Page 1
PH2369
TO-92 Transistor (NPN)
1.
COLLECTOR
2. BASE
EMITTER
3.
Features
Power dissipation
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 40 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 4.5 V
Collector Current –Continuous 0.2 A
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
TO-92
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
V
V
V
IC= 100μA, IE=0 40 V
(BR)CBO
IC= 10mA, IB=0 15 V
(BR)CEO
IE= 10μA, IC=0 4.5 V
(BR)EBO
VCB= 20V, IE=0 0.4 μA
I
CBO
VEB= 4V, IC=0 0.1 μA
I
EBO
h
VCE= 1V, IC= 10mA 40 120
FE1
h
VCE= 2V, IC= 100mA 20
FE2
IC=10mA, IB=1mA 0.25 V
V
CE(sat)
IC=10mA, IB=1mA 0.7 0.85 V
V
BE(sat)
V
= 10V, IC=10mA
f
T
VCB=5V,IE=0,f=1MHz 4 pF
C
c
VEB=1V,IE=0,f=1MHz 4.5 pF
C
e
CE
f =100MHz
500 MHz
Turn-on time
Turn-off time
10 nS
t
on
t
off
=3V, IC=10mA ,
V
CC
I
= 3mA
B1
20 nS
Page 2
Typical Characteristics
PH2369
TO-92 Transistor (NPN)
Loading...