LG IPS277 Datasheet AOD452
AOD452
A
T
T
T
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD452 uses advanced trench technology and
design to provide excellent R
with low gate
DS(ON)
Features
VDS (V) =25V
I
= 55 A (VGS = 10V)
D
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product
OD452 is Pb-free (meets ROHS &
Sony 259 specifications). AOD452L is a Green
< 8.5 mΩ (VGS = 10V)
R
DS(ON)
< 14 mΩ (VGS = 4.5V)
R
DS(ON)
Product ordering option. AOD452 and AOD452L are
electrically identical.
O-252
D-PAK
op View
Drain Connected to
ab
G D S
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
Symbol
Drain-Source Voltage 25
T
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
=25°C
C
=100°C
T
C
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
=100°C
T
C
TA=25°C
Power Dissipation
A
=70°C 2.1
T
A
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
C
AR
E
AR
P
D
P
DSM
TJ, T
STG
G
Maximum UnitsParameter
55
55
100
30
135
50
25
-55 to 175
D
S
V
V±20Gate-Source Voltage
A
A
mJ
W
3
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJC
14.2 20
39 50
2.5 3
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOD452, AOD452L
Ω
A
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250uA, VGS=0V
=20V, VGS=0V
V
DS
V
=0V, VGS=±20V
DS
DS=VGS, ID
=10V, VDS=5V
V
GS
V
=10V, ID=30A
GS
=4.5V, ID=20A
V
GS
=5V, ID=10A
V
DS
I
=1A, VGS=0V
S
=250µA
=55°C
T
J
=125°C
T
J
25 V
1
5
µA
100 nA
1 1.8 3 V
100 A
6.5 8.5
9.7 12
11.5 14
mΩ
m
35 S
0.72 1 V
55 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=12.5V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
1230 1476 pF
315 pF
190 pF
1.2 2 Ω
SWITCHING PARAMETERS
(10V)
Q
g
(4.5V)
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
: The value of R
Power dissipation P
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
curve provides a single pulse rating.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is based on R
DSM
is based on T
D
is the sum of the thermal impedence from junction to case R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
θJA
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=175°C.
J(MAX)
V
=10V, VDS=12.5V, ID=20A
GS
V
=10V, VDS=12.5V, RL=0.6Ω,
GS
R
=3Ω
GEN
I
=20A, dI/dt=100A/µs
F
=20A, dI/dt=100A/µs
I
F
=175°C.
J(MAX)
and case to ambient.
θJC
26.4 32 nC
13.5 nC
3.9 nC
7.75 nC
6.5 ns
10 ns
22.7 ns
6.2 ns
23.06
27.5 ns
15.25 nC
=25°C. The
A
=25°C. The SOA
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005
Alpha & Omega Semiconductor, Ltd.
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