• Charger circuitry for NiCd, NiMh and LiIon cells
• Integrated regulators for direct connection to battery.
14
3.1.3 GSM System Description
The E-GOLDvoice is suited for mobile stations operating in the GSM850/900/1800/1900 bands.
In the receiver path the antenna input signal is converted to the baseband, filtered, and then
amplified to target level by the RF transceiver chip set. Two A-to-D converters generate two 6.5
Mbit/s data streams. The decimation and narrowband channel filtering is done by a digital
baseband filter in each path. The DSP performs:
1. The GMSK equalization of the received baseband signal (SAIC support available)
2. Viterbi channel decoding supported by an hardware accelerator.
The recovered digital speech data is fed into the speech decoder. The E-GOLDvoice supports
fullrate, halfrate, enhanced fullrate and adaptive multirate speech CODEC algorithms.
The generated voice signal passes through a digital voiceband filter. The resulting 4 Mbit/s data
stream is D-to-A converted by a multi-bit-oversampling converter, postfiltered, and then amplified
by a programmable gain stage.
The output buffer can drive a handset ear-piece or an external audio amplifier, an additional
output driver for external loud speaker is implemented.
In the transmit direction the differential microphone signal is fed into a programmable gain
amplifier. The prefiltered and A-to-D converted voice signal forms a 2 Mbit/s data stream. The
oversampled voice signal passes a digital decimation filter.
The E-GOLDvoice performs speech and channel encoding (including voice activity detection
(VAD) and discontinuous transmission (DTX)) and digital GMSK modulation.
In the RF transceiver part, the baseband signal modulates the RF carrier at the desired frequency
in the 850 MHz, 900 MHz, 1.8 GHz, and 1.9 GHz bands using an I/Q modulator. The
E-GOLDvoice supports dual band applications.
Finally, an RF power module amplifies the RF transmit signal at the required power level. Using
software, the E-GOLDvoice controls the gain of the power amplifier by predefined ramping curves
(16 words, 11 bits).
For baseband operation, the E-GOLDvoice supports:
• Making or receiving a voice call
• Sending or receiving an SMS.
3.1.4 PMU Details
The E-GOLDvoice includes battery charger support (various sensor connections for temperature,
battery technology, voltage, etc.) and a ringer buffer.
E-GOLDvoice avoids the need for an external power management component because its
internal power management unit contains:
• Voltage regulators for the On-chip and Off-chip functional blocks
• Charger circuitry for NiCd, NiMh and LiIon cells.
3.1.5 Bus Concept
15
The E-GOLDvoice has two cores (a microcontroller and a DSP), each with its own bus.
There is an interconnection between the TEAKlite bus and the C166S X-Bus.
3.1.6 C166S Buses
The C166S is connected to three buses:
1. Local Memory (LM) bus
2. X-Bus
3. PD-Bus.
3.1.7 TEAKLite Bus
The TEAKlite is connected to the TEAKlite bus.
3.1.8 Bus Interconnections
The interconnection between the X-Bus and the TEAKlite Bus uses:
• Multicore Synchronization
• Shared Memory.
3.1.9 Clock Concept
The E-GOLDvoice has a flexible clock control.
3.1.10 Interrupt Concept
The C166 MCU carries out the E-GOLDvoice interrupt system.
3.1.11 Debug Concept
The E-GOLDvoice includes a multi-core debug. The C166 and TEAKlite cores can be debugged
in parallel with:
• A single JTAG port (that is, on a single host)
• Mutual breakpoint control.
3.1.12 C166 Debug Concept
The debugging of the C166 uses the OCDS and the Cerberus.
3.1.13 TEAKLite Debug Concept
TEAKlite debugging uses the OCEM and the SEIB.
3.1.14 Power Management
The E-GOLDvoice provides the power management unit (PMU) for the complete mobile phone
application. The integrated PMU is directly connected to the battery and provides a set of linear
voltage regulators (LDO’s). These LDO’s generate all required supply voltages and currents
needed in a low feature mobile phone.
A charger control circuit charges NiCd, NiMH and LiIon batteries. The charger control supports
hardware controlled pre-charging and software controlled charging. It offers a wide charger
voltage range, making halfwave/ full-wave charging with cheap transformers possible.
White/blue backlight generation is supported with a special driver for very a low external parts
count.
Power consumption during operation phases is minimized due to flexible clock switching
In the Standby Mode most parts of the device are switched off, only a small part is running at
32kHz and the controller RAM is switched to a power saving mode. The TEAKLite ROM can be
16
switched off during Standby via SW.
3.1.15 On-Chip Security Concept
Secure boot is based on a public/private key approach. Flash images that are not signed with the
private key during phone manufacture cannot be loaded. Verification of the Flash code is done
with the public key. The public key as well as hash and verify algorithms are stored in the ROM,
which ensures a hardware secured boot procedure.
The following security features are supported:
• Prevention of illegal Flash programming
• Flash programming makes use of the E-GOLDvoice ID for personalization checks with IMEI and
SIM-lock protection
The security features use the following mechanism:
• Boot ROM flow:
– Controls the boot transition to external flash
– Controls the flash update
• Flash tied to the individual chip via an ID using e-fuses, that is, each E-GOLDvoice chip has its
own fused ID.
Further details on the E-GOLDvoice security concept are not publicly documented.
3.1.16 Asynchronous Operation Mode Concept
The E-GOLDvoice can operate in either:
• The traditional synchronous mode with the 26 MHz system clock synchronized on the base
station
• A special asynchronous mode (XO concept).
In the asynchronous mode the 26 MHz clock input is not synchronized with the base station; the
residual frequency offset is compensated in the digital signal processing domain. This processing
includes frequency and timing compensation of the baseband and voiceband signals.
17
Power Amplifier Module(SKY77517/ SKY77518)
3.2.1 GB100/GB100b/GB105/GB105b (SKY77518)
Figure.3-2-1 SKY77518 FUNCTIONAL BLOCK DIAGRAM
The SKY77518-21 is a transmit and receive front-end module (FEM) with Integrated Power Amplifier Control
(iPAC) for dual-band cellular handsets comprising GSM900 and DCS1800 operation. Designed in a low
profile, compact form factor, the SKY77518-21 offers a complete Transmit VCO-to- Antenna and
Antenna-to-Receive SAW filter solution. The FEM also supports Class 12 General Packet Radio Service (GPRS)
multi-slot operation.
The module consists of a GSM900 PA block and a DCS1800 PA block, impedance-matching circuitry for 50
Ω input and output impedances, TX harmonics filtering, high linearity and low insertion loss PHEMT RF
switches, diplexer and a Power Amplifier Control (PAC) block with internal current sense resistor. A custom
BiCMOS integrated circuit provides the internal PAC function and decoder circuitry to control the RF switches.
The two Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated onto a single Gallium Arsenide
(GaAs) die. One PA block supports the GSM900 band and the other PA block supports the DCS1800 band. Both
PA blocks share common power supply pads to distribute current. The output of each PA block and the outputs
to the two receive pads are connected to the antenna pad through PHEMT RF switches and a diplexer. The
GaAs die, PHEMT die, Silicon (Si) die and passive components are mounted on a multi-layer laminate substrate.
18
The assembly is encapsulated with plastic overmold. Band selection and control of transmit and receive modes
are performed using two external control pads. Refer to the functional block diagram in Figure.3-2-1below. The
band select pad (BS) selects between GSM and DCS modes of operation. The transmit enable (TX_EN) pad
controls receive or transmit mode of the respective RF switch (TX = logic 1). Proper timing between transmit
enable (TX_EN) and Analog Power Control (VRAMP) allows for high isolation between the antenna and
TXVCO while the VCO is being tuned prior to the transmit burst.
The SKY77518-21 is compatible with logic levels from 1.2 V to VCC for BS and TX_EN pads, depending on
the level applied to the VLOGIC pad. This feature provides additional flexibility for the designer in the selection
of FEM interface control logic.
3.2.2 GB100a/GB105a (SKY77517)
Figure.3-2-2 SKY77518 FUNCTIONAL BLOCK DIAGRAM
The SKY77517–21 is a transmit and receive front-end module (FEM) with Integrated Power Amplifier Control
(iPAC.) for dual-band cellular handsets comprising GSM850 and PCS1900 operation. Designed in a low profile,
compact form factor, the SKY77517–21 offers a complete Transmit VCO-to-Antenna and Antenna-to-Receive
SAW filter solution. The FEM also supports Class 12 General Packet Radio Service (GPRS) multi-slot
operation.
The module consists of a GSM850 PA block and a PCS1900 PA block, impedance-matching
circuitry for 50 Ω input and output impedances, TX harmonics filtering, high linearity and low insertion loss
PHEMT RF switches, diplexer and a Power Amplifier Control (PAC) block with internal current sense resistor.
19
A custom BiCMOS integrated circuit provides the internal PAC function and decoder circuitry to control the RF
switches. The two Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated onto a single Gallium
Arsenide (GaAs) die. One PA block supports the GSM850 band and the other PA block supports the PCS1900
band. Both PA blocks share common power supply pads to distribute current. The output of each PA block
and the outputs to the two receive pads are connected to the antenna pad through PHEMT RF switches and a
diplexer. The GaAs die, PHEMT die, Silicon (Si) die and passive components are mounted on a multi-layer
laminate substrate. The assembly is encapsulated with plastic overmold.
Band selection and control of transmit and receive modes are performed using two external control pads. Refer
to the functional block diagram in Figure.3-2-2below. The band select pad (BS) selects between GSM and PCS
modes of operation. The transmit enable (TX_EN) pad controls receive or transmit mode of the respective RF
switch (TX = logic 1). Proper timing between transmit enable (TX_EN) and Analog Power Control (VRAMP)
allows for high isolation between the antenna and TX-VCO while the VCO is being tuned prior to the transmit
burst.
The SKY77517 is compatible with logic levels from 1.2 V to VCC for BS and TX_EN pads, depending on the
level applied to the VLOGIC pad. This feature provides additional flexibility for the designer in the selection of
FEM interface control logic.
20
26MHz Clock (DCXO)
Figure.3-3 Crystal Oscillator Functional Overview
The XO_TUNE register holds the digital correction value for the crystal oscillator frequency. The XOMODE
bits of XO_INIT1 register contain setup informations for the crystal oscillator (for example, current
programming, etc.).See Figure .3-3 Crystal Oscillator Functional Overview.
The registers XO_INIT2 and XO_INIT3 contain the coefficients information for the linearization unit of crystal
oscillator (LUXO) This linearization unit computes the required digital control word out of the programmed
AFC bits in order to have a linear pulling curve ppm vs. AFC word. The resulting digital control word DIG is
filtered by a digital lowpass filter, which can be scaled or deactivated using the bits DIGFILT0 and DIGFILT1
of the XO_INIT3 register.
The frequency correction splits into 2 parts:
1. The XOCAL bits in the XO_INIT1 register are used for the coarse frequency adjustment and are set once for
a mobile lifetime (during production test)
2. The XO_TUNE register contains the information for frequency correction when the mobile is used (correction
of temperature drift, crystal aging)
21
RTC(32.768KHz Crystal)
Figure.3-4 E-GoldVoice RTC Interface
22
3.5 LCD Interface(3 wire SPI interface)
Figure.3-5-1 LCD Interface
Figure.3-5-2 Charging PUMP Interface
23
24
3.6 SIM Card Interface
Figure.3-6 SIM CARD Interface
25
3.7 KEYPAD Interface
Figure.3-7 KEY MAXTRIX Interface
26
3.8 Battery Charging Block Interface
Figure.3-8 Charging IC Interface
27
3.9 RF Interface
Figure.3-9 RF Module/SAW Filter Interface
28
29
3.10 Audio Interface
Figure.3-10-1 Audio Interface
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