz)
VO = 20V
VS = ±15V
= 25°C
T
A
LT1028/1128 • TPC43
P-P
100
CLOSED LOOP GAIN
INVERTING
GAIN
MEASURED
EXTRAPOLATED
LT1028/1128 • TPC41
LT1128
Total Harmonic Distortion vs
Closed-Loop Gain
0.1
VO = 20V
f = 1kHz
= ±15V
V
S
= 25°C
T
A
= 10k
R
L
0.01
0.001
TOTAL HARMONIC DISTORTION (%)
0.0001
101k10k100k
100
1.0
NOISE VOLTAGE DENSITY (nV/÷Hz)
0.1
10k
P-P
NON-INVERTING
CLOSED LOOP GAIN
FREQUENCY (Hz)
GAIN
INVERTING
GAIN
MEASURED
EXTRAPOLATED
LT1028/1128 • TPC44
100k1M
LT1028/1128 • TPC42
9
LT1028/LT1128
PPLICATI
A
U
O
S
IFORATIO
WU
U
U
– OISE
Voltage Noise vs Current Noise
The LT1028/LT1128’s less than 1nV/√Hz voltage noise is
three times better than the lowest voltage noise heretofore
available (on the LT1007/1037). A necessary condition for
such low voltage noise is operating the input transistors at
nearly 1mA of collector currents, because voltage noise is
inversely proportional to the square root of the collector
current. Current noise, however, is directly proportional to
the square root of the collector current. Consequently, the
LT1028/LT1128’s current noise is significantly higher
than on most monolithic op amps.
Therefore, to realize truly low noise performance it is
important to understand the interaction between voltage
noise (en), current noise (In) and resistor noise (rn).
Total Noise vs Source Resistance
The total input referred noise of an op amp is given by
et = [e
2
+ r
n
+ (InReq)
n
2]1/2
2
where Req is the total equivalent source resistance at the
two inputs, and
rn = √4kTReq = 0.13√Req in nV/√Hz at 25°C
As a numerical example, consider the total noise at 1kHz
of the gain 1000 amplifier shown below.
largest term, as in the example above, and the LT1028/
LT1128’s voltage noise becomes negligible. As Req is
further increased, current noise becomes important. At
1kHz, when Req is in excess of 20k, the current noise
component is larger than the resistor noise. The total noise
versus matched source resistance plot illustrates the
above calculations.
The plot also shows that current noise is more dominant
at low frequencies, such as 10Hz. This is because resistor
noise is flat with frequency, while the 1/f corner of current
noise is typically at 250Hz. At 10Hz when Req > 1k, the
current noise term will exceed the resistor noise.
When the source resistance is unmatched, the total noise
versus unmatched source resistance plot should be consulted. Note that total noise is lower at source resistances
below 1k because the resistor noise contribution is less.
When RS > 1k total noise is not improved, however. This
is because bias current cancellation is used to reduce
input bias current. The cancellation circuitry injects two
correlated current noise components into the two inputs.
With matched source resistors the injected current noise
creates a common-mode voltage noise and gets rejected
by the amplifier. With source resistance in one input only,
the cancellation noise is added to the amplifier’s inherent
noise.
100Ω
100Ω
100k
–
LT1028
LT1128
+
1028/1128 AI01
Req = 100Ω + 100Ω || 100k ≈ 200Ω
rn = 0.13√200 = 1.84nV√Hz
en = 0.85nV√Hz
In = 1.0pA/√Hz
et = [0.852 + 1.842 + (1.0 × 0.2)
2]1/2
= 2.04nV/√Hz
Output noise = 1000 et = 2.04µV/√Hz
At very low source resistance (Req < 40Ω) voltage noise
dominates. As Req is increased resistor noise becomes the
10
In summary, the LT1028/LT1128 are the optimum amplifiers for noise performance, provided that the source
resistance is kept low. The following table depicts which
op amp manufactured by Linear Technology should be
used to minimize noise, as the source resistance is increased beyond the LT1028/LT1128’s level of usefulness.
Best Op Amp for Lowest Total Noise vs Source Resistance
SOURCE RESIS-
TANCE(Ω) (Note 1)
0 to 400LT1028/LT1128LT1028/LT1128
400 to 4kLT1007/1037LT1028/LT1128
4k to 40kLT1001LT1007/1037
40k to 500kLT1012LT1001
500k to 5MLT1012 or LT1055LT1012
>5MLT1055LT1055
Note 1: Source resistance is defined as matched or unmatched, e.g.,
= 1k means: 1k at each input, or 1k at one input and zero at the other.
R
S
AT LOW FREQ(10Hz)WIDEBAND(1kHz)
BEST OP AMP
LT1028/LT1128
PPLICATI
A
U
O
S
IFORATIO
WU
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U
– OISE
Noise Testing – Voltage Noise
The LT1028/LT1128’s RMS voltage noise density can be
accurately measured using the Quan Tech Noise Analyzer,
Model 5173 or an equivalent noise tester. Care should be
taken, however, to subtract the noise of the source resistor
used. Prefabricated test cards for the Model 5173 set the
device under test in a closed-loop gain of 31 with a 60Ω
source resistor and a 1.8k feedback resistor. The noise of
this resistor combination is 0.13√58 = 1.0nV/√Hz. An
LT1028/LT1128 with 0.85nV/√Hz noise will read (0.852 +
1/2
1.02)
= 1.31nV/√Hz. For better resolution, the resistors
should be replaced with a 10Ω source and 300Ω feedback
resistor. Even a 10Ω resistor will show an apparent noise
which is 8% to 10% too high.
The 0.1Hz to 10Hz peak-to-peak noise of the LT1028/
LT1128 is measured in the test circuit shown. The frequency response of this noise tester indicates that the
0.1Hz corner is defined by only one zero. The test time to
measure 0.1Hz to 10Hz noise should not exceed 10
seconds, as this time limit acts as an additional zero to
eliminate noise contributions from the frequency band
below 0.1Hz.
Measuring the typical 35nV peak-to-peak noise performance of the LT1028/LT1128 requires special test precautions:
(a) The device should be warmed up for at least five
minutes. As the op amp warms up, its offset voltage
changes typically 10µV due to its chip temperature
increasing 30°C to 40°C from the moment the power
supplies are turned on. In the 10 second measurement interval these temperature-induced effects can
easily exceed tens of nanovolts.
(b) For similar reasons, the device must be well shielded
from air current to eliminate the possibility of thermoelectric effects in excess of a few nanovolts, which
would invalidate the measurements.
(c) Sudden motion in the vicinity of the device can also
“feedthrough” to increase the observed noise.
A noise-voltage density test is recommended when measuring noise on a large number of units. A 10Hz noisevoltage density measurement will correlate well with a
0.1Hz to 10Hz peak-to-peak noise reading since both
results are determined by the white noise and the location
of the 1/f corner frequency.
0.1Hz to 10Hz Noise Test Circuit
0.1µF
100k
–
10Ω
VOLTAGE GAIN = 50,000
* DEVICE UNDER TEST
NOTE ALL CAPACITOR VALUES ARE FOR
NONPOLARIZED CAPACITORS ONLY
*
+
2k
4.7µF
+
24.3k
LT1001
–
100k
0.1µF
4.3k
2.2µF
22µF
SCOPE
× 1
R
IN
110k
1028/1128 AI02
= 1M
0.1Hz to 10Hz Peak-to-Peak Noise
Tester Frequency Response
100
90
80
70
60
GAIN (dB)
50
40
30
0.011.010100
0.1
FREQUENCY (Hz)
LT1028/1128 • AI03
11
LT1028/LT1128
FREQUENCY (Hz)
100
–50
NOISE FILTER LOSS (dB)
–10
0
10
1k10k100k
LT1028/1128 • AI05
–20
–40
–30
CURRENT
NOISE
VOLTAGE
NOISE
PPLICATI
A
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O
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IFORATIO
WU
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– OISE
Noise Testing – Current Noise
Current noise density (In) is defined by the following
formula, and can be measured in the circuit shown:
In =
2
– (31 × 18.4nV/√Hz)2]
[e
no
1/2
20k × 31
1.8k
10k
–
60Ω
10k
LT1028
LT1128
+
1028/1128 AI04
e
no
If the Quan Tech Model 5173 is used, the noise reading is
input-referred, therefore the result should not be divided
by 31; the resistor noise should not be multiplied by 31.
100% Noise Testing
10Hz voltage noise density is sample tested on every lot.
Devices 100% tested at 10Hz are available on request for
an additional charge.
10Hz current noise is not tested on every lot but it can be
inferred from 100% testing at 1kHz. A look at the current
noise spectrum plot will substantiate this statement. The
only way 10Hz current noise can exceed the guaranteed
limits is if its 1/f corner is higher than 800Hz and/or its
white noise is high. If that is the case then the 1kHz test will
fail.
Automated Tester Noise Filter
The 1kHz voltage and current noise is 100% tested on the
LT1028/LT1128 as part of automated testing; the approximate frequency response of the filters is shown. The limits
on the automated testing are established by extensive
correlation tests on units measured with the Quan Tech
Model 5173.
PPLICATI
A
General
The LT1028/LT1128 series devices may be inserted directly into OP-07, OP-27, OP-37, LT1007 and LT1037
sockets with or without removal of external nulling components. In addition, the LT1028/LT1128 may be fitted to
5534 sockets with the removal of external compensation
components.
Offset Voltage Adjustment
The input offset voltage of the LT1028/LT1128 and its drift
with temperature, are permanently trimmed at wafer testing to a low level. However, if further adjustment of VOS is
necessary, the use of a 1k nulling potentiometer will not
degrade drift with temperature. Trimming to a value other
O
U
S
IFORATIO
WU
U
INPUT
1k
1
2
3
–
LT1028
LT1128
+
8
4
–15V
15V
7
6
OUTPUT
1028/1128 AI06
than zero creates a drift of (VOS/300)µV/°C, e.g., if VOS is
adjusted to 300µV, the change in drift will be 1µV/°C.
The adjustment range with a 1k pot is approximately
±1.1mV.
Offset Voltage and Drift
Thermocouple effects, caused by temperature gradients
across dissimilar metals at the contacts to the input
12
LT1028/LT1128
1028/1128 AI09
–
+
33pF
2k
LT1028
50Ω
–
+
LT1028
50Ω
500Ω
PPLICATI
A
U
O
S
IFORATIO
WU
U
terminals, can exceed the inherent drift of the amplifier
unless proper care is exercised. Air currents should be
minimized, package leads should be short, the two input
leads should be close together and maintained at the same
temperature.
The circuit shown to measure offset voltage is also used
as the burn-in configuration for the LT1028/LT1128.
Test Circuit for Offset Voltage
and Offset Voltage Drift with Temperature
10k*
15V
2
200Ω*
3
10k*
V
O
* RESISTORS MUST HAVE LOW
THERMOELECTRIC POTENTIAL
–
LT1028
LT1128
+
= 100V
–15V
OS
7
6
4
V
O
1028/1128 AI08
Frequency Response
The LT1028’s Gain, Phase vs Frequency plot indicates that
the device is stable in closed-loop gains greater than +2 or
–1 because phase margin is about 50° at an open-loop
gain of 6dB. In the voltage follower configuration phase
margin seems inadequate. This is indeed true when the
output is shorted to the inverting input and the noninverting input is driven from a 50Ω source impedance. However, when feedback is through a parallel R-C network
(provided CF < 68pF), the LT1028 will be stable because of
interaction between the input resistance and capacitance
and the feedback network. Larger source resistance at the
noninverting input has a similar effect. The following
voltage follower configurations are stable:
Unity-Gain Buffer Applications (LT1128 Only)
When RF ≤ 100Ω and the input is driven with a fast, largesignal pulse (>1V), the output waveform will look as
shown in the pulsed operation diagram.
R
F
–
OUTPUT
+
6V/µs
1028/1128 AI07
During the fast feedthrough-like portion of the output, the
input protection diodes effectively short the output to the
input and a current, limited only by the output short-circuit
protection, will be drawn by the signal generator. With R
F
≥ 500Ω, the output is capable of handling the current
requirements (IL ≤ 20mA at 10V) and the amplifier stays
in its active mode and a smooth transition will occur.
As with all operational amplifiers when RF > 2k, a pole will
be created with RF and the amplifier’s input capacitance,
creating additional phase shift and reducing the phase
margin. A small capacitor (20pF to 50pF) in parallel with R
will eliminate this problem.
F
Another configuration which requires unity-gain stability
is shown below. When CF is large enough to effectively
short the output to the input at 15MHz, oscillations can
occur. The insertion of RS2 ≥ 500Ω will prevent the
LT1028 from oscillating. When RS1 ≥ 500Ω, the additional
noise contribution due to the presence of RS2 will be
minimal. When RS1 ≤ 100Ω, RS2 is not necessary, because RS1 represents a heavy load on the output through
the CF short. When 100Ω < RS1 < 500Ω, RS2 should match
RS1 . For example, RS1 = RS2 = 300Ω will be stable. The
noise increase due to RS2 is 40%.
C1
R1
R
S1
R
S2
–
LT1028
+
1028/1128 AI10
13
LT1028/LT1128
PPLICATI
A
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O
S
IFORATIO
WU
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If CF is only used to cut noise bandwidth, a similar effect
can be achieved using the over-compensation terminal.
The Gain, Phase plot also shows that phase margin is
about 45° at gain of 10 (20dB). The following configura-
10pF
10k
1.1k
–
LT1028
+
50Ω
1028/1128 AI11
U
TYPICAL APPLICATIO S
tion has a high (≈70%) overshoot without the 10pF
capacitor because of additional phase shift caused by the
feedback resistor – input capacitance pole. The presence
of the 10pF capacitor cancels this pole and reduces
overshoot to 5%.
Over-Compensation
The LT1028/LT1128 are equipped with a frequency overcompensation terminal (Pin 5). A capacitor connected
between Pin 5 and the output will reduce noise bandwidth.
Details are shown on the Slew Rate, Gain-Bandwidth
Product vs Over-Compensation Capacitor plot. An additional benefit is increased capacitive load handling capability.
Strain Gauge Signal Conditioner with Bridge Excitation
15V
LT1021-5
350Ω
BRIDGE
3
2
5.0V
–
LT1028
+
3
2
15V
–15V
+
LT1128
–
7
4
7
4
–15V
6
330Ω
6
REFERENCE
OUTPUT
301k*
10k
ZERO
TRIM
*RN60C FILM RESISTORS
330Ω
THE LT1028’s NOISE CONTRIBUTION IS NEGLIGIBLE
COMPARED TO THE BRIDGE NOISE.
15V
7
3
–
LT1028
2
+
4
–15V
6
1µF
5k
GAIN
TRIM
0V TO 10V
OUTPUT
30.1k*
49.9Ω*
1028/1128 TA05
28V
LT1021-10
Low Noise Voltage Regulator
1k
+
LT1028
–
330Ω
1000pF
10
28V
LT317A
10
+
2N6387
2k
2k
121Ω
2.3k
PROVIDES PRE-REG
AND CURRENT
LIMITING
20V OUTPUT
1028/1128 TA04
14
TYPICAL APPLICATIO S
LT1028/LT1128
U
Paralleling Amplifiers to Reduce Voltage Noise
+
A1
LT1028
1.5k
–
7.5Ω
7.5Ω
+
LT1028
–
+
LT1028
470Ω
4.7k
A2
470Ω
An
1.5k
1.5k
–
LT1028
+
–
7.5Ω
1. ASSUME VOLTAGE NOISE OF LT1028 AND 7.5Ω SOURCE RESISTOR = 0.9nV/√Hz.
2. GAIN WITH n LT1028s IN PARALLEL = n × 200.
3. OUTPUT NOISE = √n × 200 × 0.9nV/√Hz.
4. INPUT REFERRED NOISE = = nV/√Hz.
5. NOISE CURRENT AT INPUT INCREASES √n TIMES.
6. IF n = 5, GAIN = 1000, BANDWIDTH = 1MHz, RMS NOISE, DC TO 1MHz = = 0.9µV.
GAIN = 1000, BANDWIDTH = 1MHz
INPUT REFERRED NOISE = 1.5nV/√Hz AT 1kHz
WIDEBAND NOISE –DC to 1MHz = 3µV
IF BW LIMITED TO DC TO 100kHz = 0.55µV
+
820Ω
OUTPUT
1028/1128 TA08
SINE
DRIVE
Gyro Pick-Off Amplifier
GYRO TYPICAL–
NORTHROP CORP.
GR-F5AH7-5B
•
+
LT1028
–
OUTPUT TO SYNC
DEMODULATOR
1k
100Ω
1028/1128 TA09
15
LT1028/LT1128
TYPICAL APPLICATIO S
U
Super Low Distortion Variable Sine Wave Oscillator
5.6k
10k
20k
R1
20Ω2k
+
LT1028
–
10pF
100k
TRIM FOR
LOWEST
DISTORTION
15µF
LT1055
C2
0.047
+
22k
1V
OUTPUT
RMS
1.5kHz TO 15kHz
1
f =
()
2πRC
WHERE R1C1 = R2C2
–
MOUNT 1N4148s
IN CLOSE PROXIMITY
4.7k
LT1004-1.2V
15V
+
10k
1028/1128 TA10
C1
0.047
20Ω
2k
R2
2.4k
2N4338
560Ω
<0.0018% DISTORTION AND NOISE.
MEASUREMENT LIMITED BY RESOLUTION OF
HP339A DISTORTION ANALYZER
INPUT
1028/1128 TA11
Chopper-Stabilized Amplifier
15V
1N758
3
2
0.1
100k
+
–
LT1052
1
–15V
7
4
1N758
130Ω
6
8
0.1
0.01
15V
68Ω
1
7
3
+
LT1028
2
–
4
–15V
30k
8
OUTPUT
10k
10Ω
16
LT1028/LT1128
S
CH
NULL
1
NON-
INVERTING
INPUT
3
INVERTING
INPUT
2
E
4.5µA
W
A
TI
Q1
BIAS
R5
130Ω
R1
3k
900µA
4.5µA
ICDAGRA
NULL
8
R6
130Ω
R2
3k
900µA
Q5
3
1
Q7
4.5µA
Q2
0
1.8mA
Q3
4.5µA
W
Q8
Q4
C1
257pF
+
V
7
1.1mA
R10
Q17
Q16
Q18
Q6
3
1
Q9
Q12
1.5µA
1.5µA
Q10
Q11
Q13
Q14
300µA
Q15
400Ω
Q19
R11
400Ω
R11
100Ω
250pF
C3
240Ω
R12
R10
500Ω
Q22
35pF
2.3mA
C4
400µA
500µA
C2
Q26
OUTPUT
6
Q27
Q23
Q24
Q25
–
V
4
C2 = 50pF for LT1028
C2 = 275pF for LT1128
R7
80Ω
R8
480Ω
Q20
Q21
5
OVERCOMP
600µA
1028/1128 TA13
17
LT1028/LT1128
PACKAGE DESCRIPTIO
U
OBSOLETE PACKAGE
(0.203 – 0.457)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
0.300 – 0.325
(7.620 – 8.255)
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.300 BSC
(0.762 BSC)
0.008 – 0.018
J8 Package
8-Lead CERDIP (Narrow .300 Inch, Hermetic)
(Reference LTC DWG # 05-08-1110)
CORNER LEADS OPTION
(4 PLCS)
0° – 15°
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.005
(0.127)
MIN
0.025
(0.635)
RAD TYP
0.045 – 0.065
(1.143 – 1.651)
0.014 – 0.026
(0.360 – 0.660)
87
12
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
0.045 – 0.065
(1.143 – 1.651)
0.130 ± 0.005
(3.302 ± 0.127)
0.405
(10.287)
MAX
65
3
4
0.220 – 0.310
(5.588 – 7.874)
0.015 – 0.060
(0.381 – 1.524)
0.100
(2.54)
BSC
0.200
(5.080)
MAX
0.125
3.175
MIN
J8 1298
0.400*
(10.160)
MAX
876
5
0.065
(1.651)
0.009 – 0.015
(0.229 – 0.381)
+0.035
0.325
–0.015
+0.889
8.255
()
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
TYP
0.100
(2.54)
BSC
8-Lead Plastic Small Outline (Narrow .150 Inch)
0.010 – 0.020
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
*
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
× 45°
0.016 – 0.050
(0.406 – 1.270)
0.053 – 0.069
(1.346 – 1.752)
0°– 8° TYP
0.014 – 0.019
(0.355 – 0.483)
TYP
0.125
0.020
(3.175)
MIN
(0.508)
0.018 ± 0.003
(0.457 ± 0.076)
MIN
S8 Package
(Reference LTC DWG # 05-08-1610)
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
BSC
0.255 ± 0.015*
(6.477 ± 0.381)
0.228 – 0.244
(5.791 – 6.197)
0.189 – 0.197*
(4.801 – 5.004)
7
8
1
2
12
5
6
3
4
4
3
N8 1098
0.150 – 0.157**
(3.810 – 3.988)
SO8 1298
18
PACKAGE DESCRIPTIO
U
S Package
16-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
0.386 – 0.394*
(9.804 – 10.008)
13
16
14
15
12
LT1028/LT1128
11
10
9
0.010 – 0.020
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
*
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
45°TYP
0.028 – 0.034
(0.711 – 0.864)
0.110 – 0.160
(2.794 – 4.064)
INSULATING
STANDOFF
*
LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE
AND 0.045" BELOW THE REFERENCE PLANE
**
FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS
×
°
45
0.016 – 0.050
(0.406 – 1.270)
0° – 8° TYP
0.027 – 0.045
(0.686 – 1.143)
PIN 1
(5.842)
0.016 – 0.024
(0.406 – 0.610)
0.228 – 0.244
(5.791 – 6.197)
2
1
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
TYP
H Package
3-Lead TO-39 Metal Can
(Reference LTC DWG # 05-08-1330)
0.040
(1.016)
MAX
0.230
SEATING
TYP
PLANE
0.010 – 0.045*
(0.254 – 1.143)
3
5
4
0.050
(1.270)
BSC
0.335 – 0.370
(8.509 – 9.398)
DIA
0.305 – 0.335
(7.747 – 8.509)
0.016 – 0.021**
(0.406 – 0.533)
0.150 – 0.157**
(3.810 – 3.988)
7
0.050
(1.270)
MAX
8
GAUGE
PLANE
0.004 – 0.010
(0.101 – 0.254)
S16 1098
0.165 – 0.185
(4.191 – 4.699)
0.500 – 0.750
(12.700 – 19.050)
REFERENCE
PLANE
H8 (TO-5) 0.230 PCD 1197
6
OBSOLETE PACKAGE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
19
LT1028/LT1128
TYPICAL APPLICATIO
5V
10Ω
1k
33Ω
+
100µF
RADIATION
IR
PHOTO-
ELECTRIC
PICK-OFF
OPTICAL
CHOPPER
WHEEL
267Ω
1000µF
+
INFRA RED ASSOCIATES, INC.
HgCdTe IR DETECTOR
13Ω AT 77°K
+
100µF
39Ω
U
Low Noise Infrared Detector
SYNCHRONOUS
DEMODULATOR
10k*10k*
5V
3
2
+
LT1028
–
–5V
7
6
8
4
10k
10Ω
1/4 LTC1043
13
14
12
16
2
3
+
LM301A
–
4
–5V
5V
7
1
6
8
1M
30pF
5V
2
3
+
LT1012
–
4
–5V
7
6
DC OUT
8
1
RELATED PARTS
PART NUMBERDESCRIPTIONCOMMENTS
LT1806/LT1807325MHz, 3.5nV/√Hz Single and Dual Op AmpsSlew Rate = 140V/µs, Low Distortion at 5MHz: –80dBc
1028/1128 TA12
20
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
1028fa LT/CP 0901 1.5K REV A • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1992
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