LG IPS277 Datasheet QM3004D
General Description
The QM3004D is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3004D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM Pulsed Drain Current2 110 A
EAS Single Pulse Avalanche Energy3 130 mJ
IAS Avalanche Current 34 A
PD@TC=25℃
PD@TA=25℃
T
Storage Temperature Range -55 to 175
STG
TJ Operating Junction Temperature Range -55 to 175
Continuous Drain Current, VGS @ 10V1 55 A
Continuous Drain Current, VGS @ 10V1 40 A
Continuous Drain Current, VGS @ 10V1 13.6 A
Continuous Drain Current, VGS @ 10V1 11.4 A
Gate-Source Voltage
Total Power Dissipation4 41 W
Total Power Dissipation4 2.42 W
Thermal Data
Symbol Parameter Typ. Max. Unit
R
Thermal Resistance Junction-ambient (Steady State)1 --- 62
θJA
R
Thermal Resistance Junction-Case1 --- 3.6
θJC
QM3004D
N-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS RDSON ID
30V 8.5mΩ 55A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO252 Pin Configuration
D
S
G
±20
V
℃
℃
℃/W
℃/W
1
Rev A.02 D051311
QM3004D
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
DSS
△BV
/△TJ
BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
V
Temperature Coefficient --- -5.8 ---
GS(th)
Drain-Source Leakage Current
Gate-Source Leakage Current
R
V
△V
DSS
DS(ON)
GS(th)
GS(th)
I
DSS
I
GSS
Reference to 25℃ , ID=1mA
VGS=10V , ID=30A --- 7.5 8.5
VGS=4.5V , ID=15A --- 11 14
VGS=VDS , ID =250uA
=24V , VGS=0V , TJ=25℃
V
DS
VDS=24V , VGS=0V , TJ=55℃
V
=±20V , VDS=0V
GS
--- 0.027 ---
V/℃
mΩ
1.0 1.5 2.5 V
mV/℃
--- --- 1
uA
--- --- 5
--- ---
±100
nA
gfs Forward Transconductance VDS=5V , ID=30A --- 38 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 3.5
Qg Total Gate Charge (4.5V)
=15V , VGS=4.5V , ID=15A
Qgs Gate-Source Charge --- 4.2 5.9
V
DS
--- 12.6 17.6
Ω
nC
Qgd Gate-Drain Charge --- 5.1 7.1
T
Turn-On Delay Time
d(on)
=15V , VGS=10V , RG=3.3Ω
Tr Rise Time --- 12.2 22
T
Turn-Off Delay Time --- 26.6 53
d(off)
V
DD
I
=15A
D
--- 4.6 9.2
ns
Tf Fall Time --- 8 16
C
Input Capacitance
iss
=15V , VGS=0V , f=1MHz
C
Output Capacitance --- 163 228
oss
C
Reverse Transfer Capacitance --- 131 183
rss
V
DS
--- 1317 1843
pF
Guaranteed Avalanche Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
EAS Single Pulse Avalanche Energy5
V
=25V , L=0.1mH , IAS=20A
DD
45 --- --- mJ
Diode Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current
ISM Pulsed Source Current
VSD Diode Forward Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge --- 2 --- nC
Note :
1.The data tested by surface mounted on a 1 inch
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
and IDM , in real applications , should be limited by total power dissipation.
D
2
1,6
2,6
--- --- 110 A
VG=VD=0V , Force Current
=0V , IS=1A , TJ=25℃
V
GS
--- --- 55 A
--- --- 1.2 V
--- 9.2 --- nS
F=30A , dI/dt=100A/µs , T
I
2
FR-4 board with 2OZ copper.
=25V,VGS=10V,L=0.1mH,IAS=34A
DD
=25℃
J
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