LG KB770 Service Manual

Service Manual Model : KB770
Internal Use Only
Service Manual
KB770
Date: November, 2008 / Issue 1.0
Table Of Contents
1. INTRODUCTION ...............................................5
1.1 Purpose ......................................................................5
1.2 Regulatory Information .................................................5
2. PERFORMANCE ...............................................7
2.1 System Overview .........................................................7
2.2 Usable environment .....................................................8
2.3 Radio Performance ......................................................8
2.4 Current Consumption .................................................14
2.5 RSSI BAR ..................................................................14
2.6 Battery BAR ..............................................................14
2.7 Sound Pressure Level ................................................15
2.8 Charging ...................................................................16
3. TECHNICAL BRIEF .........................................17
3.1 General Description ...................................................17
3.2 GSM Mode ................................................................19
3.3 UMTS Mode ..............................................................23
3.4 LO generation and distribution circuits ........................26
3.5 Off-chip RF Components ............................................26
3.6 Digital Baseband (MSM6280) .....................................42
3.7 Subsystem(MSM6280) ..............................................44
3.8 Power Block ..............................................................51
3.9 External memory interface .........................................56
3.10 H/W Sub System .....................................................58
3.11 MAIN Features ........................................................74
4.9 Power ON Troubleshooting .......................................103
4.10 Charger Troubleshooting ........................................105
4.11 USB Troubleshooting ..............................................107
4.12 USIM Detect Troubleshooting ..................................108
4.13 Camera Troubleshooting ........................................110
4.14 Keypad Backlight Troubleshooting ...........................112
4.15 LCD Troubleshooting ..............................................114
4.16 Receiver Path ........................................................115
4.17 Headset path.........................................................117
4.18 Speaker phone path ..............................................119
4.19 Main microphone ..................................................121
4.20 Headset microphone ..............................................123
4.21 Vibrator .................................................................125
4.22 Checking DVB-T/H Block( The DVB-T/H function is for
KB770 ) ................................................................126
5. DOWNLOAD & S/W UPGRADE ..................... 131
6. BLOCK DIAGRAM ........................................ 146
7. CIRCUIT DIAGRAM ...................................... 157
8. BGA PIN MAP ..............................................167
9. PCB LAYOUT ...............................................171
10. CALIBRATION ............................................177
10.1 USAGE OF HOT-KIMCHI .........................................177
4. TROUBLE SHOOTING ..................................... 79
4.1 RF Component Description .........................................79
4.2 WCDMA RF Signal Path .............................................80
4.3 GSM RF Signal Path ..................................................81
4.4 Checking VCTCXO Block ............................................82
4.5 Checking Front-End Module Block ..............................85
4.6 Checking WCDMA Block ............................................87
4.7 Checking GSM Block .................................................94
4.8 Checking Bluetooth Block ........................................100
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
11. EXPLODED VIEW & REPLACEMENT
PART LIST ................................................. 181
11.1 EXPLODED VIEW ...................................................181
11.2 Replacement Parts ................................................183
11.3 Accessory .............................................................207
LGE Internal Use Only
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
1. INTRODUCTION
1. INTRODUCTION
1.1 Purpose
This manual provides the information necessary to repair, calibration, description and download the
features of this model.
1.2 Regulatory Information
A. Security
Toll fraud, the unauthorized use of telecommunications system by an unauthorized part (for example,
persons other than your company’s employees, agents, subcontractors, or person working on your
company’s behalf) can result in substantial additional charges for your telecommunications services.
System users are responsible for the security of own system. There are may be risks of toll fraud
associated with your telecommunications system. System users are responsible for programming and
configuring the equipment to prevent unauthorized use. The manufacturer does not warrant that this
product is immune from the above case but will prevent unauthorized use of common-carrier
telecommunication service of facilities accessed through or connected to it. The manufacturer will not
be responsible for any charges that result from such unauthorized use.
B. Incidence of Harm
If a telephone company determines that the equipment provided to customer is faulty and possibly
causing harm or interruption in service to the telephone network, it should disconnect telephone
service until repair can be done. A telephone company may temporarily disconnect service as long as
repair is not done.
C. Changes in Service
A local telephone company may make changes in its communications facilities or procedure. If these
changes could reasonably be expected to affect the use of the phones or compatibility with the net
work, the telephone company is required to give advanced written notice to the user, allowing the user
to take appropriate steps to maintain telephone service.
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
LGE Internal Use Only
1. INTRODUCTION
D. Maintenance Limitations
Maintenance limitations on the phones must be performed only by the manufacturer or its authorized
agent. The user may not make any changes and/or repairs expect as specifically noted in this manual.
Therefore, note that unauthorized alternations or repair may affect the regulatory status of the system
and may void any remaining warranty.
E. Notice of Radiated Emissions
This model complies with rules regarding radiation and radio frequency emission as defined by local
regulatory agencies. In accordance with these agencies, you may be required to provide information
such as the following to the end user.
F. Pictures
The pictures in this manual are for illustrative purposes only; your actual hardware may look slightly
different.
G. Interference and Attenuation
A phone may interfere with sensitive laboratory equipment, medical equipment, etc. Interference from
unsuppressed engines or electric motors may cause problems.
H. Electrostatic Sensitive Devices
ATTENTION
Boards, which contain Electrostatic Sensitive Device (ESD), are indicated by the sign.
Following information is ESD handling:
• Service personnel should ground themselves by using a wrist strap when exchange system boards.
• When repairs are made to a system board, they should spread the floor with anti-static mat which is
also grounded.
• Use a suitable, grounded soldering iron.
• Keep sensitive parts in these protective packages until these are used.
• When returning system boards or parts like EEPROM to the factory, use the protective package as
described.
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
2. PERFORMANCE
2.1 System Overview
Item Specification
Shape GSM900/1800/1900 and WCDMA bar type Handset
Size 108 X 54.5 X 18.3 mm
Weight 93 g (with 1000mAh Battery)
Power 4.0V normal, 1000 mAh(Li-ion) inner-pack
Talk Time Over 180 min (WCDMA, Tx=12 dBm, Voice)
(with 1000mAh) Over 180 min (GSM, Tx=Max, Voice)
Standby Time Over 250 Hrs (WCDMA, DRX=1.28)
2. PERFORMANCE
(with 1000mAh) Over 320 Hrs (GSM, Paging period=5)
Antenna Internal type
LCD 400 x 240 pixel (TFT)
LCD Backlight White LED Back Light
Camera 3.0 Mega (CMOS) / VGA (CMOS).
Vibrator Yes
LED Indicator No
MIC Yes
Receiver Yes
Earphone Jack Yes (18 pin)
Connectivity Bluetooth, USB
Volume Key Push Type(+, -)
External Memory Trans-Flash
I/O Connect 18 Pin
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
LGE Internal Use Only
2. PERFORMANCE
2.2 Usable environment
1) Environment
Item Specification
Voltage 4.0 V(Typ), 3.28 V(Min), [Shut Down : 3.25 V]
Operation Temp -20 ~ +60 °C
Storage Temp -20 ~ +70 °C
Humidity 85 % (Max)
2) Environment (Accessory)
Reference Spec. Min Typ. Max Unit
TA Power Available power 100 220 240 Vac
* CLA : 12 ~ 24 V(DC)
2.3 Radio Performance
1) Transmitter - GSM Mode
No Item GSM DCS & PCS
9k ~ 1GHz -39dBm
1G~[A]MHz -33dBm
[A]M~[B]MHz -39dBm
[B]M~12.75GHz -33dBm
1
Conducted
Spurious
Emission
100k~1GHz -39dBm
MS allocated
Channel
1G~12.75GHz -33dBm
100k~880MHz -60dBm 100k~880MHz -60dBm
880M~915MHz -62dBm 880M~915MHz -62dBm
915M~1GHz -60dBm 915M~1GHz -60dBm
Idle Mode
1G~[A]MHz -50dBm 1G~[A]MHz -50dBm
[A]M~[B]MHz -56dBm [A]M~[B]MHz -56dBm
[B]M~12.5GHz -50dBm [B]M~12.5GHz -50dBm
* In case of DCS : [A] -> 1710, [B] -> 1785 * In case of PCS : [A] -> 1850, [B] -> 1910
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
2. PERFORMANCE
No Item GSM DCS & PCS
MS
allocated
Channel
Radiated
2
Spurious
Emission
3 Frequency Error ±0.1ppm ±0.1ppm
4 Phase Error
Frequency Error
Under Multipath and
5
Interference
Condition
Idle
Mode
30M ~ 1GHz -36dBm
1G ~ 4GHz -30dBm
30M ~ 880MHz -57dBm 30M~880MHz -57dBm
880M ~ 915MHz -59dBm 880M~915MHz -59dBm
915M~1GHz -57dBm 915M~1GHz -57dBm
1G~[A]MHz -47dBm 1G~[A]MHz -47dBm
[A]M~[B]MHz -53dBm [A]M~[B]MHz -53dBm
[B]M~4GHz -47dBm [B]M~4GHz -47dBm
±5(RMS) ±5(RMS)
±20(PEAK) ±20(PEAK)
3dB below reference sensitivity 3dB below reference sensitivity
RA250 : ±200Hz RA250: ±250Hz
HT100 : ±100Hz HT100: ±250Hz
TU50 : ±100Hz TU50: ±150Hz
TU3 : ±150Hz TU1.5: ±200Hz
30M~1GHz -36dBm
1G~[A]MHz -30dBm
[A]M~[B]MHz -36dBm
[B]M~4GHz -30dBm
0 ~ 100kHz +0.5dB 0 ~ 100kHz +0.5dB
200kHz -30dB 200kHz -30dB
Due to
modulati
Output
6
RF
Spectrum
*In case of DCS : [A] -> 1710, [B] -> 1785 * In case of PCS : [A] -> 1850, [B] -> 1910
on
Due to
Switching
transient
250kHz -33dB 250kHz -33dB
400kHz -60dB 400kHz -60dB
600 ~ 1800kHz -66dB 600 ~ 1800kHz -60dB
1800 ~ 3000kHz -69dB 1800 ~ 6000kHz -65dB
3000 ~ 6000kHz -71dB ≥6000kHz -73dB
6000kHz -77dB
400kHz -19dB 400kHz -22dB
600kHz -21dB 600kHz -24dB
1200kHz -21dB 1200kHz -24dB
1800kHz -24dB 1800kHz -27dB
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
LGE Internal Use Only
2. PERFORMANCE
No Item GSM DCS & PCS
Frequency offset 800kHz
7
Intermodulation
attenuation
8 Transmitter Output Power
Intermodulation product should
be Less than 55dB below the
level of Wanted signal
Power
Power
control
Level (dBm) (dB) Level (dBm) (dB)
5 33 ±3 0 30 ±3
6 31 ±3 1 28 ±3
7 29 ±3 2 26 ±3
8 27 ±3 3 24 ±3
9 25 ±3 4 22 ±3
10 23 ±3 5 20 ±3
11 21 ±3 6 18 ±3
12 19 ±3 7 16 ±3
13 17 ±3 8 14 ±3
14 15 ±3 9 12 ±4
TolerancePower
control
Power
Toleranc
e
15 13 ±3 10 10 ±4
16 11 ±5 11 8 ±4
17 9 ±5 12 6 ±4
18 7 ±5 13 4 ±4
19 5 ±5 14 2 ±5
15 0 ±5
9 Burst timing Mask IN Mask IN
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Only for training and service purposes
2. PERFORMANCE
2) Transmitter – WCDMA Mode
No Item Specification
1 Maximum Output Power
2 Frequency Error ±0.1ppm
3 Open Loop Power control in uplink ±9dB@normal, ±12dB@extreme
4 Inner Loop Power control in uplink
5 Minimum Output Power -50dBm(3.84MHz)
Out-of-synchronization handling of output
6
power
Class3: +24dBm(+1/-3dB)
Class 4 : +21dBm(±2dB)
Adjust output(TPC command)
cmd 1dB 2dB 3dB
+0.5/1.5 +1/3
+1
+1.5/4.5
-0.5/+0.5 -0.5/+0.5 -
0
0.5/+0.5
-0.5/-1.5 -1/-3 -1.5/-
-1
4.5
Group (10 equel command group)
+1 +8/+12 +16/+24
Qin/Qout : PCCH quality levels
Toff@DPCCH/Ior : -22 -> -28dB
Ton@DPCCH/Ior : -24 -> -18dB
7 Transmit OFF Power -56dBm(3.84MHz)
8 Transmit ON/OFF Time Mask ±25us PRACH,CPCH,uplinlk compressed mode
±25us
9 Change of TFC
10 Power setting in uplink compressed ±3dB(after 14slots transmission gap)
11 Occupied Bandwidth(OBW) 5MHz(99%)
12 Spectrum emission Mask
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
Power varies according to the data rate DTX :
DPCH off
(minimize interference between UE)
-35-15*(Δf-2.5)dBc@Δf=2.5~3.5MHz,30k
-35-1*(Δf-3.5)dBc@Δf=3.5~7.5MHz,1M
-39-10*(Δf-7.5)dBc@Δf=7.5~8.5MHz,1M
-49dBc@Δf=8.5~12.5MHz,1M
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LGE Internal Use Only
2. PERFORMANCE
13 Adjacent Channel Leakage Ratio(ACLR)
Spurious Emissions
14
(*:additional requirement)
15 Transmit Intermodulation
16 Error Vector Magnitude (EVM)
33dB@5MHz, ACP>-50dBm
43dB@10MHz, ACP>-50dBm
-36dBm@f=9~150KHz, 1K BW
-36dBm@f=50KHz~30MHz, 10K BW
-36dBm@f=30MHz~1000MHz, 100K BW
-30dBm@f=1~12.5GHz,1M BW
(*)-41dBm@f=1893.5~1919.6MHz, 300K
(*)-67dBm@f=925~935MHz, 100K BW
(*)-79dBm@f=935~960MHz, 100K BW
(*)-71dBm@f=1805~1880MHz, 100K BW
-31dBc@5MHz,Interferer -40dBc
-41dBc@10MHz, Interferer -40dBc
17.5%(>-20dBm)
(@12.2K, 1DPDCH+1DPCCH)
17 Transmit OFF Power
-15dB@SF=4.768Kbps,
Multi-code transmission
3) Receiver - GSM Mode
No Item GSM DCS & PCS
1 Sensitivity (TCH/FS Class II) -105dBm -105dBm
Co-Channel Rejection (TCH/FS
2
Class II, RBER, TU high/FH)
Adjacent
3
Channel
Rejection
4 Intermodulation Rejection
200kHz C/Ia1=-12dB C/Ia1=-12dB
400kHz C/Ia2=-44dB C/Ia2=-44dB
C/Ic=7dB Storage -30 ~ +85
Wanted Signal :-98dBm
1st interferer:-44dBm
2nd interferer:-45dBm
Wanted Signal :-96dBm
1st interferer:-44dBm
2nd interferer:-44dBm
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
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Only for training and service purposes
2. PERFORMANCE
Blocking Response
5
(TCH/FS Class II, RBER)
Wanted Signal :-101dBm
Unwanted : Depend on
Frequency
Wanted Signal :-101dBm
Unwanted : Depend on
Frequency
4) Receiver - WCDMA Mode
No Item Specification
1 Reference Sensitivity Level -106.7 dBm(3.84 MHz)
-25dBm(3.84MHz)
2 Maximum Input Level
3 Adjacent Channel Selectivity (ACS)
4 In-band Blocking
-44dBm/3.84MHz(DPCH_Ec)
UE@+20dBm output power(Class3)
33dB
UE@+20dBm output power(Class3)
-56dBm/3.84MHz@10MHz
UE@+20dBm output power(Class3)
-44dBm/3.84MHz@15MHz
UE@+20dBm output power(Class3)
5 Out-band Blocking
6 Spurious Response
7 Intermodulation Characteristic
8 Spurious Emissions
-44dBm/3.84MHz@f=2050~2095 and
2185~2230MHz
UE@+20dBm output power(Class3)
-30dBm/3.84MHz@f=2025~2050 and
2230~2255MHz
UE@+20dBm output power(Class3)
-15dBm/3.84MHz@f=1~2025 and
2255~12500MHz
UE@+20dBm output power(Class3)
-44dBm CW
UE@+20dBm output power(Class3)
-46dBm CW@10MHz
-46dBm/3.84MHz@20MHz
UE@+20dBm output power(Class3)
-57dBm@f=9KHz~1GHz, 100K BW
-47dBm@f=1~12.5GHz, 1M BW
-60dBm@f=1920MHz~1980MHz, 3.84M BW
-60dBm@f=2110MHz~2170MHz, 3.84M BW
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
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LGE Internal Use Only
2. PERFORMANCE
2.4 Current Consumption
Stand by(BT Off condition) Voice Call VT
WCDMA
Under 3.5 mA
(DRX=1.28)
Under 320 mA
(Tx=12dBm)
Under 430mA
(Tx=0dBm)
GSM
Under 3.5 mA
(Paging=5period)
(Stand by and Voice Call Test Condition : LCD backlight Off)
(VT Test Condition : Speaker off, LCD backlight On)
Under 300 mA
(Tx=Max)
2.5 RSSI BAR
Level Change WCDMA GSM
BAR 7 >= -91 dBm >= -92 dBm
BAR 7 6,5 -93 ± 2 dBm -94 ± 2 dBm
BAR 6,5 4 -105 ± 2 dBm -98 ± 2 dBm
BAR 4 3,2 -110 ± 2 dBm -102 ± 2 dBm
BAR 3,2 1 -112 ± 2 dBm -105 ± 2 dBm
BAR 1 0 -114 ± 2 dBm -107 ± 2 dBm
2.6 Battery BAR
Indication Standby
Bar 3 Over 3.77 ± 0.05V
Bar 3 2 3.77 ± 0.05V
Bar 2 1 3.67 ± 0.05V
Bar 1 Empty 3.50 ± 0.05V
Low Voltage,
Warning message + Blinking
Power off 3.25 ± 0.05V
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
- 14 -
[Interval: 3min(Stand by)/1min(talk)]
3.50 ± 0.05V
Only for training and service purposes
2. PERFORMANCE
2.7 Sound Pressure Level
No Test Item Specification
1 Sending Loudness Rating (SLR)
Nor
2 Receiving Loudness Rating (RLR)
Max
3 Side Tone Masking Rating (STMR) Min 17 dB
MS
4 Echo Loss (EL) Min 40 dB
5 Idle Noise-Sending (INS) Max -64 dBm0p
Nor Under -58 dBPA
6 Idle Noise-Receiving (INR)
Max Under -58 dBPA
7 Sending Loudness Rating (SLR)
Nor
8 Receiving Loudness Rating (RLR)
Max
9 Side Tone Masking Rating (STMR) Min 25 dB
Headset
10 Echo Loss (EL) Min 40 dB
11 Idle Noise-Sending (INS) Max -55 dBm0p
Nor Under -45 dBPA
12 Idle Noise-Receiving (INR)
Max Under -40 dBPA
± 3 dB
8
2
-8
7
-6
-13
±3 dB
±3 dB
±3 dB
±3 dB
±3 dB
TDMA Noise
-. GSM : Power Level : 5
DCS/PCS : Power Level : 0
(Cell Power : -90 ~ -105 dBm)
13
-. Acoustic (Max Vol.)
MS/Headset SLR : 8 3dB
MS/Headset RLR : -15 3dB / -12dB
(SLR/RLR : Mid-value setting)
MS and
Max Under -62 dBm
Headset
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
- 15 -
LGE Internal Use Only
2. PERFORMANCE
2.8 Charging
• Charging Method : CC & CV (Constant Current and Constant Voltage)
• Maximum Charging Voltage : 4.2 V
• Maximum Charging Current : 600 mA
• Normal Battery Capacity : 1000 mAh
• Charging Time : Max 3 hours (except for trickle charging time)
• Full charging indication current (charging icon stop current) : 80mA
• Cut-off voltage : 3.2 V
LGE Internal Use Only Copyright © 2008 LG Electronics. Inc. All right reserved.
- 16 -
Only for training and service purposes
3. TECHNICAL BRIEF
3. TECHNICAL BRIEF
3.1 General Description
The KB770 supports UMTS-2100, GSM-900, DCS-1800, and PCS-1900 based GSM/GPRS/EDGE/UMTS. All receivers and the UMTS transmitter use the radioOne[1] architecture to eliminate intermediate frequencies, directly converting signals between RF and baseband. The quad-band GSM transmitters use a baseband-to-IF up-conversion followed by an offset phase-locked loop that translates the GMSK-modulated or 8-PSK-modulated signal to RF.
Zero-IF
UMTS Cell + PCS with Rx
diversity
Quad-band EDGE/GPRS
IMT primary only
Primary
Antenna
Simultaneous-GPS
EDGE/GPRS Tx/Rx and
WCDMA Tx are on the RTR6275 IC
One high-band WCDMA Rx is
on the RTR6275 IC
Two PLLs on the RTR6275 IC:
One for EDGE/GPRS Tx/Rx
and WCDMA Tx
One for WCDMA Rx
GPS pre-LNA within RFR
UHF VCOs within RFR
Two PLLs within RFR:
One for primary and
diversity receive path
One for GPS
LO buffers, etc. within RFR
No RTR/RFR LO interfaces
No External VCOs
WS
H-B PF
L-B PF
U800/ 8 50
U1900
U2100
G850 Rx
G900 Rx
G1800 Rx
G1900 Rx
Power
Detect or
LPF
BPF
BPF
Quadrature Upconver t er
BPF
Quadrature
LO Generat ion & Distribution
Quadrature
Downconver ter
Upconver t er
Quadrature
Downconverter
BPF
1
U2100
LNA
LNA
Pre-
LNA
RFR6500
Rx BP F
Quadrature
Downconverter
LO Gener ation & Distribution
retl
pool
i f
CDMA VCOs
PCS BPF
Cell BPF
GPS BPF
Quad
D’convert
LPF
DAC_REF
LPF
F ref RFR6275_TCXO
F ref
PLL #1
FP
LPF & DC Correction
L
VCO
RTR6275
LPF & DC Correction
sO/IlatigiD
sl o
r t noc
ctls
&
F ref
PLL #2
VCO
RFR6 500_TCXO
LO Gen & Dist
Quad
D’convert
Diversity
Rx VCO
F ref
ctls
LPF
Primary path
LPF
Jammer detec t
LPF
Secondary path
LPF
PLL1
F ref
sO/Ilat
slortn
o
i
C&
giD
GPS VCO
F ref
PLL0
2
Quad
D’convert
Diversity
Rx VCO
LO Gen & Dist
M S M
VDDM
26
/08 7
002
FPL
VDDM
SBI(s)
and other
status
control
MSM_ TC X O
retlif
pool
da p
dap
niahcy
s relpuoc
s iad
UMTS Diver sity
&
GPS Antenna
U850
Tx BPF
U2100 Tx BPF
T
R
T
R
T
R
SAW
U1900 Tx BPF
WS
G850 &
G900
Rx BPFs
G1800 &
G1900 Rx BPFs
GPS
GPS
U800/ 850
U1900
Rx BPF
Cell
Rx BPF
PCS
Rx BPF
WS
Figure 3.1 Block diagram of RF part
Copyright © 2008 LG Electronics. Inc. All right reserved. Only for training and service purposes
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LGE Internal Use Only
3. TECHNICAL BRIEF
A generic, high-level functional block diagram of KB770 is shown in Figure 3.1. One antenna collects base station forward link signals and radiates handset reverse link signals. The antenna connects with
receive and transmit paths through a FEM(Front End Module)
The UMTS receive paths each include an LNA, an RF band-pass filter, and a downconverter that
translate the signal directly from RF-to-baseband using radioOne ZIF techniques. The RFIC’s Rx
analog baseband outputs, for the receive chains, connect to the MSM IC. The UMTS and GSM Rx
baseband outputs share the same inputs to the MSM IC.
For the transmit chains, the RTR6275 IC directly translates the Tx baseband signals (from the
MSM device) to an RF signal using an internal LO generated by integrated on-chip PLL and VCO.
The RTR6275 IC outputs deliver fairly high-level RF signals that are first filtered by Tx SAWs and
then amplified by their respective UMTS PAs. The high- and low-band UMTS RF transmit signals
emerge from the RTR6275 transceiver.
In the GSM receive path, the received RF signals are applied through their band-pass filters and
down-converted directly to baseband in the RTR6275 transceiver IC. These baseband outputs are
shared with the UMTS receiver and routed to the MSM IC for further signal processing.
The GSM/EDGE transmit path employs one stage of up-conversion and, in order to improve
efficiency, is divided into phase and amplitude components to produce an open-loop Polar topology:
1. The on-chip quadrature up-converter translates the GMSK-modulated signal or 8-PSK
modulated signal, to a constant envelope phase signal at RF;
2. The amplitude-modulated (AM) component is applied to the ramping control pin of Polar power
amplifier from a DAC within the MSM
KB770 power supply voltages are managed and regulated by the PM6650 Power Management IC.
This versatile device integrates all wireless handset power management, general housekeeping,
and user interface support functions into a single mixed signal IC. It monitors and controls the
external power source and coordinates battery recharging while maintaining the handset supply
voltages using low dropout, programmable regulators.
The device’s general housekeeping functions include an ADC and analog multiplexer circuit for
monitoring on-chip voltage sources, charging status, and current flow, as well as user-defined off-
chip variables such as temperature, RF output power, and battery ID. Various oscillator, clock, and
counter circuits support IC and higher-level handset functions. Key parameters such as under-
voltage lockout and crystal oscillator signal presence are monitored to protect against detrimental
conditions.
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Only for training and service purposes
3. TECHNICAL BRIEF
3.2 GSM Mode
3.2.1 GSM Receiver
The Dual-mode KB770’s receiver functions are split between the three RFICs as follows:
EGSM-900(GSM900), DCS-1800, and PCS-1900 modes use the RTR6275 IC only. Each mode has
independent front-end circuits and down-converters, but they share common baseband circuits (with only
2
one mode active at a time). All receiver control functions are beginning with SBI
RF Front end consists of antenna, antenna switch module (LMSP4LMA-573TEMP) which includes three
RX saw filters (EGSM-900, DCS-1800 and PCS-1900). The antenna switch module allows multiple
operating bands and modes to share the same antenna. In KB770, a common antenna connects to one of
six paths: 1) UMTS-2100 Rx/Tx, 2) EGSM-900 Rx, 3) EGSM-900 Tx, 4) DCS-1800 Rx, and 5) DCS-1800,
PCS-1900 Tx(High Band Tx’s share the same path), 6) PCS-1900 Rx. UMTS operation requires
simultaneous reception and transmission, so the UMTS Rx/Tx connection is routed to a duplexer that
separates receive and transmit signals. GSM900, DCS1800, and PCS1900 operation is time division
duplexed, so only the receiver or transmitter is active at any time and a frequency duplexer is not required.
-controlled parameters.
Table 3.2.1 Antenna Switch Module Control logic
2 The RFIC operating modes and circuit parameters are MSM-controlled through the proprietary 3-line Serial Bus Interface (SBI). The Application Programming Interface (API) is used to implement SBI commands. The API is documented in AMSS Software – please see applicable AMSS Software documentation for details.
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3. TECHNICAL BRIEF
The GSM900, DCS1800, and PCS1900 receiver inputs of RTR6275 are connected directly to the transceiver front-end circuits(filters and antenna switch module). GSM900, DCS1800, and PCS1900 receiver inputs use differential configurations to improve common-mode rejection and second-order non-linearity performance. The balance between the complementary signals is critical and must be maintained from the RF filter outputs all the way into the IC pins.
Since GSM900, DCS1800, and PCS1900 signals are time-division duplex (the handset can only receive or transmit at one time), switches are used to separate Rx and Tx signals in place of frequency duplexers – this is accomplished in the switch module.
The GSM900, DCS1800, and PCS1900 receive signals are routed to the RTR6275 through band selection filters and matching networks that transform single-ended 50W sources to differential impedances optimized for gain and noise figure. The RTR input uses a differential configuration to improve second-order inter-modulation and common mode rejection performance. The RTR6275 input stages include MSM-controlled gain adjustments that maximize receiver dynamic range.
The amplifier outputs drive the RF ports of the quadrature RF-to-baseband downconverters. The downconverted baseband outputs are multiplexed and routed to lowpass filters (one I and one Q) having passband and stopband characteristics suitable for GMSK or 8-PSK processing. These filter circuits include DC offset corrections. The filter outputs are buffered and passed on to the MSM6280 IC for further processing.
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3. TECHNICAL BRIEF
Figure 3.2.1 RTR6275 RX feature
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LGE Internal Use Only
3. TECHNICAL BRIEF
3.2.2 GSM Transmitter
The RTR6275 transmitter outputs (HB_RF_OUT2 and LB_RF_OUT1) include on-chip output matching
inductors. 50ohm output impedance is achieved by adding a series capacitor at the output pins. The
capacitor value may be optimized for specific applications and PCB characteristics based on pass-band
symmetry about the band center frequency. The suggested circuit is shown in Fig.3.2.2
Figure 3.2.2 GSM Transmitter matching
The RTR6275 IC is able to support EGSM900 and DCS1800/PCS1900 mode transmitting. This design guideline shows a tri-band GSM application.
Both high-band and low band outputs are followed by resistive pads to ensure that the load Presented to the outputs remains close to 50ohm. The low-band GSM Tx path also includes a Tx-band SAW filter to remove noise-spurious components and noise that would be amplified by the PA and appear in the GSM Rx band.
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3. TECHNICAL BRIEF
3.3 UMTS Mode
3.3.1 Receiver
The UMTS duplexer receiver output is routed to LNA circuits within the RFR6275 device. UMTS LNA circuits(one for low-band UMTS and one for high-ban UMTS path) separated from all other receive functions contained within the RFR6275 receiver IC to improve mixer LO to RF isolation a critical parameter in the ZIF architecture. Isolation is further improved using high-reverse isolation circuits into the LNA designes. The LNA gains are stepped via API control. The IC operating mode and LNA bias currents re­automatically adjusted via software to minimize DC power consumption.
The UMTS Rx input is provided with an on-chip LNA that amplifies the signal before a second stage filter
that provides differential downconverter. This second stage input is configured differentially to optimize
second-order intermodulation and common mode rejection performance. The gain of the UMTS frontend
amplifier and the UMTS second stage differential amplifier are adjustable, under MSM control, to extend
the dynamic range of the receivers. The second stage UMTS Rx amplifiers drive the RF ports of the
quadrature RF-to-baseband downconverters. The downconverted UMTS Rx baseband outputs are routed
to lowpass filters having passband and stopband characteristics suitable for UMTS Rx processing. These
filter circuits allow DC offset corrections, and their differential outputs are buffered to interface shared with
GSM Rx to the MSM IC. The UMTS baseband outputs are turned off when the RTR6275 is
downconverting GSM signals and on when the UMTS is operating.
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3. TECHNICAL BRIEF
3.3.2 Transmitter
The UMTS Tx path begins with differential baseband signals (I and Q) from the MSM device.
These analog input signals are amplified, filtered, and applied to the quadrature up-converter mixers. The
up-converter output is amplified by multiple variable gain stages that provide transmit AGC control. The
AGC output is filtered and applied to the driver amplifier; this output stage includes an integrated matching
inductor that simplifies the external matching network to a single series capacitor to achieve the desired 50-Ω interface.
The RTR6275 UMTS output is routed to its power amplifier through a bandpass filter, and delivers fairly
high-level signals that are filtered and applied to the PA. Transmit power is delivered from the duplexer to
the antenna through the switch module.
The transceiver LO synthesizer is contained within the RTR6275 IC with the exception of the off-chip loop
filter components and the VC-TCXO. This provides a simplified design for multimode applications. The PLL
circuits include a reference divider, phase detector, charge pump, feedback divider, and digital logic
generator.
UMTS Tx. Using only PLL1, the LO generation and distribution circuits create the necessary LO signals for
nine different frequency converters. The UMTS transmitter also employs the ZIF architecture to translate
the signal directly from baseband to RF. This requires FLO to equal FRF, and the RTR6275 IC design
achieves this without allowing FVCO to equal FRF.
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3. TECHNICAL BRIEF
Figure 3.3.2 RTR6275 IC functional block diagram
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LGE Internal Use Only
3. TECHNICAL BRIEF
3.4 LO generation and distribution circuits
The integrated LO generation and distribution circuits are driven by internal VCOs to support various modes to yield highly flexible quadrature LO outputs that drive all GSM/EDGE and UMTS band upconverters and downconverters; with the help of these LO generation and distribution circuits, true zero-IF architecture is employed in all GSM and UMTS band receivers and transmitters to translate the signal directly from RF to baseband and from baseband to RF.
Two fully functional fractional-N synthesizers, including VCOs and loop filters, are integrated within the RTR6275 IC. The first synthesizer (PLL1) creates the transceiver LOs that support the UMTS 2100 transmitter, and all four GSM band receivers and transmitters including: GSM900, DCS1800, and PCS1900. The second synthesizer (PLL2) provides the LO for the UMTS 2100 receiver. An external TCXO input signal is required to provide the synthesizer frequency reference to which the PLL is phase and frequency locked. The RTR6275 IC integrates most of PLL loop filter components on-chip except two off-chip loop filter series capacitors, and significantly reduces off-chip component requirement. With the integrated fractional-N PLL synthesizers, the RTR6275 has the advantages of more flexible loop bandwidth control, fast lock time, and low-integrated phase error
3.5 Off-chip RF Components
3.5.1 Front-End Module(FL100 : LMSP4LMA-573TEMP)
This equipment uses a single antenna to support all handset operating modes, with an antenna switch module select the operating frequency and band. UMTS operation requires simultaneous reception and transmission, so the UMTS Rx/Tx connection is routed to a duplexer that separates receive and transmit signals. The active connection is MSM-selected by three control lines (GPIO[9], GPIO[10], GPIO[11], GPIO[12]). These GPIOs are programmed to be ANT_SEL0, ANT_SEL1, ANT_SEL2, ANT_SEL3 respectively.
Table 3.5.1 Antenna Switch Module Control logic
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3. TECHNICAL BRIEF
3.5.2 UMTS Dupexer(FL102 : ACMD-7602)
A UMTS duplexer splits a single operating band into receive and transmit paths. Important performance requirements include;
Insertion loss, this component is also in the receive and transmit paths ; In the KB770 typical losses : UMTS2100_ Tx = 1.6 dB, UMTS2100_ Rx = 2.0 dB
Out-of-band rejection or attenuation, the duplexer provides input selectivity for the receiver, output filtering for the transmitter, and isolation between the two. Rejection levels for both paths are specified over a number of frequency ranges. Two Tx-to-Rx isolation levels are critical to receiver performance:
Rx-band isolation, the transmitter is specified for out-of-band noise falling into the Rx band. This noise leaks from the transmit path into the receive path, and must be limited to avoid degrading receiver sensitivity. The required Rx-band isolation depends on the PA out of-band noise levels and Rx-band losses between the PA and LNA. Minimum duplexer Rx band isolation value is about 46.7 dB.
Tx-band isolation, the transmit channel power also leaks into the receiver. In this case, the leakage is outside the receiver passband but at a relatively high level. It combines with Rx band jammers to create cross-modulation products that fall in-band to desensitize the receiver. The required Tx-band isolation depends on the PA channel power and Tx-band losses between the PA and LNA. Minimum duplexer Tx­band isolation value is about 51.7dB.
Passband ripple, the loss of this fairly narrowband device is not flat across its passband. Passband ripple increases the receive or transmit insertion loss at specific frequencies, creating performance variations across the band.s channels, and should be controlled.
Return loss, minimize mismatch losses with typical return losses of 10 dB or more (VSWR <2:1).
Power handling, high power levels in the transmit path must be accommodated without degraded performance. The specified level depends on the operating band class and mobile station class (per the applicable standard), as well as circuit losses and antenna EIRP. Several duplexer characteristics depend upon its source and load impedances. QUALCOMM strongly recommends an isolator be used between the UMTS PA and duplexer to assure proper performance.
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3. TECHNICAL BRIEF
T
3.5.3 UMTS PAM(U102 : AWT6279R)
The UMTS PA output power is monitored by power detector circuits (U101 : RTR6275) .
This detector voltage can be used for transmitter calibration and monitor to meet RF system specification.
WCDMA_2100
4 3
ACMD-7602
PGND RX ANT
C148
FL102
1 2
TX
C146
R122
3.3p
C151
2.7nH
IN
OUT
COU
TER
32
51R124
RX_WCDMA_2100
C155 DNI
HDET
L120
0
C156
1.2p
6.8nH
C153 15p
LDC151G9520Q-359
U103
1
4
C147
1u
100p
VEN
GND1
5
6
VMODE1
GND2
4
7
RFOUT
VMODE2
3
8
RFIN
GND3
2
9
VBATT
VCC
110
PGND
11
U102AWT6279R
+VPWR
C143
10u
FL103
EFCH1950TDF1
5
4
G3
O1
1
IN
C154
100p
PA_ON
C159
100p
G2
2G13
L122 NA
PA_R1
C158 100p
L121
2.2nH
R123
0
C157 DNI
WCDMA_2100_TX_OU
Figure 3.5.3 UMTS PAM, Duplexer, Coupler
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3. TECHNICAL BRIEF
3.5.4 VCTCXO(X100 : TG-5010LH_19_2M_75A)
The Voltage Controlled Temperature Compensated Crystal Oscillator (VCTCXO) provides the reference frequency for all RFIC synthesizers as well as clock generation functions within the MSM6280 IC. The oscillator frequency is controlled by the MSM6280 IC.s TRK_LO_ADJ pulse density modulated signal in the same manner as the transmit gain control TX_AGC_ADJ. A two-pole RC lowpass filter is recommended on this control line.
The PM6650 IC controls the handset power-up sequence, including a special VCTCXO warm-up interval before other circuits are turned on. This warm-up interval (as well as other TCXO controller functions) is enabled by the MSM TCXO_EN line . The PM6650 IC VREG_TCXO regulated output voltage is used to power the VCTCXO and is enabled before most other regulated outputs. Any GSM mode power control circuits within the MSM6280 IC require a reference voltage for proper operation and sufficient accuracy. Connecting the PM6650 IC REF_OUT directly to the MSM6275 IC GSM_PA_PWR_CTL_REF provides this reference. This sensitive analog signal needs a 0.1 μF low frequency filter near to MSM side, and isolate from digital logic and clock traces with ground on both sides, plus ground above and below if routed on internal layers
3.5.5 PMIC Functional Block Diagram(U503 : PM6650-3P)
Input power management
- Valid external supply attachment and removal detection
- Supports unregulated (closed-loop) external charger supplies and USB supplies as input power sources
- Supports lithium-ion main batteries
- Trickle, constant current, constant voltage, and pulsed charging of the main battery
- Supports coin cell backup battery (including charging)
- Battery voltage detectors with programmable thresholds
- VDD collapse protection
- Charger current regulation and real-time monitoring for over-current protection
- Charger transistor protection by power limit control
- Control drivers for two external pass transistors and one external battery MOSFET—MOSFET is optional
- Voltage, current, and power control loops
-Automated recovery from sudden momentary power loss
Output voltage regulation
- One boost (step-up) switched-mode power supply (SMPS) for driving white LEDs and hosting USBOTG
- Three buck (step-down) switched-mode power supplies that efficiently generate MSMC, MSME, and PA (or second MSMC) supply voltages
- Supports dynamic voltage scaling (DVS) for MSMC and PA
- Eleven low dropout regulator circuits with programmable output voltages, implemented using three different current ratings: 300 mA (two), 150 mA (six), and 50 mA (three). These can be used to power MSMA, MSMP, RFRX1, RFRX2, RFTX, SYNT, TCXO, WLAN, MMC, USB, and RUIM circuits.
- All regulators can be individually enabled/disabled for power savings
- Low power mode available on MSMA and MSMP regulators
- All regulated outputs are derived from a common bandgap reference—close tracking
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3. TECHNICAL BRIEF
- Integrated handset-level housekeeping functions reduces external parts count, size, cost
- Analog multiplexer selects from 8 internal and up to 18 external inputs
- Multiplexer output’s offset and gain are adjusted, increasing the effective ADC resolution
- Adjusted multiplexer output is buffered and routed to an MSM device ADC
- Dual oscillators – 32.768 kHz off-chip crystal and on-chip RC assures MSM device sleep clock
- Crystal oscillator detector and automated switch-over upon lost oscillation
- Real time clock for tracking time and generating associated alarms
- On-chip adjustments minimize crystal oscillator frequency errors
- Circuits control TCXO warm-up and synchronize, deglitch, and buffer the TCXO signal
- TCXO buffer control for optimal QPH/catnap timing
-Three-stage over-temperature protection (smart thermal control)
Integrated handset-level user interfaces
- Four programmable current sinks recommended as keypad backlight, LCD backlight, camera flash, and
general-purpose drivers
- Vibration motor driver programmable from 1.2 to 3.1V in 100 mV increments
-Speaker driver with programmable gain, turn-on time, and muting; differential operation (drives external 8 speakers with volume controlled 500 mW)
IC-level interfaces
- MSM device-compatible 3-line SBI for efficient initialization, status, and control
- Supports the MSM device’s interrupt processing with an internal interrupt manager
- Many functions monitored and reported through real-time and interrupt status signals
- Dedicated circuits for controlled power-on sequencing, including the MSM device’s reset signal
- Several events continuously monitored for triggering power-on/power-off sequences
- Supports and orchestrates soft resets
- USB-OTG transceiver for full-speed (12 Mb/s) and low speed (1.5 Mb/s) interfacing of the MSM
device to computers as a USB peripheral, or connecting the MSM device to other peripherals
-RUIM level translators enable MSM device interfacing with external modules
Twelve multi-purpose pins that can be configured as digital or analog I/Os, bi-directional I/Os, or current
sinks. Default functions support the RUIM level translators, power-on circuits, analog multiplexer inputs,
an LED driver, and a reference voltage buffer.
Highly integrated functionality in a small package – 84-pin BCCS with a large center slug for electrical
ground, mechanical stability, and thermal relief
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Figure 3.5.5.1 PM6650 Interface with MSM
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