LG IPS277 Datasheet AOD478
AOD478/AOI478
V
Symbol
V
V
Absolute Maximum Ratings T
=25°C unless otherwise noted
Drain-Source Voltage
100
Top View
Bottom View
G
S
D
G
S
D
G
G
D
D
S
S
Top View
V
DS
A
V
Drain-Source Voltage
100
A D
100V N-Channel MOSFET
General Description Product Summary
The AOD478/AOI478 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R
. This device is ideal for
DS(ON)
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
DS
ID (at VGS=10V) 11A
R
R
(at VGS=10V) < 140mΩ
DS(ON)
(at VGS = 4.5V) < 152mΩ
DS(ON)
100V
backlighting.
100% UIS Tested
100% Rg Tested
TO252
DPAK
A
TO251A
IPAK
Bottom View
G
Maximum UnitsParameter
V
GS
C
C
B
A
TC=25°C
TC=100°C
TA=25°C
TA=70°C
C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
I
D
I
DM
I
DSM
IAS, I
EAS, E
P
D
P
DSM
TJ, T
AR
AR
STG
Continuous Drain
Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range -55 to 175 °C
11
24Pulsed Drain Current
2.5
45
23
2.1
1.3
8
2
5
mJ
D
S
V±20Gate-Source Voltage
A
A
A10
W
W
Thermal Characteristics
Parameter Typ Max Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
17
55
2.7
25
60
3.3
°C/W
°C/W
°C/W
www.aosmd.com Page 1 of 6
G
tr3
ns
Turn-On Rise Time
VGS=10V, V
=50V, R
=
8.6Ω,
Electrical Characteristics (TJ=25°C unless otherwise noted)
AOD478/AOI478
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
100 V
VDS=100V, VGS=0V 1
TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V
GS ID
=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.5A
1.7 2.2 2.8 V
24 A
116 140
100 nA
TJ=125°C 225 270
VGS=4.5V, ID=3A
VDS=5V, ID=4.5A
IS=1A,VGS=0V
121 152 mΩ
17 S
0.76 1 V
µA
mΩ
12 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
350 445 540 pF
18 29 35 pF
9 16 23 pF
1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) 8 10.3 13 nC
Qg(4.5V) 4 5.1 6.5 nC
Q
gs
Q
gd
t
D(on)
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
is based on R
DSM
is the sum of the thermal impedance from junction to case R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
θJA
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
J(MAX)
VGS=10V, VDS=50V, ID=4.5A
1.6 nC
2.4 nC
8 ns
DS
R
=3Ω
GEN
L
17 ns
4.5 ns
IF=4.5A, dI/dt=500A/µs
IF=4.5A, dI/dt=500A/µs
=175°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and case to ambient.
θJC
14.5
68
21 27.5 ns
97 126
nC
Rev 1: Nov. 2011 www.aosmd.com Page 2 of 6
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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