LG MJL4281A, MJL4281AG, MJL4302A, MJL4302AG Service Manual

Page 1
MJL4281A (NPN) MJL4302A (PNP)
Preferred Device
Complementary NPN−PNP Silicon Power Bipolar Transistors
The MJL4281A and MJL4302A are PowerBaset power transistors
for high power audio.
Features
350 V Collector−Emitter Sustaining Voltage
Gain Complementary:
Gain Linearity from 100 mA to 5 A High Gain − 80 to 240 hFE = 50 (min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area − 1.0 A/100 V @ 1 Second
High f
Pb−Free Packages are Available*
MAXIMUM RATINGS (T
Collector−Emitter Voltage V Collector−Base Voltage V Emitter−Base Voltage V Collector−Emitter Voltage − 1.5 V V Collector Current − Continuous
Collector Current Peak (Note 1)
Base Current − Continuous I Total Power Dissipation @ TC = 25°C
Operating and Storage Junction
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
T
Rating Symbol Value Unit
Derate Above 25°C
Temperature Range
Characteristic Symbol Max Unit
= 25°C unless otherwise noted)
J
CEO CBO EBO CEX
I
C
B
P
D
TJ, T
R
stg
q
JC
65 to +150
350 Vdc 350 Vdc
5.0 Vdc
350 Vdc
15 30
1.5 Adc
230
1.84
0.54 °C/W
Adc
W
°C/W
°C
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15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS 350 VOLTS, 230 WATTS
1
2
3
MARKING DIAGRAM
1 BASE
xxx = 281 or 302 A = Assembly Location YY = Year WW = Work Week G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MJL4281A TO−264 MJL4281AG TO−264
MJL4302A TO−264 25 Units/Rail MJL4302AG TO−264
Preferred devices are recommended choices for future use and best overall value.
TO−264
CASE 340G
STYLE 2
MJL4xxxA AYYWWG
3 EMITTER
2 COLLECTOR
25 Units/Rail 25 Units/Rail
(Pb−Free)
25 Units/Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1 Publication Order Number:
MJL4281A/D
Page 2
MJL4281A (NPN) MJL4302A (PNP)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
Collector Cut−off Current
(VCE = 200 V, IB = 0)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1.0 s (non−repetitive) (VCE = 100 Vdc, t = 1.0 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) (IC = 3.0 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) (IC = 8.0 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
Emitter−Base Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 A)
Base−Emitter ON Voltage
(IC = 8.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 5.0 Vdc, f
= 1.0 MHz)
test
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
= 1.0 MHz)
test
V
CE(sus)
I
CEO
I
CBO
I
EBO
I
S/b
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
FE
350 Vdc
100
mAdc
mAdc
50 mAdc
5.0
Adc
4.5
1.0
− 80 80 80 80 50 10
250 250 250 250
− Vdc
1.0 Vdc
1.4 Vdc
1.5
T
ob
35
600
MHz
pF
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2
Page 3
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1000
TJ = 100°C
100
hFE, DC CURRENT GAIN
10
0.01 0.1 1 10 100
TJ = 25°C
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, VCE = 5 V,
NPN MJL4281A
1000
TJ = 100°C
100
TJ = 25°C
1000
TJ = 100°C
100
hFE, DC CURRENT GAIN
10
0.01 0.1 1 10 100
TJ = 25°C
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain, VCE = 5 V,
PNP MJL4302A
1000
TJ = 100°C
100
TJ = 25°C
hFE, DC CURRENT GAIN
10
0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, VCE = 20 V,
NPN MJL4281A
1.4
1.2
1
0.8
0.6
0.4
SATURATION VOLTAGE (V)
0.2
0
0.01 0.1 1 10 100
V
be(sat)
V
ce(sat)
IC, COLLECTOR CURRENT (A)
TJ = 25°C Ic/Ib = 10
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
hFE, DC CURRENT GAIN
10
0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain, VCE = 20 V,
PNP MJL4302A
2.0
1.8
1.6
1.4
1.2
1.0 V
0.8
0.6
0.4
SATURATION VOLTAGE (V)
0.2
0.0
0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A)
be(sat)
V
ce(sat)
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
TJ = 25°C Ic/Ib = 10
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3
Page 4
MJL4281A (NPN) MJL4302A (PNP)
V
, BASE−EMITTER VOLTAGE
0
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0
I
, COLLECTOR CURRENT (A)
0
,
TYPICAL CHARACTERISTICS
1.4
1.2
1.0
0.8
(V)
0.6
0.4
0.2
BE(on)
0.0
0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A)
Figure 7. Typical Base−Emitter Voltages,
NPN MJL4281A
70
60
50
40
30
V
= 5 V
CE
V
= 10 V
CE
2.5
2.0
1.5
(V)
1.0
, BASE−EMITTER VOLTAGE
0.5
BE(on)
V
0.0
0.01 0.1 1 10 10 IC, COLLECTOR CURRENT (A)
Figure 8. Typical Base−Emitter Voltages,
PNP MJL4302A
70
60
50
40
30
V
= 5 V
CE
V
= 10 V
CE
20
10
TJ = 25°C f
= 1 MHz
test
0
0.1 1 10 IC, COLLECTOR CURRENT (A)
Figure 9. Typical Current Gain Bandwidth Product,
NPN MJL4281A
100
10 mS
10
1
0.1
C
TJ = 25°C
0.01 1 10 100 1000
Vce, COLLECTOR−EMITTER VOLTAGE (V)
1 Sec
100 mS
Figure 11. Active Region Safe Operating Area,
NPN MJL4281A
20
10
TJ = 25°C f
= 1 MHz
test
0
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0.1 1 1
Figure 10. Typical Current Gain Bandwidth Product
PNP MJL4302A
100
10 mS
10
1 Sec
1
0.1
, COLLECTOR CURRENT (A)
C
I
TJ = 25°C
0.01 1 10 100 100
Vce, COLLECTOR−EMITTER VOLTAGE (V)
100 mS
Figure 12. Active Region Safe Operating Area,
PNP MJL4302A
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MJL4281A (NPN) MJL4302A (PNP)
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
Q
−B−
0.25 (0.010) MTB
U
N
A
L
P
K
2 PL
123
W
R
F
G
D
3 PL
0.25 (0.010) MTB
S
M
J H
−T−
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIMAMIN MAX MIN MAX
28.0 29.0 1.102 1.142
B 19.3 20.3 0.760 0.800 C 4.7 5.3 0.185 0.209 D 0.93 1.48 0.037 0.058 E 1.9 2.1 0.075 0.083 F 2.2 2.4 0.087 0.102 G 5.45 BSC 0.215 BSC H 2.6 3.0 0.102 0.118 J 0.43 0.78 0.017 0.031 K 17.6 18.8 0.693 0.740 L 11.2 REF 0.411 REF N 4.35 REF 0.172 REF P 2.2 2.6 0.087 0.102 Q 3.1 3.5 0.122 0.137 R 2.25 REF 0.089 REF U 6.3 REF 0.248 REF
W 2.8 3.2 0.110 0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
INCHES
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MJL4281A/D
5
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