LG MJL4281A, MJL4281AG, MJL4302A, MJL4302AG Service Manual
MJL4281A (NPN)
MJL4302A (PNP)
Preferred Device
Complementary NPN−PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are PowerBaset power transistors
for high power audio.
Features
• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain − 80 to 240
hFE = 50 (min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area − 1.0 A/100 V @ 1 Second
• High f
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector−Emitter Voltage − 1.5 V V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous I
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
T
Rating Symbol Value Unit
Derate Above 25°C
Temperature Range
Characteristic Symbol Max Unit
= 25°C unless otherwise noted)
J
CEO
CBO
EBO
CEX
I
C
B
P
D
TJ, T
R
stg
q
JC
−65 to +150
350 Vdc
350 Vdc
5.0 Vdc
350 Vdc
15
30
1.5 Adc
230
1.84
0.54 °C/W
Adc
W
°C/W
°C
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15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
350 VOLTS, 230 WATTS
1
2
3
MARKING DIAGRAM
1 BASE
xxx = 281 or 302
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MJL4281A TO−264
MJL4281AG TO−264
MJL4302A TO−264 25 Units/Rail
MJL4302AG TO−264
Preferred devices are recommended choices for future use
and best overall value.
TO−264
CASE 340G
STYLE 2
MJL4xxxA
AYYWWG
3 EMITTER
2 COLLECTOR
25 Units/Rail
25 Units/Rail
(Pb−Free)
25 Units/Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1 Publication Order Number:
MJL4281A/D
MJL4281A (NPN) MJL4302A (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cut−off Current
(VCE = 200 V, IB = 0)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (non−repetitive)
(VCE = 100 Vdc, t = 1.0 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 3.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
(IC = 8.0 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
Emitter−Base Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
Base−Emitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, f
= 1.0 MHz)
test
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
= 1.0 MHz)
test
V
CE(sus)
I
CEO
I
CBO
I
EBO
I
S/b
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
FE
350 Vdc
100
mAdc
mAdc
− 50
mAdc
− 5.0
Adc
4.5
1.0
−
−
−
80
80
80
80
50
10
250
250
250
250
−
−
Vdc
− 1.0
Vdc
− 1.4
Vdc
− 1.5
T
ob
35 −
− 600
MHz
pF
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2
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