LG W5200, G5200 Service Manual

SERVICE MANUAL MODEL : G5200 / W5200
GSM Phone
SERVICE MANUAL
P/N : MMBD0015801 JUNE, 2002
MODEL : G5200/W5200
1. INTRODUCTION
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4
1.1 Purpose
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4
1.2 Regulatory Information
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4
A. Security
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4
B. Incidence of Harm
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4
C. Changes in Service
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4
D. Maintenance Limitations
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4
E. Notice of Radiated Emissions
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5
F. Pictures
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5
G. Interference and Attenuation
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5
H. Electrostatic Sensitive Devices
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5
1.3 Abbreviations
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6
2. PERFORMANCE
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8
2.1 H/W Feature
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8
2.2 Technical Specification
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9
3. TECHNICAL BRIEF
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13
3.1 General Descreption
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. 13
3.2 Receiver
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13
A. RF front end
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14
B. Demodulator and
baseband processing
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14
C. DC Offset Compensation
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14
3.3 Transmitter Part
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15
A. IF Modulator
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. 15
B. OPLL
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16
C. Synthesizer
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16
D. TX APC Part
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17
E. Power Amplifier
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17
3.4 13 MHz Clock
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18
3.5 Power Supplies and Control Signals
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18
3.6 Digital Main Processor
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19
3.7 Analog Main Processor
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24
3.8 Power Management
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26
3.9 Memories
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28
3.10 Display and Interfaces
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28
3.11 Keypad Switches and Scanning
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29
3.12 Microphone
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30
3.13 Earpiece
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31
3.14 Hands-free Interface
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32
3.15 Headset Jack Interface
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32
3.16 Key Back-light Illumination
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32
3.17 LCD Back-light Illumination
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33
3.18 Multi-Color LED Illumination
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33
3.19 Speaker & MIDI IC
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34
4. TROUBLE SHOOTING
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35
4.1 RF Components
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35
4.2 Tx Trouble
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44
4.3 Power on Trouble
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60
4.4 Charging Trouble
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62
4.5 LCD Trouble
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64
4.6 Receiver Trouble .
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66
4.7 Speaker Trouble
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69
4.8 Mic Trouble
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72
4.9 Vibrator Trouble
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75
4.10 Backlight Trouble
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77
4.11 Folder on/off Trouble
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79
4.12 SIM Detect Trouble
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81
4.13 Earphone Trouble
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83
4.14 HFK Trouble
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87
5. ASSEMBLY INSTRUCTION
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95
5.1 Disassembly
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95
6. DOWNLOAD
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102
6.1 Download Setup
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102
6.2 Download Procedure
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103
Table Of Contents
7. BLOCK DIAGRAM
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106
7.1 Main Board
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106
7.2 FPCB
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107
7.3 RF
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107
8. CIRCUIT DIAGRAM
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109
8.1 Baseband Interface
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109
8.2 MIDI
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110
8.3 KYE, I/F & LCD CON
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111
8.4 RF
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112
9. PCB LAYOUT
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113
10. ENGINEERING MODE
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115
10.1 BB Test [MENU 1]
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115
10.2 RF Test [MENU 2]
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117
10.3 MF Mode [MENU 3]
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118
10.4 Trace option [MENU 4]
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119
10.5 Call Timer [MENU 5]
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119
10.6 Fact. Reset [MENU 6]
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119
10.7 S/W version [MENU 7]
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119
11. STAND ALONE TEST
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120
11.1 Introduction
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120
11.2 Setting Method
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120
11.3 Means of Test
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120
12. AUTO CALIBRATION
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121
12.1 Overview
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121
12.2 Requirements
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121
12.3 Menu and settings
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121
12.4 AGC
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123
12.5 APC
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123
12.6 ADC
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123
12.7 Setting
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123
12.8 How to do calibration
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123
13. EXPLODED VIEW & REPLACEMENT PART LIST
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124
13.1 Exploded View
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124
13.2 Accessories
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126
13.3 Replacement Part List
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127
REVISED HISTORY
The information in this manual is subject to change without notice and should not be construed as a commitment by LGE Inc. Furthermore, LGE Inc. reserves the right, without notice, to make changes to equipment design as advances in engineering and manufacturing methods warrant.
This manual provides the information necessary to install, program, operate and maintain the G5200.
DATE ISSUE CONTENTS OF CHANGES S/W VERSION
APRIL/2002 ISSUE 1 Initial Release
1. INTRODUCTION
1. INTRODUCTION
1.1 Purpose
This manual provides the information necessary to repair, calibration, description and download the features of the G5200.
1.2 Regulatory Information
A. Security
Toll fraud, the unauthorized use of telecommunications system by an unauthorized part (for example, persons other than your company’s employees, agents, subcontractors, or person working on your company’s behalf) can result in substantial additional charges for your telecommunications services. System users are responsible for the security of own system. There are may be risks of toll fraud associated with your telecommunications system. System users are responsible for programming and configuring the equipment to prevent unauthorized use. LGE does not warrant that this product is immune from the above case but will prevent unauthorized use of common-carrier telecommunication service of facilities accessed through or connected to it. LGE will not be responsible for any charges that result from such unauthorized use.
B. Incidence of Harm
If a telephone company determines that the equipment provided to customer is faulty and possibly causing harm or interruption in service to the telephone network, it should disconnect telephone service until repair can be done. A telephone company may temporarily disconnect service as long as repair is not done.
C. Changes in Service
A local telephone company may make changes in its communications facilities or procedure. If these changes could reasonably be expected to affect the use of the G5200 or compatibility with the network, the telephone company is required to give advanced written notice to the user, allowing the user to take appropriate steps to maintain telephone service.
D. Maintenance Limitations
Maintenance limitations on the G5200 must be performed only by the LGE or its authorized agent. The user may not make any changes and/or repairs expect as specifically noted in this manual. Therefore, note that unauthorized alternations or repair may affect the regulatory status of the system and may void any remaining warranty.
1. INTRODUCTION
E. Notice of Radiated Emissions
The G5200 complies with rules regarding radiation and radio frequency emission as defined by local regulatory agencies. In accordance with these agencies, you may be required to provide information such as the following to the end user.
F. Pictures
The pictures in this manual are for illustrative purposes only; your actual hardware may look slightly different.
G. Interference and Attenuation
An G5200 may interfere with sensitive laboratory equipment, medical equipment, etc. Interference from unsuppressed engines or electric motors may cause problems.
H. Electrostatic Sensitive Devices
ATTENTION
Boards, which contain Electrostatic Sensitive Device (ESD), are indicated by the sign. Following information is ESD handling:
Service personnel should ground themselves by using a wrist strap when exchange system boards.
When repairs are made to a system board, they should spread the floor with anti-static mat which is also grounded.
Use a suitable, grounded soldering iron. Keep sensitive parts in these protective packages until these are used. When returning system boards or parts like EEPROM to the factory, use the protective package
as described.
1. INTRODUCTION
1.3 Abbreviations
For the purposes of this manual, following abbreviations apply:
APC Automatic Power Control BB Baseband BER Bit Error Ratio CC-CV Constant Current – Constant Voltage DAC Digital to Analog Converter DCS Digital Communication System dBm dB relative to 1 milliwatt DSP Digital Signal Processing EEPROM Electrical Erasable Programmable Read-Only Memory EL Electroluminescence ESD Electrostatic Discharge FPCB Flexible Printed Circuit Board GMSK Gaussian Minimum Shift Keying GPIB General Purpose Interface Bus GPRS General Packet Radio Service GSM Global System for Mobile Communications IPUI International Portable User Identity IF Intermediate Frequency LCD Liquid Crystal Display LDO Low Drop Output LED Light Emitting Diodet G5200 LG GSM Phone LGE LG Electronics OPLL Offset Phase Locked Loop PAM Power Amplifier Module PCB Printed Circuit Board PGA Programmable Gain Amplifier PLL Phase Locked Loopr PSTN Public Switched Telephone Network RF Radio Frequency RLR Receiving Loudness Rating RMS Root Mean Square RTC Real Time Clock SAW Surface Acoustic Wave SIM Subscriber Identity Module SLR Sending Loudness Rating SRAM Static Random Access Memory STMR Side Tone Masking Rating TA Travel Adapter
1. INTRODUCTION
TDD Time Division Duplex TDMA Time Division Multiple Access UART Universal Asynchronous Receiver/Transmitter VCO Voltage Controlled Oscillator VCTCXO Voltage Control Temperature Compensated Crystal Oscillator WAP Wireless Application Protocol
2. PERFORMANCE
2. PERFORMANCE
2.1 H/W Features
Item Feature Comment
Li-ion, 750 mAh
Standard Battery Size: 41 73.9 5mm
Weight: 22 g AVG TCVR Current GSM , EGSM: 243 mA, DCS: 209 mA Stand by Current < 4 mA Talk time Up to 3 hours (GSM TX Level 7) Stand by time Up to 200 hours (Paging Period: 9, RSSI: -85 dBm) Charging time 2 hours 30mins RX Sensitivity GSM, EGSM: -108 dBm, DCS: -107 dBm TX output power GSM, EGSM: 32 dBm (Level 5)
DCS: 29.5 dBm (Level 0) GPRS compatibility Class 10 (This only applies to G5200) SIM card type 3V Small Display 128 128 dots LCD(Main) , 96 64 dotsLCD(Sub)
Soft icons
Key Pad Status Indicator 0 ~ 9, #, *, Navigation Key, Up/Down Side Key
Side Key, Confirm Key, Clear Key , Hot Key)
Send Key, END/PWR Key ANT External EAR Phone Jack Yes PC Synchronization Yes Speech coding EFR/FR/HR Data and Fax Yes Vibrator Yes Receiver Yes Roud Speaker Yes Voice Recoding Yes C-Mike Yes Travel Adapter Yes Options Hands-free kit, CLA, Data Kit
2. PERFORMANCE
2.2 Technical Specification
Item Description Specification
GSM
TX: 890 + n 0.2 MHz RX: 935 + n 0.2 MHz (n = 1 ~ 124)
EGSM
1 Frequency Band TX: 890 + (n – 1024) 0.2 MHz
RX: 935 + (n – 1024) 0.2 MHz (n = 975 ~ 1024)
DCS
TX: 1710 + (n – 512) 0.2 MHz Rx: 1805 + (n – 512) 0.2 MHz (n = 512 ~ 885)
2 Phase Error
RMS < 5 degrees Peak < 20 degrees
3 Frequency Error < 0.1 ppm
GSM, EGSM
Level Power Toler. Level Power Toler.
5 33 dBm 2dB 13 17 dBm 3dB 6 31 dBm 3dB 14 15 dBm 3dB 7 29 dBm 3dB 15 13 dBm 3dB 8 27 dBm 3dB 16 11 dBm 5dB
9 25 dBm 3dB 17 9 dBm 5dB 10 23 dBm 3dB 18 7 dBm 5dB 11 21 dBm 3dB 19 5 dBm 5dB
4 Power Level 12 19 dBm 3dB
DCS
Level Power Toler. Level Power Toler.
0 30 dBm 2dB 8 14 dBm 3dB
1 28 dBm 3dB 9 12 dBm 4dB
2 26 dBm 3dB 10 10 dBm 4dB
3 24 dBm 3dB 11 8 dBm 4dB
4 22 dBm 3dB 12 6 dBm 4dB
5 20 dBm 3dB 13 4 dBm 4dB
6 18 dBm 3dB 14 2 dBm 5dB
7 16 dBm
3dB 15 0 dBm 5dB
2. PERFORMANCE
- 10 -
Item Description Specification
GSM, EGSM
Offset from Carrier (kHz). Max. dBc
100 +0.5 200 -30 250 -33 400 -60
600 ~ 1,200 -60 1,200 ~ 1,800 -60 1,800 ~ 3,000 -63 3,000 ~ 6,000 -65
5 Output RF Spectrum 6,000 -71
(due to modulation)
DCS
Offset from Carrier (kHz). Max. dBc
100 +0.5 200 -30 250 -33 400 -60
600 ~ 1,200 -60 1,200 ~ 1,800 -60 1,800 ~ 3,000 -65 3,000 ~ 6,000 -65
6,000 -73
GSM, EGSM
Offset from Carrier (kHz) Max. (dBm)
400 -19 600 -21
1,200 -21
6 Output RF Spectrum 1,800 -24
(due to switching transient)
GSM
Offset from Carrier (kHz) Max. (dBm)
400 -22
600 -24 1,200 -24 1,800 -27
7 Spurious Emissions Conduction, Emission Status
2. PERFORMANCE
- 11 -
Item Description Specification
GSM, EGSM
8 Bit Error Ratio
BER (Class II) < 2.439% @-102 dBm
DCS
BER (Class II) < 2.439% @-100 dBm
9 RX Level Report Accuracy 3 dB
10 SLR 8 3 dB
Frequency (Hz) Max.(dB) Min.(dB)
100 -12 ­200 0 ­300 0 -12
11 Sending Response 1,000 0 -6
2,000 4 -6 3,000 4 -6 3,400 4 -9 4,000 0 -
12 RLR 2 3 dB
Frequency (Hz) Max.(dB) Min.(dB)
100 -12 ­200 0 ­300 2 -7 500
*
-5
13 Receiving Response 1,000 0 -5
3,000 2 -5 3,400 2 -10 4,000 2
* Mean that Adopt a straight line in between 300 Hz
and 1,000 Hz to be Max. level in the range.
14 STMR 13 5 dB 15 Stability Margin > 6 dB
dB to ARL (dB) Level Ratio (dB)
-35 17.5
-30 22.5
16 Distortion
-20 30.7
-10 33.3 0 33.7 7 31.7
10 25.5
17 Side Tone Distortion Three stage distortion < 10% 18
System frequency (13 MHz) tolerance
2.5 ppm
2. PERFORMANCE
- 12 -
Item Description Specification
19 32.768KHz tolerance 30 ppm
Full power < 243 mA (GSM, EGSM) ; < 209 mA (DCS)
20 Power Consumption
Standby
- Normal < 4 mA (Max. power)
21 Talk Time
GSM/ Level 7 (Battery Capacity 750mA): Up to 180
Min
GSM/ Level 12 (Battery Capacity 750mA): Up to 300 Min Under conditions, Up to 200 hours:
1. Brand new and full 750mAh battery
2. Full charge, no receive/send and keep GSM in idle
22 Standby Time mode.
3. Broadcast set off.
4. Signal strength display set at 3 level above.
5. Backlight of phone set off. At least 80 dB under below conditions:
23 Ringer Volume 1. Ringer set as ringer.
2. Test distance set as 50 cm
24 Charge Voltage
Fast Charge : < 500 mA Slow Charge: < 60 mA
Antenna Bar Number Power
5 -85 dBm ~ 4 -90 dBm ~ -86 dBm
25 Antenna Display 3 -95 dBm ~ -91 dBm
2 -100 dBm ~ -96 dBm 1 -105 dBm ~ -101 dBm 0 ~ -105 dBm
Battery Bar Number Voltage
0 ~ 3.62 V
26 Battery Indicator 1 3.62 ~ 3.73 V
2 3.73 ~ 3.82 V 3 3.82 V ~
27 Low Voltage Warning
3.5 0.03 V (Call)
3.62 0.03 V (Standby)
28 Forced shut down Voltage 3.35 0.03 V
1 Li-ion Battery
29 Battery Type
Standard Voltage = 3.7 V Battery full charge voltage = 4.2 V Capacity: 750 mAh Switching-mode charger
30 Travel Charger Input: 100 ~ 240 V, 50/60 Hz
Output: 5.2 V, 600 mA
3. TECHNICAL BRIEF
- 13 -
3. TECHNICAL BRIEF
3.1 General Descreption
The RF parts consists of a transmitter part,a receiver part,a synthesizer part,a voltage supply part,a VCTCXO part. And the main RF Chipset CX74017[U411]is a single-chip dual-band transceiver for the extended global system for mobile communication[E- GSM900MHz]/Digital communication system[DCS1800MHz] voice and data transfer applications.
This device integrated a direct conversion receiver architecture, which eliminates the need of Intermediate Frequency, a transmitter based on a modulation loop architecture and fractional-N synthesizer part with built in TXVCO and Local-VCO.
3.2 Receiver
The Receiver part in CX74017 contains all active circuits completely, full receiver chain with the exception of discrete front-end RF SAW filters. The filtered and amplified signal is down converted in the RF-mixer to the baseband output. The receiver path is supported by internal channel filtering.
The RF front-end circuit is shown Figure 3-1.
Figure 3-1. RF front-end circuit.
3. TECHNICAL BRIEF
- 14 -
A. RF front end
RF front end consists of Antenna Switch(U405), dual band LNAs integrated in transceiver(U411). The Received RF signals (GSM 925MHz ~ 960MHz, DCS 1805MHz ~ 1880MHz) are fed into the antenna or mobile switch. An antenna matching circuit is between the antenna and the mobile switch.
The Antenna Switch (U405) is used to control the Rx and TX paths. And, the input signals VC1 and VC2 of a U405 are connected to 2-Input AND Gates(U401) to switch either TX or RX path on. When the RX path is turned on, the received RF signal then feeds either Rx_900_RF or RX_1800_RF path selected by GSM-RX and DCS-RX respectively. This Rx_900_RF path contains one SAW filter, followed after the Antenna Switch (U405), to filter any unwanted signal apart from the DCS RX band. And, the RX_1800_RF path is the same case.
The logic and current for Antenna Switch is given below Table 3-1.
Table 3-1. The logic and current
These two paths are then connected to the LNAGSMN (#11) and LNADCSIN (#13) of CX74017 (U411), respectively. A low-noise bipolar RF amplifier, contained within the U411, amplifies the RF signal. The RF signals from the front-end pass to the receiver mixers within the U411 device.
B. Demodulator and baseband processing
In direct conversion receiver there is only one mixer down-converting received RF signal to BB signal directly. The gain down converting mixer is 40dB at high gain mode and 22dB at low gain
mode. The Rx gain setting is done in the AGC algorithm. The nominal gain of the receiver is set as a
function of the expected signal strength at the antenna input so that a desired level is reached at the Rx I/Q. 7 blocks in the receiver chain have variable gains, LNA, Mixer, LPF1, VGA1, gmC Filter, Auxiliary gain control and VGA2. The gain settings can be adjustable via 3-wire bus control lines.
The baseband signals pass via integrated low-pass filters to the baseband A/D converters. The remainder of the channel filtering is performed by the baseband chipset. The demodulator
contains switches to maintain the sense of the baseband I/Q outputs with respect to the incoming RF signal on both GSM900 and DCS 1800.
C. DC Offset Compensation
Three correction loops ensure that DC offsets, generated in the CX74017, do not overload the baseband chain at any point.
After compensation, the correction voltages are held on capacitors for the duration of the receive slot(s). A rising edge on the RXEN signal, selected via the serial interface, placed the DC compensation circuitry in the track mode.
VC1 VC2 Current
GSM TX 0 V 2.7 V 10.0 mA max DCS TX 2.7 V 0 V 10.0 mA max GSM/DCS RX 0 V 0 V < 0.1 mA
3. TECHNICAL BRIEF
- 15 -
3.3 Transmitter Part
The Transmitter part contains CX74017 active parts and PAM, APC IC, coupler and Antenna Switch. The CX74017 active part consists of a vector modulator and offset phase-locked loop block(OPLL) including down-converter, phase detector, loop filter and dual band transmit VCO which can operate at either final RF output frequency. The RF GMSK outputs from the transmit VCO are fed directly to the RF power amplifiers.
Figure 3-2. Transmitter Block diagram
The peak output power and the profile of the transmitted burst are controlled by means of a closed feedback loop. A dual band directional coupler is used to sample the RF output from either PA. The PA outputs from the directional coupler pass to the antenna connector via Antenna Switch.
A. IF Modulator
The baseband converter(BBC) within the GSM chipset generates I and Q baseband signals for the transmit vector modulator. The modulator provides more than 40dBc of carrier and unwanted side­band rejection and produces a GMSK modulated signal. The baseband software is able to cancel out differential DC offsets in the I/Q baseband signals caused by imperfections in the D/A converters. The TX-Modulator implements a quadrature modulator. The IF-frequency input signal is split into two precise orthogonal carriers, which are multiplied by the baseband modulation signal IT/ITX and QT/QTX. It is used as reference signal for the OPLL.
TXIP TXIN
B. OPLL
The offset mixer down converts the feedback Tx RF signal using LO to generate a IF modulating signal. The IF signal goes via external passive bandpass filter to one port of the phase detector.
The other side of the phase detector input is LO signal. The phase detector generates an error current proportional to the phase difference between the modulated signal from the offset mixer and the reference signal from the LO.
The error current is filtered by a second order low-pass filter to generate an output voltage which depends on the GMSK modulation and the desired channel frequency. This voltage controls the
transmit VCO such that the VCO output signal, centered on the correct RF channel, is frequency modulated with the original GMSK data. The OPLL acts as a tracking narrowband band pass filter tuned to the desired channel frequency. This reduces the wideband noise floor of the modulation and up-conversion process and provides significant filtering of spurious products.
C. Synthesizer
The CX74017 includes a fully integrated UHF VCO with an on-chip LC tank. A single sigma-delta fractional-N synthesizer can phase lock the local osillator used in both transmit and receive path to a precision frequency reference input. Fractional-N operation offers low phase
noise and fast setting times, allowing for multiple slot applications such as GPRS. The generated frequency is given by the following equation
where : = Generated VCO frequency N = N-divider ratio integer part FN = Fractional setting R = R-divider ratio
= Reference Frequency
3. TECHNICAL BRIEF
- 16 -
=
VCOfVCO
f
3. TECHNICAL BRIEF
- 17 -
The counter and mode settings of the synthesizer are also programmed via 3-wire interface.
Figure 3-3. Synthesizer Block diagram
D. TX APC Part
The AD8315[U412] is a dual band RF power controller for RF power amplifiers operating in the 850MHz to 2GHz range.
The AD8315[U412] controls the power output of the selected RF channel. RF power is controlled by driving the RF amplifier power control pins and sensing the resultant RF output power via a directional coupler. The RF sense voltage is peak detected using an on-chip Schottky diode.
This detected voltage is compared to the DAC voltage at the VSET pin to control the output power. An internal input signal[TXRAMP] is applied to the positive input of the AD8315 amplifier during the
TXEN mode and a directional coupler near the antenna feeds a portion of the RF output signal back to the AD8315 peak detector converts this signal to a low frequency feedback signal that balances the amplifier when this signal equals the RAMP input signal level.
E. Power Amplifier
The PF08107B[U409] is Dual band amplifier for E-GSM(880 to 915MHz) and DCS1800(1710 to 1785MHz). The efficiency of module is the 50% at nominal output power for E-GSM and the 43% at 32dBm for DCS1800. This module should be operated under the GSM burst pulse. To avoid permanent degradation, CW operation should not be applied. To avoid the oscillation at no input power, before the input is cut off, the control voltage Vapc should be control to less than 0.5V.
We have to improve thermal resistance, the through holes should be layouted as many as possible on PCB under the module. And to get good stability, all the GND terminals and the metal cap should be soldered to ground plane of PCB.
13MHz
f
ref
3.4 13 MHz Clock
The 13 MHz clock (VC-TCXO-208C) consists of a TCXO (Temperature Compensated Crystal Oscillator) which oscillates at a frequency of 13 MHz.
It is used within the CX74017 RF Main Chip, BB Analog chip-set (AD6521), and Digital (AD6522).
Figure 3-4. VCTCXO Circuit.
3.5 Power Supplies and Control Signals
There are two regulators used in the phone to provide RF power. One is contained inside of ADP3408 (U101), power management IC to provide the power for the VCTXO (X302). The other is used to provide the power for remaining RF circuits.
Table 3-2.
Figure 3-5. Regulator Circuit.
3. TECHNICAL BRIEF
- 18 -
.
Regulator Voltage Powers Enable Signal
Regulator 1 (U1, 2V7_VTCXO)
2.7 V
0.5 V VCTXO
Regulator 2 (U414, RF2V8)
2.85 V
0.5 V RF circuitry VSYNTHEN
3. TECHNICAL BRIEF
- 19 -
3.6 Digital Main Processor
The AD6522 is an ADI designed processor.
Figure 3-6. Top level block diagram of the AD6522 internal architecture.
BUS Arbitration Subsystem
It is to work as a cross point for data accesses between the three main busses. EBUS is for external accesses, primarily from Flash memory for code and data. RBUS is for internal RAM access. PBUS is for access to internal peripheral modules such as UART, RTC or SIM. In addition to the three main system busses, it has SBUS, IOBUS and DMABUS.
DSP subsystem
It consists of ADI DSP, Viterbi coprocessor, Ciphering unit and a cache memory/controller system. The DSP can run at a maximum clock frequency of 78 MHz at 2.45 V. The Viterbi and ciphering accelerators enable a very efficient implementation of the channel equalization, encryption and decryption tasks.
3. TECHNICAL BRIEF
- 20 -
MCU subsystem
It consists of an ARM7TDMI central processing unit, a boot ROM, a clock generation and access control module. The maximum clock frequency for the ARM7TDMI is 39 MHz at 2.45 V. The main clock is 13MHz and it is provided by VCTCXO. The Clock & BS(Bus Select) generator
make internal clock by multiplying the main clock by 1X, 1.5X, 2X and 3X. The boot ROM contains MCU code for basic communication between the ARM and one of the serial ports in the Universal System Connector subsystem.
Peripheral subsystem
It contains four major groups of elements. The MMI group is a collection of all the functionality that are needed to implement a complete user
interface including keyboard, display, backlight, RTC, general purpose I/O etc. House Keeping group consists of three different sub-modules: The Watch Dog Timer, the Interrupt
Controller, and the general timers. GSM system group consists of the time base generation together with the synthesizer interface,
which form the radio control. Direct Memory Access is located between the three system buses (PBUS, RBUS and EBUS) and
can move any data from any address location on one system bus to any address location on another system bus.
3. TECHNICAL BRIEF
- 21 -
Figure 3-7. System interconnection of AD6522 external interfaces
3. TECHNICAL BRIEF
- 22 -
Interconnection with external devices
RTC block interface
Countered by external X-TAL The X-TAL oscillates 32.768KHz
LCD module interface
Controlled by LCD_MAIN/SUB_CS, LCD_RES, LCD_A0, /WR, /RD, DATA [00...07] ports
Table 3-3.
RF interface
The AD6522 control RF parts through TXEN, RXON1, RXON2, AGCEN, SDATA, SCLK, SEN etc.
Table 3-4.
Description
LCD_MAIN_CS LCD_SUB_CS
LCD chip enable. Each LCD has CS pin
LCD_RES This pin resets LCD module. LCD_A0
This pin determines whether the data to LCD module is display data or control data
/WR, /RD Read/Write control DATA [00...07] Parallel data line
Signal Name
Description
TXEN TX Enable/Disable RXON1 LNA, Mixer1 On/Off RXON2 Mixer 2 On/Off AGCEN AGC Enable/Disable SDATA Serial Data to PLL SCLK Clock to PLL SEN PLL Enable/Disable
3. TECHNICAL BRIEF
- 23 -
SIM interface
The AD6522 check status periodically in call mode if SIM card is inserted or not, but the AD6522 don't check in deep sleep mode.
Interface by SIM_IO, SIM_CLK, SIM_RST
Table 3-5.
Figure 3-8.
Key interface
Include 5 column and 5 row The AD6522 detect key press by interrupt
ADP3408 interrupt
There are two interrupts EOC and CHARGEDETECT EOC: End of Charge. Charging would be stopped when AD6522 receive this input. CHARGEDETECT: This interrupt is generated when charge is inserted.
Description
SIM_IO
This pin receives and sends data to SIM card. G5200 support only 3.0
volt interface SIM card. SIM_CLK Clock 3.5MHz frequency. SIM_RST Reset SIM block.
3. TECHNICAL BRIEF
- 24 -
3.7 Analog Main Processor
AD6521
Figure 3-9. AD6521 function block diagram
3. TECHNICAL BRIEF
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BB Transmit section
This section generates in-phase and quadrature BB modulated GMSK signals (BT = 0.3) in accordance with GSM 05.05 Phase 2 specifications
The transmit channel consists of a digital GMSK modulator, a matched pair of 10-bit DACs and a matched pair of reconstruction filter
BB Receive section
This section consists of two identical ADC channels that process baseband in-phase(I) and quadrature(Q) input signals.
Each channel consists of a coarse switched capacitor input filter, followed by a high-order sigma­delta modulator and a lowpass digital filter
Auxiliary section
This section contains two auxiliary DACs(AFC DAC, IDAC) for system control. This section also contains AUX ADC and Voltage Reference AUX ADC: 6 channel 10 bits AFC DAC: 13 bits IDAC: 10 bits
Voiceband section
Receive audio signal from MIC. G5200 use differential configuration. Send audio signal to Receiver. G5200 use differential configuration. It interconnect with external device like main microphone, main receiver, ear-phone and Hands free
kit through the VINNORP, VINNORN, VOUTNORP, VOUTNORN, VINAUXP, VINAUXN, VOUTAUXP, VOUTAUXN VINNORP, VINNORN: Main MIC positive/negative terminal. VOUTNORP, VOUTNORN: Main Receiver positive/negative terminal. VINAUXP, VINAUXN: Hands free kit mic positive/negative terminal. VOUTAUXP, VOUTAUXON: Hands free kit speaker positive/negative terminal.
3. TECHNICAL BRIEF
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3.8 Power Management
ADP3408
Figure 3-10. ADP3408 inner block diagram.
Power up sequence logic
The ADP3408 controls power on sequence
Power on sequence
If a battery is inserted, the battery powers the 6 LDOs. Then if PWRONKEY is detected, the LDOs output turn on. REFOUT is also enabled Reset is generated and send to the AD6522
LDO block
There are 6 LDOs in the ADP3408
Table 3-6.
Battery charging block
It can be used to charge Lithium Ion and/or Nickel Metal Hydride batteries. G5200 use Li-Ion battery only. Charger initialization, trickle charging, and Li-Ion charging control are implemented in hardware.
Charging Process
Check charger is inserted or not If ADP3408 detects that Charger is inserted, the CC-CV charging starts. Exception: When battery voltage is lower than 3.2V, the precharge (low current charge mode) starts firstly. And the battery voltage reach to 3.2V the CC-CV charging starts.
Pins used for charging
CHARGERDETECT: Interrupt to AD6522 when charger is plugged. CHARGEEN: Control signal from AD6522 to charge Li+ battery EOC: Interrupt to AD6522 when battery is fully charged GATEIN: Control signal from AD6522 to charge NiMH battery. But, not used. MVBAT: Battery voltage divider. Divide ratio is 1:2.3 and it is sensed in AD6521 AUX_ADC
TA (Travel Adaptor)
Input voltage: AC 85V ~ 260V, 50~60Hz Output voltage: DC 5.2V ( ±0.2 V ) Output current: Max 850mA ( ±50mA )
Battery
Li-ion battery (Max 4.2V, Nom 4.0V) Standard battery : Capacity - 750mAh, Li-ion
3. TECHNICAL BRIEF
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Description
VSIM 2.86 V (is provided to SIM card) VCORE 2.45 V (is provided to the AD6522 & AD6521s digital core) VRTC 2.45 V (is provided to the RTC and Backup Battery) VAN 2.45 V (is provided to the AD6521 I/O and used as microphone bias) VTCXO 2.715 V (is provided to VCTCXO) VMEM 2.80 V (is provided to Flash)
3. TECHNICAL BRIEF
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3.9 Memories
64M flash memory + 16M SRAM 16 bit parallel data bus ADD01 ~ ADD21. RF Calibration data are stored in Flash
3.10 Display and Interface
Table 3-7
G5200 has dual type LCD. There are the control output LCD_MAIN/SUB_CS which is derived from AD6522, this acts as the chip select enable for the Main/Sub LCD. AD6522 uses DATA[00:07] pins to send data for displaying graphical text onto the each LCD ( Main/Sub ).
Main LCD Sub LCD
Display Format 128 x 128 dots 96 x 64 dots Back light EL Backlight EL Backlight
3. TECHNICAL BRIEF
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3.11 Keypad Switches and Scanning
The key switches are metal domes, which make contact between two concentric pads on the keypad layer of the PCB when pressed. There are 25switches (S301-S325), connected in a matrix of 5 rows by 5 columns, as shown in Figure, except for the power switch (S310), which is connected independently.
Functions, the row and column lines of the keypad are connected to ports of AD6522. The columns are outputs, while the rows are inputs and have pull-up resistors built in. When a key is pressed, the
corresponding row and column are connected together, causing the row input to go low and generate an interrupt. The columns/rows are then scanned by AD6522 to identify the pressed key.
Figure 3-11. Keypad Switches and Scanning.
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